Fabrication and Characterization of ZrB2-Based Ceramic Using Synthesized ZrB2–LaB6 Powder

ZrB₂–LaB₆ powder was obtained by reactive synthesis using ZrO₂, La₂O₃, B₄C, and carbon powders. Then ZrB₂–20 vol% SiC–10 vol% LaB₆ (ZSL) ceramics were prepared from commercially available SiC and the synthesized ZrB₂–LaB₆ powder via hot pressing at 2000°C. The phase composition, microstructure, and mechanical properties were characterized. Results showed that both LaB₆ and SiC were uniformly distributed in the ZrB₂ matrix. The hardness and bending strength of ZSL were 17.06±0.52 GPa and 505.8±17.9 MPa, respectively. Fracture toughness was 5.7±0.39 MPa·m^1/2, which is significantly higher than that reported for ZrB₂–20 vol% SiC ceramics, due to enhanced crack deflection and crack bridging near SiC particles.     

Thermophysical Properties of ZrB2 and ZrB2–SiC Ceramics

Thermophysical properties were investigated for zirconium diboride (ZrB₂) and ZrB₂–30 vol% silicon carbide (SiC) ceramics. Thermal conductivities were calculated from measured thermal diffusivities, heat capacities, and densities. The thermal conductivity of ZrB₂ increased from 56 W (m K)⁻¹ at room temperature to 67 W (m K)⁻¹ at 1675 K, whereas the thermal conductivity of ZrB₂–SiC decreased from 62 to 56 W (m K)⁻¹ over the same temperature range. Electron and phonon contributions to thermal conductivity were determined using electrical resistivity measurements and were used, along with grain size models, to explain the observed trends. The results are compared with previously reported thermal conductivities for ZrB₂ and ZrB₂–SiC.     

High-Temperature Chemistry and Oxidation of ZrB2 Ceramics Containing SiC, Si3N4, Ta5Si3, and TaSi2

The effect of Si₃N₄, Ta₅Si₃, and TaSi₂ additions on the oxidation behavior of ZrB₂ was characterized at 1200°–1500°C and compared with both ZrB₂ and ZrB₂/SiC. Significantly improved oxidation resistance of all Si-containing compositions relative to ZrB₂ was a result of the formation of a protective layer of borosilicate glass during exposure to the oxidizing environment. Oxidation resistance of the Si₃N₄-modified ceramics increased with increasing Si₃N₄ content and was further improved by the addition of Cr and Ta diborides. Chromium and tantalum oxides induced phase separation in the borosilicate glass, which lead to an increase in liquidus temperature and viscosity and to a decrease in oxygen diffusivity and of boria evaporation from the glass. All tantalum silicide-containing compositions demonstrated phase separation in the borosilicate glass and higher oxidation resistance than pure ZrB₂, with the effect increasing with temperature. The most oxidation-resistant ceramics contained 15 vol% Ta₅Si₃, 30 vol% TaSi₂, 35 vol% Si₃N₄, or 20 vol% Si₃N₄ with 10 mol% CrB₂. These materials exceeded the oxidation resistance of the ZrB₂/SiC ceramics below 1300°–1400°C. However, the ZrB₂/SiC ceramics showed slightly superior oxidation resistance at 1500°C.     

Transmission Electron Microscopy Characterization of Hot-Pressed ZrB2 with MoSi2 Additive

Microstructure of the hot-pressed ZrB₂ with MoSi₂ additive was investigated by transmission electron microscopy (TEM). The effect of MoSi₂ addition on the microstructure of the ceramic was assessed. For the pure ZrB₂, the microstructure consisted of the equiaxed ZrB₂ grains and a few elongated ZrB₂ grains. For the ZrB₂ with MoSi₂ additive, the microstructure consisted almost entirely of equiaxed ZrB₂ grains. A few dislocations were present in the ZrB₂ grains. In addition, high-resolution TEM observations showed that the intergranular amorphous phase was absent at two ZrB₂ grain boundaries in the ZrB₂ with MoSi₂ additive.     

Electrochemical Studies in Glass: I, The System NiO-Na2Si2O5

A solid electrolyte electrochemical cell of the type Pt|Ni:NiO _{a =1}∥ZrO₂+7.5% CaO∥Ni:NiO _{a <1}+glass|Pt was used to measure the activities of NiO in sodium disilicate glass from 750° to 1100°C. The data indicate a solubility varying from 11 mol% (5.0 wt%) at 800° to 20 mol% (9.3 wt%) at 1100°C. From the variation in NiO activity, the activity of sodium disilicate in glass solution was estimated; from these combined data partial molar free energies and entropies of solution of NiO and Na₂Si₂O₅ and free energies and entropies of mixing were calculated. A partial phase diagram for the system NiO-Na₂Si₂O₅ proposed from solubility data indicates a eutectic at ∼12 mol% (5.3 wt%) NiO at 830°C.     

