低杂散锁相环中的电荷泵设计

用TSMC0.18μm CMOS工艺设计并实现了一种电荷泵电路，传统的电荷泵电路中充放电电流有较大的电流失配,电流失配导致相位偏差,从而引起杂散并降低了锁相环的锁定范围，文中采用与电源无关的基准电流源电路,运用运算放大器和自偏置高摆幅共源共栅电流镜电路实现了充放电电流的高度匹配,从而降低了杂散。测试结果表明：电源电压1.8V时,电荷泵电流为0.475mA,在0.3-1.6V输出电压范围内电流失配小于10mA,功耗为6.8mW。     

锁相环频率合成器中的电荷泵设计

用TSMC 0.18μm CMOS工艺设计了一种电荷泵电路。传统的电荷泵电路中充放电电流有较大的电流失配,文章采用与电源无关的基准电流源电路,运用运算放大器和自偏置高摆幅共源共栅电流镜电路实现了充放电电流的高度匹配。仿真结果表明:电源电压1.8V时,电荷泵电流为0.5mA;在0.3V～1.6V输出电压范围内电流失配小于1μA,功耗为6.8mW。     

3 GHz低杂散锁相环中的低失配电荷泵

基于SMIC 40 nm CMOS工艺,提出了一种改进型电荷泵电路。在传统电荷泵锁相环中,电荷泵存在较大的电流失配,导致锁相环产生参考杂散,使锁相环输出噪声性能恶化。设计的电荷泵电路在电流源处引入反馈,降低了电流失配。仿真结果表明,在供电电压为1.1 V,电荷泵充放电电流为0.1 mA,输出电压在0.3~0.7 V范围变化时,电荷泵的电流失配率小于0.83 %,锁相环的输出参考杂散为-65.5 dBc。     

低杂散锁相环中鉴频鉴相器与电荷泵的设计

采用TSMC 0.18 μm 混合CMOS工艺,设计了一种应用在1.571 GHz GNSS接收机中低杂散锁相环的鉴频鉴相器与电荷泵电路。鉴频鉴相器采用两相非重叠时钟结构和延时可控电路,实现了鉴频鉴相器的延时失配最小化和导通时间可调,在降低杂散的同时消除死区。电荷泵采用4路控制信号和1路可控充电和放电电路,有效地优化了电流失配和电荷泵电流的大小,进一步降低锁相环的杂散。测试结果表明,在电源电压为1.8 V,电荷泵电流为100 μA 时,延时失配和充放电电流失配近似为0,杂散为－71.77 dBc@16.375 MHz。     

一种应用于锁相环的增益提高型电荷泵设计

采用0.18μm 1.8V CMOS工艺设计一种增益提高型电荷泵电路,利用增益提高技术和折叠式共源共栅电路实现充放电电流的匹配.该电荷泵结构可以很大程度地减小沟道长度调制效应的影响,使充放电电流在宽输出电压范围内实现精确匹配,同时具有结构简单的优点.仿真结果表明,电源电压1.8V时,电荷泵电流为600μA,在0.3～1.6V输出范围内电流失配为0.6μA,功耗为3mW.     

低杂散锁相环中电荷泵的设计

采用IBM 0.18 μm CMOS工艺,设计了一款应用于433 MHz ASK接收机中低杂散锁相环的电荷泵电路.设计采用与电源无关的带隙基准偏置电流源和运算放大器,实现了电荷泵充放电电流源的精确匹配,有效抑制了传统电荷泵对锁相环锁定状态中杂散信号的影响.电路在Cadence的Spectre工具下进行仿真,结果表明:当电源电压为1.8 V、参考电流为30 μA、输出电压范围在0.5～1.5 V时,充放电电流精确匹配,杂散小于-80 dB,其性能符合接收机系统要求.     

