小型地磁传感器的低噪声前置放大电路设计

一些小型地磁传感器输出噪声电压水平在10 nV/Hz左右,现有nV级噪声水平的前置放大器体积太大难以满足其信号调理需求.针对这个问题,本文阐述了低噪声放大电路输入级设计原理,利用Multisim对输入级电路等效输入噪声电压等指标进行仿真,研制出一种基于差分输入的小型低噪声前置放大电路.给出了电路关键性能指标的仿真和测试结果,测试结果表明该电路具有良好的噪声特性和共模抑制比,噪声电压水平仅为3.7 nV/(Hz)～(1/2)@3.5 kHz,共模抑制比110 dB,增益为100～1 000连续可调.     

L-S波段高增益低噪声放大器设计与实现

本低噪声放大器相对带宽较宽;增益较高达36dB;在此基础上要求噪声系数全频段小于1.5;输入输出驻波比小于1.5。适用于同轴线传输的低电平信号的前置放大。     

3～5μm室温碲镉汞低噪声放大器

本放大器用于光学测温及其他非接触测量的弱信号放大。本放大器采用低噪声晶体管, 合理选用工作点,并采用低噪声偏置电路等降低噪声的措施,使放大器的噪声指标达到或接近国内同类放大器的先进水平,中心频率为1000Hz的单位带宽电压噪声E_n=1.72nV,电流噪声I_n=2.6PA。     

PVDF-ⅠⅡ型压电薄膜高频水听器

本文介绍了一种内装宽带低噪声前置放大器的新型PVDF压电薄膜平面高频水听器。在100kHz～1MHz频率范围内,水听器灵敏度频率响应平坦,不均匀性小于±2dB;灵敏度级(包括前放增益)可达-205dB。     

FGQF2000A型光学前置放大器电路简析

FGQF2 0 0 0A型前置放大器是哈尔滨电影机械厂研制生产的产品,具有低失真、低噪声、工艺结构合理等特点。它与CPA4 0 1功率放大器、PS L型激励灯电源(或FH 2 0 1型双红光电源)、机柜及PS4 2 0 8型扬声器系统一起配套用于松花江5 5 1 5B30 0 0型放映机的电影还音。一、技术指标①、输入信号电压:≤5mV。②、额定输出信号电压:0dB (即0 .775V)。③、谐波失真系数:≤0 .1 5 % (1KHz)。④、输入过激励能力:≥2 0dB (即≥7.75V)。⑤、频率特性:4 0Hz～1 2 .5KHz±1 .5dB。⑥、信号噪声比:>6 5dB (线性)。⑦、电源电压:AC2 2 0V±1 0…     

PVDF—IⅡ型压电薄膜高频水听器

本文介绍了一种内装宽带低噪声前置放大器的新型PVDF压电薄膜平面高频水听器。在100kHz－1MHz频率范围内，水听器灵敏度频率响应平坦，不均匀性小于±2dB；灵敏度级（包括前放增益）可达－205dB。     

低频功率放大器

系统共有五部分组成,分别用波形变换电路、弱信号前置牵制放大电路、功率放大电路、功率指示与保护电路、自制稳压电源等。波形转换采用的是集成电路,用NE5532作为放大级,用来推动功率放大,功率放大的末级采用的是分立元件,也属于典型的OCL电路,主要承担电压放大任务,由于在噪声、转换速率、增益宽带积等方面优异的指标,而且一定的输出电流,做功率推动及很合适。前置放大器由两级组成,它的任务是完成小信号的电压放大,其失真度和噪声对系统的影响最大,故采用了低噪声、高保真度的双通道专用音响前置集成放大器NE5532,均采用电压并联负反馈电路,因电压并联负反馈具有良好的抗共模干扰能力,具有改善波形失真的作用。     

高精度射频宽带放大器设计方法研究

本文重点论述了高精度射频宽频带放大器的设计原理和方法.包括射频宽带放大器的电路设计方案分析;射频宽带放大器的详细设计;射频宽带放大器的输入阻抗;以及降低噪声;提高增益等性能的方法设计等.采用高精度、高阻抗的集成运算放大器AD8009射频宽带放大器电路,进行了射频宽带放大器电路设计制作实验调试,对宽带放大器带宽、增益提高方法进行了详细的实验研究.通过大量的实验测试证明:本文所论述的射频宽带放大器设计方法合理正确,放大器的性能指标达到输出阻抗R≤50Ω,输入阻抗R≤50Ω;准确度优于0.1%;电压增益大于20dB,输出电压≥200mV.输出信号波形无明显失真;放大器的下限截止频率≤0.3 MHz,上限截至频率≥50 MHz,并在1 MHz~20 MHz频带内增益起伏≤1dB.     