Subsolidus Phase Relationships in Part of the System Si,Al,Y/N,O: The System Si3N4─AIN─YN─Al2O3─Y2O3

The subsolidus phase relationships in the system Si,Al,Y/N,O were determined. Thirty-nine compatibility tetrahedra were established in the region Si₃N₄─AIN─Al₂O₃─Y₂O₃. The subsolidus phase relationships in the region Si₃N₄─AIN─YN─Y₂O₃ have also been studied. Only one compound, 2YN:Si₃N₄, was confirmed in the binary system Si₃N₄─YN. The solubility limits of the α'─SiAION on the Si₃N₄─YN:3AIN join were determined to range from m = 1.3 to m = 2.4 in the formula Y _{m /3}Si_{12- m} Al _m N₁₆. No quinary compound was found. Seven compatibility tetrahedra were established in the region Si₃N₄─AIN─YN─Y₂O₃.     

Interface Crystallography and Structure in LaB6–ZrB2 Directionally Solidified Eutectics

Interfaces in LaB₆–ZrB₂ composites directionally solidified by a zone melting process were characterized by transmission electron microscopy (TEM). The nominal crystallographic orientation relationship between the two phases corresponded to a high-symmetry near-coincidence site lattice (NCSL). The small mistilt (2°–5°) from the high-symmetry orientation relationship was shown to result in an increased volume density of coincident sites. Furthermore, the dominant interface facet planes were predicted by the NCSL model. The configurations of interfacial misfit dislocations were analyzed by high-resolution TEM and showed a good agreement with predictions based on the displacement shift complete lattice and secondary original lattice (O2-lattice) models. These analyses suggested that interfaces were relaxed to relatively low-energy configurations.     

Synthesis and Characterization of Ti0.33Ta0.33Nb0.33C and Ti0.33Ta0.33Nb0.33CxN1-x Whiskers

Ta_0.33Ti_0.33Nb_0.33C and Ta_0.33Ti_0.33Nb_0.33C _x N_{1− x} whiskers were synthesized via a carbothermal vapor-liquid-solid growth mechanism in the temperature range 900°-1450°C in Ar or N₂. The optimum temperature was 1250°C. Whiskers were obtained in a yield of 70-90 vol%. The whiskers were 0.5–1 µm in diameter and 10–30 µm in length. The starting materials that produced the highest whisker yield were: TiO₂, Ta₂O₅, Nb₂O₅, C, Ni, and NaCl. C was added to reduce the oxides, and Ni to catalyze whisker growth. NaCl was used as a source of Cl for vapor-phase transportation of Ta and Nb oxochlorides and Ti chlorides to the catalyst. The catalyst metal was recycled several times during the synthesis and was transported as NiCl₂( g ) according to thermodynamic calculations. The rate of formation and the chemical composition of the whiskers depended on the synthesis temperature, the choice of catalyst, and the atmosphere. At low temperatures, the whiskers were enriched in Nb and Ta, whereas the Ti content increased with increased synthesis temperature.     

Properties of a Pressureless-Sintered ZrB2–MoSi2 Ceramic Composite

A ZrB₂-based composite was fully densified by pressureless sintering at 1850°C with addition of 20 vol% MoSi₂. The microstructure was very fine, with mean dimensions of ZrB₂ grains around 2.5 μm. The four-point flexural strength in air was in excess of 500 MPa up to 1500°C.     

The ZrB2 Volatility Diagram

A volatility diagram was calculated for temperatures of 1000, 1800, and 2500 K to understand the oxidation of ZrB₂. Applying the diagram, it can be seen that exposure of ZrB₂ to air produces ZrO₂ (cr) and B₂O₃ (l) over the temperature range considered. The pressure of the predominant vapor species was predicted to increase from ∼10⁻⁶ Pa at 1000 K, to 344 Pa at 1800 K, and to ∼10⁵ Pa at 2500 K. Predictions were consistent with experimental observations that ZrB₂ exhibits passive oxidation below 1200 K, but undergoes active oxidation at higher temperatures due to B₂O₃ (l) evaporation.     

