1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability

This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI_C/dt of the IGBT. The new IGBTs with high turn-on dI_C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level     

1D Physical Non-Quasi Static BJT Circuit Model Based on the Equivalent Transmission Line Analysis

We describe a novel physically based non-quasi-static (NQS) bipolar junction transistor (BJT) model derived from theoretical analysis of the equivalent transmission line representing the one-dimensional minority carrier transport trough silicon quasi-neutral regions (QNRs). The NQS BJT model holds for arbitrarily doped BJTs operating at all injection levels. It also incorporates most important high-injection effects (Webster effect, Kirk effect, Early effect) and heavy-doping effects (position-dependant mobility, life-time, and band-gap narrowing). Novel NQS BJT model is compact since it allows the DC, AC and transient circuit analysis to be performed with single BJT model representation. In addition, it includes for the first time the influence of momentum relaxation time term appearing in DD equations. The advantages of the proposed NQS BJT model over the standard quasi-static Gummel-Poon model are demonstrated with simulations of Si BJT and SiGe HBT devices as well as with stability analysis of bipolar differential amplifier.     

1200V碳化硅MOSFET与硅IGBT器件特性对比性研究

搭建了输出特性测试电路、漏电流测试电路、双脉冲测试电路和Buck电路,对1 200 V SiC MOSFET和Si IGBT的输出特性、漏电流、开关特性和器件损耗进行了对比研究,分析了SiC MOSFET的主要优缺点。分析结果表明,SiC MOSFET在高温条件下依然拥有稳定的阻断能力;在同样的工作条件下,SiC MOSFET损耗更小,适合在高频率、大功率场合下使用;SiC MOSFET的跨导低,导通电阻大,所以门极驱动电压需要比较大的摆幅(-5/+20 V);由于开关速度很快,SiC MOSFET对线路杂散参数更加敏感。     

面向Si/SiC混合器件逆变器全寿命周期安全工作区的多开关模式主动切换策略

基于硅基绝缘栅双极型晶体管(Si IGBT)和碳化硅金属氧化物半导体场效应管(SiC MOSFET)的Si IGBT/SiC MOSFET混合器件采用多开关模式切换策略可使变换器具备应对复杂工况的能力,然而现有切换策略并未考虑器件疲劳老化对模式切换阈值电流的影响,在混合器件老化进程后期极有可能造成器件热失效,进而严重威胁变换器的可靠运行。基于此,提出了一种面向Si/SiC混合器件逆变器全寿命周期安全工作区的多开关模式主动切换策略。基于器件疲劳老化对逆变器最大安全运行电流的影响规律,设计了考虑老化进程的逆变器安全工作区刻画流程。根据安全工作区刻画结果,提出了适用于混合器件全寿命周期的多开关模式主动切换策略。实验结果表明,该策略能够针对混合器件不同老化程度来动态调整开关模式切换阈值电流,从而在器件全寿命周期内保障逆变器的运行可靠性。     

A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents results including a comparison with state-of-the-art silicon diodes. Switching losses for two silicon diodes (a fast diode, 600 V, 50 A, 60 ns Trr), an ultrafast silicon diode (600 V, 50 A, 23 ns Trr), and a 4H-SiC diode (600 V, 50 A) are compared. The effect of diode reverse recovery on the turn-on losses of a fast insulated gate bipolar transistor (IGBT) are studied both at room temperature and at 150 /spl deg/C. At room temperature, SiC diodes allow a reduction of IGBT turn-on losses by 25% compared to ultrafast silicon diodes and by 70% compared to fast silicon diodes. At 150 /spl deg/C junction temperature, SiC diodes allow turn-on loss reductions of 35% and 85% compared to ultrafast and fast silicon diodes, respectively. The silicon and SiC diodes are used in a boost converter with the IGBT to assess the overall effect of SiC diodes on the converter characteristics. Efficiency measurements at light load (100 W) and full load (500 W) are reported. Although SiC diodes exhibit very low switching losses, their high conduction losses due to the high forward drop dominate the overall losses, hence reducing the overall efficiency. Since this is an ongoing development, it is expected that future prototypes will have improved forward characteristics.     

