Effect of Gd doping on magnetic, electric and dielectric properties of MgGdxFe2−xO4 ferrites processed by solid state reaction technique

MgGd_xFe_2−xO₄ (x = 0.0, 0.05, 0.1 and 0.15) ferrites, with improved dc resistivity, initial permeability, saturation magnetization, and extremely low relative loss factor, have been synthesized by solid state reaction technique. The microstructures, electric, dielectric and magnetic properties have been investigated by means of X-ray diffraction, Keithley 2611 system, impedance analyzer and VSM respectively. The addition of Gadolinium in Mg ferrite has been shown to play a crucial role in enhancing the electric, dielectric and magnetic properties. The dc resistivity is increased by two orders of magnitude as compared to Mg ferrite. Saturation magnetization has been increased by two times and remnant magnetization has been increased by more than three times due to the doping of Gd³⁺ ions in Mg ferrite. The relative loss factor was found to have very low values and is of the order of 10⁻⁴-10⁻⁵ in the frequency range 0.1-30 MHz. The variations of electric, dielectric and magnetic properties of the samples have been studied as a function of frequency and Gd³⁺ ions concentration measured at room temperature. High resistivity and improved magnetic properties can be correlated with better compositional stoichiometry and the replacement of Fe³⁺ ions by Gd³⁺ ions. The mechanisms responsible to these results have been discussed in this paper.     

AC conductivity and dielectric properties of GeSexTl0.3 amorphous thin films

AC conductivity and dielectric properties have been studied for amorphous thin films with different thicknesses of glassy system GeSe_xTl_0.3 with X = 3, 4 that prepared with thermal evaporation technique. The measurements are taken at temperature range (303-403 K) and frequency range (10²-10⁵ Hz).AC conductivity σ_ac(ω) is found to be proportional to ω^s where s < 1. The temperature dependence of the ac conductivity and the parameter s can be discussed with the aim of the correlated barrier-hopping (CBH) model.The dielectric constant ?′and the dielectric loss ?″ showed frequency and temperature dependence. The maximum barrier height W_M calculated from the dielectric measurements according to Giuntini equation are in good agreement with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in the case of chalcogenide glasses.     

Enhanced magnetoelectric properties in Bi0.95Ho0.05FeO3 polycrystalline ceramics

Polycrystalline samples of Ho doped BiFeO₃ were prepared by solid state reaction method and effect of partial substitution of Ho on dielectric, magnetic and ferroelectric properties was studied. High temperature dielectric results show two dielectric anomalies both in ? and tan δ, out of which, anomaly at higher temperature (∼400 °C) could be ascribed to antiferromagnetic Néel temperature which, is a signature of magnetoelectric coupling. The magnetic moment is greatly improved and the maximum magnetization was found to be 0.736 emu/g. Saturated ferroelectric hysteresis loops were observed for Bi_0.95Ho_0.05FeO₃ with remnant polarization (P_r) = 1.59 μC/cm², maximum polarization (P_max) = 2.56 μC/cm² and coercivity (E_c) = 5.45 kV/cm. We have conducted comprehensive magnetoelectric and magnetodielectric properties at room temperature. Magnetic field induced ferroelectric hysteresis loop observed in Bi_0.95Ho_0.05FeO₃ is of prime importance.     

Effect of chromium substitution on structural,electrical and magnetic properties of NiZn ferrites

Ni_0.5Zn_0.5Fe_2−xCr_xO₄ (0≤x≤0.5) ferrites were successfully prepared by conventional solid state reaction method to investigate the effect of chromium substitution on the structural, electrical and magnetic properties. X-ray powder diffraction results demonstrate that all the prepared samples are well crystallized single-phase spinel structures without secondary phase. As chromium concentration increases, the lattice parameter and crystallite size gradually decrease. The magnetic measurement indicates that saturation magnetization is substantially suppressed by Cr³⁺ doping, changing from 73.5 A·m²/kg at x=0 to 46.3 A·m²/kg at x=0.5. While the room-temperature electrical resistivity is more than four orders of magnitude enhanced by Cr³⁺ substitution, reaching up to 1.1×10⁸ Ω·cm at x=0.5. The dielectric constant monotonously decreases with rising frequency for these ferrites, showing a normal dielectric dispersion behavior. The compositional dependence of dielectric constant is inverse with that of electrical resistivity, which originates from the reduced Fe²⁺/Fe³⁺ electric dipole number by doping, indicating inherent correlation between polarization and conduction mechanism in ferrite.     

