Interpretation of secondary electron images obtained using a low vacuum SEM

Charging of insulators in a variable pressure environment was investigated in the context of secondary electron (SE) image formation. Sample charging and ionized gas molecules present in a low vacuum specimen chamber can give rise to SE image contrast. "Charge-induced" SE contrast reflects lateral variations in the charge state of a sample caused by electron irradiation during and prior to image acquisition. This contrast corresponds to SE emission current alterations produced by sub-surface charge deposited by the electron beam. "Ion-induced" contrast results from spatial inhomogeneities in the extent of SE signal inhibition caused by ions in the gaseous environment of a low vacuum scanning electron microscope (SEM). The inhomogeneities are caused by ion focusing onto regions of a sample that correspond to local minima in the magnitude of the surface potential (generated by sub-surface trapped charge), or topographic asperities. The two types of contrast exhibit characteristic dependencies on microscope operating parameters such as scan speed, beam current, gas pressure, detector bias and working distance. These dependencies, explained in terms of the behavior of the gaseous environment and sample charging, can serve as a basis for a correct interpretation of SE images obtained using a low vacuum SEM.     

Electron and ion imaging of gland cells using the FIB/SEM system

The FIB/SEM system was satisfactorily used for scanning ion (SIM) and scanning electron microscopy (SEM) of gland epithelial cells of a terrestrial isopod Porcellio scaber (Isopoda, Crustacea). The interior of cells was exposed by site-specific in situ focused ion beam (FIB) milling. Scanning ion (SI) imaging was an adequate substitution for scanning electron (SE) imaging when charging rendered SE imaging impossible. No significant differences in resolution between the SI and SE images were observed. The contrast on both the SI and SE images is a topographic. The consequences of SI imaging are, among others, introduction of Ga⁺ ions on/into the samples and destruction of the imaged surface. These two characteristics of SI imaging can be used advantageously. Introduction of Ga⁺ ions onto the specimen neutralizes the charge effect in the subsequent SE imaging. In addition, the destructive nature of SI imaging can be used as a tool for the gradual removal of the exposed layer of the imaged surface, uncovering the structures lying beneath. Alternative SEM and SIM in combination with site-specific in situ FIB sample sectioning made it possible to image the submicrometre structures of gland epithelium cells with reproducibility, repeatability and in the same range of magnifications as in transmission electron microscopy (TEM). At the present state of technology, ultrastructural elements imaged by the FIB/SEM system cannot be directly identified by comparison with TEM images.     

Integration of a high‐NA light microscope in a scanning electron microscope

We present an integrated light‐electron microscope in which an inverted high‐NA objective lens is positioned inside a scanning electron microscope (SEM). The SEM objective lens and the light objective lens have a common axis and focal plane, allowing high‐resolution optical microscopy and scanning electron microscopy on the same area of a sample simultaneously. Components for light illumination and detection can be mounted outside the vacuum, enabling flexibility in the construction of the light microscope. The light objective lens can be positioned underneath the SEM objective lens during operation for sub‐10 μm alignment of the fields of view of the light and electron microscopes. We demonstrate in situ epifluorescence microscopy in the SEM with a numerical aperture of 1.4 using vacuum‐compatible immersion oil. For a 40‐nm‐diameter fluorescent polymer nanoparticle, an intensity profile with a FWHM of 380 nm is measured whereas the SEM performance is uncompromised. The integrated instrument may offer new possibilities for correlative light and electron microscopy in the life sciences as well as in physics and chemistry.     

Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope

The backscattered electron (BSE) signal in the scanning electron microscope (SEM) can be used in two different ways. The first is to give a BSE image from an area that is defined by the scanning of the electron beam (EB) over the surface of the specimen. The second is to use an array of small BSE detectors to give an electron backscattering pattern (EBSP) with crystallographic information from a single point. It is also possible to utilize the EBSP detector and computer-control system to give an image from an area on the specimen--for example, to show the orientations of the grains in a polycrystalline sample ("grain orientation imaging"). Some further possibilities based on some other ways for analyzing the output from an EBSP detector array, are described.     

