Analysis of Kikuchi band contrast reversal in electron backscatter diffraction patterns of silicon

We analyze the contrast reversal of Kikuchi bands that can be seen in electron backscatter diffraction (EBSD) patterns under specific experimental conditions. The observed effect can be reproduced using dynamical electron diffraction calculations. Two crucial contributions are identified to be at work: First, the incident beam creates a depth distribution of incoherently backscattered electrons which depends on the incidence angle of the beam. Second, the localized inelastic scattering in the outgoing path leads to pronounced anomalous absorption effects for electrons at grazing emission angles, as these electrons have to go through the largest amount of material. We use simple model depth distributions to account for the incident beam effect, and we assume an exit angle dependent effective crystal thickness in the dynamical electron diffraction calculations. Very good agreement is obtained with experimental observations for silicon at 20 keV primary beam energy.     

Simulation and test of a point focused electron beam emitter

We present the design analysis of a point focused electron beam emitter using numerical techniques. Simulation and modeling were performed followed by the calculation of emission parameters using programming codes EGUN and CST-PS. Beam emittance, average current density and perveance were calculated and are in agreement with the experimental values obtained at 10 kV acceleration potential. The emission parameters were evaluated up to 110 kV. This confirms possibilities of potential application of emitter for a linear accelerator.     

Multiscale iterative voting for differential analysis of stress response for 2D and 3D cell culture models

Focused ion beam-scanning electron microscope (FIB-SEM) tomography is a powerful application in obtaining three-dimensional (3D) information. The FIB creates a cross section and subsequently removes thin slices. The SEM takes images using secondary or backscattered electrons, or maps every slice using X-rays and/or electron backscatter diffraction patterns. The objective of this study is to assess the possibilities of combining FIB-SEM tomography with cathodoluminescence (CL) imaging. The intensity of CL emission is related to variations in defect or impurity concentrations. A potential problem with FIB-SEM CL tomography is that ion milling may change the defect state of the material and the CL emission. In addition the conventional tilted sample geometry used in FIB-SEM tomography is not compatible with conventional CL detectors. Here we examine the influence of the FIB on CL emission in natural diamond and the feasibility of FIB-SEM CL tomography. A systematic investigation establishes that the ion beam influences CL emission of diamond, with a dependency on both the ion beam and electron beam acceleration voltage. CL emission in natural diamond is enhanced particularly at low ion beam and electron beam voltages. This enhancement of the CL emission can be partly explained by an increase in surface defects induced by ion milling. CL emission enhancement could be used to improve the CL image quality. To conduct FIB-SEM CL tomography, a recently developed novel specimen geometry is adopted to enable sequential ion milling and CL imaging on an untilted sample. We show that CL imaging can be manually combined with FIB-SEM tomography with a modified protocol for 3D microstructure reconstruction. In principle, automated FIB-SEM CL tomography should be feasible, provided that dedicated CL detectors are developed that allow subsequent milling and CL imaging without manual intervention, as the current CL detector needs to be manually retracted before a slice can be milled. Due to the required high electron beam acceleration voltage for CL emission, the resolution for FIB-SEM CL tomography is currently limited to several hundreds of nm in XY and up to 650 nm in Z for diamonds. Opaque materials are likely to have an improved Z resolution, as CL emission generated deeper in the material is not able to escape from it.     

Dynamical simulations of zone axis electron channelling patterns of cubic silicon carbide

We have observed and simulated energy-dependent intensity distributions in electron channelling patterns (ECP) of cubic silicon carbide (3C SiC) which were recorded close to the (111) zone axis. The kinetic energies used were in the range from 4 to 8 keV, covering the low-energy region of the ECP technique. We explain the observed patterns by dynamical many beam simulations using a bloch wave approach for the diffraction of the incoming beam and the forward-backward-approximation for the backscattering of the electrons. The dynamical simulations reproduce the experimental patterns very well. It is found that higher-order Laue zone reflections are responsible for the strong energy sensitivity of the intensity distributions.     

Defining the radiation chemistry during liquid cell electron microscopy to enable visualization of nanomaterial growth and degradation dynamics

We present a critical review of methods for defining the chemical environment during liquid cell electron microscopy investigation of electron beam induced nanomaterial growth and degradation. We draw from the radiation chemistry and liquid cell electron microscopy literature to present solution chemistry and electron beam–based methods for selecting the radiolysis products formed and their relative amount during electron irradiation of liquid media in a transmission electron microscope. We outline various methods for establishing net oxidizing or net reducing reaction environments and propose solvents with minimal overall production of radicals under the electron beam. Exemplary liquid cell electron microscopy experiments in the fields of nanoparticle nucleation, growth, and degradation along with recommendations for best practices and experimental parameters are reported. We expect this review will provide researchers with a useful toolkit for designing general chemistry and materials science liquid cell electron microscopy experiments by ‘directing’ the effect of the electron beam to understand fundamental mechanisms of dynamic nanoscale processes as well as minimizing radiation damage to samples.     