Properties of Sm2O3─Al2O3─SiO2 Glasses for In Vivo Applications

The compositional range for glass formation below 1600°C in the Sm₂O₃─Al₂O₃─SiO₂ system is (9–25)Sm₂O₃─(10–35)Al₂O₃─(40–75)SiO₂ (mol%). Selected properties of the Sm₂O₃─Al₂O₃─SiO₂ (SmAS) glasses were evaluated as a function of composition. The density, refractive index, microhardness, and thermal expansion coefficient increased as the Sm₂O₃ content increased from 9 to 25 mol%, the values exceeding those for fused silica. The dissolution rate in 1 N HCl and in deionized water increased with increasing Sm₂O₃ content and with increasing temperature to 70°C. The transformation temperature ( T _g ) and dilatometric softening temperature ( T _d ) of the SmAS glasses exceeded 800° and 850°C, respectively.     

TIOx/Al2O3 Multilayer Ceramic Thin Films

Titanium oxide/aluminum oxide films have been deposited using molecular beam epitaxy methods and characterized by reflection high-energy electron diffraction and transmission electron microscopy techniques. Growth on silicon substrates below 973 K resulted in primarily amorphous multilayers. At 1323 K, the deposition of titanium in an oxygen atmosphere on (0001) Al₂O₃ substrates resulted in films of Ti₂O₃. These films consisted of small domains, up to 60 nm, slightly misoriented from a [1120] ∥ [1120] orientation relationship. Two variants of Ti₂O₃ were observed due to multiple positioning during growth. Closing the titanium shutter during growth resulted in an oriented TiO₂ film.     

Microstructural Evolution and Grain Growth Kinetics in ZrB2–SiC Composites During Heat Treatment

This work reported the microstructural evolution and grain growth kinetics of ZrB₂–SiC composites containing 10, 20, and 30 vol% SiC during heat treatment at 2000°C. The coarsening of ZrB₂ occurred in the three systems, whereas the obvious coarsening for SiC appeared only in the composite with 30 vol% SiC. The kinetics analysis showed the ZrB₂ grain growth rate in the ZrB₂–30 vol% SiC was 25 times lower than that for ZrB₂–10 vol% SiC during heat treatment. Furthermore, the grain growth controlling mechanisms of ZrB₂ and SiC were discussed. In addition, it was found that the heat treatment had little effect on Vickers hardness and fracture toughness of ZrB₂–SiC.     

Ternary System Al2O3—MgO—CaO: Part II, Phase Relationships in the Subsystem Al2O3—MgAl2O4—CaAl4O7

Solid-state compatibility and melting relationships in the subsystem Al₂O₃—MgAl₂O₄—CaAl₄O₇ were studied by firing and quenching selected samples located in the isopletal section (CaO·MgO)—Al₂O₃. The samples then were examined using X-ray diffractomtery, optical microscopy, and scanning and transmission electron microscopies with wavelength- and energy-dispersive spectroscopies, respectively. The temperature, composition, and character of the ternary invariant points of the subsystem were established. The existence of two new ternary phases (Ca₂Mg₂Al₂₈O₄₆ and CaMg₂Al₁₆O₂₇) was confirmed, and the composition, temperature, and peritectic character of their melting points were determined. The isothermal sections at 1650°, 1750°, and 1840°C of this subsystem were plotted, and the solid-solution ranges of CaAl₄O₇, CaAl₁₂O₁₉, MgAl₂O₄, Ca₂Mg₂Al₂₈O₄₆, and CaMg₂Al₁₆O₂₇ were determined at various temperatures. The experimental data obtained in this investigation, those reported in Part I of this work, and those found in the literature were used to establish the projection of the liquidus surface of the ternary system Al₂O₃—MgO—CaO.     

Thermal and Electric Properties in Hot-Pressed ZrB2–MoSi2–SiC Composites

The thermal and electrical properties of MoSi₂ and/or SiC-containing ZrB₂-based composites and the effects of MoSi₂ and SiC contents were examined in hot-pressed ZrB₂–MoSi₂–SiC composites. The thermal conductivity and electrical conductivity of the ZrB₂–MoSi₂–SiC composites were measured at room temperature by a nanoflash technique and a current–voltage method, respectively. The results indicate that the thermal and electrical conductivities of ZrB₂–MoSi₂–SiC composites are dependent on the amount of MoSi₂ and SiC. The thermal conductivities observed for all of the compositions were more than 75 W·(m·K)⁻¹. A maximum conductivity of 97.55 W·(m·K)⁻¹ was measured for the 20 vol% MoSi₂-30 vol% SiC-containing ZrB₂ composite. On the other hand, the electrical conductivities observed for all of the compositions were in the range from 4.07 × 10–8.11 × 10 Ω⁻¹·cm⁻¹.     

