溶胶凝胶生长(111)择优取向的MgO薄膜

用一种简单的方法制得MgO的前驱溶液并用溶胶凝胶法在Si（100）和Si（111）衬底上制备出（111）择优取向的MgO薄膜.使用X射线衍射曲线、摇摆曲线、原子力显微镜图来研究薄膜的微结构与基板取向、退火温度、薄膜厚度之间的关系.结果表明，在退火温度高于500℃时结晶，Si衬底的取向对MgO薄膜的取向没有显著影响.同时，退火温度的升高和薄膜厚度的增加都能使MgO（111）的择优取向性越来越好;Si的易氧化是导致镁醇盐经过高温分解结晶形成MgO（111）择优取向的主要原因.     

退火温度及基片晶向对（Zn1-xCox）2-W薄膜结构和磁性能的影响

采用射频磁控溅射法在Si（100）和Si（111）基片上沉积的六角铁氧体（Zn1-xCox）2W薄膜,利用XRD（X射线衍射仪）物相分析证明Si（111）基片有利于C轴垂直膜面生长,且在950℃退火时,薄膜结构较好。SEM（扫描电镜）分析表明,晶粒尺寸随着温度升高而变大,950℃退火时薄膜出现六角结构,温度过高出现缺陷;而Si（100）基片上的薄膜在950℃退火时则出现大的裂痕,这影响薄膜的磁性能。采用VSM（振动样品磁强计）测量了垂直膜面饱和磁化强度Ms⊥,在950℃退火时,Si（111）基片上的薄膜垂直饱和磁化强度较大。     

Si3N4/（Cu，Nb）/Ni/Inconel600高温合金部分液相扩散连接接头的组织与力学性能

为了在较低的连接温度、连接压力和连接时间下获得高温稳定性好的陶瓷/金属接头，通过设计非对称中间层（Cu，Nb）/Ni，在连接温度为1403K/1373K，连接时间为50min，连接压力为7.5MPa，冷却速度为10K/min的工艺条件下，采用真空扩散连接设备，进行了Si₃N₄/Inconel600高温合金接头的部分液相扩散连接（Partial Liquid Phase Diffusion Bonding，PLPDB）.接头的强度通过剪切试验评价，接头组织形态采用扫描电子显微镜（SEM）进行了观察和分析.实验结果表明，Cu，Nb配比、（Cu，Nb）层的厚度和连接温度影响接头的组织形态、强度与断裂.在连接温度为1403K时，Cu，Nb配比增加，接头中的孔洞缺陷减小，接头强度提高，断裂位置从陶瓷/中间层界面向陶瓷转变.当连接温度为1403K，Cu，Nb配比为10，(Cu,Nb)层厚度不超过0.2mm时，随着(Cu,Nb)层厚度的增加，接头强度提高.当连接温度从1403K降到1373K时，接头强度明显提高.     

SbN4／（Cu，Nb）／Ni／Inconel 600高温合金部分液相扩散连接接头的组织与力学性能

为了在较低的连接温度、连接压力和连接时间下获得高温稳定性好的陶瓷／金属接头，通过设计非对称中间层（Cu，Nb）／Ni，在连接温度为1403K／1373K，连接时间为50min，连接压力为7．5MPa，冷却速度为10K／min的工艺条件下，采用真空扩散连接设备，进行了Si3N4／Inconet600高温合金接头的部分液相扩散连接（partial liquid phase diffusion bonding，PLPDB）．接头的强度通过剪切试验评价，接头组织形态采用扫描电子显微镜（SEM）进行了观察和分析．实验结果表明，Cu，Nb配比、（Cu，Nb）层的厚度和连接温度影响接头的组织形态、强度与断裂．在连接温度为1403K时，Cu，Nb配比增加，接头中的孔洞缺陷减小，接头强度提高，断裂位置从陶瓷／中间层界面向陶瓷t转变．当连接温度为1403K，Cu，Nb配比为10，（Cu，Nb）层厚度不超过0．2mm时，随着（Cu，Nb）层厚度的增加，接头强度提高．当连接温度从1403K降到1373K时，接头强度明显提高．     

