SOI LDMOSFET的背栅特性

在绝缘体上硅衬底上,制备了栅长为0.5μm的低势垒体接触结构和源体紧密接触结构的横向双扩散功率晶体管.详细研究了器件的背栅特性.背栅偏置电压对横向双扩散功率晶体管的前栅亚阈值特性、导通电阻和关态击穿特性均有明显影响.相比于源体紧密接触结构,低势垒体接触结构横向双扩散功率晶体管的背栅效应更小,这是因为低势垒体接触结构更好地抑制了浮体效应和背栅沟道开启.还介绍了一种绝缘体上硅横向双扩散功率晶体管的电路模型,其包含前栅沟道,背栅沟道和背栅偏置决定的串联电阻.     

PDSOI nMOSFETs关态击穿特性

分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件.对这些器件的关态击穿特性进行了研究.当背栅沟道注入剂量从1.0×1013增加到1.3×1013cm-2,浮体n型沟道器件关态击穿电压由5.2升高到6.7V,而H型栅体接触n型沟道器件关态击穿电压从11.9降低到9V.通过测量寄生双极晶体管静态增益和漏体pn结击穿电压,对部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件的击穿特性进行了定性解释和分析.     

PDSOI nMOSFETs关态击穿特性

分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件.对这些器件的关态击穿特性进行了研究.当背栅沟道注入剂量从1.0×1013增加到1.3×1013cm-2,浮体n型沟道器件关态击穿电压由5.2升高到6.7V,而H型栅体接触n型沟道器件关态击穿电压从11.9降低到9V.通过测量寄生双极晶体管静态增益和漏体pn结击穿电压,对部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件的击穿特性进行了定性解释和分析.     

用于智能功率集成电路的PTG-LDMOST

提出一种用于智能功率集成电路的基于绝缘体上硅(SOI)的部分槽栅横向双扩散MOS晶体管(PTG-LDMOST)。PTG-LDMOST由传统的平面沟道变为垂直沟道,提高了器件击穿电压与导通电阻之间的折衷。垂直沟道将开态电流由器件的表面引向体内降低了导通电阻,而且关态的时候耗尽的JFET区参与耐压,提高单位漂移区长度击穿电压。仿真结果表明:对于相同的10微米漂移区长度,新结构的击穿电压从常规结构的111V增大到192V,增长率为73%。     

DSOI总剂量效应模型及背偏调控模型

总剂量辐射效应会导致绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)器件的阈值电压漂移、泄漏电流增大等退化特性。由于背栅端口的存在,SOI器件存在新的总剂量效应加固途径,对于全耗尽SOI器件,利用正背栅耦合效应,可通过施加背栅偏置电压补偿辐照导致的器件参数退化。本文研究了总剂量辐照对双埋氧层绝缘体上硅金属氧化物半导体场效应晶体管(DSOI MOSFET)总剂量损伤规律及背栅偏置调控规律,分析了辐射导致晶体管电参数退化机理,建立了DSOI晶体管总剂量效应模拟电路仿真器(SPICE)模型。模型仿真晶体管阈值电压与实测结果≤6 mV,同时根据总剂量效应模型给出了相应的背栅偏置补偿模型,通过晶体管背偏调控总剂量效应SPICE模型仿真输出的补偿电压与试验测试结果对比,N型金属氧化物半导体场效应晶体管(NMOSFET)的背偏调控模型误差为9.65%, P型金属氧化物半导体场效应晶体管(PMOSFET)为5.24%,该模型可以准确反映DSOI器件辐照前后阈值特性变化,为器件的背栅加固提供参考依据。     

一种非对称双栅应变硅HALO掺杂沟道MOSFET阈值电压解析模型

提出了一种非对称双栅应变硅HALO掺杂沟道金属氧化物半导体场效应管结构.该器件前栅和背栅由两种不同功函数的金属构成,沟道为应变硅HALO掺杂沟道,靠近源区为低掺杂区域,靠近漏区为高掺杂区域.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,分别求解了前背栅表面势、前背栅表面电场及前背栅阈值电压,建立了双栅器件的表面势、表面电场和阈值电压解析模型.详细讨论了物理参数对解析模型的影响.研究结果表明,该器件能够很好的抑制短沟道效应、热载流子效应和漏致势垒降低效应.模型解析结果与DESSIS仿真结果吻合较好,证明了该模型的正确性.     

背栅偏置对掩埋氧化层辐射感生陷阱电荷调控规律及机理北大核心

研究了辐照过程中施加背栅偏置对掩埋氧化层(BOX)辐射感生陷阱电荷的调控规律及机理。测试了130 nm部分耗尽绝缘体上硅金属氧化物半导体场效应晶体管在不同背栅偏置条件下辐射损伤规律,试验结果显示辐照过程中施加正向背栅偏置可以显著增强辐射陷阱电荷产生,而施加负向背栅偏置并不能明显抑制氧化物陷阱电荷的产生,甚至在进一步提高负向偏置时会使氧化物陷阱电荷的数量上升。通过TCAD器件模拟仿真研究了背栅调控机理,研究结果表明:尽管负向背栅偏置可使辐射感生陷阱电荷远离沟道界面,但随着BOX层厚度减薄该区域电荷仍可导致器件电参数退化,且提高负向偏置电压可进一步增强陷阱电荷产生,加剧辐射损伤。     

SOI反偏肖特基势垒动态阈值MOS特性

将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOI DTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOI DTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOI DTMOS的关态击穿特性进行了比较.     

SOI反偏肖特基势垒动态阈值MOS特性

将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOI DTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOI DTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOI DTMOS的关态击穿特性进行了比较.     

22 nm FDSOI器件的制备与背偏效应研究

提出了一种基于后栅极工艺的22 nm 全耗尽绝缘体上硅(FDSOI)器件的制备方法。基于电学测试结果,分析了器件的基本性能,研究了背栅偏压对器件性能的影响。结果表明,器件的开关电流比比较高、亚阈值摆幅较小,符合产业的一般标准。背栅偏压对长沟道和短沟道器件的阈值电压均有明显的影响。电路设计人员可以根据不同需求,选择工作在正向体偏置(FBB)模式或者反向体偏置(RBB)模式的器件。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks