静电感应晶体管大电流特性的改善

描述了改善静电感应晶体管(SIT)大电流特性的新方法. 首次定义了从不同角度表征SIT电特性的重要因子,如单位沟道宽度跨导、栅效率、灵敏度因子和本征静电增益. 从理论和工艺实践上研究了这些因子与几何结构之间的关系,揭示了器件电性能对几何结构和工艺参数的依赖关系. 设计建立了SIT频率参数和功率参数测试方法和电路,深入讨论了封装工艺对SIT电性能的影响.     

槽栅结构静电感应晶体管

本文介绍了一种利用简单挖槽实现栅源立体结构的静电感应晶体管。对照覆盖栅SIT进行了结构分析。概述了共源组态、输出功率3W的槽栅SIT的设计与研制。此结构易于提高版图横向密度,工艺简化,器件的电性能优良,是制造微波低电压SIT的有效途径之一。     

纳米结构器件材料结构参数的新测试方法

使用Monte Carlo模拟方法和器件振荡特性测试研究了异质谷间转移电子器件的直流隧穿特性和射频振荡性能与器件结构参数之间的关系.理论计算结果与实验数据间吻合得很好.在此基础上提出了通过电性能测试来分析器件结构参数的新方法.使用逐层化学腐蚀C-V测试测定了有源层的掺杂分布.通过低场电阻测量确定了量子阱的宽度.最后从器件振荡特性与Monte Carlo模拟曲线的对照中得出了掺杂接口的浓度.由此建立了器件结构参数的一套完整的测试分析方法.使用这套测试监控方法,已成功地研制出MBE和MOCVD工艺的高效、大功率振荡器件.     

具有混合I- V特性的静电感应晶体管的电性能

研究了具有混合型I- V特性的静电感应晶体管,提出了实现混合I- V特性所必需的器件结构参数、材料参数和工艺参数之间的最佳匹配关系.工艺实践表明沟道尺寸在确定器件特性是混合型、类三极管型还是类五极管型方面有着重要作用.讨论了静电感应晶体管性能控制的一般原则、方法和制造参数的控制判据以及控制因子β的作用.研究结果对静电感应晶体管的设计和制造,特别对具有混合型I- V特性的静电感应晶体管有实用价值.     

具有混合I-V特性的静电感应晶体管的电性能

研究了具有混合型I-V特性的静电感应晶体管,提出了实现混合I-V特性所必需的器件结构参数、材料参数和工艺参数之间的最佳匹配关系.工艺实践表明沟道尺寸在确定器件特性是混合型、类三极管型还是类五极管型方面有着重要作用.讨论了静电感应晶体管性能控制的一般原则、方法和制造参数的控制判据以及控制因子β的作用.研究结果对静电感应晶体管的设计和制造,特别对具有混合型I-V特性的静电感应晶体管有实用价值.     

Improvements on the Voltage Resistant Capability and Ⅰ-Ⅴ Characteristics of Static Induction Transistor with Buried Gate Structure

静电感应晶体管(SIT)有源区外围边界各种寄生电流的存在,不仅造成了阻断态下漏电增大,导致Ⅰ-Ⅴ特性异常,造成器件性能劣化,并且降低了器件的成品率.在器件有源区周围设计了保护沟槽,形成了槽台结构的孤岛,从物理上有效地切断了可能的寄生电流,改善了器件的耐压能力,优化了Ⅰ-Ⅴ特性.槽台结构通过对表面的台面造型来控制表面电场,能有效提高器件的击穿电压,改善器件电性能.     

型面周期性误差对环形桁架可展开天线 电性能的影响及其消除方法

环形桁架可展开天线的型面由一系列面片拼合而成,其电性能由这些面片的大小和形状决定.本文针对环形可展开天线型面周期性几何逼近误差导致天线远场方向图存在电平较高的栅瓣的问题,提出了通过破坏误差周期性来消除其对电性能影响的方法.首先,分析了型面几何逼近误差的周期性及其对天线电性能的影响;其次,提出两种消除型面几何逼近误差周期性的方法,一是在径向引入破坏因子,二是改变型面环向轮廓形状;最后,建立优化模型,求出同时满足用户电性能和结构要求的网面分环数和破坏因子.数值仿真表明本文提出的型面优化设计方法既能在保证天线增益的条件下消除栅瓣,又不导致天线结构过于复杂.     

GaAs MESFET平面型变容管高频特性分析

本文分析了用于GaAs MMIC调频器件MESFET平面型变容管的微波特性,讨论了器件几何结构与直流参数、S参数之间的关系.重点研究了器件串联电阻对微波特性的影响,给出了变容管变电容比与器件几何尺寸.     

基于结构误差的六边形相控阵天线电性能分析

相控阵天线(Phased Array Antenna,PAA)阵面加工、安装中产生的随机误差导致天线电性能的下降,严重制约高性能PAA的发展.通过考虑互耦参数,且将阵面存在的结构误差作为附加的相位因子引入到天线方向图函数中,建立了平面六边形PAA阵面结构误差与天线电性能之间的结构-电磁耦合模型,并仿真分析了考虑互耦时结构误差与天线电性能的定量关系,以及天线阵元个数变化时,阵元安装精度和阵面平面度对天线电性能的影响规律,为工程设计人员帝定天线结构方案与制造公差提供了重要参考.     

