A new failure mechanism by corrosion of tungsten in a tungsten plug process

The tungsten filled via plug process is commonly used in sub-half micron CMOS process technologies. As process technologies shrink beyond the 0.25 μm generation, the metal overlap over the via also reduces. This results in vias not fully covered by the overlying interconnect lines. In the evaluation of such structures, we have observed a new failure mechanism resulting in completely unfilled vias due to electrochemical corrosion accelerated by a positive charge on specific structures. This positive charge is collected by the metal connected to the via during metal plasma etch processing and results in electro-chemical corrosion during a subsequent solvent strip process. The charge collection is found to be dependent on the geometry of the test structure. The corrosion rate is dependent on the amount of charge and the solvent pH. Methods to limit this corrosion are discussed.     

Statistical process control in semiconductor manufacturing

This paper summarizes the basic concepts and tools of Statistical Process Control as used today in semiconductor manufacturing. After their introduction, important concepts are illustrated with the help of application examples drawn from the area of yield control, photolithography and plasma etching. Time series modeling and the impact of computer integrated manufacturing will also be discussed.     

Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

The Gaussian distribution model have been used to analyze the anomalies observed in tungsten (W)/4H-SiC current voltage characteristics due to the barrier inhomogeneities that prevail at the metal-semiconductor interface. From the analysis of the forward I-V characteristics measured at elevated temperatures within the range of 303-448 K and by the assumption of a Gaussian distribution (GD) of barrier heights (BHs), a mean barrier height of 1.277 eV, a zero-bias standard deviation σ₀ = 0.092 V and a factor T₀ of 21.69 K have been obtained. Furthermore the modified Richardson plot according to the Gaussian distribution model resulted in a mean barrier height and a Richardson constant (A^∗) of 1.276 eV and 145 A/cm² K², respectively. The A^∗ value obtained from this plot is in very close agreement with the theoretical value of 146 A/cm² K² for n-type 4H-SiC. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the W/4H-SiC contacts can be successfully explained on the basis of a thermionic emission conduction mechanism with Gaussian distributed barriers. In addition, a comparison is made between the present results and those obtained previously assuming the pinch-off model.     

Sr0.3Ba0.7Bi3.7La0.3Ti4O15铁电陶瓷的烧结及介电性能

采用两步烧结工艺制备Sr0.3Ba0.7Bi3.7La0.3Ti4O15铁电陶瓷,研究了烧结工艺对陶瓷的晶相和介电性能的影响。结果表明:适当提高最高温度、保温温度和保温时间可改善陶瓷的介电性能。当最高温度为1180～1200℃,在1050～1080℃保温5～15h时,其εr为238～262,tanδ小于10–2,σ为1.0×10–11～10–12S·m–1。该烧结工艺可减少铋的挥发,降低氧空位浓度,因而减弱了陶瓷的高温低频耗散现象。随着保温时间的增加,高温电导得到有效抑制,在1050℃保温15h样品的σ降低了一个数量级,在280℃时为5.2×10–9S·m–1。     

Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates

The crystalline quality of wafer bonded (WB) silicon on insulator (SOI) structures thermal treated in dry oxygen ambients has been investigated by means of transmission electron microscopy and defect etching. The main crystallographic defects present in the SOI layers are dislocations, amorphous precipitates, and oxidation induced stacking faults (OISF). The evolution of the OISFs with time and temperature has also been investigated. The main feature observed is that the OISF in WB SOI structures undergo a retrogrowth process at temperatures around T = 1195°C for times of t = 2h. This result is very similar to that recently reported for oxygen implanted SOI (SIMOX) but considerably different from that observed in bulk silicon. The experimental data fits nicely a model recently proposed for the retrogrowth of OISF in thin SOI layers. This model considers that the self-interstitial supersaturation is considerably reduced compared to bulk silicon due to the relative fast point defect recombination inside the top silicon layer.     

Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

微波烧结Ba_(6-3x)Sm_(8+2x)Ti_(18)O_(54)陶瓷材料的初步研究

研究了Ba_(6-3x)Sm_(8+2x)Ti_(18)O_(54)(x=0.67,BST)陶瓷材料的微波烧结情况,从烧结特性、微结构与相组成及微波介电性能等方面对微波烧结的样品与传统工艺制得的样品进行了对比.结果表明, 与传统制备工艺相比,微波烧结BST陶瓷缩短了烧结周期,并促进了样品的致密化,其物相组成和传统烧结的样品没有区别,且晶粒细小分布均匀.微波烧结BST陶瓷可获得较优的微波介电性能:介电常数ε_r=82.89,品质因数与频率之积Qf=8 450 GHz(频率f=4.75 GHz),谐振频率温度系数τ_f=22.58×10~(-6)/℃.     

添加BaCu(B2O5)和ZnO的CaO-Li2O-Sm2O3-TiO2陶瓷低温烧结研究

采用固相反应法制备了添加复合助烧剂BaCu(B<,2>O<,5>)-ZnO的16CaO-9Li<,2>O-12Sm<,2>O<,3>-63TiO<,2>(CLST)陶瓷研究了所制CLST陶瓷的烧结特性、微观结构及介电性能.结果表明:低熔点的BaCu(B<,2>O<,5>)-ZnO复合助烧剂的加入,使CLST陶瓷的烧结温...     

基于SOA中XGM效应全光超宽带高斯单边信号源的研究

提出了一种基于半导体光放大器（SOA）中交叉增益调制（XGM）效应产生高斯单边信号（monocycle）脉冲的方案。该方案只需要单个外部光源和单个SOA,结构简单;采用相向的工作方式可以改善输出信号的消光比;输出的monocycle信号光只含有一个波长,在光纤传输过程中上下脉冲不会引入时间差。利用Optisystern...     

(Ca0.7Nd0.2)TiO3-(Li0.5Nd0.5)TiO3陶瓷的低温烧结与介电性能

用传统固相反应法合成(Ca0.7Nd0.2)TiO3-(Li0.5Nd0.5)TiO3(CLNT)陶瓷粉体.研究添加不同含量BaCu(B2O5)(BCB)对CLNT陶瓷的烧结特性及介电性能的影响.结果表明,其烧结温度降低了250℃,并且有第二相生成.当添加ω(BCB)=5%的CLNT陶瓷在950℃烧结2 h时,其介电性能为εr=94.03,tanδ=0.009 7,τf=1.076×10-6/℃,且介电损耗比纯片低.     

激光烧结Sr_(1.86)Ca_(0.14)NaNb_5O_(15)无Pb压电陶瓷

采用激光烧结技术,制备出相对密度为97.5%的Sr1.86Ca0.14NaNb5O15(SCNN)无Pb压电陶瓷。最佳烧结条件为:激光烧结功率密度为1.99W/mm2;激光烧结时间为60s;激光功率密度升降速率为0.50W/mm2.min。与传统炉烧SCNN陶瓷相比,激光烧结SCNN陶瓷室温下1MHz的介电常数κ从1312增长到1419,机电耦合系数k33从17%增长到了27%,压电常数d33从60pC/N提高到93pC/N。扫描电镜(SEM)观测发现:与传统炉烧陶瓷相比,激光烧结SCNN陶瓷的晶粒尺寸较小,气孔较少,Na挥发较少;陶瓷片的X射线衍射(XRD)分析表明,激光烧结陶瓷的晶粒具有一定程度的取向生长。     

A New Generation of Catalytic Poly(vinylidene fluoride) Membranes: Coupling Plasma Treatment with Chemical Immobilization of Tungsten‐Based Catalysts