离子辅助沉积对TiO2薄膜应力的影响

对在离子辅助沉积（IAD）和常规工艺条件下镀制的TiO2薄膜的应力进行了试验研究，并探讨了利用台阶仪测量镀膜前后基板表面曲率的方法。结果表明，当基板温度低于100 ℃时，在离子辅助沉积工艺条件下镀制的TiO2薄膜的应力略大于在常规工艺条件下镀制的薄膜的应力；随着薄膜厚度的增加，TiO2薄膜应力逐渐减小，从125 nm的392 MPa下降到488 nm的30 MPa；离子源阳极电压对薄膜应力影响较大，在100 V时薄膜应力为164 MPa，当电压升高到190 V时，应力下降到75 MPa。     

磁控溅射Cu薄膜退火过程中的织构演变行为

利用磁控溅射法在单晶Si基底上制备了Cu薄膜,通过分析薄膜退火前后的X射线衍射图谱、取向分布函数图、微观组织和背散射电子衍射数据,揭示了薄膜在退火过程中的织构演变行为.结果表明：采用低溅射气压制备的Cu薄膜具有较强的{111}纤维织构,沉积态Cu薄膜内部存在大量的小角度晶界和Σ3晶界,经过200℃退火后,小角度晶界减少,而Σ3晶界增加,出现了退火孪晶,释放了薄膜内部的弹性应变能,阻碍了{001}纤维织构的形成,使得沉积态和退火态下的Cu薄膜织构特征没有明显变化,均以{111}纤维织构为主.     

磁控溅射法生长ZnO薄膜的结构和表面形貌特性

采用射频磁控溅射方法,在Si（111）和玻璃基片上制备ZnO薄膜。研究衬底温度和基片类型对薄膜结构、表面形貌的影响。结果显示,所有ZnO薄膜沿c轴择优生长,同种基片类型上生长的薄膜,随着衬底温度升高,（002）衍射峰强度和表面粗糙度增高;相同衬底温度下生长的ZnO薄膜,Si基片上制备的薄膜（002）衍射峰强度和表面粗糙度小于玻璃片上的。基片类型影响薄膜应力状态,玻璃片上制备的ZnO薄膜处于张应变状态,Si基片上的薄膜处于压应变状态;对于同种基片类型上生长的ZnO薄膜,衬底温度升高,应力减小。Si衬底上、300℃下沉积的薄膜颗粒尺寸分布呈正态。     

退火温度对硅基硬质碳膜内应力和硬度的影响

硬质碳膜中应力的存在限制了其应用,真空退火是降低内应力的有效措施.本文利用BGS6341型电子薄膜应力分布测试仪和HXD-1000型数字式硬度计,对在硅基片上用非平衡磁控溅射制备的碳膜应力和硬度随退火温度的变化进行了研究.研究结果表明:随退火温度的升高,碳膜平均应力减小,分布趋向均匀,但硬度下降;在退火温度300℃下平均应力减小为-2.29×108Pa,膜的硬度变化不明显,维氏硬度从4780.3589 MPa降到4194.099 MPa(类似于类金刚石(DLC)),此退火温度下保证了薄膜具有很小的内应力同时具有较高的硬度.     

再结晶退火温度对无取向硅钢织构和磁性能的影响

对冷轧及退火后无取向硅钢织构及磁性能的变化进行研究。借助电子背散射衍射（EBSD）技术测量退火试样的极图,计算取向分布函数（ODF）和织构组分的体积分数,并利用TYU-2000M磁性能测量仪测量试样的磁性能。结果表明,810、840、880℃下退火3min后,试样的再结晶均充分完成,且晶粒随着退火温度的升高而长大;退火后,试样中首先显现{111}〈112）织构组分,且随退火温度的升高呈增强趋势;退火温度继续升高时,{111}〈110〉织构组分增强,一次再结晶后材料中出现{111}面织构,导致试样的磁感应强度B50降低,同时由于晶粒的长大使得试样的铁损P15减小。     

降低DLC薄膜应力的方法研究

为了沉积出高硬度、低应力、高膜-基结合强度的类金刚石硬质薄膜,利用脉冲电弧离子镀技术在高速钢基底上制备类金刚石薄膜,采用退火、增加Ti过渡层、Ti离子轰击等方法减小DLC薄膜应力.结果表明:单层DLC薄膜的应力可达7.742 GPa;以Ti为过渡层的DLC薄膜的应力减小为2.027 GPa;对Ti/DLC薄膜进行退火热处理,薄膜应力减小到0.359GPa.利用Ti作过渡层,并且对薄膜进行退火处理,可以使DLC薄膜产生的高应力在Ti层中得到明显减小,提高膜-基结合力,增加硬度.     

