A prototype of very high resolution small animal PET scanner using silicon pad detectors

A very high-resolution small animal positron emission tomograph (PET), which can achieve sub-millimeter spatial resolution, is being developed using silicon pad detectors. The prototype PET for a single slice instrument consists of two 1 mm thick silicon pad detectors, each containing a 32×16 array of 1.4×1.4 mm pads readout with four VATAGP3 chips which have 128 channels low-noise self-triggering ASIC in each chip, coincidence units, a source turntable and tungsten slice collimator. The silicon detectors were located edgewise on opposite sides of a 4 cm field-of-view to maximize efficiency. Energy resolution is dominated by electronic noise, which is 0.98% (1.38 keV) FWHM at 140.5 keV. Coincidence timing resolution is 82.1 ns FWHM and coincidence efficiency was measured to be 1.04×10⁻³% from two silicon detectors with annihilation photons of ¹⁸F source. Image data were acquired and reconstructed using conventional 2-D filtered-back projection (FBP) and a maximum likelihood expectation maximization (ML-EM) method. Image resolution of approximately 1.45 mm FWHM is obtained from 1-D profile of 1.1 mm diameter ¹⁸F line source image. Even better resolution can be obtained with smaller detector element sizes. While many challenges remain in scaling up the instrument to useful efficiency including densely packed detectors and significantly improved timing resolution, performance of the test setup in terms of easily achieving sub-millimeter resolution is compelling.     

High resolution silicon detectors for colliding beam physics

Resolution and linearity of the position measurement of Pisa multi-electrode silicon detectors are presented. The detectors are operated in slightly underdepleted mode and take advantage of their intrinsic resistivity for resistive charge partition between adjacent strips. 22 μm resolution is achieved with readout lines spaced 300 μm. Possible applications in colliding beam experiments for the detection of secondary vertices are discussed.     

基于波束域MUSIC方法的高分辨方位估计

现代声纳系统普遍采用水听器基阵和一定的信号处理来提高对目标的检测和定位能力，而基阵的波束形成则在其中起着核心作用。文中研究了窄带波束域高分辨方位估计技术，分析了波束域MUSIC方位估计的构造过程和具体实现方法。仿真计算表明，基于波束域MUSIC的方位估计算法是一种分辨空间小角域内多个目标的有效方法。     

Detection for high resolution radars

Abstract

In this paper we discuss detection problems for a high resolution radar. Fluctuation in the target radar cross section usually decreases the probability of detection. However, through integration of cells within range profiles of a high resolution radar, variation of the integrated magnitude with respect to the change of carrier frequency and target aspect becomes much smaller, and this is helpful for improving the probability of detection. Two detection algorithms, the cell integration method and the correlation method, for a high resolution radar are proposed, and their detection performances are compared with that obtained by a conventional low resolution radar. Some theoretical formulations are developed. Simulation results show the effectiveness of the proposed algorithms.     

A wurtz-like reaction to silicon nanowires

Silicon nanowires have been successfully synthesized via wurtz-like reaction, using silicon tetrachloride and sodium in the presence of Co/Ni catalyzer at 500 °C In this process the sodium was used as reductant and flux. Transmission electron microscopy (TEM) shows that the nanowire cluster is about 10 nm in diameter and length up to several microns, and well aligned along their longitude direction. High-resolution transmission electron microscopy (HRTEM) images demonstrates that as-synthesized nanowires interlayer spacing are around 0.31 nm, corresponding well to the (111) lattice parameter of diamond-like crystalline silicon. Based on the experimental results, the possible wurtz reaction mechanism of the silicon nanowires (SiNWs) has been properly proposed.     

Energy and spatial response of silicon strip detectors to X-rays

This paper describes an experimental investigation of the energy and spatial response of silicon strip detectors used for X-ray measurements. The measurements of single strip amplitude distributions have been performed for a p⁺–n silicon strip detector irradiated with X-rays for different detector bias voltages and for two measurements geometries (with the detector irradiated from either the strip side or from the ohmic contact side). The measured amplitude distributions have been compared with those obtained from simulations using the developed simulation package. The spatial response of the detector has been measured by scanning an edge across the strips and measuring the corresponding strip count rate. The measured spatial response has been compared with that obtained from simulations.     

