光探测器芯片小信号等效电路模型的建立

提出了一种光探测器芯片小信号等效电路模型及其建立方法,首先根据光探测器的物理结构确定其等效电路模型,模型考虑了影响光探测器高频性能的主要因素，然后精确测量了光探测器芯片的S参数,通过遗传算法对测量的S参数进行拟合,最终计算出模型的各个参量，在130MHz-20GHz范围内的实验结果表明,模型仿真结果与测量结果相吻合,证明了建模方法的可靠性。该模型有效地模拟了光探测器芯片的高频特性,利用该模型可以对光探测器及相应光电集成器件进行电路级仿真和优化。     

PIN光探测器的小信号电路模型参数的提取

提出了一种利用自适应遗传算法提取p-i-n光探测器小信号电路模型参数的方法.文章首先根据p-i-n光探测器的物理结构确定其等效电路模型,进而采用自适应遗传算法对测量的S参数进行拟合,提取模型参数.自适应遗传算法自动优化交叉概率和变异概率,避免了以往遗传算法中易早熟的缺点.利用该法成功提取出模型的10个参数,建立光探测器小信号电路模型.在130 MHz～20 GHz范围内的实验结果表明,模型仿真结果和测量结果相吻合,证明了这种参数提取方法的可靠性.     

光探测器芯片的高频特性测量

为了克服用共面探针测量光探测器芯片的高频特性对电极结构的限制．提出了一种精确测量光探测器芯片的阻抗和频率响应的新方法。对于任意电极结构的探测器芯片，首先把芯片与测试夹具连接，通过一系列的校准和测量，可以得到夹具的S参数，进而利用微波理论扣除整个测试夹具的影响，得到探测器芯片的S参数，计算出光探测器的阻抗和频率响应特性。用该方法对P极和N极共面的光探测器芯片的阻抗和频率响应特性进行了测量，并与直接用微波探针测量的结果相比较，验证了该方法在50MHz～16GHz的频率范围内的正确性。     

自适应遗传算法提取pin光探测器小信号模型参数的研究

采用自适应遗传算法对pin光探测器小信号等效电路模型的参数进行了提取,用提取到的模型参数计算得到的S参数与实际测试的S参数进行了比较,为进一步说明提取到的数据的合理性,采用ADS仿真得到了高频处的S参数。     

流图法在光探测器芯片高频特性测量校准上的应用

在采用光调制法测量光探测器芯片高频响应特性的过程中,测试系统往往忽视光调制器响应、高频探针衰减以及端口间失配等误差中的一项或几项.为了降低校准不完善对结果造成的误差,文中提出了基于信号流图的系统校准分析方法,考虑了各种频响误差及端口间失配的影响,推导出校准公式.利用该法对一种光探测器的典型测试系统--基于LCA(lightwave component analyzer)的测试系统做了进一步校准分析,在130MHz～20GHz范围内,测量了一种新型光探测器的高频响应参数S21,结果表明经流图法校准的S21参数比仅使用原有校准算法有明显改善,证明了该方法的可行性.     

流图法在光探测器芯片高频特性测量校准上的应用

在采用光调制法测量光探测器芯片高频响应特性的过程中,测试系统往往忽视光调制器响应、高频探针衰减以及端口间失配等误差中的一项或几项.为了降低校准不完善对结果造成的误差,文中提出了基于信号流图的系统校准分析方法,考虑了各种频响误差及端口间失配的影响,推导出校准公式.利用该法对一种光探测器的典型测试系统--基于LCA(lightwave component analyzer)的测试系统做了进一步校准分析,在130MHz～20GHz范围内,测量了一种新型光探测器的高频响应参数S21,结果表明经流图法校准的S21参数比仅使用原有校准算法有明显改善,证明了该方法的可行性.     

