一种卫星移动通信双极化微带贴片天线

为适应卫星移动通信中天线低剖面要求,设计了一种缝隙耦合馈电的双极化微带贴片天线。该天线为多贴片堆栈形式,双线极化通过H型缝隙进行耦合馈电,在贴片的上方辅以寄生贴片,以提高天线的增益和辐射效率。通过对影响天线性能的各个参数进行优化,垂直和水平极化双端口的驻波比在＜2时,分别覆盖22%和30.6%的带宽,端口隔离度＜30 dB,波束宽度均＞70°。该设计天线可作为固定波束或相控阵天线进行卫星通信。     

一种双极化宽带相控阵贴片天线的设计

相控阵天线是由相位来控制波束指向的阵列天线,大带宽、双极化等特性是相控阵天线的特点.L型馈电和孔径耦合贴片天线带宽可达20％,但是一致性差,并且隔离度不高.针对上述问题,文章分析、改进了一种H缝隙的贴片天线并将之应用于相控阵领域,计算和测试结果表明:该种形式的双极化贴片天线完全可以应用于低剖面且具有较大带宽的相控阵天线,具有较大的实际应用价值.     

新型Ka频段宽角扫描圆极化相控阵天线

提出了一种新型的Ka频段圆极化相控阵天线。天线单元以单馈电开槽贴片天线为基础实现圆极化,通过微带贴片表面加载介质和辅助辐射器,展宽了天线波束宽度并优化了单元轴比。以该天线为阵列单元,采用顺序旋转布阵技术优化得到的2×2子阵,其辐射方向图具有良好的旋转对称性,由该子阵扩展形成的相控阵天线,有效地实现了圆极化宽角扫描特性。以8×8矩形阵列为例,仿真分析了此类二维相控阵天线波束扫描过程中的方向图和极化特性。研究结果表明,天线在工作频段内可实现方位360°、俯仰±60°扫描,扫描范围内天线增益波动和轴比均小于3 dB,同时该天线具有低剖面（高度尺寸为0.08λ0,λ0为空气介质波长）、结构简单、易于加工和集成等特点,非常适合小型化或一体化相控阵天线系统应用。     

一种宽带小型化相控阵天线单元的研究

设计了一种可用于工程化实际生产的宽带小型化相控阵槽线天线单元,其天线单元采用与半波阵子相结合的槽线天线馈电形式,可工作于400 MHz～ 900 MHz的带宽之内.天线单元的横向和纵向尺寸只有大约0.2个最低频工作波长,符合天线小型化的需求.仿真结果表明:该天线在2.25倍的工作带宽之内匹配和辐射特性良好,具有体积小、剖面低、频带宽和结构简单等特点,可以作为宽带小型化相控阵天线单元.     

四点馈电的双极化单层微带背腔天线

设计了双线极化的3单元线阵天线及其馈线网络。利用四点馈电结构提高微带贴片单元的极化纯度,加载背腔提高其工作带宽,在贴片上引入环形槽缝进一步提高阻抗匹配,采用各馈点单独匹配技术消除小阵中无法忽略的边缘效应,并在馈电过渡结构上做了一系列加固设计。对两块实物的测试表明,该天线阻抗带宽超过21%,交叉极化低于-30d B,辐射效率不低于85%。本天线具有剖面低、抗振性强、架设简便等优点,具有很好的工程应用价值。     

一种贴片阵列天线散射减缩的新技术

引入贴片天线单元渐变开槽的方式来设计低散射阵列天线.通过对不同的单元开不同尺寸的槽,在等幅度馈电的情况下实现远区辐射场的低副瓣特性.对开槽贴片单元进行散射减缩预估,然后将该方法应用于1×9渐变开槽贴片阵列的设计中,与传统阵列天线的单元形式完全一样,采用不等幅馈电实现泰勒远区辐射场相比,该方法不仅实现了远区辐射场的低副瓣,而且实现了天线模式项散射场的低副瓣,同时又兼顾了结构模式项散射场的散射减缩,从而有效地实现了阵列天线的低散射特性.测量结果与原始阵列进行比较,证明了该方法的有效性.     

高集成层积阵列天线设计

针对三维层积高集成有源阵列天线辐射单元进行了研究。文中采用包括多谐振模式、宽角阻抗匹配、改进型馈电等措施的多种扩频方式对平面贴片辐射单元进行优化设计,提出了一种高集成层积阵列天线形式。其低剖面、轻量化、高性能的特性满足了下一代高集成有源相控阵天线阵列的发展要求,具有较好的应用前景。     

一种基于5G应用的圆极化微带相控阵天线

本文提出一款应用于5G频段,可实现方位面±40°波束扫描的圆极化微带相控阵天线。该相控阵天线单元是由矩形贴片、上下介质板、缝隙耦合馈电结构、金属反射板构成。利用切比雪夫综合法的一分八不等分功分器实现相控阵天线的馈电形式。测试结果表明,阵列天线的驻波比带宽为3.25 GHz～3.69 GHz,端口隔离度大于25 dB,扫描过程中增益最大为21 dB,增益衰落小于3 dB,最大扫描角处轴比为2.89 dB。该天线具有低剖面、高隔离度、高增益以及良好的波束扫描性能等优点。     

一种应用于相控阵的圆极化宽带宽角天线

针对目前圆极化相控阵天线带宽不足、扫描角度不够大等问题,设计了一种圆极化正交四叶草天线,并做试验研究了该天线在相控阵系统中的应用情况.该天线图案涂覆在印制板正、反两面,采用同轴电缆进行馈电,结构简单易于实现,在阵列中通过单元间隔离柱实现了大角度扫描匹配以及宽带轴比特性.文中给出了该圆极化天线的仿真设计结果、天线阵列样机...     

一种用于5G的大规模MIMO天线阵设计

设计了一种用于第五代移动通信系统的大规模MIMO天线阵。该天线阵采用8×8矩形排布,天线单元采用缝隙耦合馈电的贴片形式,通过蚀刻在上层地板上的两个正交H型缝隙对辐射贴片分别耦合馈电来实现±45°双线极化特性。所设计的天线阵工作在3. 4 GHz~3. 6 GHz,具有剖面低、结构紧凑、便于与射频前端集成化设计的特点,能够很好地满足下一代移动通信系统对天线阵的设计要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.