通信对抗系统试验方法研究

为了探索更为合理的通信对抗系统靶场试验方法,论述了通信对抗系统复杂电磁环境适应能力试验方法,并对不同试验方法进行了简要比较,提出了利用演练电磁环境进行试验的方法。     

如何构建电子战靶场的复杂电磁环境

复杂电磁环境是现代电子战靶场最显著的特征,针对电子战靶场的特点,提出了复杂电磁环境系统的建设要求和总体设想,指出目前国内电子战靶场需要进一步完善的抗干扰效果评估、抗红外成像干扰试验、仿真试验和硬件在回路试验内容。     

电磁环境复杂度等级评估模型

综合考虑靶场复杂电磁环境适应性试验的特点和实际需求,研究了电磁环境复杂度等级分类和评估方法。首先分析了电子装备类型及电磁环境适应性特点。其次提出基于电子装备类型的电磁环境复杂度等级评定方法,即对于雷达类和通信类设备基于信噪比、侦察类设备基于信号脉冲流分别制定复杂电磁环境等级。第三考虑用频装备天线扫描,给出了电磁环境复杂度等级动态统计分析表达式。该研究可为电磁环境适应性试验和作战指挥研究提供重要支撑。     

电子信息靶场复杂电磁环境构设系统设计与实现

本文针对复杂电磁环境下电子装备试验的特点,首先提出了电子靶场复杂电磁环境构设系统构设电磁环境的思路,然后从系统实现的角度论述了系统的组成及设计方案,最后对环境构设评估采用的两种评价方法进行了描述。     

舰载通信信号侦察接收系统

在分析沿海地区复杂电磁环境构成因素的基础上,阐述了舰载通信信号侦察接收系统的技术体制、侦收方法及特点,探讨了舰载通信信号侦察接收系统为适应复杂电磁环境的解决措施,并在实际工程应用中证明改进措施能够很好地解决舰载通信信号侦察接收机的实际使用问题,保证其具有大侦收带宽、高灵敏度、大动态范围、强抗干扰能力.     

电波传播与天线

依据靶场电磁环境监测系统对测频接收机的设计指标要求,提出采用信道化测频接收机设计。解决测频接收系统的高截获概率、高灵敏度、大动态范围、高精度、高分辨力和复杂信号检测能力等设计难题。     

复杂电磁环境下航空通信效能试飞评估

根据复杂电磁环境下航空通信试飞要求,研究了航空通信效能试飞评估方法。在分析复杂电磁环境和通信效能评估的特点基础上,提出了复杂电磁环境的量化分级、通信效能试飞评估方法,实现了仿真、试验、试飞为一体的综合通信效能试飞评估,对航空通信系统在复杂电磁环境下通信效能量化评估具有参考价值。     

基于CPLD技术的枪械电磁扳机控制仪设计

针对目前靶场测试领域尤其是外弹道测试通常采用人工击发枪械的方式,存在安全性差、无法精确控制等问题,设计一种基于CPLD技术的枪械电磁扳机控制仪。采用步进电机作为执行单元,CPLD作为主控制器实现逻辑控制、通信功能。设计中着重考虑了电磁兼容及安全性,通过机械及电气两部分联锁确保控制仪无误触发。通过靶场试验,该控制仪能够适应靶场电磁环境,而且对其他仪器无干扰,其通信功能还可实现整体测试系统的同步性、自动化、网络化及远程控制。     

电子战复杂电磁环境模拟技术

概述了战场复杂电磁环境存在各种各样的电磁信号,简述了国内外研究现状,提出了电磁环境模拟关键技术、实现方式和实现手段,给出了部分模拟结果,建立了电子战复杂电磁环境模拟系统,并阐述了模拟子系统的功能,为军队的作战、训练和建设,以及装备的研制提供重要的技术支撑.     

复杂电磁环境下炮兵通信系统抗干扰方法

为了提高炮兵通信系统在复杂电磁环境下的抗干扰性能,首先分析了复杂电磁环境对炮兵通信系统的影响,然后介绍了跳频抗干扰技术的原理,并对跳频技术的抗干扰能力进行了分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.