CVD条件对金刚石薄膜/钼基体界面层的影响

用微波等离子体化学气相沉积法(MPCVD)在Mo基片上沉积金刚石薄膜时,界面层钼的碳化程度与初始沉积条件有关.利用XRD,SEM,EDS对界面层进行的研究表明:在化学气相沉积的开始阶段,较低的甲烷浓度有利于碳向基体内的扩散从而让表面的Mo充分碳化,形成富含Mo2C的界面层.甲烷浓度过高时有利于金刚石的形核而不利于碳向基体内的扩散.在金刚石薄膜的生长过程中,碳向基体内的扩散很少,界面层的组成结构保持不变.     

金刚石薄膜的研究概况

介绍了金刚石薄膜的制备方法及应用前景,简要分析了金刚石薄膜未来的研究重点.     

采用Cu／Ti过渡层沉积金刚石薄膜刀具的界面结构

研究了硬质合金基底上Cu／Ti作过渡层化学气相沉积(CVD)金刚石薄膜的界面特性。利用激光Ra—man谱分析了过渡层不同生长阶段金刚石薄膜的质量的影响。采用SEM、EDS对金刚石薄膜硬质合金刀具横截面的结构进行了研究。结果表明：基体中的Co被Cu／Ti作过渡层有效的抑制住；Cu向基体内的扩散改善了基体的性能，提高了界面层金刚石薄膜的质量；Ti的引入促进了金刚石的形核，减少了界面处晶粒间的空隙，提高了金刚石薄膜与基体表面的实际接触面积。     

热丝CVD法制备金刚石管

以钨丝作为基体,用氢气和丙酮作为反应气体,在热丝化学气相沉积装置中制备出了金刚石管,其生长速度达到了4μm／h．扫描电镜和激光拉曼光谱的测试结果表明制备出的金刚石管质量较好．     

金刚石薄膜的研究概况

介绍了金刚石薄膜的制备方法及应用前景,简要分析了金刚石薄膜未来的研究重点.     

微波CVD法低温制备纳米金刚石薄膜

利用甲醇和氢气的混合气体，用微波等离子体CVD方法在480℃下成功地在硅片表面制备出纳米金刚石薄膜，本文研究了甲醇浓度和沉积温度对金刚石膜形貌的影响．通过Raman光谱、原子力显微镜及扫描隧道显微镜对样品的晶粒尺寸及质量进行了表征．研究结果表明：通过提高甲醇浓度和降低沉积温度可以在直径为50mm的硅片表面沉积高质量的纳米金刚石薄膜，晶粒尺寸大约为10～20nm，并对低温下沉积高质量的纳米金刚石薄膜的机理进行了讨论．     

热丝CVD法制备金刚石管

以钨丝作为基体,用氢气和丙酮作为反应气体,在热丝化学气相沉积装置中制备出了金刚石管,其生长速度达到了4 um/h.扫描电镜和激光拉曼光谱的测试结果表明制备出的金刚石管质量较好.     

金刚石薄膜的低温沉积

采用乙醇和氢气作为工作气体，利用微波等离子体化学气相沉积法在较低的沉积温度下制备了金刚石薄膜，用扫描电子显微镜(SEM)、Raman光谱、X射线衍射仪(XRD)和红外光谱研究了薄膜的结构和性质。结果表明：在450℃的基片温度下，利用乙醇和氢气在优化的工艺条件下可得到具有微晶结构的金刚石薄膜。     

不同碳源对金刚石薄膜制备的影响

采用等离子辅助热丝化学气相沉积(PAHFCVD)装置,分别用甲烷和乙醇为碳源进行了金刚石薄膜的制备。并运用X射线衍射仪(XRD)和扫描电子显微镜(SEM)测试手段对沉积的金刚石薄膜进行了观察分析。结果表明,用乙醇制备的金刚石薄膜比甲烷制得的金刚石薄膜的生长率要高,膜的缺陷少、颗粒均匀。     

基片温度对纳米金刚石薄膜掺硼的影响

采用微波等离子体化学气相沉积法,以氢气稀释的乙硼烷为硼源进行了纳米金刚石(NCD)薄膜的生长过程掺硼,研究了基片温度对掺硼NCD薄膜晶粒尺寸、表面粗糙度、表面电阻和硼原子浓度的影响.利用扫描电子显微镜和原子力显微镜观察NCD薄膜的表面形貌,并通过Imager软件对原子力显微镜数据进行分析获得薄膜的表面粗糙度及平均晶粒尺寸信息;采用四探针测量掺硼NCD薄膜的表面方块电阻,利用二次离子质谱仪对掺杂后NCD薄膜表面区域的硼原子浓度进行测量.实验结果表明,较高的基片温度有利于提高薄膜的导电能力,但随着基片温度的提高,NCD薄膜的平均晶粒尺寸和表面粗糙度逐渐增大;此外,当反应气体中的乙硼烷浓度一定时,掺杂后NCD薄膜的表面硼原子浓度随基片温度升高存在一个饱和值.在所选乙硼烷浓度为0.01%的条件下,基片温度在700℃左右可以在保证薄膜表面电性能的基础上保持较好的表面形貌.     