A simple model of radiation swelling of silicon

The radiation swelling of silicon is explained as a diffusion-like process where the flux of interstitials out of the plane is defined by the gradient of the concentration of interstitials and the gradient of mechanical stresses in the ion-implanted region of the solid. This model was applied to describe the dynamics and the main regularities (dependence of strain on the ion flux density, ion energy, substrate temperature) of ion implanted silicon (Ni⁺, E = 40–160 keV, j = 5–180 μA cm⁻²). It is demonstrated that suppression of radiation swelling at high temperatures of the substrate or high ion beam current density can be explained by the annihilation of radiation defects.     

Energy analyzer for spectrometers with high spatial resolution

A new energy analyzer compatible with high spatial resolution spectrometers is proposed. The analyzer accepts electrons emitted with polar angles from 90.5° to 98.5° in the full azimuth range. A position-sensitive detector collects these electrons in the parallel mode of registration by 30 virtual channels; each channel has the resolution of 0.2% and the entrance solid angle of 0.87 steradians. The proposed analyzer provides high lateral resolution due to its compatibility with extremely short-focused microscope lenses, and, at the same time, the system offers high spatial resolution in the normal direction due to its ability to register electrons emitted with grazing angles.     

A high resolution water soluble fullerene molecular resist for electron beam lithography

Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20?keV electrons is 1.5 × 10(-2)?C?cm(-2). Arrays of lines with a width of 30-35?nm and pitches of 200 and 400?nm, and arrays of dots with a diameter of 40?nm and a pitch of 200?nm have been patterned at 30?keV. The etch durability of this resist was found to be ～2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.     

A device to measure the effects of strong magnetic fields on the image resolution of PET scanners

Very high resolution images can be achieved in small animal PET systems utilizing solid state silicon pad detectors. As these systems approach sub-millimeter resolutions, the range of the positron is becoming the dominant contribution to image blur. The size of the positron range effect depends on the initial positron energy and hence the radioactive tracer used. For higher energy positron emitters, such as and , which are gaining importance in small animal studies, the width of the annihilation point distribution dominates the spatial resolution. This positron range effect can be reduced by embedding the field of view of the PET scanner in a strong magnetic field. In order to confirm this effect experimentally, we developed a high resolution PET instrument based on silicon pad detectors that can operate in a 7 T magnetic field. In this paper, we describe the instrument and present initial results of a study of the effects of magnetic fields up to 7 T on PET image resolution for and point sources.     

A comparative micro-cantilever study of the mechanical behavior of silicon based passivation films

A comprehensive study on the mechanical behavior of plasma enhanced chemical vapor deposited silicon oxide, oxynitride and nitride thin films is provided. Hardness, Young's modulus, yield stress, fracture stress and fracture toughness values are determined by the nanoindentation and the micro-cantilever deflection technique. The micro-cantilever deflection technique is discussed in terms of measurement accuracy and reproducibility and the results are compared with standard nanoindentation measurements. Correlations between the yield and fracture behavior, which have been observed for glass fibers, are discussed in this paper for dielectric thin film glasses.     

A facile synthesis of silicon carbide nanoparticles with high specific surface area by using corn cob

Corn cob, which possesses low ash and high carbon contents, is a common waste material that accounts for a large amount of agricultural waste. This paper reports about a facile method to synthesize silicon carbide (SiC) nanoparticles with high specific surface area by using corn cob as a carbon source. The method is accomplished by carbothermal reduction at 1350?°C using corn cob as carbon source and silicon monoxide as silicon source. Fourier transform infrared (FT-IR) and Raman spectra results confirmed the formation of synthesized SiC particles. X-ray diffraction (XRD) results indicated the major phases of 3C-SiC. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images showed that the SiC particle size is in the range of 40–100?nm and mainly composed of sphere-shaped nanoparticles. The Brunauer–Emmett–Teller (BET) specific surface area of samples is 80.25?m²/g. In addition, we proposed the formation mechanism of SiC nanoparticles with high specific surface area by adsorption and vapor–solid mechanism. This facile method for synthesizing SiC nanoparticles provides a new idea for high-value application of corn cobs and new raw material for the preparation of silicon carbide.     