A new generation of catalytically active membranes for secondary amine oxidation and phenol degradation has been developed by coupling the advantages of low‐temperature plasma‐modification processes with surface chemical immobilization reactions of catalysts. Poly(vinylidene fluoride) membranes have been modified with NH₃ radiofrequency glow discharges in order to graft amino groups at their surface, providing active sites for stable immobilization of tungsten‐based heterogeneous catalysts. Particular attention has been focused on tungstate, WO₄^2–, and decatungstate, W₁₀O₃₂^4–, which act efficiently as catalysts for the oxidation of secondary amines and as photocatalysts for the degradation of organic pollutants, respectively. Plasma‐modified membranes surface‐tailored with WO₄^2– have been used in catalytic membrane reactors to activate hydrogen peroxide for oxidizing secondary amines to nitrones; membranes modified with W₁₀O₃₂^4– have been used for the complete degradation of phenol. The obtained results, in terms of amine–nitrone conversion and phenol degradation, respectively, appear extremely promising; these modified membranes can be considered as a pioneering, successful example of heterogenization of W‐based catalysts on plasma‐treated membranes.     

复合助烧剂对0.4CaTiO3-0.6(Li1/2Nd1/2)TiO3陶瓷的低温烧结及性能的影响

采用传统的固相反应法制备了0.4CaTiO3.0.6(Li1/2Nd1/2)TiO3(CLNT)微波介质陶瓷,研究了复合添加BaCu(B2O5)(BCB)和2ZnO-B2O3(ZB)玻璃对CLNT陶瓷的烧结特性、相组成、微观形貌及介电性能的影响.结果表明:复合添加质量分数3%的ZB玻璃和5%的BCB能使CLNT陶瓷的烧...     

Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)

Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy catho doluminescence and soft x-ray photoemission spectroscopy. Our results reveal that for Au/GaAs(100) contacts Fermi level (E_F) stabilization energy shows little sensitivity to either substrate growth technique or the type of doping, and Iles in the 0.37 to 0.47 eV range above the valence band maximum (E_v). In contrast, the E_F position at Al/GaAs(100) interfaces is highly sensitive to substrate growth method for n-type GaAs, but shows no significant difference between the epitaxial and melt-grown p-type GaAs. Furthermore, for a specific substrate dopant type and growth method, gold and aluminum produce barrier heights which differ by 0.05 to 0.50 eV, depending upon the substrate growth and dopant properties. Cathodoluminescence results demonstrate that discrete surface and interface states responsible for E_F stabilization at these metal/GaAs junctions are highly sensitive to the substrate growth technique, as well as to the specific metal contact. This work emphasizes that both substrate crystalline and electronic properties, as well as the adatom-specific interface chemistry are crucial for the electrostatic barrier height formation at metal/GaAs contacts.     

压电复合材料PT－P（VDF／TeFE）的静水压压电性

用热轧辊机制备了压电复合材料ＰＴ－Ｐ（ＶＤＦ／ＴｅＦＥ），并利用ＬＣＲ电桥和Ｂｅｒｌｉｎｃｏｕｒｔ电路分别测量了其介电常数和压电常数，实验结果表明它具有良好的静水压压电特性。最后讨论了该复合材料在水听器中的应用     

The electrical properties and stability of the hafnium silicate/Si<Subscript>0.8</Subscript>Ge<Subscript>0.2</Subscript>(100) interface

The effect of post-oxidation N₂ annealing and post-metallization forming-gas annealing on the electrical properties of Pt/Hf-silicate (3 nm)/Si_0.8Ge_0.2(100)/n-type Si(100) metal-oxide semiconductor (MOS) capacitors is reported. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements of asgrown, 3-nm-thick, hafnium-silicate films containing ∼12at.%Hf indicate a large number of bulk and interface traps with a current density of ∼10⁻² A/cm² at V_FB+1 V. Post-ultraviolet (UV)/O₃ oxidation annealing in N₂ at 350°C for 30 min leads to a significant improvement in the electrical characteristics of the film. A post-metallization anneal (PMA) at 450°C for 30 min in forming gas (90% N₂:10% H₂), however, degraded the electrical properties of the films. X-ray photoelectron spectroscopy (XPS) analyses of the forming-gas-annealed films indicate that a possible cause for the degradation in electrical properties is the hydrogen-induced reduction of GeO₂ in the interfacial Si_xGe_1−xO₂ oxide layer to elemental germanium. Implications for the introduction of hafnium silicate as a viable gate dielectric for SiGe-based devices are discussed.     

