Organic light-emitting devices based on new rare earth complex Tb（p-CIBA）3phen

A new rare earth complex Tb（p-CIBA）3phen was synthesized and introduced into organic tight emitting devices （OLEDs） as emitting material. The Tb（p-CIBA）3phen was doped into PVK to improve the filmforming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device： ITO/PVK： Tb （p-CIBA） 3 phen /LiF/Al; double-layer device： ITO/PVK： Tb（p-CIBA）3phen/AIQ/LiF/AI. The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained,and only the green emission was observed from the electroluminescence. The full width at half maximum （FWHM） was less than 10 nm. The highest EL brighthess of the single-layer device is 25.4 cd/cm^2 at a fixed bias of 18 V,and the highest EL brightness of the double-layer device reaches 234.8 cd/cm^2 at a voltage of 20 V.     

High performance blue organic light-emitting devices fabricated by using the doped AIq3 in NPB hole transmistion layers

We have designed a new structure blue emission device with doped Alq3 of 3% in hole transmission layers of NPB. The CIE coordination of the devices is （0.17,0.19）. The maximum electroluminescence efficiency is 4.1 cd/A at 11 V, the brightness is 118.8 cd/m^2 at 7 V, and the maximum brightness is 10770 cd/m^2 at 13 V.     

A new structure and its analytical breakdown model of high voltage SOI device with Step Unmovable Surface Charges of buried oxide layer

A new SOI （Silicon On Insulator） high voltage device with Step Unmovable Surface Charges （SUSC） of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson＇s equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF （REduce SURface Field） condition of the SOl device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3pro-thick top Si layer, 2pro-thick buried oxide layer and 70pro-length drift region using a linear doping profile of unmovable buried oxide charges.     

Analytic expression of the chirped sampled function used to produce the equal chirp in the specific reflection channel in uniform period fiber Bragg gratings

The general analytic expression of the chirped sampled function is derived based on coupled mode theory. This function can be used to describe how to use uniform period fiber Bragg grating to produce the equal chirp at will in the specific reflection channel. As an example,the exact sampled function expression that produces a linear chirped at the ＋ 4 channel is given. The simulation results by using the transfer-matrix show that the theory is correct.     

Narrow-channel-spacing 32-channel AWG multiplexer with an innovative alignment method

A 32-channel 50 GHz spaced arrayed-waveguide grating（AWG） with our innovative configuration has been designed and fabricated. The performance of the device has been fully tested by using a system that consists of a tunable laser light source （TLS）, an optical power meter and a polarization controller. The insertion loss （IS） of the device is 4.2-7.4 dB. The crosstalk is about - 28 dB. The IS uniformity is less than 3.3 dB. With our configuration,the performance of the device has been enhanced effectively and the difficulty in alignment process has been decreased obviously.     

Temperature characteristics of InGaAs/GaAs vertical cavity surface emitting laser

The temperature characteristics for the different lasing modes at 300 K of intracavity contacted InGaAs/GaAs Vertical Cavity Surface Emitting Lasers（VCSELs） have been investigated experimentally by using the SV-32 cryostat and LD200205 test system. In combination with the simulation results of the reflective spectrum and the gain peak at different temperatures, the measurement results have been analyzed. In addition, the dependence of device size on temperature characteristics is discussed. The experimental data can be used to optimally design of VCSEL at high or cryogenic temperature.     

High stable power control of a laser diode

For a high precise sensing and measuring system,theerror of measurement resulting fromthe fluctuation ofthe light source must be considered[1-3].The main noisesources include fluctuation of current source,self-heat ,aging and theintrinsic noises of a lase…     

Silica-based 71-channel arrayed waveguide grating

With the rapid increase of global information capaci-ty,all optical wavelength division multiplexing(WDM)networks are very attractive because they are capable ofprocessing broadband optical signals without convertingthem to electronic signals.Large channe…     

Design of photonic crystal fibers with anomalous dispersion

Photonic crystal fibers (PCFs) have attracted greatattentionin recent years due to their interesting proper-ties ,such as endless single-mode operation,unique dis-persion and nonlinear characteristics[1 ,2].It has been re-ported that PCFs offer a wide range of potential applica-tions ,such as 2Rregenerators ,optical parametric ampli-fiers ,dispersioncompensationandsuper-continuumgen-eration[3].Also called holey fibers or microstructure fi-bers ,PCFs are optical fibers possessing periodic a…     

A 2× 2 SOI mach-zehnder thermo-optical switch based on strongly guided paired multimode interference couplers

A silicon-on-insulator 2× 2 Mach-Zehnder thermo-optical switch is developed based on strongly guided paired multimode interference couplers. The multimode-interference couplers were etched deeply for improving coupler characteristics such as self-imaging quality, uniformity and fabrication toierance. The proposed switch achieves good performances, including a low insertion loss of -11.0dB, a fiber-waveguide coupling loss of-4.3dB and a fast response speed measured to be 3.5 and 8.8 μs for raise and fall switching time, respectively.     

