Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.     

钛酸钠纳米线制备TiO_2纳米线的反应条件

结合离子交换-高温烧结法,由钛酸钠纳米线制备了TiO_2纳米线。通过XRD、Uv-vis漫反射和SEM等测试手段,探讨离子交换时间和高温烧结温度对制备TiO_2纳米线的影响,并以甲基橙为目标污染物测试其光催化性能。结果表明:离子交换时间越长越有利于钛酸纳米线的形成,离子交换48h时钛酸钠纳米线基本转换成为钛酸纳米线;过低的烧结温度不利于TiO_2纳米线的形成,烧结温度650℃时钛酸纳米线基本分解成为TiO_2纳米线;钛酸钠纳米线几乎没有光催化性能,而TiO_2纳米线具有很强的光催化性能。     

Doped ZnO nanowires obtained by thermal annealing

Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.     

In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity

Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.     

自感知镍纳米线/水泥基复合材料的制备及压敏性能

通过多孔氧化铝模板交流电沉积的方法制备了镍纳米线,以镍纳米线为导电填料、聚羧酸减水剂为分散剂,首次制备了新型的自感知镍纳米线/水泥基复合材料。通过SEM、TEM和XRD测试方法,研究了镍纳米线与镍纳米线水泥基复合材料的显微结构,与此同时,用四电极伏安法研究了镍纳米线水泥基复合材料的渗流阈值和压敏性。结果显示：所得的镍纳米线直径约为65 nm,长径比约为50;聚羧酸型减水剂能有效提高镍纳米线的分散性;水泥基复合材料的电阻率随镍纳米线的掺量增加呈现渗流特性,渗流阈值为0.5vol%;掺加1.0vol%镍纳米线的水泥基复合材料的应变灵敏度系数高达509.2,远高于电阻应变片的2.0,适用于混凝土结构应力监测的传感元件。     

DNA-templated copper nanowire fabrication by a two-step process involving electroless metallization

Here, we report a new fabrication method of DNA-templated copper nanowires. The copper nanowires were fabricated via two-step reactions. First, Pd(II) ions were electrostatically adsorbed onto negatively charged DNA molecules immobilized on the substrate surfaces and reduced chemically. As a result, palladium nanowires with a diameter of approximately 6 nm were obtained. Second, the palladium nanowires were dipped into a copper electroless plating bath. Electroless deposition of copper proceeded specifically on the palladium nanowires. The diameters of the copper nanowires were controlled by the plating time.     

Synthesis of amorphous Si nanowires from solid Si sources using microwave irradiation

Si nanowires were synthesized from Si wafers and from thin Si films deposited on various substrates by microwave irradiation. The power and time were key determinants of the diameter and morphology of the synthesized Si nanowires. The nanowires had an amorphous structure due to the extremely high heating rate. Carbon coating of the Si nanowires was easily achieved by introducing acetylene after synthesizing the nanowires. Carbon-coated Si nanowires are potential candidates for use as the anode material in next generation Li-ion batteries.     

MS(M=Cd或Zn)纳米粒子负载TiO_2纳米线的制备及可见光催化性能

以具有层状结构的钛酸盐纳米线、CdCl2或ZnSO4及硫代乙酰胺为原料,采用两步水热合成法制备了高温稳定的六方相CdS或低温稳定的立方相ZnS纳米粒子负载的TiO2纳米线复合材料。首先,CdCl2或ZnSO4与钛酸盐纳米线在水热条件下进行离子交换制得含Cd2+或Zn2+的钛酸盐纳米线;然后,在硫代乙酰胺溶液中于160℃下直接处理含Cd2+或Zn2+的钛酸盐纳米线就可获得负载有硫化物纳米粒子的TiO2复合纳米线。它们在酸浸后,TiO2纳米线的表面仍存在少量硫化物纳米粒子。通过测试酸浸后样品、纯TiO2纳米线和商用P25对亚甲基蓝水溶液的可见光催化降解实验结果证实,含CdS纳米粒子样品的光催化活性最高。     

Synthesis of SiC nanowires with in-situ deposition of carbon coating

SiC nanowires are effective reinforcement materials in ceramic matrix composites. A compliant coating such as carbon on nanowires is necessary in order to moderate the nanowire/matrix interfacial bounding for taking the most advantages of SiC nanowires. SiC nanowires with an in-situ deposition of carbon shell coating were fabricated by a novel chemical vapor growth process. Highresolution transmission electron microscopy examinations showed that the nanowires consisted of a single crystal beta-SiC core with an amorphous carbon shell 2-5 nm in thickness. The nanowires were straight with a length generally over 10 microm and a diameter 15-150 nm. The growth direction of the core SiC nanowires is (111). A simple three-step growth model for SiC nanowires was proposed based on a vapor-solid growth mechanism. Because the carbon-coated nanowires were grown directly on continuous Tyranno-SA SiC fibers, in-situ application of the present technique on the fabrication of SiC nanowire-reinforced SiC/SiC composites is expected.     

