光子晶体提高GaN基LED出光效率的研究进展

光子晶体作为有效提高LED出光效率的手段之一,在过去的十多年受到了广泛的关注.简述了光子晶体提高LED出光效率的物理原理.从GaN基LED不同光子晶体的结构、晶格常数和高度等参数的影响出发,通过几种新型光子晶体发光二级管的介绍,总结了近年来利用光子晶体提高LED出光效率所取得的研究进展.     

利用常规工艺提高光子晶体GaN LED的出光效率

计算了GaN二维光子晶体的能带结构,并利用常规工艺在国内首次制备出了GaN基二维平板结构的光子晶体蓝光LED。经过器件测试表明,与没有制作光子晶体的器件相比,光子晶体使器件的有效出光效率达到了原来的1.5倍以上。另外,还对感应耦合等离子体刻蚀(ICP)的制备光子晶体LED的刻蚀工艺进行了分析。     

光子晶体提高GaN基LED发光效率实验与工艺研究

采用聚焦离子束制备了500nm和1.5μm周期两种结构,使GaN基LED光效显著提高。比较长、短周期光子晶体提高光效的程度、制备工艺、设备及其相应的成本,宜采用长周期光子晶体结构来提高蓝光GaN基LED的发光效率。采用聚焦离子束和激光干涉两种方法,在GaN基LED导电层(ITO)上制备了长周期光子晶体,利用光纤光谱仪、显微镜和功率计对光提取效率进行了实验测试,结果表明长周期光子晶体LED比无光子晶体LED的光提取效率提高了90%以上。还采用激光干涉直写方法,以扫描的方式在较大面积上制备了光子晶体LED,确认了该方法及工艺批量化、低成本制备光子晶体的可行性。聚焦离子束方法虽然能够产生较精确的光子晶体图形,但由于耗时长、效率低、成本高等问题,仅适于在实验研究中选择和优化光子晶体的结构和参数。     

利用光子晶体提高InP基LED出光效率

应用FDTD方法计算了二维无限大光子晶体的能带结构,并制备出了InP基二维平板结构的光子晶体器件.在制备过程中尝试了仅用PMMA做掩模以及PMMA和SiO2做掩模两种方法.结果表明,不使用SiO2做掩模的情况下,由于PMMA胶选择性较差,在刻蚀过程中难以保证图形的准确转移.而增加SiO2掩模后,获得了图形质量良好的光子晶体结构.成功实现了利用光子晶体结构增强LED的出光效率,与未制作光子晶体结构的LED相比,光子晶体结构LED的出光效率可在原来基础上提高1倍以上.并且随着晶格常数的增加,出光效率进一步提高.     

利用光子晶体提高InP基LED出光效率

应用FDTD方法计算了二维无限大光子晶体的能带结构,并制备出了InP基二维平板结构的光子晶体器件.在制备过程中尝试了仅用PMMA做掩模以及PMMA和SiO2做掩模两种方法.结果表明,不使用SiO2做掩模的情况下,由于PMMA胶选择性较差,在刻蚀过程中难以保证图形的准确转移.而增加SiO2掩模后,获得了图形质量良好的光子晶体结构.成功实现了利用光子晶体结构增强LED的出光效率,与未制作光子晶体结构的LED相比,光子晶体结构LED的出光效率可在原来基础上提高1倍以上.并且随着晶格常数的增加,出光效率进一步提高.     

二维光子晶体LED专利技术分析

LED是一种能够将电能转化为可见光的固态的半导体器件,目前LED已在科研和生产领域取得了广泛的应用。光子晶体是由周期性排列的不同折射率的介质制造的规则光学结构,其中二维光子晶体能使更多方向上的平面光衍射出LED表面,因此目前主要用二维光子晶体来提高LED的出光效率。本文总结了与二维光子晶体LED相关的国内和国外专利的申请趋势、主要申请人分布以及重点技术的发展路线进行了梳理。     