L波段高增益低噪声放大器的设计

低噪声放大器(LNA)是接收机的重要组成部分,它的性能的好坏直接影响着接收机的灵敏度,增益和噪声系数是LNA的两个最重要的指标,所设计的低噪声放大器中心频段为1650MHz时,工作带宽为200M,噪声系数为1.3dB,增益大于35dB,带内平坦度小于±0.5dB,达到应用要求。     

数据采集系统共模抑制比的测量实验研究

介绍了数据采集系统共模抑制比参数的概念、内涵及定义,并阐述了数据采集系统共模抑制比测量中的5个问题：1）共模干扰的非线性问题;2）共模干扰表现形式的多样性,即直流偏移形式,交流波动形式,噪声水平变化形式;3）本底噪声影响的测量及剔除方式,即方差（能量）相减方式,有效值差方式,绝对值均值差方式;4）共模信号端接方式的影响;5）直流共模抑制比和交流共模抑制比的差异。以一个典型数据采集系统上的实验结果,阐述了上述不同条件变化对共模抑制比测量结果的影响,给出了数据采集系统共模抑制比测量的技术建议。     

1/f frequency noise of 2-GHZ high-Q thin-film sapphire resonators

We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20000 was estimated from the phase response. The results show that the FM noise of the resonators varied between S_y (10 Hz)=-202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from L(10 Hz)=-39 to -47 dBc/Hz     

Noise of piezoelectric accelerometer with integral FET amplifier

Since significant progress has been achieved in the development of low-noise piezoelectric (PE) accelerometers with integral FET amplifiers, detailed noise analysis of the system PE transducer-FET amplifier, and obtaining the engineering formula for its noise floor has become vital. As a result of this analysis, the formula for the noise floor of PE accelerometers in terms of acceleration spectral density is obtained at wide frequency band. Noise floor of the low-noise PE accelerometer comprising low-noise JFET charge amplifiers with some particular parameters of the PE transducer and the JFET amplifier was measured. The theoretical and experimental curves of the PE accelerometer's noise floor have a good correlation with each other at frequencies from 1 Hz to 10 kHz. The contribution of the different noise sources to the overall noise floor is shown. Those noise sources include the mechanical-thermal noise and electrical-thermal noise of the PE transducer and all main noise sources of FET amplifiers: the thermal noise voltage of the FET biasing resistor, the thermal noise of the series resistor between the PE transducer and the gate of the FET, the channel thermal noise voltage, the 1/f noise voltage, and the shot noise current in the gate circuit. At low frequencies, the f/spl les/50 Hz noise floor is determined mainly by the FET biasing resistor's thermal noise and the PE transducer's electrical-thermal noise. At frequencies from about 50 Hz to about 1 kHz, the contribution of the PE transducer's electrical-thermal noise dominates over the amplifier's noise sources by a factor of less than 2. At frequencies above 1 kHz, noise floor is determined mainly by the JFET channel thermal noise and the PE transducer's electrical-thermal noise.     

Common mode rejection ratio in differential amplifiers

The common mode rejection ratio (CMRR) of a differential amplifier (DA) using a single operational amplifier and an instrumentation amplifier (IA) using three operational amplifiers is analyzed, and the complete equations are derived for the case when op amps have finite differential and common mode gains. Amplitude and phase measurements support the theoretical predictions. It is concluded that, at low frequencies, for the single-op-amp DA the use of a trimming potentiometer is better than relying on low-tolerance resistors, because of the higher CMRR achieved. The DA yields a fixed 90° phase shift for the CMRR at frequencies above 1 kHz. For the three-op-amp 1A, it is important that the input buffers are coupled and that they are built from a matched op amp pair. The best CMRR is obtained when the differential gain is concentrated in the input stage, but in any case it decreases at frequencies above 1 kHz because of the reduced CMRR for the differential stage at these frequencies     

A high-voltage electrooptic drive amplifier using a power MOSFETpair

A transformless high-voltage low-current push-pull amplifier using a DMOS (TMOS) power FET pair and capable of driving usual electrooptic (EO) loads with good linearity and sufficient bandwidth is presented. The implemented system provides a low-offset floating output up to 780 V point-to-point (p-p) maximum amplitude (1% distortion limit) for a differential input up to 7.0 V p-p. The maximum, open-circuit gain-bandwidth product for the stage exceeds 1.5 GHz, and its bandwidth decreases from 3.2 MHz to 200 KHz when the load capacitance C _L increases throughput the range of usual EO loads (4-100 pF). The noise contamination is sufficiently low, the maximum output SNR (signal-to-noise ratio) exceeding 70 dB     