Signal components in the environmental scanning electron microscope

We demonstrate that the gas-amplified secondary electron signal obtained in the environmental scanning electron microscope has both desired and spurious components. In order to isolate the contributions of backscattered and secondary electrons, two sets of samples were examined. One sample consisted of a pair of materials having similar secondary emission coefficients but different backscatter coefficients, while the other sample had a pair with similar backscatter but different secondary emission coefficients. Our results show how the contribution of the two electron signals varies according to the pressure of the amplifying gas. Backscatter contributions, as well as background due to gas ionization from the primary beam, become significant at higher pressure. Furthermore, we demonstrate that the relative amplification efficiencies of various electron signals are dependent upon the chemistry of the gas.     

Coulomb interactions in Ga LMIS

For low emission currents from around 1 microA Ga liquid-metal ion sources (LMIS) produce fine optically bright ion beams that are strongly limited by the Coulomb particle-particle interactions. We present computations of the energy spread, the beam virtual crossover size, and beam brightness based on direct numerical integration of the equation of motion in a numerically calculated field for a number of dimensions of the emission tip. The Coulomb particle-particle interactions are included into the calculation of ion beam evolution. A comparison with experimental data allows to estimate the tip size.     

Application of the scatter diagram technique to the scanning electron microscope: preliminary results from diamond

Using primary beam energies E0 ranging from 0.2 to 15 keV and an in-lens detector, a series of images of the same region of an artificial microstructured diamond sample have been acquired in scanning electron microscopy. Next, the images were analysed by using a scatter diagram technique to underline the topographic contrast change and contrast reversal. The results obtained from 0.5 to 15 keV are discussed with the help of an expression derived from the constant loss model for the secondary electron yield delta of diamond, but including the respective roles of the angle of incidence, i, and of the angle of detection, alpha. More surprising is the quality of images obtained at a beam energy as low as 0.2 keV, and more difficult to explain is the significant contrast change between 0.2 keV and 0.5 keV. For the first time, scatter diagrams are used as a diagnostic tool in scanning electron microscopy, and after some improvements it is hoped that the experimental approach followed here may lead to quantitative estimates of the local tilts of a specimen surface.     

Orientation and phase mapping in the transmission electron microscope using precession‐assisted diffraction spot recognition: state‐of‐the‐art results

A recently developed technique based on the transmission electron microscope, which makes use of electron beam precession together with spot diffraction pattern recognition now offers the possibility to acquire reliable orientation/phase maps with a spatial resolution down to 2 nm on a field emission gun transmission electron microscope. The technique may be described as precession‐assisted crystal orientation mapping in the transmission electron microscope, precession‐assisted crystal orientation mapping technique–transmission electron microscope, also known by its product name, ASTAR, and consists in scanning the precessed electron beam in nanoprobe mode over the specimen area, thus producing a collection of precession electron diffraction spot patterns, to be thereafter indexed automatically through template matching. We present a review on several application examples relative to the characterization of microstructure/microtexture of nanocrystalline metals, ceramics, nanoparticles, minerals and organics. The strengths and limitations of the technique are also discussed using several application examples.     

Electron beam-induced thickening of the protective oxide layer around Fe nanoparticles

There are many circumstances in science where the process of measuring the properties of a system alters the system. An imaging process can exert an inadvertent effect on the object being observed. Consequently, what we observe does not necessarily represent what had been present before the observation. Normally, this effect can be ignored if the consequence of such a change is believed not to be significant. The expansion of nanostructured materials has made high-resolution transmission electron microscopy one of the indispensable tools for probing the characteristics of nanomaterials. Modification of nanoparticles by the electron beam during their imaging has been widely noticed and this is generally believed to be due to electron beam-induced heating effect, defect formation in the particles, charging of the particle, or excitation of surrounding gases. However, an explicit experimental identification of which process dominates is often very hard to establish. We report the thickening of native oxide layer on iron nanoparticle under electron beam irradiation. Based on atomic level imaging, electron diffraction, and computer simulation, we have direct evidence that the protecting oxide layer formed on Fe nanoparticle at room temperature in air or oxygen continues to grow during an electron beam bombardment in the vacuum system typical of most TEM systems. Typically, the oxide layer increases from approximately 3 to approximately 6 nm following approximately 1h electron beam exposure typically with an electron flux of 7 x 10(5)nm(-2)s(-1) and an vacuum of approximately 3 x 10(-5)Pa. Partial illumination of a nanoparticle and observation of the shell thickening conclusively demonstrates that many of the mechanisms postulated to explain such processes are not occurring to a significant extent. The observed growth is not related to the electron beam-induced heating of the nanoparticle, or residual oxygen ionization, or establishment of an electrical field, rather it is related to electron beam-facilitated mass transport across the oxide layer (a defect-related process). The growth follows a parabolic growth law.     

An integrated charge exchange recombination spectroscopy/beam emission spectroscopy diagnostic for Alcator C-Mod tokamak

A novel integrated charge exchange recombination spectroscopy (CXRS)/beam emission spectroscopy (BES) system is proposed for C-Mod, in which both measurements are taken from a shared viewing geometry. The supplementary BES system serves to quantify local beam densities and supplants the common calculation of beam attenuation. The new system employs two optical viewing arrays, 20 poloidal and 22 toroidal channels. A dichroic filter splits the light between two spectrometers operating at different wavelengths for impurity ion and beam neutrals emission. In this arrangement, the impurity density is inferred from the electron density, measured BES and CXRS spectral radiances, and atomic emission rates.     