Measurement technique for the incident electron current in secondary electron detectors and its application in scanning electron microscopes.

A measurement technique for incident electron current in secondary electron (SE) detectors, especially the Everhart-Thornley (ET) detector, based on signal-to-noise ratio (SNR), which uses the histogram of a digital scanning electron microscope (SEM) image, is described. In this technique, primary electrons are directly incident on the ET detector. This technique for measuring the correlation between incident electron current and SNR is applicable to the other SE detectors. This correlation was applied to estimate the efficiency of the ET detector itself, to evaluate SEM image quality, and to measure the geometric SE collection efficiency and the SE yield. It was found that the geometric SE collection efficiency at each of the upper and lower detectors of a Hitachi S-4500 SEM was greater than 0.78 at all working distances.     

Quantitative secondary electron energy filtering in a scanning electron microscope and its applications

Two-dimensional dopant mapping in the scanning electron microscope (SEM) has recently attracted attention due to its ability to measure dopant levels rapidly with high spatial resolution while requiring little or no sample preparation. The dopant concentration could be derived from the energy distribution of secondary electrons emitted per doped region. However, the lack of reliable quantification, when standard SEM imaging is used, has so far hindered a wide application of the technique. This paper aims to resolve this problem with quantitative energy-filtering using a through-the-lens (TTL) detector in a field emission gun SEM (FEG-SEM). We have used the linear shift obtained in the SE energy distribution with variable specimen bias using sample containing copper wires, defined as the experimental detector response R(exp), to quantify the energy filtering. Using different experimental conditions, values of (2.42+/-0.04)相似文献   

The trajectories of secondary electrons in the scanning electron microscope

Three-dimensional simulations of the trajectories of secondary electrons (SE) in the scanning electron microscope have been performed for plenty of real configurations of the specimen chamber, including all its basic components. The primary purpose was to evaluate the collection efficiency of the Everhart-Thornley detector of SE and to reveal fundamental rules for tailoring the set-ups in which efficient signal acquisition can be expected. Intuitive realizations about the easiness of attracting the SEs towards the biased front grid of the detector have shown themselves likely as false, and all grounded objects in the chamber have been proven to influence the spatial distribution of the signal-extracting field. The role of the magnetic field penetrating from inside the objective lens is shown to play an ambiguous role regarding possible support for the signal collection.     

SEM imaging of air-sensitive specimens

A device has been built that allows four air-sensitive specimens to be examined in a Philips 501 scanning electron microscope (SEM) without interrupting the vacuum. The specimens are mounted onto a revolving four-faceted stage in an inert atmosphere. The sealed device is then mounted onto the goniometer substage of the SEM and interfaced with the stage rotation drive. After the microscope reaches the operating vacuum condition, the device is opened by turning the stage rotation knob. The device can be viewed with the SEM image during this operation. The same mechanism which opens and closes the device also rotates the four-faceted sample mount to the desired specimen. The x and y translations of the SEM sub-stage are used to move the specimen in the imaging plane. The operation of this device was tested with polyolefin catalysts which are extremely air-sensitive. The main advantage of this device is that it allows air-sensitive specimens to be routinely examined without compromising the other uses of the SEM. Specimens mounted on this device can be viewed from 0 to ± 90° tilt. With a minor adaption, this device can be used to view the total 360° surface of a specimen in a manner similar to that described by Herrmann (1979).     

An optical configuration for fastidious STEM detector calibration and the effect of the objective‐lens pre‐field

In the scanning transmission electron microscope, an accurate knowledge of detector collection angles is paramount in order to quantify signals on an absolute scale. Here we present an optical configuration designed for the accurate measurement of collection angles for both image‐detectors and energy‐loss spectrometers. By deflecting a parallel electron beam, carefully calibrated using a diffraction pattern from a known material, we can directly observe the projection‐distortion in the post‐specimen lenses of probe‐corrected instruments, the 3‐fold caustic when an image‐corrector is fitted, and any misalignment of imaging detectors or spectrometer apertures. We also discuss for the first time, the effect that higher‐order aberrations in the objective‐lens pre‐field has on such an angle‐based detector mapping procedure.     