GaN基光子晶体发光二极管的优化设计

构建了基于空气孔型Ga N平板光子晶体(PC)的层状发光二极管(LED)模型。基于平面波展开方法,得到了空气孔型平板光子晶体的能带结构,分析了空气孔半径对禁带宽度的影响,得出最大禁带宽度约为21.5%。设置电偶极子位于Ga N介质层的中心,并在x-y平面内极化,辐射源采用高斯形脉冲,波长取为450 nm,采用三维的时域有限差分法计算LED的出光效率,讨论了平板光子晶体的厚度和空气孔的半径对层状LED的相对出光效率的影响,结果表明:存在最优结构参数值获得最高的相对出光效率,其值约为2。     

光子晶体GaN LED与量子点的共振能量转移

正设计并研制了光子晶体结构GaN LED,实现了光子晶体GaN LED提取效率的提高及其到胶体量子点的共振能量转移,能量转移效率达到79.50%。设计了光子晶体GaN LED器件结构,利用光刻、感应耦合等离子体刻蚀等工艺研制了光子晶体GaN LED器件,制作的光子晶体区域边缘光滑,满足实验的要求。采用积分球收集LED发光来测试LED的P-I-V曲线,测试了在p-GaN上刻蚀光子晶体的LED在不同电流下输出功率与晶格常数、占空比的关系。研究发现:50 mA驱动电流下,晶格常数为14μm、半径与晶格常数比为0.25的光子晶体GaN LED输出功率比无光子晶体GaN LED提高21%以上。该研究对实现高效率胶体量子点电注入发光器件具有借鉴价值。     

LED光取出技术研究进展

大功率白光LED目前存在着光取出效率不高的问题。介绍了提高白光LED光取出效率的主要方法与途径,包括光子晶体,表面粗化,倒装芯片,二次光学设计以及荧光粉远离。这些技术不同程度提高了LED的光取出效率,是解决其发光效率不高的有效途径。     

蓝色LED发光效率提高50%

松下电器产业日前开发成功了发光效率达原来1.5倍的GaN蓝色发光二极管(LED)芯片。该产品是通过在蓝色LED芯片表面大量设置直径约1μm、高约0.5μm的圆柱状凹凸而实现的。芯片内部产生的蓝色光,可将30%左右的光线照射到芯片外部。今后通过改进蓝色LED芯片,预计将能够照射出60%左右的光。此次开发的蓝色LED芯片,利用光子晶体的特性,提高了发光效率。光子晶体是指其内部具有周期性折射率分布的晶体,配置2种折射率差异较大的介质。照射到光子晶体中的光线会因其周期性折射率分布而使光线发生衍射。由于这种效应,从芯片内部照射到芯片外部…     

Extraction efficiency enhancement of LEDs using 2-D photonic crystal

Using photonic crystals (PCs), the extraction efficiency of the light-emitting diodes (LEDs) can be greatly enhanced by the effects of photonic band gap (PBG) and grating diffraction. The two theoretical methods are also discussed. Meanwhile, we demonstrate that LEDs can achieve high extraction efficiency by employing photonic crystal as diffraction grating. PCs with square lattice of cylindrical unit cells are fabricated in GaN layer of GaN-based blue LED. We present a theoretical discussion on the extraction efficiency of PC-LED, which relies on the effective medium theory and transmission matrix method to investigate the effect of lattice constant. The results show that the extraction efficiency of the high performance LEDs can achieve 61.8% when the lattice constant is 270 nm.     

Enhancing extraction efficiency from GaN-based LED by using an omni-directional reflector and photonic crystal

To enhance the light extraction efficiency of traditional light-emitting diodes（LEDs） by reducing the total internal reflection,an omni-directional reflector（ODR） and photonic crystal are adopted in the paper.The structures of photonic crystal and the ODR are designed by diffraction theory and finite difference time domain（FDTD） method.The photonic crystal is employed in the p-GaN layer and the ODR composed of TiO2/SiO2 is designed between the active region and substrate.The simulation results indicate that the light extraction of LEDs can be enhanced by 11.6 times,and the external quantum efficiency of LEDs will be effectively improved.     