Discontinuous Dissolution and Grain-Boundary Migration in Al2O3-Fe2O3 by Oxygen Partial Pressure Change

When sintered 95Al₂O₃-5Fe₂O₃ (wt%) specimens constituting corundum grains and iron aluminate spinel precipitates were annealed under high oxygen partial pressure (P_o2) where only a corundum phase is stable, fast dissolution of particulate spinel precipitates occurred, together with the migration of corundum grain boundaries. Behind the migrating boundaries, a corundum solid solution enriched with Fe₂O₃ formed. Discontinuous dissolution (DD) of particulate spinel precipitates thus occurred by P_o2 increase. In contrast, when 95Al₂O₃-5Fe₂O₃ specimens constituting only corundum grains were annealed under low P_o2 where both corundum and spinel phases are stable, grain boundaries migrated without spinel precipitation, leaving behind a corundum phase depleted of Fe₂O₃, similar to chemically induced grain-boundary migration (CIGM) observed during solute depletion. The volatilization of Fe₂O₃ appeared to cause the boundary migration without precipitation. The observed CIGM and DD would suggest various possibilities of microstructure control in other oxide systems through oxygen partial pressure change.     

Optical and X-Ray Single Crystal Studies of the Monoclinic ⇌ Tetragonal Transition in ZrO2

The monoclinic ⇌ tetragonal phase transition in ZrO₂ single crystals was studied at temperature by transmission optical microscopy and X-ray diffraction techniques. A series of timelapse photographs illustrated the relations between the events that occur during the transition. The events themselves were recognized by direct observation using a high-temperature microscope stage and by scrutiny of several high-temperature Laue photographs. During heating the monoclinic phase transforms to the tetragonal by the motion of an interface parallel to the (100) _m plane; simultaneous twinning also occurs behind the advancing interface. The tetragonal phase is usually twinned on the (1 2) _bct or ( 12) _bct plane, and the extent of twinning is influenced by the heating rate. Cooling transforms the untwinned tetragonal form into a twinned monoclinic form with the orientation of the monoclinic twins parallel to the trace of the (001) _m plane when observations are made in the (100) _m plane. Transformation of a twinned tetragonal crystal results in twins on the {110} _m and {001} _m planes. Orientation relations in the ZrO₂ transformation are: (100) _m ‖(110) _bct , [010] _m ‖[001] _bct , and by the virtue of twinning, (100) _m ‖(110) _bct , [001] _m ‖[001] _bct . During cooling the same topotaxial relations are maintained.     

Molten Salt Synthesis of Anisotropic Sr2Nb2O7 Particles

Growth of Sr₂Nb₂O₇ particle size in KCl melts occurs by reaction on insoluble Nb₂O₅ particles in the melt. Thus, Sr₂Nb₂O₇ size is controlled by the initial size of the reactants. By altering the reactant composition to include larger Nb-rich reactants such as SrNb₂O₆, 5-30 µm, anisotropic Sr₂Nb₂O₇ particles are formed.     

Decomposition of Mullite by Silica Volatilization

Thermal decomposition of mullite into corundum was investigated using a high-temperature X-ray single-crystal camera equipped with a gas-flame furnace and by scanning electron microscopy and electron probe microanalysis (EPMA). When heated to ∼1750°C, mullite decomposed to corundum by the liberation of the SiO₂ component with topotaxial relations of:

• (1) 

  (310)_mull∥(001)_cor; [001]_mull∥[110]_cor
• (2) 

  (130)_mull∥(001)_cor; [001]_mull∥[110]_cor
• (3) 

  (110)_mull∥(001)_cor; [001]_mull∥[110]_cor

Thus, it was considered that, when mullite decomposed into corundum, their oxygen close-packed planes were almost preserved. The SEM photographs showed that the crystals of the developed corundum are prismatic and ∼5 μm wide. The EPMA showed that the phase boundary between mullite and developed corundum is discontinuous.     

Electron Irradiation Induced Transformation of (Pb5Ca5)(VO4)6F2 Apatite to CaVO3 Perovskite

Crystallochemical changes of (Pb₅Ca₅)(VO₄)₆F₂ apatite under electron irradiation were examined by transmission electron microscopy. The apatite, a synthetic analog of vanadinite, was moderately stable towards a less intense 300-keV LaB₆ source, while it changed rapidly in structure when exposed to the higher flux of a 200-keV field emission gun. The electron beam induced transformation of vanadinite proceeds sequentially by (i) migration and loss of fluorine, (ii) lead volatilization and conversion to 2–5-nm platelets of a glaserite-type structure, and (iii) the reduction of V⁵⁺ to V⁴⁺ with the removal of lead and calcium oxide that leads to single-crystal CaVO₃ perovskite as the ultimate product. The phase transformations are interpreted based on the crystallographic relations among the CaVO₃ perovskite, the (Pb₅Ca₅)(VO₄)₆F₂ apatite and the glaserite-type structures, and compositional changes under electron irradiation.