一种宽动态范围低失配的电荷泵

采用TSMC 0.18 μm混合CMOS工艺,设计了一种应用在GNSS接收机中低杂散锁相环(PLL)的宽动态范围低失配电荷泵。分析了电荷泵非理想因素和压控振荡器(VCO)调谐增益对参考杂散的影响,发现提高电荷泵电流匹配精度和减小VCO调谐增益均可有效抑制锁相环的参考杂散。采用加负反馈的源极开关型电荷泵,以实现电荷泵充放电电流的精确匹配。利用电荷泵输出电压来控制运算放大器的不同输出支路,以拓宽电荷泵的输出电压动态范围,从而降低PLL输出频率范围对VCO调谐增益的要求。仿真结果表明,当电源电压为1.8 V、电荷泵电流为100 μA时,可以实现充放电电流精确匹配,输出电压范围达到0.02~1.78 V,参考杂散为-66.3 dBc。     

应用于30 GHz锁相环的高性能电荷泵设计

基于IBM 0.13 μm CMOS工艺,设计了一款应用于30 GHz低杂散锁相环的电荷泵电路。该电荷泵采用带隙基准为电流源和运算放大器提供偏置,采用复制支路和比较器实现上下电流源的静态匹配,将输入输出轨对轨运算放大器接成单位增益缓冲器来避免电荷共享效应,通过加入互补开关管来减小时钟馈通和电荷注入效应。后仿真结果表明,在电源电压为2.5 V,电荷泵电流为200 μA,调谐范围为0.5~2 V时,充放电电流的最大静态失配小于0.1%;在750 kHz环路带宽下,计算得到锁相环参考杂散小于-72 dBc,满足IEEE 802.15.3c标准对60 GHz本振信号杂散的要求。     

一种大电压输出摆幅低电流失配电荷泵的设计

在分析了基本锁相环电荷泵工作机制的基础上,提出一种新型的电荷泵结构,该电荷泵在非常宽的电压范围内具有很低的电流失配,解决了传统电荷泵结构所具有的电荷注入、时钟馈通和电荷共享等问题,并且非常容易实现电荷泵充放电电流的数字控制.基于SMIC 0.18 μm CMOSRF工艺库设计的实际电路,使用Cadence工具仿真结果表明,在电源电压2.0 V时,输出电压为0.3～1.63 V,充放电电流最大失配率小于0.1%,电流绝对值偏移率小于0.6%,说明这种新型电荷泵结构具有良好的性能.     

一种-62.3 dBc参考杂散6 GHz低功耗锁相环

采用高匹配电荷泵电路和高精度自动频率校准(AFC)电路,设计了一种低功耗低参考杂散电荷泵锁相环。锁相环包括D触发鉴频鉴相器、5 bit数字可编程调频LC压控振荡器(VCO)、16～400可编程分频器和AFC模块。采用高匹配电荷泵,通过增大电流镜输出阻抗的方法,减少电荷泵充放电失配。同时,AFC电路采用频段预选快速搜索方法,实现了低压控增益LC VCO精确频带锁定,扩展了振荡频率范围,且保持了较低的锁相环输出参考杂散。锁相环基于40 nm CMOS工艺设计,电源电压为1.1 V。仿真结果表明,电压匹配范围为0.19～0.88 V,振荡频率范围为5.9～6.4 GHz,功率小于6.5 mW@6 GHz,最大电流失配小于0.2%@75μA;当输出信号频率为6 GHz时,输出相位噪声为-113.3 dBc/Hz@1 MHz,参考杂散为-62.3 dBc。     

Reduction of pump current mismatch in charge-pump PLL

A charge pump that minimises the mismatch between the charging and discharging currents and keeps the currents constant across a wide output voltage range is described. The improved current matching helps reduce the static phase offset and reference spur of a chargepump phase-locked loop (PLL) and the constant currents help control the PLL dynamics precisely. The proposed charge pump with dual compensation circuits demonstrates current mismatch of less than 3.2% and pump-current variation of 1.7% over the output voltage ranging from 0.2 to 1.0 V in the 0.13 μm CMOS process with 1.2 V supply.     

Phase-locked loop design with fast-digital-calibration charge pump

A fast-digital-calibration technique is proposed for reducing current mismatch in the charge pump (CP) of a phase-locked loop (PLL). The current mismatch in the CP generates fluctuations, which is transferred to the input of voltage-controlled oscillator (VCO). Therefore, the current mismatch increases the reference spur in the PLL. Improving current match of CP will reduce the reference spur and decrease the static phase offset of PLLs. Moreover, the settling time, ripple and power consumption of the PLL are also improved by the proposed technique. This study evaluated a 2.27–2.88 GHz frequency synthesiser fabricated in TSMC 0.18 μm CMOS 1.8 V process. The tuning range of proposed VCO is about 26%. By using the fast-digital-calibration technique, current mismatch is reduced to lower than 0.97%, and the operation range of the proposed CP is between 0.2 and 1.6 V. The proposed PLL has a total power consumption of 22.57 mW and a settling time of 10 μs or less.     