A low-noise latching comparator probe for waveform sampling applications

A new latching comparator probe is described. The probe is being developed as part of an effort to augment voltage measurement capability in the 10 Hz to 1 MHz frequency range. The probe offers an input voltage range of /spl plusmn/10 V, input impedance of 1 M/spl Omega/ and root mean square noise referred to the input as low as 55 /spl mu/V. The probe's 3-dB bandwidth is approximately 20 MHz. Total harmonic distortion is as low as -93 dB at 50 kHz. Gain flatness is within /spl plusmn/10 /spl mu/V/V from 100 Hz to 100 kHz. Improved step settling performance is achieved using a technique that minimizes circuit thermal errors. The probe's input range can be extended with a frequency-compensated 1-M/spl Omega/ input impedance attenuator allowing measurement of pulses in the microsecond regime up to 100 V. The attenuator can be compensated further with a digital filtering algorithm to achieve gain accuracy better than 100 /spl mu/V/V.     

An Improved 5 MHz Reference Oscillator for Time and Frequency Standard Applications

An improved 5 MHz reference oscillator for use in time and frequency standards has been developed. This oscillator, using an improved crystal unit, reaches a long term drift rate of less than 1×10-11 per day in a few days. The design includes precautions for reduction of effects of conducted electrical noise on the output frequency. Modular design of functional circuits provides ease of manufacture and uniformity of the product. Stabilized temperature control circuits have been utilized to provide improved oven performance. The oscillator has been tested for the effects on frequency and phase stability of power supply variation, changes in thermal environment, modulation by electrical noise, and mechanical vibration. Phase noise within the range of 100 Hz through 5.0 kHz varies from -120 dB to -125 dB.     

采用预充开关运放的低功耗12位40MS/s流水线模数转换器

设计了一个采用新型预充快速开启开关运放的低功耗12位40MS/s流水线模数转换器(ADC)。该转换器通过采用新型预充开关运放技术、采样保持电路消去结构、动态比较器和优化采样电容,大大降低了电路的功耗。电路设计采用1.8V 1P6M 0.18μmCMOS工艺,仿真结果表明,在40MS/s采样速率下,输入信号为19MHz时,无杂散动态范围(SFDR)为90.15dB,信噪失真比(SNDR)为72.98dB,功耗为27.9mW。     

DC SQUIDs as radiofrequency amplifiers

The optimization of radiofrequency amplifiers involving dc SQUIDs is discussed for both tuned and untuned input circuits. For a given frequency and input coil coupled to the SQUID, expressions are obtained for the optimum source resistance, gain, and noise temperature. The performance of two amplifiers designed according to these predictions is described. The gain of an untuned amplifier operated at 100 MHz and 4.2 K was 16.5±0.5 dB with a noise temperature of 3.8±0.9K; at 1.5 K the gain increased to 19.5±0.5 dB, while the noise temperature decreased to 0.9±0.4 K. A tuned amplifier operated at 93 MHz and 4.2 K had a gain of 18.6±0.5 dB and a noise temperature of 1.7±0.5 K. These results were in good agreement with predicted values.     

Secondary standard for PM and AM noise at 5, 10, and 100 MHz

A practical implementation of a portable secondary standard for phase modulation (PM) and amplitude modulation (AM) noise at 5, 10, and 100 MHz is described. The accuracy of the standard for both PM and AM noise is +0.14 dB, and the temperature coefficient is less than 0.02 dB/K. The noise floor S_φ (10 kHz) of the standard for PM noise measurements is less than -190 dBC relative to 1 rad²/Hz at 5, 10, and 100 MHz. The noise floor for AM measurements depends on the configuration. A calibrated level of PM and AM noise of approximately -130±0.2 dB relative to 1 rad² /Hz (for Fourier frequencies from approximately 1 Hz to 10% of the carrier frequency) is used to evaluate the accuracy versus Fourier frequency. Similar PM/AM noise standards are under test at 10 GHz. This new standard can also be used as an alternative to the normal method of calibrating the conversion sensitivity of the PM/AM detector for PM/AM measurements. Some types of time-domain measurement equipment can also be calibrated     

Frequency- and intensity-noise measurements of a widely tunable 2-/spl mu/m Tm-Ho:KYF laser

The measurement of the frequency and intensity noise in a novel single-mode 2-/spl mu/m Tm-Ho:KYF laser is presented. The laser frequency noise is measured by exploiting the fringe side of the transmission of a Fabry-Pe/spl acute/rot interferometer. The measured power spectral density of the frequency noise is principally characterized by a random-walk noise contribution, which sets an emission linewidth of /spl sim/ 600 kHz for the 2-/spl mu/m radiation. The relative intensity noise (RIN) reaches the quantum limit of -155 dB/Hz for Fourier frequencies above 1 MHz and shows a maximum level of -90 dB/Hz at the relaxation-oscillation frequency of 20 kHz.