Rated overload Characteristics of IGBTs for low-voltage and high-voltage devices

By a vertical shrink of the nonpunchthrough insulated gate bipolar transistor (NPT IGBT) to a structure with a thin n-base and a low-doped field stop layer a new IGBT can be realized with drastically reduced overall losses. In particular, the combination of the field stop concept with the trench transistor cell results in an almost ideal carrier concentration for a device with minimum on-state voltage and lowest switching losses. This concept has been developed for IGBTs and diodes from 600 V up to 6.5 kV. While the tradeoff behavior (on-state voltage V/sub CEsat/ or V/sub F/ to tail charge) and the overall ruggedness (short circuit, positive temperature coefficient in V/sub CEsat/, temperature independence in tail charge, etc.) is independent of voltage and current ratings the switching characteristics of the lower voltage parts (blocking voltage V/sub Br/<2 kV) is different in handling to the high-voltage transistors (V/sub Br/>2kV). With the HE-EMCON diode and the new field stop NPT IGBT up to 1700 V there is almost no limitation in the switching behavior, however, there are some considerations-a certain value in the external gate resistor has to be taken. High-voltage parts usually have lower current density compared to low-voltage transistors so that the "dynamic" electrical field strength is more critical in high-voltage diodes and IGBTs.     

Evaluation of modern power semiconductor devices and future trendsof converters

The author reviews the modern power semiconductor devices that appeared in the 1980s, i.e., the insulated gate bipolar transistor (IGBT), static induction transistor (SIT), static induction thyristor (SITH), and the recently introduced MOS-controlled thyristor (MCT). The characteristics of these devices are discussed and compared from the viewpoint of power electronics applications. Although the IBGT is well known, the power electronics community is somewhat unfamiliar with the latter three devices. For completeness, a brief review of other power devices, such as the thyristor, triac, gate turn-off thyristor (GTO), bipolar transistor (BJT), and power MOSFET is also incorporated. Future trends are outlined     

一种基于IGBT的快速双电源切换开关的研究

介绍了一种基于绝缘栅双极型晶体管(IGBT)的快速双电源切换开关,阐述了其工作原理、开关单元本体的结构及切换过程,利用Matlab软件搭建了仿真模型,研制了220V低压样机并进行了实验。仿真及实验结果表明,该切换开关具有快速性、暂态稳定性优点,实际切换时间在4ms之内,能够满足敏感和关键负载对供电可靠性、连续性的苛刻要求。     

不同碳化硅器件的直接比较

本文介绍了意法半导体公司(STMicroelectronics)首次提出的1200V/20A的SiC MOSFET,并与1200V常闭型SiC JFET(结型场效应晶体管)和1200V SiC BJT(双极结型晶体管)作对比。全面比较了3种开关器件工作在T=25℃、电流变化范围(1A~7A)的动态特性,并在T=125℃、ID=7A条件下做了快速评估。尽管SiC MOSFET的比通态电阻(Ron*A)很高,但与另外两种器件相比仍被认为是最有前景的开关器件:SiC MOSFET的总动态损耗远远低于SiC BJT和常闭型SiC JFET,且驱动方案非常简单。因此在高频、高效功率转换领域中,SiC MOSFET是最好的选择。     

Toward 99% efficiency for transistor inverters

Developments in power switching devices have been made toward reducing the conduction drop and improving the switching characteristics, in order to meet the demanding requirements for high efficiency. On the other hand, many efforts have been made to reduce the switching losses. Since bipolar junction transistors (BJTs) have the lowest on-state drops among those existing semiconductor switches with turn-off capability, BJTs are most suitable for realizing inverters of high efficiency at power levels under a few hundred kVA. However in the Darlington structure, there is higher on-state drop due to the driver transistors. It is therefore important to reduce the on-state drop in order to realize high efficiency with the Darlington transistors. In this article, two methods are proposed to greatly reduce their on-state drops. Firstly, a base drive circuit is presented that provides a direct drive to the output transistor of a Darlington transistor rather than through its driver transistors. To eliminate the disadvantage related to the direct base drive, an on-state drop cancellation method is then proposed, in which a DC voltage source is inserted in series with the driver transistor of a Darlington transistor to offset its on-state drop     

Si IGBT/SiC MOSFET混合器件及其应用研究

综述了Si IGBT/SiC MOSFET混合器件在门极优化控制策略、集成驱动设计、热电耦合损耗模型、芯片尺寸配比优化和混合功率模块研制等方面的最新研究成果与进展。Si IGBT/SiC MOSFET混合器件结合了SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力和低成本优势,已有文献的最新研究和实验结果验证了该类器件的优异特性,表明其对高性能电力电子器件实现更高电流容量、更高开关频率和较低成本具有重要意义,是高性能变换器应用中非常有潜力的功率器件类型。     

Controlling the ON-resistance in SOI LDMOS using parasitic bipolar junction transistor

We present a new parasitic bipolar junction transistor (BJT) enhanced silicon on insulator (SOI) laterally double diffused metal oxide semiconductor (LDMOS), called BJT enhanced LDMOS (BE-LDMOS). The proposed device utilizes the parasitic BJT present in an LDMOS to increase the drain current for a given gate voltage, resulting in a reduction in the ON-resistance by 26.2 % and improving the switching speed by 7.8 % for BE-LDMOS as compared to the comparable LDMOS. These improvements are without degradation in other performance parameters such as off state breakdown voltage and transconductance. The process steps for fabricating BE-LDMOS are same as that for LDMOS except for an additional metal contact.     

