磁控溅射ITO薄膜的退火处理

采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃~400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.     

Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO₂ contents (CeO₂ : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 °C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 °C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 × 10^− 4 Ωcm, which was deposited using a 3.0 wt.% CeO₂ doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 °C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

Enhanced characterization of ITO films deposited on PET by RF superimposed DC magnetron sputtering

Tin-doped indium oxide (ITO) films were deposited on polyethylene terephthalate substrates by RF superimposed DC magnetron sputtering using an ITO target composed of In₂O₃ (90 wt.%):SnO₂ (10 wt.%). The total sputtering power was maintained at 70 W and the power ratio of RF/(RF + DC) was varied from 0 to 100% in steps of 25%. The discharge voltage and deposition rate decreased with increasing RF/(RF + DC) power ratio. The ITO film deposited at a 50% RF portion of the total power showed the lowest resistivity (3.18 × 10^− 4 Ωcm), high transmittance (87.5%) and relatively good mechanical durability, which was evaluated using bending and scratch tests.     

Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity (r) and an improvement in long term stability (DV/V) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero? TCR (ppm/8C) and long term stability of better than 0.2% can be realised.     

Fluorine-doped ZnO transparent conducting thin films prepared by radio frequency magnetron sputtering

Fluorine-doped ZnO transparent conducting thin films were prepared by radio frequency magnetron sputtering at 150 °C on glass substrate. Thermal annealing in vacuum was used to improve the optical and electrical properties of the films. X-ray patterns indicated that (002) preferential growth was observed. The grain size of F-doped ZnO thin films calculated from the full-width at half-maximum of the (002) diffraction lines is in the range of 18-24 nm. The average transmittance in visible region is over 90% for all specimens. The specimen annealed at 400 °C has the lowest resistivity of 1.86 × 10^− 3 Ω cm, the highest mobility of 8.9 cm² V^− 1 s^− 1, the highest carrier concentration of 3.78 × 10²⁰ cm^− 3, and the highest energy band gap of 3.40 eV. The resistivity of F-doped ZnO thin films increases gradually to 4.58 × 10^− 3 Ω cm after annealed at 400 °C for 4 h. The variation of the resistivity is slight.     

Improved ITO thin films with a thin ZnO buffer layer by sputtering

In this paper, we report a buffering method of improving the quality of ITO thin films on glass by r.f. magnetron sputtering. By applying a ZnO buffer before the ITO deposition in the same run of sputtering, ITO films showed single (111)-oriented highly textured structure, while ITO films showed mixed-oriented polycrystalline structure on bare glass. A design of experiment was taken out to minimize the resistivity of ITO films in the deposition parameter space (oxygen ratio, total gas pressure, and temperature). Resistance measurements showed that the ITO films with ZnO buffers had a remarkable 50% decrease of resistivity comparing to those without ZnO buffers at optimized deposition condition. Room-temperature Hall effect measurements showed that the decrease in resistivity comes from a large increase of mobility and a slight increase of carrier density after forming gas annealing. The ZnO/glass may be a good alternative substrate to bare glass for producing high quality ITO films for advanced electro-optic applications.     

离子束辅助磁控溅射低温沉积ITO透明导电薄膜的研究

本文对离子束辅助磁控溅射低温沉积的ITO薄膜进行了研究,重点考察了辅助离子束能量对ITO薄膜的光电性能和晶体结构的影响。结果表明:当A r/O2辅助离子束能量为900 eV左右时能够有效改善ITO薄膜的光电性能,在从非晶到多晶的转变过程中ITO薄膜具有较低的电阻率。在聚碳酸酯(PC)基片上制备了平均可见光透过率81.0%、电阻率为5.668×10-4ohm cm、结构致密且附着力良好的ITO薄膜,基片无变形。     

Al-Mg-B thin films prepared by magnetron sputtering

Hard, nanocomposite aluminum magnesium boride thin films were prepared on Si (100) substrates with a three target magnetron sputtering system. The films were characterized by X-ray diffraction, atomic force microscope, electron micro-probe, Fourier transform infrared spectroscopy and nanoindentation. The results show that the maximum hardness of the as-deposited films is about 30.7 GPa and these films are all X-ray amorphous with smooth surfaces. The influences of substrate temperature and boron sputtering power on the quality of the films are discussed. From the results of this work, magnetron sputtering is a promising method to deposit Al-Mg-B thin films.     

On the synthesis of ultra smooth ITO thin films by conventional direct current magnetron sputtering

Highly transparent, conductive Sn-doped In₂O₃ (ITO) thin films with a characteristic root mean square surface roughness RMS below 1 nm were obtained from deposition of amorphous ITO and subsequent annealing treatment. ITO thin films with ultra flat surface were produced by (i) controlling crystallization mechanisms (nucleation and growth) of amorphous ITO through optimization of hydrogen content and temperature profile during sputtering and annealing process and (ii) preventing formation of agglomerated atoms/clusters in the gas phase and hence reducing large surface particles through fine tuning the sputtering rate and process pressure. Characterization of the coatings revealed specific resistivities below 2.5 × 10^− 4 Ω cm and transparencies above 90% in the visible range of light.     

Fabrication of transparent conducting amorphous Zn-Sn-In-O thin films by direct current magnetron sputtering

Amorphous ZnO-SnO₂-In₂O₃ films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn:In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperature were optimized during deposition. The optimal films were characterized by Hall Effect, work function and optical spectroscopy measurements. Films of 1:2:1 composition showed the lowest resistivity (7.6 × 10^− 4 Ω-cm), when deposited onto substrates preheated to 300 °C. Transmissivity of all films exceeded 80% in the visible spectral region. The energy gap was 3.52-3.74 eV, and the work function ranged 5.08-5.22 eV, suitable for cathode applications in organic light emitting diodes. Overall, the film characteristics were comparable or superior to those of amorphous tin-doped indium oxide and zinc-doped indium oxide films and may serve as viable, lower-cost alternatives.     