Dielectric and magnetic behavior of BaCd2−xSrxFe16O27 W-type hexagonal ferrites

We have prepared BaCd_2−xSr_xFe₁₆O₂₇ (x = 0, 0.5, 1, 1.5 and 2.0) W-type hexagonal ferrites by standard ceramic method. In this work, the structural, dielectric and magnetic properties have been studied of the prepared samples. The XRD analysis of the samples reveals single phase behavior sintered at 1400 °C for 6 h. The saturation magnetization (M_s) shows increasing behavior with the increasing concentration of Sr²⁺. While the coercivity (H_c) decreases rapidly up to 409 G for x = 1.5 and then increases for (x > 1.5) due to the preference of Cd²⁺ for tetrahedral sites and the number of spin-down magnetic ions. The real and imaginary parts of the dielectric constant (?′,?″) and dielectric loss tangent (tan δ) are determined in the frequency range 0.1-10⁷ Hz. It is observed that both the real and imaginary parts of the dielectric constant and tan δ decrease with the increasing concentration of Sr²⁺, which is due to the contribution of Cd²⁺ ions in addition to Fe³⁺ and Fe²⁺ ions to interfacial polarization.     

Elaboration and dielectric study of ferroelectric or relaxor ceramics in the ternary system BaTiO3-NaNbO3-BaSnO3

The present work reports the elaboration and physical investigation of new compounds of the following composition Ba_1−xNa_x(Ti_1−ySn_y)_1−xNb_xO₃ (BTSnNxy). The studied ternary system presents some continuous solid solutions between the next 3 phases: the NaNbO₃ antiferroelectric phase that becomes easily ferroelectric at low rate substitutions, the BaTiO₃ ferroelectric phase and the paraelectric stannate phase BaSnO₃. Two different dielectric behaviors can be observed once some substitutions are made either in A or B sites of an ABO₃ perovskite. These substitutions modify the dielectric properties of the material. The introduction of Sn⁴⁺ and Ti⁴⁺ cations in the B site favors, respectively, a decrease of the transition temperature and an increase in the value of the real dielectric permittivity. The transition temperature should be modulated by varying the rate of cationic substitution. Some relaxor materials can be obtained at a temperature around room temperature.     

Impedance spectroscopy properties of polypyrrole doped with boric acid

The electrical conductivity and dielectric properties of polypyrrole doped with boric acid have been investigated. The direct current conductivity (dc) of the polymer increases with increasing temperature. The alternating current (ac) conductivity of the polymer obeys the power law, i.e., σ_ac(ω) = Aω^s. The alternating conductivity of polypyrrole doped with boric acid is controlled by the correlated barrier hopping model. The activation energy for alternating current mechanism decreases with increasing frequency which confirms the hopping conduction to the dominant mechanism as compared with the dc activation energy. The density of localized states N(E_F) for polypyrrole doped with boric acid was in the range of 2.5–9.2 × 10²² cm^?3 for various temperatures. The dielectric relaxation mechanism was explained on the basis of complex dielectric modulus. The imaginary modulus plot at different temperatures shows a dielectric mechanism with non-Debye relaxation. Boric acid can be a good candidate for controlling the electrical conductivity of the conducting polymer.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

Comparison of the Microstructural Characteristics and Electrical Properties of Thermally Sprayed Al2O3 Coatings from Aqueous Suspensions and Feedstock Powders

In this work the microstructural characteristics and electrical insulating properties of thermally sprayed alumina coatings produced by suspension-HVOF (S-HVOF) and conventional HVOF spray processes are presented. The electrical resistance at different relative air humidity (RH) levels (from 6 to 97% RH) and values of dielectric strength were investigated by direct current electrical resistance measurements, electrochemical impedance spectroscopy, and dielectric breakdown tests. Relationships between electrical properties and coating characteristics are discussed. At low humidity levels (up to 40% RH) the electrical resistivities of S-HVOF and HVOF coatings were on the same order of magnitude (10¹¹???·m). At a very high humidity level (97% RH) the electrical resistivity values for the S-HVOF coatings were in the range 10⁷-10¹¹???·m, up to five orders of magnitude higher than those recorded for the HVOF coating (orders of magnitude of 10⁶???·m). The better electrical resistance stability of the suspension-sprayed Al₂O₃ coatings can be explained by their specific microstructure and retention of a higher content of ??-Al₂O₃. The dielectric strength E _d of suspension-sprayed coatings was found to be 19.5-26.8?kV·mm^?1 for coating thicknesses ranging from 60 to 200???m. These values were slightly lower than those obtained for conventional HVOF coatings (up to 32?kV·mm^?1). However, it seemed that the dielectric strength of conventionally sprayed coatings was more sensitive to the coating thickness (when compared with the values of E _d determined for S-HVOF coatings) and varied to a greater extent (up to 10?kV·mm^?1) when the coating thickness varied in the range 100-200???m.     