On the inclusion of geographic information systems (GIS) in global navigation satellite systems (GNSS)

The latest innovation of the global navigation satellite systems (GNSS) technologies plays an important role in improving the quality and safety of modern life. Most of the applications evolved from the integration between GNSS, geographical information systems (GIS) and wireless communications and networking (WCN) systems. The wide spread applications that are using these technologies include: the automatic vehicle location (AVL), tracking systems, navigation systems, pedestrian navigation systems, intelligent transportation systems, precise positioning, and emergency callers, among others. The location‐based services (LBS) are possible only by the combination of GNSS, GIS and WCN. The growing need for commercial LBS has forced cellular‐phone and network manufacturers to concentrate on positioning solutions, which are even more precise than the regulatory mandates for positioning of emergency callers and other user services and applications. In this paper, we will present a literature review of the GNSS, the three satellite systems GPS, GLONASS and Galileo, which are aimed to support GNSS services, and a comparison between them and their role in creating a GIS. Copyright © 2006 John Wiley & Sons, Ltd.     

新型无铅压电陶瓷NBT-NBSN的研究

采用传统陶瓷制备方法,制备出一种钙钛矿结构无铅新压电陶瓷材料(1-x)(Na1/2Bi1/2)TiO3-x(Na1/2Bi1/2)(Sb1/2Nb1/2)O3(x=0~1.4%,摩尔分数)。研究了(Na1/2Bi1/2)TiO3(NBT)陶瓷B位复合离子(Sb1/2Nb1/2)4 取代对介电和压电性能的影响。X-射线衍射分析表明,所研究的组成均能形成纯钙钛矿(ABO3)型固溶体。陶瓷材料的介电常数-温度曲线显示陶瓷在升温过程中存在两个介电常数温度峰,不同频率下陶瓷材料的介电常数-温度曲线显示该体系材料具有明显的弛豫铁电体特征。检测了不同组成陶瓷的压电性能,发现材料的压电常数d33、厚度机电耦合系数kt和介电常数rε随着x值的增加先增加后降低,在x=0.8%时,陶瓷的d33=97 pC/N,kt=0.50,为所研究组成中的最大值,介电损耗tanδ则随x值的增加而增加。     

Analysis of a novel (LCR)trap-LC-RC filter with improved performance for standalone inverters

ABSTRACT

This work introduces a new passive filter structure for a pulse width modulated inverter used in standalone applications. The proposed structure consists of an additional capacitor connected across the resistance-capacitance branch of the traditional LCR filter and an additional resistor connected across the trap filter capacitor in the traditional (LC)_trap-LCR filter configuration which helps to reduce damping power loss and increase harmonic attenuation while maintaining the same overall filter size of conventional filters. A comprehensive parameter design procedure of the proposed filter is introduced which considers inverter switching frequency and choice of damping components. Further, particle swarm optimisation algorithm is newly employed in this work to minimise resonant peaking on the premise of allowable values of overall filter inductance, capacitance and resistance. Simulation and experimental results are presented to analyse the performance of the proposed filter and a comparison is established with other passive filter topologies. A five-level inverter with the proposed filter is implemented using a SPARTAN- 6 XC6SLX25 processor on an experimental set-up. The experimental results show an attractive performance of the proposed filter in providing improved inverter output waveforms, significant harmonic reduction in the high-frequency band, reduced resonant peaking, lesser harmonic distortion and lower damping power loss.