直流磁控溅射制备TiNxOy薄膜的性能研究

利用直流磁控溅射技术在玻璃衬底上制备了TiNxOy薄膜样品,研究了溅射过程中电压与N2流量之间的迟滞效应,通过X射线衍射（XRD）、UV-Vis分光光度计、四探针电阻仪等测试手段表征了样品的物相、光吸收谱、电阻等性能。结果表明：随着N2含量的提高和薄膜厚度的增加,XRD显示薄膜样品出现明显的衍射峰,吸收光谱向可见光方向展宽至500nm,电阻随着N2含量的提高呈逐渐下降的趋势。     

Mn-doped ZnO transparent conducting films deposited by DC magnetron sputtering

Mn-doped zinc oxide (ZnO:Mn) thin films with low resistivity and relatively high transparency were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. Influence of film thickness on the properties of ZnO:Mn films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. As the thickness increases from 144 to 479 nm, the crystallite size increases while the electrical resistivity decreases. However, as the thickness increases from 479 to 783 nm, the crystallite size decreases and the electrical resistivity increases. When film thickness is 479 nm, the deposited films have the lowest resistivity of 2.1 × 10^− 4 Ω cm and a relatively high transmittance of above 84% in the visible range.     

The growth of indium-tin-oxide thin films on glass substrates using DC reactive magnetron sputtering

The growth of indium-tin-oxide thin films as a function of thickness using DC reactive magnetron sputtering was investigated. As the film thickness grew, the crystallinity increased showing both (2 2 2) and (4 0 0) planes. However, the peak intensity ratio of I₂₂₂/I₄₀₀ in the X-ray diffraction pattern decreased with the thickness, implying a preferred orientation along the (4 0 0) planes at the higher thickness. The grain sizes and domain boundaries grew clearly and the specific resistivities decreased with the film thickness. Two components of the specific resistivities, carrier mobility and carrier concentration, showed opposite behaviour: (i) increasing carrier concentration; (ii) decreasing carrier mobility with increase in the film thickness. Furthermore, the graded growth of the ITO thin film could also be shown from the optical properties and morphological properties by UV/Vis/NIR spectroscopy and scanning electron microscopy.     

室温直流磁控溅射制备ITO膜及光电性能研究

室温条件下,在玻璃衬底上,采用直流磁控溅射法制备了ITO膜.研究了溅射压强,氧流量和溅射功率等工艺参数对薄膜光电性能的影响.结果表明当Ar流量为44.2 sccm和溅射时间20 min等参数不变时,溅射气压0.7 Pa,氧流量0.62 sccm和溅射功率130 W为最佳工艺条件.并得到了电阻率5.02×10-4 Ω·cm,在可见光区平均透过率80%以上ITO薄膜.     

Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

High rate deposition of ITO thin films at a low substrate temperature was attempted by using a facing target sputtering (FTS) system. Deposition rate as high as 53 nm/min was realized on polycarbonate film substrate of 80-μm thickness. When the film was deposited at a deposition rate above 80 nm/min, polycarbonate film substrate was thermally damaged. The film deposited by FTS has much smaller compressive film stress than the film deposited by conventional magnetron sputtering. The film stress was reduced significantly by increasing the sputtering gas pressure and stress-free films can be obtained by adjusting the sputtering gas pressure. This may be mainly caused by the fact that bombardment by high energy negative oxygen ions to substrate surface during deposition can be completely suppressed in the FTS. Film structure and electrical properties changed little with substrate position, and uniform films were obtained by the FTS.     

磁控溅射Ni-Mn-Ga薄膜的磁致应变

采用直流磁控溅射的方法,在NaCl基底上沉积了Ni-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变.结果表明,薄膜表面可见大小不一的团簇颗粒,具有明显的岛状结构,表明Ni-Mn-Ga薄膜的形成为典型的核生长型机制.热处理前的薄膜具有部分非晶存在,热处理后薄膜晶化为多晶形态.无约束薄膜在磁场下呈现负的磁致应变,在1.3T磁场下,其最大应变值可达-0.008%,并且可以完全恢复.     

Properties of zirconia thin films prepared by reactive magnetron sputtering

The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at 700 °C showed a dielectric constant ∼ 26 with interface trap densities of 1.629 × 10¹² eV^− 1 cm^− 2.     

Ellipsometry study of InN thin films prepared by magnetron sputtering

Indium nitride (InN) thin films have been deposited on Si(1 0 0) substrates at temperature of 100–400 °C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410–1100 nm. The absorption edge of the InN films is 1.85–1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.     

Amorphous indium tungsten oxide films prepared by DC magnetron sputtering

Indium-tungsten-oxide (IWO) films were prepared by dc magnetron sputtering at ambient substrate temperature (T_s). Characteristics of the films were compared with those of In₂O₃–SnO₂ (ITO) thin films prepared under the same condition. The sputter-deposited IWO films have entirely amorphous structure with an average transmittance of over 85% in the visible range and exhibit a minimum resistivity of 3.2 × 10^–4cm at W content [W/(In + W)] of 0.57 at.%. An in-situ heating X-ray diffraction measurement have shown that the crystallization temperature of IWO films is higher than those of ITO films (150–160C) and increases with increasing W content. This enabled a smooth amorphous surface of IWO films as compared with a rough surface of partially crystallized ITO films as revealed by an atomic force microscopy. IWO films are useful for transparent electrode of organic light emitting diode and polymer LCDs because of the low resistivity, high transparency and smooth surface obtainable by the conventional dc magnetron sputtering at room temperature.