用改进的遗传算法提取PIN光探测器模型参数

光探测器是光电集成电路接收机的重要组成部分,成功提取光电探测器等效模型电路的参数将会对光电集成的研究起到重要作用.将改进的遗传算法用于PIN光探测器小信号等效电路模型参数的提取和优化中,实现PIN光探测器S21、S22参数的测量值与模拟值拟合.改进后的遗传算法自动优化了遗传、杂交和变异算子,节省了寻找最佳遗传、杂交和变异概率的时间,提高了参数提取的速度.     

跨阻放大器S参数与跨阻增益间的关系

在等效电路模型基础上,推导了单端输入单端输出和单端输入差分输出情况下跨阻放大器跨阻增益计算公式,探讨了光探测器输出阻抗对跨阻增益的影响,分析了电路S参数与跨阻增益的关系。并且利用ADS仿真工具对理论推导进行了仿真验证,最后通过实验测量单端输入单端输出跨阻放大器的S参数及数据分析,对理论进行了验证。     

射频场效应晶体管的交流小信号建模技术研究

提出了新的金属-氧化层-半导体-场效晶体管（MOSFET）器件的小信号等效电路结构,提取了等效电路结构的元件参数值,在器件建模型软件IC-CAP2008下,对等效电路模型和提取的元件参数进行编译,生成了能够应用于射频与微波领域的场效应晶体管的高频小信号器件模型,将生成的器件模型编译到高频仿真软件ADS中,并调用S参数仿真器对器件模型进行S参数仿真,最后对比了仿真结果与测试数据的差异性,对生成的器件模型做出了误差分析,展示了所建小信号模型的良好性能。     

应用于激光雷达信号处理系统的放大电路接口设计

应用于激光雷达(LiDAR)测量系统的单芯片全集成信号处理电路系统的设计与实现,对于有效提高激光雷达整机测量精度、数据率,缩短测量时间,减小测量设备体积和功耗具有重要的意义。考虑到目前对于信号处理电路系统的研究中较少考虑芯片在实际使用环境中的接口问题,基于光电探测器、裸芯片、封装、传输线及测试板等诸多接口影响因素,运用协同仿真分析的方法,在电路系统的实际工作频段内,建立了一种精确的、能反映激光雷达信号处理电路系统放大电路芯片真实应用环境的接口一体化仿真模型,并通过S参数仿真对其进行验证。同时基于CMOS工艺,将设计得到的放大电路系统进行流片,在芯片输入端承载不同光电探测器寄生负载的情况下,对芯片性能进行测试,仿真结果与测试结果吻合较好,验证了该接口模型建立的可行性。     

Analysis and circuit modeling of waveguide-separated absorption charge multiplication-avalanche photodetector (WG-SACM-APD)

Waveguide photodetectors are considered leading candidates to overcome the bandwidth efficiency tradeoff of conventional photodetectors. In this paper, a theoretical physics-based model of the waveguide separated absorption charge multiplication avalanche photodetector (WG-SACM-APD) is presented. Both time and frequency modeling for this photodetector are developed and simulated results for different thicknesses of the absorption and multiplication layers and for different areas of the photodetector are presented. These simulations provide guidelines for the design of these high-performance photodiodes. In addition, a circuit model of the photodetector is presented in which the photodetector is a lumped circuit element so that circuit simulation of the entire photoreceiver is now feasible. The parasitics of the photodetector are included in the circuit model and it is shown how these parasitics degrade the photodetectors performance and how they can be partially compensated by an external inductor in series with the load resistor. The results obtained from the circuit model of the WG-SACM-APD are compared with published experimental results and good agreement is obtained. This circuit modeling can easily be applied to any WG-APD structure. The gain-bandwidth characteristic of WG-SACM-APD is studied for different areas and thicknesses of both the absorption and the multiplication layers. The dependence of the performance of the photodetector on the dimensions, the material parameters and the multiplication gain are also investigated.     

Lateral photodetector operating in the fully reverse-biased mode

A one-dimensional model of a reverse-biased lateral photodetector is analyzed. The effect of background illumination is considered. An ac equivalent circuit for the device is derived. From this equivalent circuit the transient response is calculated and device parameters that determine its characteristics are presented.     