高性能集成锁相环中低失配电荷泵的设计

在分析电荷泵结构、工作原理和产生杂散机理的基础上,该文提出了一种低静态电流失配、低时序失配的高性能电荷泵。此电荷泵通过减小电荷泵开关过程中时序失配和电流失配,减小了高频锁相环中的抖动和杂散。基于中芯国际0.18 m CMOS射频工艺技术和1.8 V电源电压,对采用此高性能电荷泵的锁相环进行了相位噪声仿真。仿真结果验证了这些锁相环具有低噪声特性：在480 MHz的输出频率下,二阶锁相环的周期抖动为1.05 ps,最大参考杂散为-121 dBc。     

Charge pump with perfect current matching characteristics inphase-locked loops

Conventional CMOS charge pump circuits have some current mismatching characteristics. The current mismatch of the charge pump in the PLLs generates a phase offset, which increases spurs in the PLL output signals. In particular, it reduces the locking range in wide range PLLs with a dual loop scheme. A new charge pump circuit with perfect current matching characteristics is proposed. By using an error amplifier and reference current sources, one can achieve a charge pump with good current matching characteristics. It shows nearly perfect current matching characteristics over the whole VCO input range, and the amount of the reference spur is <-75 dBc in the PLL output signal. The charge pump circuit is implemented in a 0.25 μm CMOS process     

A 1 V CMOS programmable accurate charge pump with wide output voltage range

A 1 V, programmable, accurate, high speed, single-ended charge pump is proposed, suitable for low voltage PLLs. It is designed in TSMC 90-nm digital CMOS process and it consists of four switches in a current steering configuration, a unity gain rail to rail buffer for the charge sharing effect elimination, one more rail to rail amplifier for minimizing the DC current mismatch, a programmable current bias circuitry and two drivers based on the standard cell XOR gates specific configuration for achieving good synchronization between all charge pump input pulses at the PLL lock state. Replica biasing technique is applied to all charge pump switches. Current glitches and charge mismatch are suppressed by employing a mechanism with additional switches at the output. It exhibits a maximum DC current mismatch of 1% and charge mismatch of 6% over a wide output voltage range of 0.7 V for the entire range of output currents. The wide range of the output voltage remains relatively constant and independent of the selected charge pump current amplitude. This is attained by applying appropriate variation of the W/L ratios of the bias cascode current sources via the employment of additional programmable switches such that their saturation voltages remain relatively constant, something which in turn enables the output currents range to be as wide as it is required.     

Gain-Boosting Charge Pump for Current Matching in Phase-Locked Loop

The charge pump (CP) circuit is a key element in a phase-locked loop (PLL). Its function is to transform the Up and Down signals from the phase/frequency detector into current. In CMOS CPs, which have Up and Down switches made of p-channel MOS and n-channel MOS, respectively, a current mismatch occurs when dumping the charge to the loop filter. This current mismatch of the CP in the PLL generates fluctuations in the voltage-controlled-oscillator input and subsequently, a large phase noise on the PLL output signals. In this brief, a new CP with good current matching characteristics is proposed. By using a simple gain-boosting circuit, good current matching characteristics can be achieved with less than 0.1% difference of the Up/Down current over the CP output voltage ranges of 0.8-2.2 V and 0.5-1.2 V on 0.35-mum 3.3-V and 0.18-mum 1.8-V CMOS processes, respectively. The proposed CP circuit is simulated and verified by HSPICE with 0.35-mum 3.3-V and 0.18-mum 1.8-V CMOS parameters     

Design and Analysis of an Ultrahigh-Speed Glitch-Free Fully Differential Charge Pump With Minimum Output Current Variation and Accurate Matching

An ultrahigh-speed fully differential charge pump with minimum current mismatch and variation is proposed in this brief. A mismatch suppression circuit is employed to minimize the mismatch between the charging and discharging currents, which minimizes the steady-state phase error in a phase-locked loop (PLL). A variation suppression circuit is proposed to minimize output current variation with the change of output voltage, which reduces the variation of the bandwidth in a PLL. Techniques are proposed to suppress both low-speed glitches and high-speed glitches in the output current to allow glitch-free operation of the charge pump with ultrafast input pulses. The differential charge pump is designed and simulated under the power supply of 3.3 V in TSMC 0.35-$mu$m CMOS technology to verify the effectiveness of the proposed techniques.