共查询到18条相似文献,搜索用时 203 毫秒
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利用分子束外延技术研制出InP基IhAs/In0.53Ga0.47As/AlAs共振隧穿二极管,其中势垒为10个单分子AlAs,势阱由8个单分子层In0.53Ga0.47As阱和4个单分子层InAs子阱组成.室温下峰值电流密度接近3kA/cm2,峰和谷的电流密度比率达到19. 相似文献
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研究了离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和 Ga In NAs/ Ga As量子阱的影响 .研究表明离子损伤是影响 Ga NAs和 Ga In NAs量子阱质量的关键因素 .去离子磁场能有效地去除了等离子体活化产生的氮离子 .对于使用去离子磁场生长的 Ga NAs和 Ga In NAs量子阱样品 ,X射线衍射测量和 PL 谱测量都表明样品的质量被显著地提高 .Ga In As量子阱的 PL 强度已经提高到可以和同样条件下生长的 Ga In As量子阱相比较 .研究也表明使用的磁场强度越强 ,样品的光学质量提高越明显 相似文献
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通过衬底剥离技术对以重掺N型磷化铟(N+-InP)衬底生长的In0.53Ga0.47As外延层的迁移率测量方法进行了研究。首先,采用环氧树脂胶将In0.53Ga0.47As外延层粘贴在半绝缘蓝宝石衬底上,以盐酸溶液腐蚀掉InP衬底;之后,采用扫描电子显微镜能谱及金相显微镜对InP衬底的剥离情况及In0.53Ga0.47As薄膜的损伤情况进行了检测;最后采用范德堡法对粘贴在半绝缘蓝宝石衬底上的In0.53Ga0.47As薄膜的迁移率进行了测量。通过对比试验得出,剥离InP衬底的In0.53Ga0.47As薄膜的迁移率测量结果与理论值符合较好,与真值偏差在20%以内。 相似文献
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Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications 总被引:2,自引:2,他引:0
在InP衬底上采用感应耦合等离子体刻蚀技术制备了高性能的AlAs/In0.53Ga0.47As/InAs共振隧穿二极管.正向偏压下PVCR=7.57,Jp=39.08kA/cm2;反向偏压下PVCR=7.93,Jp=34.56kA/cm2.在未去除测试电极和引线等寄生参数影响下,面积为5μm×5μm的RTD的阻性截止频率为18.75GHz.最后对非对称的I-V特性进行了分析讨论. 相似文献
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Han Chunlin Chen Chen Zou Penghui Zhang Yang Zeng Yiping Xue Fangshi Gao Jianfeng Zhang Zheng Geng Tao 《半导体学报》2009,30(6)
We have fabricated Ino.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. 相似文献
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Nine-state resonant tunneling diode memory 总被引:1,自引:0,他引:1
The authors demonstrate an epitaxial series combination of eight pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy on InP. This series RTD produces an eight-peak multiple negative differential resistance characteristic with a peak-to-valley current ratio (PVR) exceeding 2 per peak at a peak current density of approximately 6 kA/cm 2. Hysteresis in the current-voltage characteristic is reduced by uniformly Si doping the double-barrier resonant tunneling region at a density of 5×1016 cm-3. Using this multiple-peak RTD in series with a field-effect transistor load, a nine-state multivalued memory circuit is demonstrated 相似文献
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Evers N. Vendier O. Chun C. Murti M.R. Laskar J. Jokerst N.M. Moise T.S. Kao Y.-C. 《Electron Device Letters, IEEE》1996,17(9):443-445
We report high peak-to-valley current ratio (PVR) resonant tunneling diodes (RTDs) bonded to silicon. Pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diode structures grown on semi-insulating InP with peak-to-valley current ratios as high as 30 at 300 K have been separated from the growth substrate and bonded to silicon substrates coated with Si3N 4, forming thin film devices. In addition, thin film multiple stack RTD structures have been bonded to silicon substrates. The I-V characteristics of both the single and multi-stacked thin film RTD's exhibit no signs of degradation after bonding to the host substrate. These results are the first successful demonstration of InP based electronics bonded to a silicon host substrate and enable the integration of RTDs with conventional silicon circuitry 相似文献
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Data are presented on single quantum barrier AlAs/In/sub 0.53/Ga/sub 0.47/As varactor diodes intended as submillimetre wavelength frequency multipliers that exhibit extremely high breakdown voltage and excellent capacitance modulation characteristics. Record breakdown voltages as high as 12 V were achieved with a composite 50AA/50AA/50AA thick In/sub 0.52/Al/sub 0.48//AlAs/In/sub 0.52/Al/sub 0.48/As barrier sandwiched between 3000 AA(1.2*10/sup 17/ cm/sup -3/) In/sub 0.53/Ga/sub 0.47/As depletion regions.<> 相似文献
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Kyono C.S. Binari S.C. Kruppa W. Ikossi-Anastasiou K. Hier H.S. 《Electronics letters》1992,28(15):1388-1390
A seven monolayer AlAs layer was used as an etch stop at the emitter-base heterojunction of an Npn In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HBT. The etch-stop HBTs displayed higher DC gain and similar microwave performance when compared to devices without the AlAs layer.<> 相似文献