IGBT模块的新型开关模型与损耗分析

为解决绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）模块开关模型适用性差、拟合度低、开关损耗难以实时连续计算的问题,通过分析IGBT模块开关过程的动、静态特性,着重考虑器件结温和杂散参数等参考量对IGBT开关过程中的瞬时电压、电流波形的影响,基于曲线拟合理论,建立了IGBT模块的开关模型与损耗模型。所建立的开关模型通用性强,适用于相邻开关周期内开关管导通电流不相等的电路;损耗模型精确度高,能够实时累加计算电路的损耗数值。基于Matlab/Simulink环境对开关过程进行仿真并搭建了双重移相DC-DC实验样机进行验证,仿真与实验结果验证了所提出的开关模型及损耗模型的正确性和准确性。     

双极型静电感应晶体管的开关特性

根据双极型静电感应晶体管的通断特性，提出了开关特性的测试方法。测试和给出了GJ12D双极型静电感应晶体管的开关参数、曲线和反偏参数。将GJ12D与国外的双极型晶体管和功率场效应管进行了比较。     

Comparison of the Punch-Through and Non-Punch-Through IGT Structures

The insulated gate transistor (IGT) has been modeled as a wide-base bipolar junction transistor (BJT) driven by a MOSFET. Therefore, the vertical wide-base BJT structure influences the following IGT characteristics: 1) the forward current-voltage characteristics, 2) the fall time/forward-voltage drop trade-offs, 3) the high-temperature blocking, and 4) the turn-off current tail. An IGT with punch-through (PT) BJT yields lower forward voltage than that of an IGT with non-punch-through (NPT) BJT due to the thinner base of the PT BJT structure. The punch-through IGT has lower off-state (leakage) current and also shorter turn-off current tail due to lower current gain of a PT BJT than that of an NPT BJT. Both PT and NPT IGT's have large safe operation areas.     

无刷直流电机驱动用IGBT逆变器能耗分析

为了预测电机系统的性能和提高设计的可靠性.根据无刷直流电机(BLDCM)的PWM调制原理和IGBT的损耗机理.采用损耗分离法提出了BLDCM驱动用IGBT逆变器的功耗计算模型.逆变器的通态损耗是与IGBT正向通态压降、电机电流和开关占空比有关的函数,而其开关损耗足开关器件的肝关时间、电机电流、逆变器的供电电压以及调制频率的函数.对提出的损耗模型进行了仿真计算和实验验证,仿真计算结果与实验结果具有较好的一致性.     

1200V增强型碳化硅纵向结型场效应晶体管功率模块

最近的模块研发工作已经生产出封装在SP1模组中的快速开关,1200V、13mΩ、增强型SiC JFET半桥模块。这些模块由36mm~2 SiC VJFET和23mm~2肖特基管的并联组合而成。在I_D=100A条件下,获得2.7mΩ-cm~2的比导通电阻。开关测试采用了标准的双脉冲感性负载电路,在600V、100 A、温度分别为25℃和150℃的条件下,得到了历史最低的总开关损耗——100A、150℃下为1.25mJ。本文详细介绍测试的开关性能、所采用的栅极驱动电路,以及获得这些结果推荐使用的缓冲器。     

IGBT高频开关电源的故障分析及处理

IGBT高频开关电源以其一系列优点,一经问世就在整个电镀行业得到了广泛应用.但该电源的缺点是IGBT模块容易损坏,目前的一些IGBT保护方案仅停留在理论阶段.针对一家电镀企业的大功率高频开关电源屡损IGBT进行了长期跟踪调查.通过对IGBT高频开关电源的主板DC/AC电路和驱动电路的深入研究,进行了故障排查及处理.     

Failure dynamics of the IGBT during turn-off for unclampedinductive loading conditions

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations     

场终止型绝缘栅双极型晶体管的开关瞬态模型

新一代场终止型（field stop,FS）绝缘栅双极型晶体管（insulated gate bipolar transistor,IGBT）的仿真模型目前都是采用传统穿通型（punch through,PT）IGBT的建模方法,由于FS结构与PT结构在厚度、掺杂浓度等方面都存在很大的不同,不可避免的会存在较大的偏差。在对已有PT模型进行理论分析和公式推导的基础上,根据FS型IGBT的结构特点和工作机制,在场终止层内采用了大注入的假设条件,同时考虑基区内载流子的复合作用,提出了一种改进的FS型开关瞬态模型。通过2种模型仿真波形与实测波形的比较,验证了该模型具有更高的准确性。