Nanomaterials for field electron emission: preparation,characterization and application

We review the current development in synthesis and deposition techniques of quasi-one-dimensional nanomaterials and recent achievements in the study of the field electron emission properties of these materials. Major findings are given from our recent experimental study of the field electron emission characteristics of carbon nanotubes, copper sulfide and silicon carbide nanorods. The study reveals that the above nanomaterials are promising candidates as cold cathode electron emitters. Furthermore, we review the recent development of techniques for growing and depositing the above nanomaterials in device structures. Typical device structures and their performance are also shown.     

Parameters and mechanisms governing image contrast in scanning electron microscopy of single-walled carbon nanotubes

Image formation of single-walled carbon nanotubes (SWNTs) in the scanning electron microscope (SEM) is peculiarly sensitive to primary electron landing energy, imaging history, sample/substrate geometry, electrical conductivity, sample contamination, and substrate charging. This sensitivity is probably due to the extremely small interaction volume of the SWNTs' monolayered, nanoscale structures with the electron beam. Traditional electron beam/bulk specimen interaction models appear unable to explain the contrast behavior when directly applied to SWNTs. We present one systematic case study of SWNT SEM imaging with special attention to the above parameters and propose some physical explanations for the effect of each. We also demonstrate that it is possible to employ voltage biasing to counteract this extrinsic behavior, gain better control of the image contrast, and facilitate the interpretation of SWNT images in the SEM.     

An experimental model of beam broadening in the variable pressure scanning electron microscope

In the variable pressure scanning electron microscope (VP-SEM) the incident electrons pass through a gaseous environment and the beam is scattered by these interactions. We show here that the experimental intensity profile of the scattered beam can be described as Gaussian in form to a high level of accuracy. This provides a rapid means of accounting for the effects of beam scatter in imaging and microanalysis because the standard deviation of the Gaussian is a simple function of parameters such as working distance, beam energy, gas type and pressure.     

Electron beam confinement and image contrast enhancement in near field emission scanning electron microscopy

In conventional scanning electron microscopy (SEM), the lateral resolution is limited by the electron beam diameter impinging on the specimen surface. Near field emission scanning electron microscopy (NFESEM) provides a simple means of overcoming this limit; however, the most suitable field emitter remains to be determined. NFESEM has been used in this work to investigate the W (1 1 0) surface with single-crystal tungsten tips of (3 1 0), (1 1 1), and (1 0 0)-orientations. The topographic images generated from both the electron intensity variations and the field emission current indicate higher resolution capabilities with decreasing tip work function than with polycrystalline tungsten tips. The confinement of the electron beam transcends the resolution limitations of the geometrical models, which are determined by the minimum beam width.     

Secondary electron emission in the scanning electron microscope

The secondary electron emission induced by electrons in the energy range 2.5–25 keV was measured in a SEM. Values of the emission coefficient for C, Al, Cu, Mo, Ag and Au are presented showing that it varies systematically with atomic number. The coefficient is still appreciable at 25 keV beam energy. The signal from the secondary electron collector in the SEM includes large contributions from sources other than secondary electron emission from the specimen. These contributions are discussed and their relative importance measured. Physics Abstracts classification numbers: 0.690, 8.900     

Construction of a Cerenkov light source

A radiation source has been developed and implemented from Cerenkov emission that is intended to provide an intense continuum from the infrared to 600 A. Parasitic use of the primary electron beam at the Stanford Linear Accelerator Center (SLAC) together with a novel optical geometry for light collection can give a focused and tunable ultraviolet beam with 10(4) kW/m(2)sr brightness, 10(-2) spectral purity, and with the pulsed, 5 ps time structure of the SLAC electron beam. Measurements of emission characteristics in the visible part of the spectrum correlate closely with the predicted performance.     

电子束飞行轨迹的实验研究

阐述了电子束技术的概况，以及电子束的产生和形成。使用60kW功率、20kV加速电压的电子束轰击炉，通过实验分析研究电子束电子的实际飞行轨迹，并利用实验数据验证理论结果。     

Prototypes using metal, carbon fiber and composite field emission sources modulated by a laser beam.

Field emission of electrons from a variety of metallic, carbon fiber and composite metal-insulator micropoint cathodes was employed in this study. Tungsten, carbon fiber and ZrC tips, were studied using a field emission microscope. These cathodes were characterized and the current-voltage (I-V) characteristics were determined. A variety of surface treatment procedures were carried out to increase the stability of emission. These electron sources were mounted in sealed prototype field emission tubes, while others were tested under medium, high and UHV conditions. The emission current switch-on phenomenon was found with all non-metallic cathodes. The emitters were then subjected to a square wave-modulated, maximally focused laser diode beam (lambda = 658 nm, 30mW). The beam impedance (approximately 1 Gohms) and the anode capacitance (approximately 10 pF) act as a low-pass filter.