High power output quasi-continuous-wave nanosecond optical parametric generator based on periodically poled lithium niobate

We report on a high power output quasi-continuous-wave nanosecond optical parametric generator （OPG） of congruent periodically poled lithium niobate （PPLN） pumped by a 1 064 nm acousto-optically Q-switched Nd-YVO4 laser （duration. 70 ns,repetition rate：45 kHz,spatial beam quality M2〈 1,3）. The OPG consists of a 38.7 mm long PPLN crystal with a domain period of 28.93 μm. With 5.43 W of average pump power the maximum average output power is 991 mW at 1 517.1 nm signal wave of the PPLN OPG.     

Analysis of electro-optic switches with series-coupled multiple microring resonators

In terms of the coupled mode theory, microring resonance and electro-optic modulation princeple, a reasonable project is proposed for designing an electro-optic switch with the series-coupled multiple microring resonators. The simulation and optimization are performed at the resonant wavelength of 1550 nm. The results are as follows: the core size of the microring is 1.6 μm×1.6 μm, the confined layer between the core and the electrode is 1.6 μm, the thickness of the electrode is 0.15 μm, the radius of the m...     

Flat-top silica-based arrayed waveguide grating with 40-channels

A wavelength multiplexer or demultiplexer plays ani mportant role in all wavelength division multiplexing( WDM) system.Silica-basedarrayed waveguide gratings(AWGs) offer attractive featuresinthis area due to theadvantage of large output channels and lowlo…     

Channel Arrangement for optical communication subsystems with 12 parallel channels

This paper devoted to report the design and the achievement of an optical communication subsystem with 12 parallel channels in one chip. The system is capable of,transmitting 10 Gbps bidirectional date over hundreds of meters. It can provide error detection and correction by using 8B/10B encoding and Cyclical Redundancy Checking （CRC） encoding when only single-channel fails. The design scheme has already passed the simulation in FPGA. This technique is useful to enhance the capability and the reliability of the very short reach （VSR） transmission systems.     

A low voltage CMOS RF front-end for IEEE 802.11b WLAN transceiver

A low voltage CMOS RF front-end for IEEE 802.11b WLAN transceiver is presented. The problems to implement the low voltage design and the on-chip input/output impedance matching are considered, and some improved circuits are presented to overcome the problems. Especially, a single-end input, differential output double balanced mixer with an on-chip bias loop is analyzed in detail to show its advantages over other mixers. The transceiver RF front-end has been implemented in 0.18 um CMOS process, the measured results show that the Rx front-end achieves 5.23 dB noise figure, 12.7 dB power gain (50 ohm load), −18 dBm input 1 dB compression point (ICP) and −7 dBm IIP3, and the Tx front-end could output +2.1 dBm power into 50 ohm load with 23.8 dB power gain. The transceiver RF front-end draws 13.6 mA current from a supply voltage of 1.8 V in receive mode and 27.6 mA current in transmit mode. The transceiver RF front-end could satisfy the performance requirements of IEEE802.11b WLAN standard. Supported by the National Natural Science Foundation of China, No. 90407006 and No. 60475018.     

80nm FBG sensing interrogation system based on tilted FBG

An 800 nm band fiber Bragg grating sensing interrogation system using tilted FBG as the core wavelength division component is presented. A charge coupled device （CCD） linear array is put on the focal plane of the lens to detect the light. TFBG is used to tap light out of the fiber core to fiber cladding. The sensing wavelength is 795 to 830 nm, with accuracy of 20 pm and scan speed 100Hz. Using FBG sensor, we achieve the temperature sensitivity of 1.8 ℃ and strain sensitivity of 18 με.     

Improvement of normalized throughput in WDM ＋ OCDMA system using optical hard-limiters

Recently,because of advantages of high-speed opticalprocessing and si mple network control ,the optical codedivision multiple access (OCDMA) has become a hotscheme in LAN and access network[1-5]. According tothe spreading mode, OCDMAcan be mainly dividedi…     

Fabrication of flexible organic light-emitting diodes with Alq3 as emitting layer

Fabrication of flexible organic light-emitting diodes（FOLEDs） with ITO/PVK ：TPD/Alq3/Al configuration prepared on PET substrates is reported. Alq3 is used as the light-emitting material. The curves of the current density vs. voltage,optical current vs. voltage and quantum efficiency vs. current density of the devices are investigated. Compared the devices with the ones that have the same configuration and are fabricated under the same conditions but on glass substrates,the characteristics of the two kinds of devices are very similar except that the threshold voltage of the flexible FOLEDs is a little higher. Under the driving voltage of 20V,the corresponding brightness and the external quantum efficiency are 1000 cd/m^2 and 0. 27%, respectively. In addition, the anti-bend ability of the devices is tested and the reasons of failure of the devices are analyzed.     

Design and fabrication of sub-μs silicon-on-insulator thermo-optic 4×4 switch matrix

A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4x4 switch matrix with spot size converters （SSCs） and a new driving circuit are designed and fabricated. The introduction of a spot size converter （SSC） has decreased the insertion loss to less than 10dB and the new driving circuit has improved the response speed to less than l~s.     

P-μc-Si1-xGex ：H thin film by VHF-PECVD

In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium （p-μc-Si1-xGex：H） was deposited by very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films＇ composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1-xGex：H material with high conductivity, low activation energy （σ= 1.68 S/cm, E8=0.047 eV）, high crystalline volume fraction （60%） and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.