一种新型圆极化可重构天线

本文利用最大功率传输效率法(MMPTE),通过4个相同左旋圆极化贴片单元作为子阵来实现阵列天线圆极化可重构。通过在被设计阵列(作为发射阵列)远场区引入极化控制接收天线,可以将整个收发系统看作一个无线功率传输系统,这样就可以把阵列天线的设计问题转换为一个天线之间的传输效率最优化的问题。通过调节接收天线的极化方式和接收位置,可控制被设计阵列的极化方式和扫描角度。与传统做法不同的是,被设计阵列单元的极化方式确定时,通过改变接收天线的极化方式,阵列还能产生与单元极化相反的极化方式,同时两种极化方式所得的增益差距在1dBi以内。本文以中心频率在2.45GHz的左旋圆极化单元组成的十六单元阵列为例,说明如何实现阵列左右旋极化的可重构以及+/-60°的扫描功能。     

基于最大功率传输效率法的聚焦天线设计北大核心CSCD

采用传统方法设计天线时，往往存在能量转换效率较低、能量浪费严重的问题，但大部分优化方法又都有操作过于复杂的缺陷。本文提出了一种采用最大功率传输效率（MMPTE）方法设计的毫米波微带天线阵列。该天线由4×4个矩形贴片辐射单元和微带线馈电网络组成，并通过MMPTE来优化天线馈电网络的相位和幅度。本文所设计的天线阵列具有结构简易、辐射效率高、成本低廉、体积较小、性能良好等优点，可根据需求应用于不同的Ka波段毫米波天线系统。     

基于最大效率传输算法的多波束阵列天线北大核心CSCD

应用传统优化馈电幅值相位的方法来设计多波束阵列天线时，计算量与过程比较复杂，采用一些优化算法也往往只能得到局部最优解。而基于最大功率传输效率法(MMPTE)对天线阵列进行优化，可以得到理论上最优的天线单元馈电的幅值和相位。本文首先介绍了最大功率传输效率法，然后设计了微波多波束阵列天线，采用MMPTE对其进行优化。仿真结果验证了最大功率传输效率法在设计微波多波束阵列时具有良好的优化效果。     

多波束阵列天线的稀疏化设计

讨论利用加权最大功率传输效率法(Weighted method of maximum power transmission efficiency,WMMPTE)实现多波束阵列天线的稀疏化,使得天线单元数目小于天线波束数数目.待设计天线与置于波束方向的测试天线形成无线功率传输系统,再利用WMMPTE优化可得到多波束阵列天...     

基于最大功率传输效率法的近场三维方向图赋形

讨论如何利用带约束的最大功率传输效率(CMMPTE)法通过阵列天线来综合三维方向图.通过引入测试接收阵列天线,待设计的阵列天线与之构成无线功率传输(WPT)系统,从而将方向图的综合问题转换成WPT系统功率传输效率(PTE)的优化问题.通过调整约束条件,在保证PTE最大化的条件下可获得阵列天线的激励分布,根据激励分布设计...     

三端口宽带极化可重构紧耦合天线阵列

提出了一种三端口宽带极化可重构紧耦合天线阵列。该阵列单元由蝶形偶极子、阻抗变换器和巴伦组成,通过最大功率传输效率法(MMPTE)优化出天线三个端口的所需最优激励分布,从而实现天线在左旋圆极化(LHCP)和右旋圆极化(RHCP)以及在方位角平面任意角度线极化(LP)多种辐射模式之间的切换。最终优化得到的阵列的尺寸为π×60² mm²×30 mm(π×0.7²×0.35λ₀³=0.549λ₀³,其中λ₀为中心频率处的自由空间波长)。测试结果表明,该阵列在左右旋圆极化和线极化状态下的相对阻抗带宽(|S₁₁|<-10 dB)都为50.7%,且3 dB增益带宽基本能覆盖阻抗带宽。左右旋圆极化轴比小于3 dB,并且轴比带宽(AR<3 dB)可以覆盖整个阻抗带宽。在3.5 GHz处,阵列在各种极化状态下的最大实际增益均大于8.8 dBi。     

用单极子阵列天线实现近场区电磁场调控

为了实现对阵列天线内部近场区域电磁场的控制,设计制作了一款工作频率为2.45GHz的低成本环形印刷单极子阵列天线。通过在需要加强电磁场预先设置的特定曲线上排布辅助偶极子天线阵列,利用两个阵列之间的功率传输效率最大化理论,得到印刷单极子天线阵列所需的最优化激励分布。基于上述方法,阵列天线近场区域的电磁场可以被调控成由预置曲线指定的任意不同形状。验证了电磁场分别被赋形为正方形、圆形和L形时的3种情况。     

微波输能应用中整流天线阵列接收效率的研究

整流天线阵列是微波无线能量传输系统的重要组成部分,其接收和转换效率关系到能量无线传输的成败。在5.8 GHz频段采用矩形、圆形和三角形3种微带贴片单元,分别以发射天线阵列最大口径效率和接收天线阵列最高接收效率为目标进行优化,仿真计算了各天线阵列对空间电磁来波的接收效率。结果表明,天线单元形状会影响整流天线阵列的接收效率,相对于按发射天线阵列最大口径效率设计,以最高接收效率优化排布的整流天线阵列,对空间电磁来波的接收效果较好。     

任意极化波的功率传输效率计算及其对天线测量精度的影响

在测量圆极化天线辐射特性时，无论采用何种极化的测试信标天线，都会存在极化损失，即功率传输效率小于1，由此引入的测量误差是信标天线及待测天线极化特性的函数，因此需要对测量数据进行误差分析以及适当的修正。本文导出了任意两个椭圆极化波在一般情况下功率失配因子随轴比γ和轴倾角τ变化的计算公式，对工程中常见的几种情况进行了定量分析计算，讨论了功率失配校正因子的取值范围，以及对天线辐射特性测量精度的影响。     

一种双极化液晶阵列天线设计与方向图综合方法

针对极化相控阵雷达应用背景,提出了一种基于电磁调控液晶的二维方向图可重构双正交极化阵列天线设计方法.该阵列天线设计由两种极化方式的亚波长超表面天线线阵交替排列构成,线阵上的单元均有两种工作状态,且每个单元都可以独立控制.该天线在一个方向维度上利用液晶超材料结构的电磁调控能力采用全息方向图综合方法实现了两个极化方式的独立调控,另一个方向维度上采用外部移相器对两个极化方式进行分别调控,创新地在两个方向维度上分别实现了正交极化信号的同时方向图重构,并确保了正交极化在二维方向图重构的一致性和良好的隔离度.仿真结果表明在法线两个正交极化的主瓣电平差小于0.01 dB,波束指向角为-40°时两个正交极化的的主瓣电平差小于0.02 dB.文章提出的双极化液晶阵列天线设计和方向图综合方法具有正交极化一致性好、结构简单等特点,并具有低功耗、低损耗、低成本制造、轻薄等优点,为小型全极化相控阵雷达精确信号制导应用提供了一个新颖的设计方案.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.