Effect of Dy substitution on the microstructure and magnetic properties of nanograin Nd-Fe-B single-phase alloys

Nanocrystalline single-phase alloys with the nominal compositions (at%) of Nd12.3-xDyxFe79.7Zr0.8Nb0.8Cu0.4B60 (x=0, 0.5,1.5, and 2.5) were prepared by melt-spinning and subsequent annealing. X-ray diffraction analysis shows that the as-spun ribbons were mainly com-posed of the amorphous phase. A slight content of Dy stabilizes the amorphous phase during annealing treatment. The grain size becomes smaller and the coercivity of the annealed ribbon is gradually improved with the increase of Dy content. Excessive Dy is harmful to the re-manence. It is found that no intergranular phase exists between the grains by high-resolution transmission electron microscopy, and the grain boundaries are crystallographically coherent in the optimally annealed sample. The optimum magnetic properties of remanence (Jr=1.09 T), coercivity (Hci=1048 kA/m), and maximum magnetic energy product ((BH)m=169.5 kJ/m3) are obtained from the x=0.5 ribbon in a post heat-treated state (700℃, 10 min).     

超薄MoN扩散阻挡层的扩散阻挡性能分析

采用磁控溅射法,制备了超薄MoN扩散阻挡层,并对Cu／MoN／Si体系进行真空退火。用四点探针（FPP）、X射线衍射（XRD）、场发射扫描电子显微镜（FESEM）进行薄膜电性能和微结构表征。分析结果表明,MoN作为Cu扩散阻挡层结构具有良好的热稳定性,失效温度达到600℃,明显优于Mo扩散阻挡层。     

铝和铜互连线的晶粒结构及残余应力研究

采用X射线衍射仪和扫描探针显微镜,观察和测量了分别由大马士革工艺制备的Cu互连线和由反应刻蚀工艺制备的Al互连线的晶粒结构和应力状态.大马士革工艺凹槽中的Cu互连线受到机械应力的影响,使Cu互连线的晶粒尺寸(45~65 nm)小于Al互连线的晶粒尺寸(200~300 nm);Cu互连线(111)的织构强度(2.56)低于Al互连线(111)的织构强度(15.35);Cu互连线沿线宽方向的应力σ22随线宽的减小而增加,即沉积态和退火态的Cu互连线的σ22由73和254 MPa(4μm线宽)分别增加到104和301 MPa(0.5μm线宽).Cu互连线和Al互连线的流体静应力σ均为张应力.Al互连线的主应力σ11、σ22和σ33随Al膜厚度的减小而增加.退火使Al互连线的σ11、σ22和σ33降低,表明Al互连线中的残余应力主要为热应力.     

Preparation and characterization of nanocrystalline SnO2 thin film by electrodeposition technique

A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnO2 thin films was proposed with current density of 8 mA/cm2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0.03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150 ℃ for 10 h.     

CdS/Cu2O太阳能电池的制备及膜厚对光电性能的影响

采用水浴法和电沉积法制备CdS/Cu2O复合膜,组装成异质结薄膜太阳能电池。通过改变薄膜的厚度,测试了不同厚度的窗口层和吸收层对太阳能电池性能的影响。实验表明,在400 nm厚的CdS薄膜上沉积30次Cu2O薄膜,所获得的复合膜具有最大的填充因子FF(为0.42)和光电转换效率η(0.05%)。并通过实验发现,适当减少CdS窗口层的厚度,可以提高光的透射率,产生更多的光生载流子,提高了光电转换效率。适当增加Cu2O吸收层的厚度,可以提高光的吸收率,产生更多的光生载流子,提高了光电转换效率。     

Effect of Cu doping and annealing treatment on the microstructure and magnetic properties of nanocrystalline single-phase Nd-Fe-B alloys

The effects of Cu addition and annealing treatment on the magnetic properties and microstructure of Nd12.3Fe81.7-xCuxB6 (x=0-1.2) ribbons melt-spun and annealed were systematically investigated by the methods of vibrating sample magnetometer (VSM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Optimum magnetic properties were achieved by annealing melt-spun Nd12.3Fe81.5Cu0.2B6 ribbons at 550°C for 15 min, which only contained Nd2Fe14B phase. The remanence, coercive force, and maximum ...     