用虚拟制造设计低压功率VDMOS

采用虚拟制造方法设计了低压功率VDMOS器件,并对其进行结构参数、物理参数和电性能参数的模拟测试,确定了器件的物理结构.通过对这些参数和电学特性的分析,进一步优化设计,最终获得了满意的设计参数和性能.     

Improvements on high voltage performance of power static induction transistors

A novel structure for designing and fabricating a power static induction transistor (SIT) with excellent high breakdown voltage performance is presented. The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance, and to avoid the parallel-current effect in particular. Three ring-shape junctions (RSJ) are arranged around the gate junction to reduce the electric field intensity. It is important to achieve maximum gate-source breakdown voltage BVGS, gate-drain breakdown voltage BVGD and blocking voltage for high power application. A number of technological methods to increase BVgd and BVGs are presented. The BVGS of the power SIT has been increased to 110 V from a previous value of 50-60 V, and the performance of the power SIT has been greatly improved. The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum B VGS of the structure are also presented.     

用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SIT)特性

报告了用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SITs)交直流特性的结果.SIT的栅极长度为0.13μm,源极和漏极之间距离为0.5μm.模拟得到了SIT的输出特性,跨导和特征频率特性.模拟得到的跨导最大值为140ms/mm(Vgs=-1.5V),器件特征频率最大值为123GHz(I_ds=3.15A/cm).模拟结果表明纤锌矿相GaN SIT具有大功率和高频工作的潜力.     

SiC microwave power technologies

Two SiC transistors that are investigated for microwave power applications are the 4H-SiC static induction transistor (SIT) and the 4H-SiC metal-semiconductor field-effect transistor (MESFET). Ultrahigh frequency 4H-SiC SITs have demonstrated record-breaking pulsed power per package (900 W) with excellent associated power-added efficiency (PAE) of 78%. S band 4H-SiC MESFETs have shown a record power-density of 5.6 W/mm and 36% PAE, as well as 80 W continuous-wave (CW) power (1.6 W/mm), with an associated PAE of 38%. X-band MESFET power density of 4.3 W/mm was obtained for exploratory CW devices. These performance gains are afforded by the advantageous material properties of silicon carbide. SiC SIT technology offers many military system advantages including lower cost, lower weight, higher power and high temperature of operation and higher efficiency transmitters with minimal cooling requirements. SiC RF MESFET's and circuits are candidates for use in efficient linear transmitters for commercial and military communications.     

Modelling DC characteristics of static induction transistors

To analyse and design non-linear circuits using static induction transistors (SITs), a new empirical equation is presented to relate drain current to drain-source and gate-source voltages. The parameters of this equation can easily be obtained from the drain characteristics of the SIT. Using this equation, a closed-form expression can be obtained for the amplification factor of the SIT. Good agreement is obtained between the predicted and experimental results.     

微波高功率双介质栅静电感应晶体管

提出了用同步外延法设计和制造具有双介质层栅结构和非饱和电流电压特性的高频高功率静电感应晶体管的关键技术.讨论了寄生栅源电容Cgs对静电感应晶体管高频功率特性的影响.描述了工艺上减小寄生电容、改善静电感应晶体管高频功率性能的主要方法和措施.成功地制造出频率在400MHz时输出功率大于20W、功率增益大于7dB、漏效率大于70%和700MHz时输出功率大于7W、功率增益大于5dB,漏效率大于50%的高性能静电感应晶体管.     

电力静电感应晶体管大电压特性的改善

A novel structure for designing and fabricating a power static induction transistor（SIT）with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions（RSJ）are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented.     

GaN肖特基SIT的Monte Carlo模拟

用全带多粒子Monte Carlo模拟方法研究了GaN基肖特基势垒静电感应晶体管(SIT)的特性,给出了器件的电势、电场强度和电子浓度分布的Monte Carlo模拟结果。模拟得到的SIT输出特性曲线呈现非饱和特性,即类三极管特性。当VGS=0,VDS=35 V时,漏源电流为47 A/cm,跨导为300 mS/mm,电流截至频率为150 GHz。结果表明该器件具有大电流、高跨导和高频工作的潜力。     

New VVVF control-based high-frequency resonant inverters using static induction transistors

Voltage-fed high-frequency resonant inverters are proposed having a variable-voltage variable-frequency (VVVF) control function based on new circuit topologies called resonant voltage phasor controlled type and current phasor controlled type. The steady-state characteristics of the circuit topologies proposed are illustrated and the circuit design algorithm is described. A resonant voltage phasor controlled type high-frequency resonant inverter newly developed by using a static induction transistor (SIT) is applied as a 100-500 kHz induction-heating power supply. This paper thus refers to the results of an experiment including the optimum drive circuit of SITs.