SiC涂层的快速气相沉积

介绍了一种采用化学气相沉积技术，利用SiCl4 CH4体系快速沉积SiC涂层的方法，并讨论了工艺条件对沉积过程的影响．结果表明，采用SiCl4 CH4体系在900℃便可实现SiC的快速沉积，此方法所得SiC涂层的纯度不高，但适用于制备构件的抗烧蚀涂层．     

微波等离子体化学气相沉积金刚石光谱分析

采用等离子体光谱分析微波等离子体化学气相(MPCVD)沉积金刚石过程中基团的空间分布及甲烷浓度变化时基团浓度的变化情况.实验过程中分别测量了氢原子的Hα(656.19 nm)、Hβ(486.71 nm)和Hγ(434.56 nm)谱线,以及基团CH(431.31 nm)、C2(515.63 nm)谱线.结果表明:氢原子和基团CH、C2的浓度沿等离子体柱的径向先增加再减小.随着甲烷浓度逐步增加,氢原子及基团CH、C2的浓度相应增加,其中C2基团所受影响最大.     

Preparation of diamond/Cu microchannel heat sink by chemical vapor deposition

A Ti interlayer with thickness about 300 nm was sputtered on Cu microchannels, followed by an ultrasonic seeding with nanodiamond powders. Adherent diamond film with crystalline grains close to thermal equilibrium shape was tightly deposited by hot-filament chemical vapor deposition(HF-CVD). The nucleation and growth of diamond were investigated with micro-Raman spectroscope and field emission scanning electron microscope(FE-SEM) with energy dispersive X-ray detector(EDX). Results show that the nucleation density is found to be up to 1010 cm-2. The enhancement of the nucleation kinetics can be attributed to the nanometer rough Ti interlayer surface. An improved absorption of nanodiamond particles is found, which act as starting points for the diamond nucleation during HF-CVD process. Furthermore, finite element simulation was conducted to understand the thermal management properties of prepared diamond/Cu microchannel heat sink.     

Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I simulation of CVD diamond film growth under Joe—Badgwell—Hauge model

The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe‘s model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe‘s model are influenced intensively by temperature(Ts) and not evident bymass fraction Wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic‘s prediction;(4) the simulation results cannot make sure the role of single carbon insertion.     

CVD法制备Sb掺杂SnO2薄膜的结构与性能研究

采用化学气相沉积法（CVD）制备了Sb掺杂SnO2薄膜（ATO），研究了Sb掺杂量对ATO薄膜结构和性能的影响。利用X射线衍射（XRD）、扫描电镜（SEM）、X射线光电子能谱（XPS）等分析手段对所制得薄膜的结构、形貌、成分等进行了表征，XRD结果表明在基板温度为665 ℃时能够制得结晶性能较好的多晶薄膜，XPS分析确定掺杂后的Sb以Sb5+离子形式存在。讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响，结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8 Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势。最后探讨了Sb掺杂SnO2薄膜的显色特性，认为Sb5+离子的本征吸收是薄膜显色的主要原因。     

Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part Ⅰ Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model

The growth of {100} oriented CVD (Chemical Vapor Deposition)diamond film under Joe-Badgwell-Hauge (J-B-H) model is simulated at atomic scale by using revised KMC (Kinetic Monte Carlo) method. The results show that: (1) under Joe's model, the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature; (2) the deposition rate and surface roughness () under Joe's model are influenced intensively by temperature ()and not evident bymass fraction of atom chlorine; (3)the surface roughness increases with the deposition rate, i.e. the film quality becomes worse with elevated temperature, in agreement with Grujicic's prediction; (4) the simulation results cannot make sure the role of single carbon insertion.     

硼浓度对沉积在刀具上的金刚石膜表面的影响

在热丝CVD装置中，以氢气、丙酮、硼酸三甲脂为原料，在YG6上制备了含硼金刚石薄膜．研究丙酮中硼含量对薄膜表面晶形及晶粒度的影响．结果表明，薄膜中渗入适量的硼不改变薄膜表面晶形，细化晶粒．有利于薄膜附着力的提高；而过高的硼含量恶化金刚石薄膜质量，降低薄膜附着力．     

Preparation and characterization of nano-crystalline diamond films on glass substrate

Adherent nano diamond films were successfully deposited on glass substrate by microwave plasma assisted CVD method in H2-CH4 and Ar-CH4 environment. Raman, AFM (Atomic Force Microscope), TEM (Transmission Electron Microscope), FTIR, and Nano Indentation techniques were used for characterization of the obtained nano diamond films. It was found that the average grain size was less than 100 nm with a surface roughness value as low as 2 nm. The nano diamond films were found to have excellent transparency in visible and IR spectrum range, and were as hard as natural diamond. Experimental results were presented. Mechanisms for nano diamond film deposition were discussed.