Oriented Growth of PZT thick film embedded with PZT nanoparticles

This paper reports that dense and crack-free(100)oriented lead zirconate titanate(Pb(Zr0.52Ti0.48)O3,PZT)thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive.The thick film possesses single-phase perovskite structure and perfectly(100)oriented.The(100)orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest.The(100)orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing.The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest(100)orientation degree,which is 82.3%.     

YIG thin film for RF integrated inductor

The yttrium iron garnet(YIG) thin films prepared by the sol-gel method and rapid thermal annealing(RTA) process for integrated inductor are investigated. The X-ray diffraction(XRD) results indicate that the YIG film annealed above 650 ℃ is poly-crystalline with single-phase garnet structure. Moreover, it can be found that the initial permeability μi, saturation magnetization M_S and coercivity H_c of these YIG films increase with increasing RTA temperature. Low temperature annealing after crystallization can further improve the magnetic properties of YIG film. Thereby, a planar integrated inductor in the presence of Si substrate/SiO_2 layer/Y_(2.8)Bi_(0.2)Fe_5O_(12) thin film/Cu spiral coil structure is fabricated successfully by the standard IC processes. Due to the magnetic enhancement originated from YIG film, the inductance L and quality factor Q of the inductor with YIG film are improved in a certain frequency range.     

Effect of annealing on the characteristics of Au/Ni50Fe50 bilayer films grown on glass

Sputter-deposited Au/Ni_(50)Fe_(50) bilayer films were annealed in a vacuum of 5×10~(-4) Pa at 523 to 723 K for 30 or 90 min. The characteristics of the bilayer films were determined by Auger electron spectroscopy, field emission scanning electron microscopy, X-ray diffractometry, a four-point probe technique, and an alternating gradient magnetometer. When the annealing temperature and time reached 723 K and 90 min, Ni and Fe atoms markedly diffused into the Au layer. The grain size of the Au layer did not change markedly with the annealing condition. As the annealing time was 30 min and the annealing temperature exceeded 573 K, the resistance of the bilayer film increased with increasing the annealing temperature. Furthermore, the resistance of the bilayer film annealed at 723 K for 90 min was lower than that of the bilayer film annealed at 723 K for 30 min. All the bilayer films showed magnetic hysteresis loops. The as-deposited bilayer film showed a hard magnetization. The bilayer film represented an easy magnetization with increasing the annealing temperature. The Au/Ni_(50)Fe_(50) film that annealed at 723 K for 90 min had the lowest saturation magnetization.     

退火处理对Ti-Zr-Cu-Be块体非晶合金力学性能的影响

采用铜模铸造法制备了直径为2mm的Ti55-xZr10+xBe27.5Cu7.5(x=0,10,20)块体非晶合金,并对其进行等温退火处理.利用X射线衍射(XRD)、扫描电镜(SEM)、差氏扫描量热仪(DSC)及压缩试验等方法研究了非晶合金的相结构、显微组织和热稳定性,以及退火处理对其力学性能的影响.结果表明:该系列合金在553 K及583 K下保温长达5 h时间内依然表现为非晶态.退火处理后,Ti35Zr30Be27.5Cu7.5合金屈服强度、断裂强度均提到了提高,其中在583 K下保温1 h后屈服强度、断裂强度分别达到了1 921、2 169 MPa;其塑性由处理前的3.47%提高到了6.57%.Ti45Zr20Be27.5Cu7.5合金在退火后其力学性能变化不明显.Ti55Zr10Be27.5Cu7.5合金随着退火温度及保温时间的增加其屈服强度、断裂强度及塑性均明显降低.