Investigation of initial growth of ZnO nanowires and their growth mechanism

ZnO nanowires were synthesized on Si substrates by a simple metal vapor deposition method without any catalysts. The initial growth and the growth mechanism of the ZnO nanowires were studied using scanning and transmission electron microscopy. We found that the ZnO nanowires grew on the Si substrate via a self-seeding vapor-solid mechanism. The growth process of the ZnO nanowires consisted of four steps: self-seeding, one-dimensional epitaxial growth of the nanowires on the seeds by a base-growth mode, further acceleration of nanowire growth with additional seeding, and active formation of the nanowires.     

立方相MgZnO纳米线的制备和表征

利用热蒸发方法,在硅衬底上制备出立方MgZnO纳米线。以Mg粉为源材料,所制备的为立方相MgO纳米线。以Mg粉和Zn粉混合物为源材料,可以制备出立方相MgZnO纳米线,Zn含量7%,直径200～300nm,具有单晶结构;同时产物中还包括六方相ZnO纳米线,直径30nm左右。MgZnO纳米线中Zn含量远低于源材料中的Zn含量,这可能是ZnO和Zn的蒸汽压远大于MgO和Mg的缘故。     

多孔SiCO陶瓷中SiC纳米线的原位合成及生长机理

采用聚氨酯海绵为多孔模板, 浸渍有机硅树脂后在Ar气氛中原位合成了SiC纳米线。采用TG、XRD、SEM和TEM等分析测试手段对样品进行了表征, 研究了保温时间对合成SiC纳米线的影响, 并探讨了SiC纳米线的生长机理。研究结果表明: SiC纳米线生长在多孔陶瓷中, 纳米线长度达几十微米, 单根纳米线的直径不均一。SiC纳米线的生长机理为VS生长模式。随着保温时间的延长, 纳米线的数量增加, 形貌发生了变化, 且多孔陶瓷的比表面积明显增大, 体积电阻率降低。     

Room-temperature hydrogen sensor based on palladium nanowires

Palladium (Pd) nanowires, synthesized by template-nanomanufacturing techniques, has been studied for hydrogen gas-sensing applications at room temperature. In this study, parallel arrays of Pd nanowires were fabricated by electrodeposition from an aqueous plating solution onto the surface of highly oriented pyrolytic graphite (HOPG). The nanowires were then transferred onto a polystyrene film and silver electrical contact pads were fabricated by shadow masking. The morphology of the nanowires was analyzed using atomic force microscope (AFM) in noncontact mode and the diameter of the observed nanowires was measured to be approximately 250 nm. Scanning electron microscope (SEM) images revealed that the nanowires fabricated by this procedure were parallel and continuous. Electrodes were patterned by shadow masking and the I-V characteristics of the nanowires were studied. Experimental results indicated that the sensors are highly sensitive to hydrogen, showing a two-order change in conductance. The morphology of the nanowires was analyzed using SEM and AFM in order to understand the properties responsible for the high sensitivity of the nanowires. SEM images showed that the nanowires contain nanogaps in absence of H/sub 2/. Upon exposure to H/sub 2/, the Pd absorbed hydrogen, resulting in the expansion of Pd grains. This expansion results in the closing of the nanogaps. The expansion occurred due to the phase transition from /spl alpha/ to /spl beta/ and the Pd lattice expansion.     

紫光激发提高Ag修饰的ZnO纳米线的气敏特性

为了提高ZnO纳米线的酒敏特性,利用紫光激发经浸渍法获得Ag修饰的ZnO纳米线.利用扫描电子显微镜（SEM）,X射线衍射仪（XRD）对修饰后的ZnO纳米线进行了晶体结构和形貌的表征.结果表明其晶体结构中既有六方纤锌矿结构的ZnO,又有面心立方的Ag.三维网络结构的ZnO纳米线的表面被一层致密的具有高孔隙率的Ag颗粒覆盖,使得ZnO纳米线具有更高的比表面积.纯ZnO纳米线和Ag修饰的ZnO纳米线都用作气敏基料,根据它们在酒精蒸气中紫光照射和无紫光照射条件下电阻的变化来测定它们的气敏特性.结果显示紫光照射下经质量分数为6%AgNO3修饰的ZnO纳米线对酒精蒸气的最大灵敏度由75.8提高到175.77.此过程中光催化氧化-还原反应起到了重要作用.     

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.     