光子晶体结构优化对提高LED光提取效率研究

为了提高GaAsInP发光二极管的发光提取效率,在本文中,将其电流扩展层上生长光子晶体刻蚀深度作为损失的重要因素,并作为一个测试案例,分析波导在板中蚀刻的三个不同的气孔形状作为损失的关键因素,并且计算这些损耗以便在这种结构中达到更高的效率。并通过利用PhC板中的有效折射率建模和研究它们的传输来证明PhC在LED表征中的能力。最后,结果表明,仿真结果与实验数据吻合良好,有限元建模中的大量传输表明,它可以提高超过10%的光提取效率,提高了LED的效率。     

Investigation of GaN-based light-emitting diodes using double photonic crystal patterns

GaN-based LEDs with photonic crystal (PhC) patterns on an n- and a p-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the light output power of the GaN-based LED with PhC patterns on an n- and a p-GaN layer is enhanced by a factor of 1.30, and the wall-plug efficiency is increased by 24%. In addition, the higher output power of the LED with PhC patterns on the n- and p-GaN layer is due to better crystal quality on n-GaN and higher scattering effect on p-GaN surface using PhC pattern structure.     

提高LED外量子效率

提高发光二极管的发光效率是当前的一个研究热点.简要介绍了从芯片技术角度提高发光二极管(IED)外量子效率的几种途径,生长分布布拉格反射层结构、制作透明衬底、衬底剥离技术、倒装芯片技术、表面粗化技术、异形芯片技术、采用光子晶体结构等.此外还介绍了发光材料、能带结构以及工艺对外量子效率的影响.     

双周期渐变光子晶体结构及其纳米聚焦效应

利用3+3光束双锥干涉法设计了双周期渐变光子晶体结构阵列,并研究了它的纳米聚焦效应。通过调整内锥角和内外锥的增量角来改变光子晶体晶格的小周期及光子阵列的大周期,通过调整光束强度、偏振方向来实现渐变光子晶体晶格结构、形状等参数的改变。采用傅里叶变换的方法研究了光子晶体结构对光场的纳米聚焦效应。该结构对于提高发光二极管的提取效率、光显示、光耦合及光集成具有非常重要的意义。     

Analysis of Improved Efficiency of InGaN Light‐Emitting Diode With Bottom Photonic Crystal Fabricated by Anodized Aluminum Oxidxe

The improved performance of a bottom photonic crystal (PC) light‐emitting diode (LED) is analyzed based on internal quantum efficiency (η_int) and light‐extraction efficiency (η_ex). The bottom PC is fabricated by anodized aluminum oxide nanopatterns and InGaN quantum wells (QWs) are grown over it. Transmission electron microscopy images reveal that threading dislocations are blocked at the nanometer‐sized air holes, resulting in improved optical emission efficiency of the QWs. From temperature‐dependent photoluminescence measurements, the enhancement of η_int is estimated to be 12%. Moreover, the enhancement of η_ex is simulated to be 7% by the finite‐difference time‐domain method. The fabricated bottom PC LED shows a 23% higher optical power than a reference, which is close to the summation of enhancements in η_int and η_ex. Therefore, the bottom PC improves LED performance through higher optical quality of QWs as well as increased light extraction.     

Fabrication of Efficient Light-Emitting Diodes With a Self-Assembled Photonic Crystal Array of Polystyrene Nanoparticles

A low-cost method of fabricating large photonic crystal arrays of hexagonal posts without the use of lithography is described, along with an application of enhancing light extraction efficiency in semiconductor light-emitting diodes (LEDs). Polystyrene spheres are deposited onto a wafer surface and then processed to achieve control over photonic crystal lattice properties in a method suitable for fast and repeatable patterning. The spheres serve as an etch mask to extend the photonic crystal formed into the semiconductor surface. This technique is applied to LEDs to increase the top surface light extraction, and 51% wall plug enhancement is demonstrated in deep junction liquid phase epitaxially grown LEDs with absorbing substrates, though is adaptable to any substrate and photonic crystal dimensions.