共查询到18条相似文献,搜索用时 125 毫秒
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从常规电子产品热设计基础理论的理解分析入手,结合实际应用,阐述了混合集成电路典型装配结构热阻的简便分析方法;绘制了多种典型结构的内热阻与发热芯片面积的关系曲线和外热阻与封装表面积的关系曲线;提出了通过典型结构热阻曲线分析产品芯片结温的方法,及相应问题的处理办法;对一般混合集成电路的非精确热设计有一定的参考意义。 相似文献
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提出了一种基于热阻网络的叠层芯片结温预测模型,该模型根据芯片内各组件的尺寸和热导率计算出对应的热阻,同时考虑了接触热阻和热量耦合效应,从而得到每层芯片在不同功耗情况下的结温预测值。在一个三芯片堆叠结构中,使用提出的方法对芯片结温进行预测,并与ANSYS仿真软件结果作比较,发现结温预测值的相对误差均小于4.5%。因此,该模型仅需根据芯片结构和材料参数,便可快速精确地估算出芯片在不同工作环境下的结温值。 相似文献
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在对全光网络存在的安全问题分析的基础上,总结了现存的攻击方法,讨论了光纤传感器在全光网络安全及防范措施中应用,在现有的理论模型基础上提出一种新型的全分布式光纤传感器模型,最后分析了该方案解决全光网络安全隐患的有效性. 相似文献
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焦鸿浩唐丽朱思雄张振越 《微电子学与计算机》2022,(12):125-132
系统级封装(SIP)实现了高密度、高集成度封装技术,同时散热问题备受关注,热设计中芯片结温预测十分重要.本文采用有限元仿真方法,建立了一种自然对流环境下微系统热阻模型,并通过模型中热阻矩阵预测多芯片总功耗相同条件下的各芯片结温,同时利用热阻测试试验和有限元仿真方法对预测结温进行验证,结果表明热阻矩阵模型预测芯片结温与热阻测试试验和有限元仿真结果误差分别小于2%和5%.但同时发现该热阻矩阵模型的不通用性,对于总功耗变化的多芯片结温,预测结果偏差较大.通过不同总功耗下各热阻矩阵的函数关系建立拟合曲线并修正热阻矩阵模型,修正后的结环境热阻矩阵适用于不同总功率条件、各芯片不同功率条件下的芯片结温预测,预测结果与热阻测试试验中芯片结温和有限元仿真结果误差均小于5%.因此,提出的修正结环境热阻矩阵的方法可以快速且便捷地预测不同功率芯片的结温,并对器件的散热性能进行较为准确的预估. 相似文献
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《Microelectronics Reliability》2015,55(5):822-831
The thermal mode analysis is used in this paper to optimize the thermal management with optimal locations and chip sizes for multi-chip package. The average thermal resistance is defined and analyzed. The spreading thermal resistance can be expanded into Fourier series so that the thermal modes can be established. For the infinite thermal modes, only a few terms are needed to be considered due to the rapid convergence of solution. The optimal locations and chip sizes can then be determined by using the first few modes to reduce the thermal resistance as minimal as possible. The optimal locations have the cosine wave property so that the wave nodes might be the suitable sites. On the other hand, the optimal chip sizes have the cardinal sine property which decays monotonously. For given optimal locations, the optimal chip sizes are determined by certain modes. These special modes can be used to analyze the range of optimal locations and chip sizes. 相似文献
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The in third-order intermodulation as a function of emitter current in a bipolar transistor is exploited to find emitter Ohmic resistance. The measurement can be carried out using only low-cost equipment and a scalar receiver. Results for an heterojunction bipolar transistor (HBT) are compared with those found using a vector network analyzer and a sophisticated extraction algorithm. The method is extended to simultaneously determine thermal resistance, R/sub TH/, and to obtain a most precise estimate of emitter resistance. 相似文献
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Interfacial thermal resistance and temperature dependence of threeadhesives for electronic packaging
Hasselman D.P.H. Donaldson K.Y. Barlow F.D. Elshabini A.A. Schiroky G.H. Yaskoff J.P. Dietz R.L. 《Components and Packaging Technologies, IEEE Transactions on》2000,23(4):633-637
The thermal resistance and its temperature dependence was measured for three industrial adhesives used for electronic packaging. Measurements were made by the laser-flash method from room temperature to 300°C. The samples were in the form of sandwiches consisting of two platelets of silicon carbide-reinforced aluminum (AlSiC) bonded together with the adhesives. The total thermal resistance of the bond (the sum of the bulk thermal resistance of the adhesive and the resistances at the two interfaces) was calculated from the thermal response of the sandwich subjected on one side to a single laser-flash. The total thermal resistance was found to decrease with increasing temperature. The bulk thermal resistance of the adhesive, calculated from its thickness and independently determined thermal conductivity, was found to be relatively independent of temperature. The interfacial resistance at the AlSiC interfaces, depending on the adhesive, ranged from about 60 to 80% of the total resistance decreasing to about 50% of the total interfacial resistance at 300°C. For two of the adhesives considered in this study, the interfacial thermal resistances for the AlSiC/adhesive interfaces were found to be considerably higher than those found in an earlier study of Si/adhesive interfaces 相似文献
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Osone Y. Mochizuki K. Tanaka K. 《Components and Packaging Technologies, IEEE Transactions on》2005,28(1):34-38
We will describe the thermal performance of a special heterojunction bipolar transistor (HBT) structure for mobile communication systems, called a collector-up HBT. We calculated the thermal resistance between the HBT fingers and the bottom surface of a GaAs substrate using a finite element method (FEM). The results suggest that the thermal resistance of collector-up HBTs with thermal via structures can be reduced by 64% compared to the thermal resistance of ordinary emitter-up HBTs. They also show that the thickness of the InGaP emitter layer effects the thermal resistance of, and the temperature distribution in, the collector fingers of collector-up HBTs. Even though the thermal resistance of collector-up HBTs can be much smaller than that of emitter-up HBTs, a thermal interaction between the collector fingers still exists in multi-finger structures. We analyzed the temperature distribution in the collector fingers of a four-finger HBT structure and found that the thickness of the plated heat sink (PHS) was not sufficient to reduce the thermal interaction between the HBT fingers, and that optimization of the HBT location was needed to minimize the thermal interaction. We also found that the thickness of the InGaP emitter layer was the most important parameter for reducing thermal resistance, even in four-finger HBT structures. These calculation results can be used to reduce the temperature of collector-up HBTs and the temperature differences between the HBT fingers in the development of power amplifiers with collector-up HBTs. 相似文献
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Bagnoli P.E. Casarosa C. Ciampi M. Dallago E. 《Power Electronics, IEEE Transactions on》1998,13(6):1208-1219
In this paper, a careful theoretical analysis of the thermal dynamics of an electronic device and its package was carried out in order to study the problem of the equivalent thermal circuit implementation. It was found that the device temperature evolution in time is ruled by an infinite and convergent series of time constants. The knowledge of the first n terms of the time-constant spectrum obtained from the temperature transient measurements allows the complete characterization of a suitable and reliable equivalent thermal circuit structured as a Cauer low-pass network with n cells. The total thermal resistance is therefore evaluated as a sum of several contributions due to given parts of the whole system. The techniques allowing the physical identifications of these contributions are also discussed. Furthermore, the influence of plastic coverage on the device thermal behavior is taken into account. The proposed characterization method is also applied to one-dimensional (1-D) multilayered simulated structures in order to study the influence of the number of time constants used for the analysis and effects of local defects or modifications of the material thermal properties 相似文献