2008 TOP-10 DC/DC获奖产品

数字控制隔离DC/DC转换器BMR453B MR453系列四分之一砖DC-DC转换器集成了一个数字控制平台,这一方法承诺释放了真正资源以增加功率密度。器件具有96%的效率,提供400W的输入功率,或高达33A及±2%的精度。输入电压范围为36～75V,输入电压在     

产品汇总:DC/DC转换器

针对移动设备的低噪声开关稳压器AAT2120和AAT2158的功率转换效率分别为96%和95%。AAT2120可提供高达500mA的输出电流,而AAT2158可为需要更高水平电能的应用提供高达1.5A的输出电流。两款器件的输入电压范围均为2.7～5.5V,并支持低至0.6V的输出电压。为增强保护性能,这两款降压转换器都提供内部软启动、过温和限流保护电路。这两款新型降压转换器还通过增加100%占空比低压降操作,延长系统的运转时间。     

德州仪器高效率500kHz降压型DC／DC转换器

德州仪器（Texas Instruments）宣布推出一款带集成FET的高效率500kHz降压型DC／DC转换器芯片，该产品可提供3A连续输出电流并支持5.5V～36V输入电压。非同步TPS5430SWIFT转换器据称可实现90％以上的电源效率以及2％的输出电压精度（低至1．23V），可在全温度范围内提供3A的连续电流（峰值为4A），     

轻松选择DC/DC变换器

分布式供电体制(distributed-power architectures,DPA)的盛行,极大地促进了集成DC/DC变换器的发展。本文主要讲述了DC/DC变换器在评测、对比和选型时的需要注意的问题,以协助DPA设计人员在市场上挑选出合适的产品。功率、输入和输出首先要考虑的是输入电压、额定功率以及输出电压的大小和种类。根据额定功率的大小,DC/DC变换器通常可分为超低功率(1W以下)、小功率(1～9W)、中功率(10～150W)和大功率(150W以上)等类别。大多数变换器的输入电压是12V或24V,对于那些要求输入电压可变或者输入电压不标准的场合,可以选用具有宽电源输…     

效率高达96％的降压／升压型DC／DC稳压器解决方案

降压型和升压型DC／DC转换器解决了单向电压转换问题,它们总是调节分别低于或高于输入电源的电压。然而,如果输入电源出现高于、等于或低于输出电压的变化（即双向变化）,如何准确调节电压呢？人们一直在用不同和更加复杂的DC／DC拓扑来解决这个问题。     

LT3506／3506A：降压型DC／DC转换器

APSemi推出一款新型双通道高效率DC／DC同步降压转换器APS1126，该器件每个通道的电流驱动能力均高达600mA，以满足多种便携式设备的应用需求，可广泛应用于手机、智能电话、MP3／MP4、数码相机、数码摄像机以及掌上电脑等。     

双降压式DC/DC转换器LM2717-ADJ

LM2717-ADJ是国半公司最近推出的新产品,是一种由两个PWM降压式转换器组成的双输出、电压可调的IC。该器件主要特点：第1路降压式转换器的内部开关管的开关电流可达2．2A（RDS（ON）=0．16Ω）;第2路降压式转换器的内部开关管的开关电流可达3．2A（RDS（ON）=0．16Ω）;输入电压范围4～20V;输出电压可由两外设电阻设定,最低电压为1．267V;开关频率可设定在300～600kHz范围内;内部有输入欠压保护及过热保护;24引脚TSSOP封装;工作温度范围-40℃～＋125℃。     

双输出同步降压型DC/DC控制器

凌力尔特公司(Linear Technology Corporation)推出双输出高效率同步降压型DC/DC控制器LTC3880/-1,该器件具有基于I2C的PMBus接口以用于数字电源系统管理。LTC3880/-1兼有最佳模拟开关稳压器性能和精准混合信号数据转换,可极其方便地实现电源系统的设计和管理,该器件得到了具有易用型图形用户界面(GUI)的LTpowerPlayTM软件开发系统的支持。     

TOP-10 DC/DC

自2005年开始,《今日电子》杂志开始评选TOP-10DC／DC奖。每年,评审组专家从当年的候选产品中,根据“在技术或应用方面取得显著进步,具有开创性的设计,性价比显著提高”三个方面对产品分别打分,最后选出获奖产品。     

分布式基站架构实现更高覆盖能力

凌特公司（Linear Technology）最近推出该公司新型高密度μModule（微型模块）DC／DC转换器--LTM4600。该器件采用微小（15mm×15mm）占板面积、扁平（2．8mm厚度）焊盘网格阵列（LGA）封装，并符合RoHS要求的完整10A开关电源，这是一款具有内置电感器的同步开关模式DC／DC降压型稳压器，支持电源组件和补偿电路，从而满足多种应用的电源要求。     

如何使DC/DC转换器无需散热器

本文重点分析标准的半砖2.3”×2.4”DC/DC转换器。一般来说,同类型最好的肖特基二极管转换器能够提供150瓦或30安的输出。但由于使用温度环境变坏,转换器实际能够输出的功率通常要低于这个数字。     

Current-source parallel-resonant DC/DC converter

This paper introduces, analyzes, and experimentally verifies a novel DC/DC converter called the current-source parallel-resonant converter. The converter consists of a large choke inductor, two switches, and a parallel-resonant circuit. Each switch consists of a MOSFET in series with a diode. It has a nonpulsating input current with a very low AC ripple. The MOSFETs are driven with respect to ground and, therefore, have a simple gate-drive circuit. The analysis of the converter is carried out in the frequency domain using Fourier series techniques. Analytical expressions are derived for performance parameters of the converter. A prototype of the converter circuit was designed, built, and tested. The theoretical results were in good agreement with the experimental results     

Benchmark of power packaging for DC/DC and AC/DC converters

This paper presents the first reported final results of a benchmarking project "StatPEP" which investigated the Status of Power Electronic Packaging used in commercial DC/DC and AC/DC switch mode power supplies. The methodology of the project is first described. Some of the salient results of a comprehensive benchmarking of DC/DC converters (rated power of 100 W) and AC/DC converters (rated power up to 576 W) are presented. Examples for figures-of-merit are presented. The results of the investigation are presented in a generic form, which does not identify individual products. A comparison of the performance of the units shows that the measured power density of the AC/DC units is approximately 10% that of the DC/DC while the thermal density based on footprint is 50%. Also the switching frequency of the AC/DC is 50% that of the DC/DC. Some of the reasons for these differences are discussed     

DC drift failure rate estimation on 10 Gb/s x-cut lithium niobate modulators

Application of the previously reported DC drift activation energy Ea=1.4 eV to lifetime estimation on 10 Gb/s x-cut LiNbO/sub 3/ (LN) modulators is demonstrated. Notably, as the drifting bias voltage V(t) is proportional to the initially applied bias voltage V(O), it is proposed to determine the end-of-life criterion by the ratio A(t)=V(t)/V(O), independent of designed initial bias voltage of LN modulators and voltage limit of drivers. For instance, when the EOL is set at A(t)=2 for 65/spl deg/C operation, the DC drift failure rate is calculated to be 300 failures-in-time from 120/spl deg/C accelerated biased aging data on 28 pieces of 10 Gb/s x-cut LN modulators.