Dielectric relaxation, conductivity behaviour and magnetic properties of Mg substituted Ni-Li ferrites

The dielectric properties of Mg substituted Ni-Li spinel ferrites synthesized by sol-gel auto combustion process have been studied using impedance measurements in the frequency range from 10 Hz to 10 MHz and in the temperature range from 310 K to 473 K. The effect of frequency, temperature and composition on dielectric constant (?′), dielectric loss (tan δ) and conductivity (σ) has been discussed in terms of hopping of charge carriers between Fe²⁺ and Fe³⁺ ions. The electrical modulus formulism has been employed to study the relaxation dynamics of charge carriers and the results indicate the presence of non-Debye type of relaxation in the present ferrites. Similar values of activation energies for dc conduction (E_dc) and for conductivity relaxation (E_M″) reveal that the mechanisms of electrical conduction and dielectric polarization are same in these ferrites. A single ‘master curve’ for normalized plots of all the modulus isotherms observed for a given composition indicates the temperature independence of dynamical process for charge carriers. The saturation magnetization and coercivity have been calculated from the hysteresis loop measurements and show striking dependence on the composition.     

Effect of a semiconductor filler and aluminum nanoparticles on the surface structures and dielectric properties of PVDF + TlInS<Subscript>2</Subscript>〈Al〉 composite materials

The results of a study of the temperature and frequency dependences of the dielectric permeability and dielectric loss of PVDF + TlInS₂ and PVDF + TlInS₂ + Al composites at frequencies of 10–10⁵ Hz and temperatures of 20–150°C and the effect of 50-nm aluminum nanoparticles on the dielectric properties of PVDF + x vol % TlInS₂ composite materials are described. It is revealed that an increase in the percentage of the TlInS₂ filler in the matrix leads to an increase in the dielectric permeability and dielectric loss of these materials. An increase in the amount of the PVDF + x vol % TlInS₂ + y vol % Al composites is also observed with an increase in the aluminum nanoparticle content in the composite; this effect leads to a change in the Maxwell–Wagner space-charge polarization. Under the effect of aluminum nanoparticles, the pattern of the frequency dispersion of the dielectric loss of the studied composites changes significantly.     

Dielectric properties and point defect behavior of antimony oxide doped Ti deficient barium strontium titanate ceramics

The microstructures and dielectric properties of Sb₂O₃-doped Ti deficient barium strontium titanate ceramics prepared by solid state method were investigated with non-stoichiometric level and Sb₂O₃ content by SEM, XRD and LCR measure system. It is found that with the increase of δ, (Ba_0.75Sr_0.25)Ti_1–δO_3–2δ ceramics transform from single phase solid solutions with typical cubic perovskite structure to multiphase compounds while (Ba_0.75Sr_0.25)Ti_0.998O_2.996 ceramics remain to be single-phase with the increasing Sb₂O₃ content. The distortion of the ABO₃ perovskite lattice caused by V_Ti″″ and V_o^?? induces the drop of Curie temperature and the rise of relative dielectric constant in (Ba_0.75Sr_0.25)Ti_1–δO_3–2δ ceramics with increasing δ value. The orientation of V_o^?? elastic dipoles results in the domain-wall pinning and thus the reduction of the dielectric loss. With increasing Sb₂O₃ content, the relative dielectric constant, dielectric constant maximum and Curie temperature of (Ba_0.75Sr_0.25)Ti_0.998O_2.996 ceramics decrease dramatically while the dielectric loss increases.     

Preparation and characterization of Mg-doped CaCu3Ti4O12 thin films

Mg-doped CaCu_3?xMg_xTi₄O₁₂ (x=0, 0.05, 0.1, 0.15, 0.2, at.%) thin films were prepared by a modified sol?gel method. A comparative study on the microstructure and electrical properties of Mg-doped CaCu₃Ti₄O₁₂ (CCTO) thin films was carried out. The grain sizes of the Mg-doped CCTO thin films were smaller in comparison to the undoped CCTO films. Furthermore, compared to undoped CCTO films, Mg-doped CCTO thin films obtained higher dielectric constant as well as excellent frequency stability. Meanwhile, Mg doping could reduce the dielectric loss of CCTO thin films in the frequency range of 10⁴?10⁶ Hz. The results showed that the Mg-doped CCTO thin films had the better electrical characteristics compared with the undoped CCTO films. The nonlinear coefficient of Mg-doped CCTO thin films at x=0.15 and x=0.1 was improved to 7.4 and 6.0, respectively.     

Low-loss microwave dielectrics using rock salt oxide Li2MgTiO4

Rock-salt-structured Li₂MgTiO₄ ceramic was prepared by the conventional mixed oxide route and its microwave dielectric properties were investigated. The microstructures of the ceramics were characterized by SEM. The dielectric properties of the ceramics exhibited a significant dependence on the sintering condition and crystal structure. A new microwave dielectric material, Li₂MgTiO₄ sintered at 1360 °C has a dielectric constant (?_r) of ∼17.25, a Q × f of ∼97,300 GHz (where f = 9.86 GHz, is the resonant frequency) and a τ_f of ∼-27.2 ppm/°C. The microwave dielectric properties of the ceramic are reported for the first time.     