Imaging of specimens at optimized low and very low energies in scanning electron microscopes.

The modern trend towards low electron energies in scanning electron microscopy (SEM), characterised by lowering the acceleration voltages in low-voltage SEM (LVSEM) or by utilising a retarding-field optical element in low-energy SEM (LESEM), makes the energy range where new contrasts appear accessible. This range is further extended by a scanning low-energy electron microscope (SLEEM) fitted with a cathode lens that achieves nearly constant spatial resolution throughout the energy scale. This enables one to optimise freely the electron beam energy according to the given task. At low energies, there exist classes of image contrast that make particular specimen data visible most effectively or even exclusively within certain energy intervals or at certain energy values. Some contrasts are well understood and can presently be utilised for practical surface examinations, but others have not yet been reliably explained and therefore supplementary experiments are needed.     

Very low energy microscopy in commercial SEMs

Minimum necessary adaptations are described that are sufficient for obtaining very low energy electron micrographs (VLEEMs) from commercially available routine scanning electron micrographs (SEMs) with the electrons accelerated to an energy of the order of tens of keV. A cathode lens inserted into the specimen chamber enables one to decelerate electrons in front of the specimen surface to a desired low landing energy, which can be freely varied even down to zero. When a potential slightly more negative than the accelerating voltage is applied, a scanning mirror electron microscopy mode can be effected. The achievable point resolution at very low energies proves to be not too dependent on the objective lens parameters, so that the physical limit of aberrations of the homogeneous field of the cathode lens is nearly attainable. The detection efficiency for the standard Everhart-Thornley secondary electron detector is discussed, and results for the routine Tesla BS 340 SEM are presented.     

A high-resolution add-on in-lens attachment for scanning electron microscopes

A compact add-on objective lens for the scanning electron microscope (SEM) has been designed and tested. The lens is < 35 mm high and can be fitted on to the specimen stage as an easy-to-use attachment. Initial results show that it typically improves the spatial resolution of the SEM by a factor of three. The add-on unit is based upon a permanent magnet immersion lens design. Apart from the extra attachment to the specimen stage, the SEM with the add-on lens functions in the normal way. The in-lens unit can comfortably accommodate specimen heights up to 10 mm. The new add-on lens unit opens up the possibility of operating existing SEMs in the high-resolution in-lens mode. By using a deflector at the top of the add-on lens unit, it can also operate as a quantitative multichannel voltage contrast spectrometer, capable of recording the energy spectrum of the emitted secondary electrons. Initial experiments confirm that a significant amount of voltage contrast can be obtained.     

Imaging thin and thick sections of biological tissue with the secondary electron detector in a field-emission scanning electron microscope

A field-emission scanning electron microscope (FESEM) equipped with the standard secondary electron (SE) detector was used to image thin (70–90 nm) and thick (1–3 μm) sections of biological materials that were chemically fixed, dehydrated, and embedded in resin. The preparation procedures, as well as subsequent staining of the sections, were identical to those commonly used to prepare thin sections of biological material for observation with the transmission electron microscope (TEM). The results suggested that the heavy metals, namely, osmium, uranium, and lead, that were used for postfixation and staining of the tissue provided an adequate SE signal that enabled imaging of the cells and organelles present in the sections. The FESEM was also used to image sections of tissues that were selectively stained using cytochemical and immunocytochemical techniques. Furthermore, thick sections could also be imaged in the SE mode. Stereo pairs of thick sections were easily recorded and provided images that approached those normally associated with high-voltage TEM.     

Sharing of secondary electrons by in-lens and out-lens detector in low-voltage scanning electron microscope equipped with immersion lens

To understand secondary electron (SE) image formation with in-lens and out-lens detector in low-voltage scanning electron microscopy (LV-SEM), we have evaluated SE signals of an in-lens and an out-lens detector in LV-SEM. From the energy distribution spectra of SEs with various boosting voltages of the immersion lens system, we revealed that the electrostatic field of the immersion lens mainly collects electrons with energy lower than 40 eV, acting as a low-pass filter. This effect is also observed as a contrast change in LV-SEM images taken by in-lens and out-lens detectors.     