The oxides growth during high-temperature oxidation of Si1-xGe(x) nanowires

Concerning the oxidation behavior of Si1-xGe(x) (x = 0.15, 0.3) nanowires at high temperature, Si1-xGe(x) nanowires were thermally oxidized for various lengths of time compared with Si nanowires, Si and Si1-xGe(x) thin films. The structural and compositional properties of the oxidized nanowires were characterized using several transmission electron microscopy (TEM) techniques including energy dispersive X-ray spectroscopy (EDS), which confirm that the oxidation rates of Si1-xGe(x) and Si (silicon) nanowires were saturated with increasing oxidation time due to retarding behavior, while the oxidation rate of Si1-xGe(x) nanowires were faster than that of Si nanowires. In addition, the differences in Ge (germanium) content and stress distribution contribute to the observed differences in oxidation behavior.     

A novel route to the synthesis of silica nanowires without a metal catalyst at room temperature by chemical vapor deposition

Silica nanowires were synthesized by employing inherent directionality of chemical vapor reaction between bis(ethylmethylamino)silane (H(2)Si[N(C(2)H(5))(CH(3))](2)) precursor and water without a metal catalyst at room temperature. The difference in the oxidation reactivity between Si-H and Si-N bonds with water leads to the formation of silica nanowires. The mean diameter and length of the silica nanowires grown for 10 min were 60-80 nm and 1.9 μm, respectively. Transmission electron microscopy revealed that the obtained nanowires had the concave tip, differing from other silica nanowires produced by a conventional vapor-liquid-solid method, and were amorphous. Energy dispersive X-ray spectroscopy, Fourier transform infrared, and X-ray photoelectron spectroscopy results also proved that the nanowires have a close composition to stoichiometric SiO(2). Silica nanowires were successfully synthesized on a poly(ethylene terephthalate) film. The nanowires can emit strong blue light and ultraviolet light under excitation at 266 nm.     

Surfactant mediated assembly of gold nanowires on surfaces

The potential of surfactant interactions to direct both the placement and orientation of gold nanowires onto surfaces from solution has been investigated. Gold nanowires were synthesized by template electrodeposition in porous aluminum oxide membranes. Their assembly onto surfaces was controlled by functionalizing the nanowires and surfaces with self-assembled monolayers of thiol based surfactants. Nanowires were assembled from solution onto patterned functional surfaces, and after excess solvent had evaporated the arrangement of nanowires on the surface was observed. A variety of assembly techniques, based upon wettability, electrostatic, or chemical interactions have been studied. Nanowire assembly onto surfaces with patterned wettability resulted in the placement of nanowires on hydrophilic regions with a specific orientation. Hydrogen bonding and carboxylate salt attachment of mercaptoundecanoic acid functionalized nanowires to reactive regions of patterned surfaces has been demonstrated, with unbound wires removed by washing. Similarly, electrostatic interactions between charged nanowires and surfaces have been demonstrated to preferentially assemble nanowires onto oppositely charged surface regions. Although selective attachment of nanowires to reactive surface regions was achieved by both chemical and electrostatic assembly techniques, these methods did not control the orientation of assembled nanowires.     

Synthesis of copper-ferrous (CuFe) nanowires via electrochemical method and its investigations as a fluid sensor

The special behaviour of nanowires with respect to electrical conductivity makes them suitable for sensing application. In this paper, we present a copper-ferrous (CuFe) nanowires based sensor for detection of chemicals. CuFe nanowires were synthesized by template-assisted electrochemical method. By optimizing the deposition parameters, continuous nanowires on a copper substrate were synthesized. The morphological and structural studies of the synthesized CuFe nanowires were carried out using scanning electron microscope (SEM) and X-ray diffraction (XRD). Substrates containing CuFe nanowires were moulded to form a capacitor. Different chemicals were used as dielectric in the capacitor which showed that the capacitance was a nonlinear function of the dielectric constant of fluid unlike the linear relation shown by conventional capacitors. This unique property of the nanowires based capacitors may be utilized for developing fluid sensors with improved sensitivity.     

Electrodeless growth of silver iodide nanowires in a polycarbonate membrane using chemical reaction

We report the fabrication, structural and optical characterization of Silver iodide (AgI) nanowires. Large scale uniform nanowires with lengths 40 m and diameter 100 nm were grown using the simple chemical reaction technique. Morphological study of AgI nanowires was done using scanning electron microscopy. X-ray diffraction studies show the crystalline structure of AgI nanowires. Energy dispersive X-ray fluorescence technique was used to study the composition of AgI nanowires. UV–Vis absorption studies were made to calculate the optical band gap of AgI nanowires. Photo-luminescence spectrum shows a broad emission peak around 460 nm.