Silicon p-i-n photodetectors with integrated transistor amplifiers

A novel silicon photodetector is presented, incorporating transistor gain in a p-i-n photodiode and its performance is analyzed. Gain and noise power frequency characteristics are analytically derived in terms of an equivalent circuit. These analytical results are in good agreement with experimental results. Noise power is estimated and it is shown that, in the video frequency range, the S/N ratio is far superior to that of APD for relatively large signal levels. Detector operational features are described.     

高速长波长谐振腔增强型光探测器的瞬态性能研究

基于谐振腔增强型(RCE)光探测器的实际设计和制作模型,提出了综合器件的隔离层及器件的串联电阻、结电容等参数的高速长波长RCE光探测器的瞬态响应特性的表达式,包括器件的冲击响应、阶跃响应和脉冲响应.从理论上详细地研究了高速长波长RCE光探测器的瞬态响应特性,最后给出了不同器件结构参数的计算结果.     

A complete small-signal equivalent circuit model of cooled butterfly-type 2.5 Gbps DFB laser modules and its application to improve high frequency characteristics

A small-signal equivalent circuit model of 2.5 Gbps DFB laser modules with butterfly-type dual-in-line packages has been proposed and verified using extracted parameters. Parameters related to the equivalent circuit have been extracted from measured S parameters using the modified two-port black box model. This model includes small-signal equivalent circuits of components used for 2.5 Gbps DFB laser modules such as DFB laser, coplanar waveguides, matching resistor, bonding wires, and thermoelectric cooler (TEC). From this equivalent circuit modeling, we show that calculated frequency characteristics of DFB lasers on submount and complete DFB laser modules are similar to their measured frequency characteristics, respectively. Based on this equivalent circuit model, we propose and demonstrate a method that can improve frequency characteristics of 2.5 Gbps DFB laser modules through both experiments and simulations.     

六边形环复合吸波超材料性能的等效电路分析方法

该文提出一种针对六边形环复合吸波超材料吸波性能的等效电路分析方法。基于六边形环谐振特性建立了等效电路模型,通过对六边形点阵分布的傅里叶分析,提出了等效分布周期参数,给出了基于模型尺寸的RLC参数提取方法。与全波仿真结果比较,所提出的等效电路模型对分析多种尺寸的六边形环复合吸波材料具有较好的适用性和准确性。通过样品制作和测量,进一步验证了该模型的有效性,最后实现了一款工作于1.7～5.7 GHz的宽带雷达吸波材料。     

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be adequate up to 10 GHz for MOS transistors fabricated by a 20 GHz cutoff frequency technology. The extrinsic components and substrate coupling effects are properly included. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. A low-noise amplifier is used to illustrate the effects on circuit performance due to accurate inclusion of extrinsic components in the model. Good agreement between simulated results and measured data on high-frequency transistor characteristics has been achieved.     

Analysis of Millimeter Wave Varactor-Tuned Gunn Oscillator Stabilized with a Transmission Cavity

A novel circuit architecture which describes millimeter wave varactor-tuned Gunn oscillator stabilized with a transmission cavity has been proposed in this paper. A corresponding equivalent circuit model has been presented in order to study its performance characteristics. The circuit model consists of four parts which are varactor cavity, main cavity, transmission waveguide and transmission cavity. Based upon this model, electrical tuning characteristics have been studied at first. Mode jumping problems during electrical tuning process have been analyzed qualitatively. Moreover, quality factor and efficiency of the circuit model have been derived by virtue of relevant circuit parameters. The effects of some important circuit parameters affecting circuit performance parameters have been discussed. The circuit model can describe the circuit architecture accurately and effectively. This circuit architecture, which can generate signals exhibiting low frequency modulation noise, high frequency stabilization and electrical tunable characteristics, is applicable to various practical situations.