High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction

High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p⁺–n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p–n junctions with a resolution of about 20 nm.     

Elemental mapping with elastically scattered electrons

We describe a technique for efficient, quantitative, standardless elemental mapping using a high-angle annular detector in a scanning transmission electron microscope (STEM) to collect elastically scattered electrons. With a single crystal specimen, contrast due to thickness variations, diffraction, and channelling effects can be avoided, so that the resulting image contrast quantitatively reflects variations in impurity concentration. We compare a number of simple analytical approximations to the elastic scattering cross sections and show that a standardless analysis is possible over a wide range of atomic number and inner detector angle to an absolute accuracy of better than 20%.     

Electron optical property of a charged foil,observed with a transmitted electron detector device in an SEM

Experimental evidence is presented for the electron optical behaviour of a charged foil area, using the transmitted electron detection device of the scanning electron microscope JSM 50 A (JEOL). The primary electron beam scanning a thin pioloform foil on the one hand produces a charged foil region which on the other hand acts as an electron lens to the primary and scattered electrons. Scanning electron microscopical investigations of air particulates in the submicron size range can be eased by using a transmitted electron detection device both of the bright and dark field operation mode. The image contrast thus may be improved by orders of magnitude, also allowing on line operation of an image analysis system. Using a special preparation technique, depositing the particles on a thin supporting foil which is also used for LAMMA analysis – Wieser et al. 1980, the x-ray spectra of single particles provided by an energy dispersive x-ray spectrometer may be quantitatively interpreted on the basis of the peak-to-background method (Statham and Pawley 1978, Small et al. 1979). Figure 1 shows a schematic of the transmission detector device of the JSM 50 A when operated in the dark field mode. Geometrical dimensions and apertures also are given in Fig. 1. The dark field diaphragm (DFD) on the optical axis of the microscope blocks all electrons (primary electrons and scattered electrons) within an angle of about 10^?2 rad from contributing to the video signal. As long as magnifications above about 350 × are used the primary electron beam hits the DFD thus yielding a transmission scanning electron micrograph in dark field mode. Below this limit or above the corresponding maximal scanning angle (about 7 × 10^?3 rad) of the primary electron beam the rim of the DFD becomes visible in the displayed image as shown in Fig. 2a. At the same magnification Figure 2b shows the sharpened contours of the DFD as obtained by focussing the primary electron beam to the plane of the DFD by lowering the objective lens excitation. By means of the thin bar attached to the DFD (left hand upper corner of Fig. 2b) the DFD may be centered to the optical axis or exchanged to the bright field aperture. Looking to the circular center of Fig. 2a, we recognize the black grid bars and a few black particles whereas the supporting foil looks bright. No video signal can be obtained, because both the grid bars, and to a lesser extent the particles, are not transparent to the primary electrons of 15 keV energy. On the other hand all electrons scattered by the thin foil to an angle of more than 10^?2 rad are seen by the scintillator and hence accumulate a measurable video signal: This is also favoured by the large solid angle outside the DFD, which is about 30 times the solid angle of the DFD itself.     

Secondary electron detection in the scanning transmission electron microscope

In a dedicated scanning transmission electron microscope (STEM) secondary electron images with high spatial resolution and good contrast can be obtained. Two types of detector are described. These take into account the secondary electrons which depend on the post-specimen field strength of the objective lens. Due to the thinness of the samples and the collection geometry the images differ from those obtained in a convectional scanning microscope. Examples are given where secondary electron images augment the information obtained by the more commonly used imaging modes.     

Reduction of edge penetration effect in the scanning electron microscope

Electron penetration into the sample in the scanning electron microscope can give rise to bright fringes close to sharp edges in the secondary electron image. This can make it difficult to see details close to the edge. These fringes can be considerably reduced by putting a positive control electrode (CE) between the specimen and the collector. This can be mounted with an insulated clip directly onto the specimen stub. The effectiveness of this technique is demonstrated for the case of a cleaved silicon wafer containing microelectronic structures. The action of the CE is explained in terms of the effective solid angle subtended by the collector at the surface of the specimen.