Visible light emission from silicon dioxide with silicon nanocrystals

An electroluminescent MOS structure was developed using silicon wafers covered by thermal silicon dioxide containing silicon nanocrystals. Efficiency of the structure was sufficient for observation to be possible with the naked eye in daylight conditions under DC polarization. Silicon nanocrystals were produced using silicon ion implantation followed by subsequent annealing at 1100 °C in a nitrogen atmosphere. Three separate bands of emitted light at wavelengths of ∼400-500 nm (blue), ∼500-600 nm (green), and ∼650-850 nm (red) were observed and found to be related to specific regions of the implanted silicon concentration profile. For a single energy implant, each of the emitted light bands originated from a separate depth region of the silicon dioxide layer containing silicon nanocrystals. The spectrum of the emitted light was found to depend on the excess silicon concentration profile. For practical applications, the color of the emitted light can be controlled by adjustment of the implantation parameters and MOS structuring process.     

A solid state microdosimeter based on a monolithic silicon telescope

A monolithic silicon telescope, consisting of a DeltaE and an E stage-detector ( approximately 1.9 microm and 500 microm thick, respectively), was coupled to a polyethylene converter in order to investigate the feasibility of a solid state microdosimeter with respect to the field-funnelling effect. This work discusses the preliminary results of an analytical approach for the correction of a spectrum measured with this silicon-based microdosimeter for tissue-equivalence and geometrical effects. The device was irradiated with 2.7 MeV monoenergetic neutrons at the INFN-Laboratori Nazionali di Legnaro (Legnaro, Italy). The non tissue-equivalence of silicon was corrected by exploiting the signals generated in the E-stage. The correction for the sensitive volume geometry was optimised by taking into account the track length distribution of the recoil-protons generated in the converter. The derived dose distribution of the energy imparted per event was compared to the one measured with a cylindrical tissue-equivalent proportional counter (TEPC). The agreement is satisfactory.     

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiN_x:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl₄/NH₃/H₂/Ar. The active nc-Si/SiN_x:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnO_x:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.     

Silicon beam telescope for CMS detector tests

A beam telescope providing precision track measurements as reference for other detectors has been upgraded in the CERN H2 test beam. The apparatus was completely rebuilt from the detector wafers and front-end electronics to the data acquisition system. The new detector setup consists of eight 5.6×5.6 cm² sized DC coupled silicon microstrip detectors. Typical position resolution values of about 7.5 μm were measured. Details of the setup are described and results from the recent beam tests are reported.     

Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

In this work we demonstrate the electron beam induced current (EBIC) contrast of dislocations in semi-insulating (SI) bulk SiC single crystals. Our investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. This type of screw dislocations are harmful for high resolution radiation detectors and should be eliminated by improving the crystal qualities. Chemical etching in molten KOH was used for dislocation mapping in the test structures and to correlate EBIC contrast with dislocations. The EBIC contrast found in our study in SI SiC is discussed.     

High-pressure plastic flow in silicon: A first-principles theoretical study

Summary Microindentation experiments have recently shown that silicon can exhibit plastic flow when subjected to high pressure. Assuming that under these conditions the relevant reference structure is the -Sn high-pressure phase of silicon, we apply the magic-strain concept to explore the space of configurations that could describe the observed behavior. We use first-principles total-energy calculations (including full relaxation of the atomic basis for every structure) to evaluate the relevance of strained configurations. Using this approach, we were able to identify a low-energy path that corresponds to planar flow of the atoms. The atomic configurations along this path provide insight into possible microscopic motions under high pressure that may be relevant to plastic flow in silicon.     

六角相GaN外延膜的高分辨X射线衍射分析研究

通过实例介绍运用高分辨X射线衍射分析技术对GaN异质外延薄膜材料的微结构进行研究，希望能获得不同缓冲层生长与优化工艺以及结构模型对其结构特性参数影响方面的信息，为GaN材料和器件制备者提供有用的参考。     

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

In this paper, agglomeration phenomena of amorphous Si (α-Si) films due to high energy density excimer laser irradiation are systematically investigated. The agglomeration, which creates holes or breaks the continuous Si film up into spherical beads, is a type of serious damage. Therefore, it determines an upper energy limit for excimer laser crystallization. It is speculated that the agglomeration is caused by the boiling of molten Si. During this process, outbursts of heterogeneously nucleated vapor bubbles are promoted by the poor wetting property of molten silicon on the SiO₂ layer underneath. The onset of the agglomeration is defined by extrapolating the hole density as a function of the energy density of the laser pulse. A SiO₂ capping layer (CL) is introduced on top of the α-Si film to investigate its influence on the agglomeration. It is found that effects of the CL depend on its thickness. The CL with a thickness less than 300 nm can be used to suppress the agglomeration. A thin CL acts as a confining layer and puts a constraint on bubble burst, and hence suppresses the agglomeration.