Microwave and infrared dielectric response of tunable Ba1−xSrxTiO3 ceramics

The dielectric properties, infrared (IR) dielectric response and Raman spectra of tunable microwave (MW) Ba_1?xSr_xTiO₃ (x = 0.4, 0.5, 0.6 and 0.7) ceramics were studied systematically as functions of composition and temperature. It was found that, with increasing the content of Sr from 40% to 70%, the permittivity of the Ba_1?xSr_xTiO₃ ceramics decreased from 7200 to 640 while the dielectric tunability decreased from 50.1% to 5.4% measured at 10 kHz. It is particularly interesting that the MW dielectric loss tangent was significantly decreased from 1.5 × 10^?2 to 7.4 × 10^?4. Complex permittivity spectra obtained by fitting the infrared data were also extrapolated to MW frequency and compared with the dielectric data near 1 GHz. For the samples with x = 0.4 and x = 0.5, the dielectric loss measured at ～1 GHz was much higher than that calculated at 10 GHz, which is presumably due to the Debye-type dielectric relaxation in GHz region. However, the dielectric loss of the samples with x = 0.6 and x = 0.7, extrapolated from IR range, was in agreement with that measured at MW frequency. Low-temperature Raman scattering showed that the band at 760 cm^?1 assigned to the Ti?O₃ torsional mode markedly sharpens and shifts upward with increasing content of Sr. This is an indication that the bonding between cations and anions was tightened due to the substitution of Ba with Sr, which explains well the decrease in dielectric permittivity, loss and tunability with increasing concentration of Sr.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Dielectric relaxation behaviors of pure and Pr6O11-doped CaCu3Ti4O12 ceramics in high temperature range

Pure and Pr₆O₁₁-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were prepared by conventional solid-state reaction method. The compositions and structures were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The influences of Pr-ion concentration on dielectric properties of CCTO were measured in the ranges of 60 Hz-3 MHz and 290-490 K. The third phase of Ca₂CuO₃ was observed from the XRD of CCTO ceramics. From SEM, the grain size was decreased obviously with high valence Pr-ion (mixing valence of Pr³⁺ and Pr⁴⁺) substituting Ca²⁺. The room temperature dielectric constant of Pr-doped CCTO ceramics, sintered at 1323 K, was an order of magnitude lower than the pure CCTO ceramics due to the grain size decreasing and Schottky potential increasing. The dielectric spectra of Pr-doped CCTO were flatter than that of pure CCTO. The loss tangent of Pr-doped CCTO ceramics was less than 0.20 in 2 × 10²-10⁵ Hz region below 440 K. The complex impedance spectra of pure and Pr-doped CCTOs were fitted by ZView. From low to high frequency, three semicircles were observed corresponding to three different conducting regions: electrode interface, grain boundary and grain. By fitting the resistors R and capacitors C, the activation energies of grain boundary and electrode contact were calculated. All doped CCTOs showed higher activation energies of grain boundary and electrode than those of pure CCTO ceramics, which were concordant with the decreasing of dielectric constant after Pr₆O₁₁ doping.     

Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition

A two-step plasma enhanced chemical vapor deposition procedure has been developed to produce high quality Si_xN_yH_z films for quantum cascade laser applications. The procedure consists in exposing the GaAs substrate to a controlled N₂ plasma previous to the silicon nitride film deposition. The pre-treatment causes the formation of a thin GaN film that passivates the GaAs wafer. The method has been optimized varying RF power, N₂ flow rate and process time of the pre-treatments and monitoring their effects on the resulting chemical composition and dielectric properties of the nitride overlayers, by means of infrared spectroscopy, X-ray photoelectron spectroscopy and electric characterizations. A narrow window in the pre-treatment RF power, N₂ flux and time values, improves the composition, structural and dielectric properties of the silicon nitride overlayers. The best result has been found depositing the silicon nitride films on GaAs wafer after 2 min of N₂ plasma treatment with a power of 20 W and a 50 cm³/min flow rate.     

Elucidating the dielectric properties of Mg2SnO4 ceramics at microwave frequency

This study investigated the potential applications of microwave dielectric properties of Mg₂SnO₄ ceramics in mobile communication. Mg₂SnO₄ ceramics were prepared using a conventional solid-state method. The X-ray diffraction patterns of the Mg₂SnO₄ ceramics revealed no significant variation of phase with sintering temperature. A maximum density of 4.62 g/cm³, a dielectric constant (?_r) of 8.41, a quality factor (Q × f) of 55,100 GHz, and a temperature coefficient of resonant frequency (τ_f) of −62 ppm/ °C were obtained when Mg₂SnO₄ ceramics were sintered at 1550 °C for 4 h.