单片集成430 GHz三倍频器的设计及测试

通过单片集成的方法,将工作于太赫兹频段(430GHz)的三倍频器的各个功能电路集成在厚度为12μm的砷化镓薄膜单片上,设计、制造太赫兹三倍频集成电路单片。单片结构采用一对反向并联连接的肖特基二极管,构成串联平衡式电路,电路不需要外加偏置电压。平衡式电路只产生奇数次谐波,简化了电路分析和优化过程。电路设计采用三维电磁仿真软件与谐波非线性仿真软件联合仿真场路的方法,准确模拟单片电路的射频特性。将单片电路安装在中间剖开的波导腔体内制成三倍频器进行测试,在430GHz处测得输出功率为215.7μW,效率为4.3%。     

全集成低相位噪声LC压控振荡器设计

提出了一种应用于ISM频段的低相位噪声LC VC0。电路采用TSMC 0．18μm1P6M混合信号CMOS工艺进行设计,芯片版图面积740μm×700μm。在电源电压为1．8V时,后仿真结果表明,电路工作频率为2．4GHz时,调谐范围为23％。在偏离中心频率1MHz处,相位噪声为-124．2dBc／Hz。核心部分功耗约为7．56mW。     

Monolithically Integrated DFB-EA for 100 Gb/s Ethernet

The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected $geq$100 GHz $-$3 dBe bandwidth suitable for 100 Gb/s operation with on–off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 $muhbox{m}$ resulting in $ sim$2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.      

Integrated packaging of over 100 GHz bandwidthuni-traveling-carrier photodiodes

Hybrid packaging techniques, in which the device substrate is different from the package substrate, and wire bonding or solder interconnections are used, are inadequate for ultrahigh-speed (>100 GHz) wideband applications. By employing wafer-bonding techniques, an integrated packaging (IP) technology was developed, in which devices are fabricated directly on the package substrate, and the interconnections are made as a part of the device fabrication process. This IP process was used to fabricate uni-traveling-carrier photodiodes (UTC-PD's) integrated with millimeter-wave coplanar waveguides (CPW) on package compatible sapphire with high yield. The performance of wafer-bonded UTC-PD's with 3-dB bandwidth of 102 GHz was similar to that of conventional devices, and the CPW's exhibited low dispersion     

Monolithically integrated Gunn oscillator at 35 GHz

A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.     

Monolithically Integrated Corporate-Fed Cavity-Backed Antennas

A Ka-band monolithically integrated 4 times 1 corporate-fed cavity-backed patch antenna array is demonstrated in this paper. A single antenna element has four slits introduced to extend the bandwidth to about 8%. Its gain and radiation efficiency are 6.3 dBi and 97%, respectively. A rectangular mu-coaxial line based combining network is monolithically integrated with radiating elements in a slightly modified tile configuration. Specifically, to reduce the array footprint power dividers are aligned along the array axis. Combining network has height 1/2 that of the array and feed lines do not route through the antenna elements. Overall loss of the combining network is 0.5 dB at 30 GHz. Measured reflection coefficient bandwidth and maximum gain of the fabricated 4 times 1 corporate-fed array are 13.7% and 12.73 dBi, respectively. The array is designed and fabricated in a recently developed surface micromachining process known as PolyStrata.     

一种功率型光耦合单片集成光电检测电路

针对功率型光电检测电路微弱光信号检测和功率输出的需求,研制了一种集成光电探测传感器和信号处理电路,且带功率驱动功能的单片光电检测电路.从理论上探讨了光电探测器的工艺兼容与系统噪声匹配,设计了专用的光电探测器以及适用于功率型光电集成电路(OEIC)的信号处理单元.采用B6035双极工艺,进行了版图设计和流片测试.测试结果表明,该电路的电源电压工作范围、静态功耗和传输延迟时间等综合性能优于同类型混合组装电路.     

单片集成MEMS中的阳极键合工艺

分析了阳极键合工艺的原理及其工艺条件对CMOS电路的影响，并通过理论分析和实验研究了单片集成MEMS中的两种阳极键合方法：对于玻璃在硅片上方的键合方式，通过在电路部分上方玻璃上腐蚀一定深度的腔及用氮化硅层保护电路可以在很大程度上减轻阳极键合工艺的影响；而玻璃在硅片下方的键合方式，硅片上的电路几乎不受阳极键合工艺的影响，两种方法各有优缺点。     

Monolithically integrated Yagi-Uda antenna for photonic emitteroperating at 120 GHz

A monolithically integrated photonic emitter using a uniplanar Yagi-Uda antenna is presented. By integrating a uni-travelling-carrier photodiode with the antenna, an emission of millimetre-wave signals with a power of 0.1 mW at the frequency of 120 GHz has been demonstrated experimentally     

单片集成光电探测器与接收机的协同设计

建立了光电探测器的行为模型.此模型描述了注入光功率与光生电流的关系,以及反偏电压对光生电流与结电容的影响.给出了在统一的SPICE设计环境中对光电子器件与电路协同设计的方法,并对光电探测器与CMOS接收机电路进行了设计.     

具有多波长处理功能的单片集成光探测器阵列

从理论上设计并研制了一种用于可重构光分插复用技术中的具有多波长处理功能的单片集成光探测器阵列,器件在GaAs基衬底上集成了GaAs/AlGaAs材料的法布里一珀罗谐振腔和InP-In0.53 Ga0.47 As-InP材料的PIN光探测器.为了能够实现对多路波长的探测,首先利用湿法腐蚀,改变不同区域谐振腔的厚度,然后通过二次外延完成谐振腔的生长,最后利用低温缓冲层技术在GaAs材料上异质外延高质量的InP基的PIN结构.器件的工作波长位于1500 nm左右,可实现对4路波长,间隔为10 nm的光信号探测,光谱响应线宽低于0.8 nm,峰值量子效率达到12%以上,响应速率达到8.2 GHz.实验测试结果与理论分析进行了对比,并得到了很好的解释.     

单片集成光电探测器与接收机的协同设计

建立了光电探测器的行为模型.此模型描述了注入光功率与光生电流的关系,以及反偏电压对光生电流与结电容的影响.给出了在统一的SPICE设计环境中对光电子器件与电路协同设计的方法,并对光电探测器与CMOS接收机电路进行了设计.     

单片集成MSM／HEMT长波长光接收机

本文介绍了利用ＩｎＧａＡｓ金属－半导体－金属（ＭＳＭ）长波长光探测器与ＩｎＡ１Ａｓ高电子迁移率晶体管（ＨＥＭＴ）单片集成来实现长波长光接收机的材料和电路设计、工艺途径等研究工作,基本解决了两种器件集成的工艺兼容性的问题,实现了１．３Ｇｂ／ｓ传输速率的单片集成长波长光接收机样品。     

Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers

The monolithic integration of pump lasers and optically pumped vertical-external-cavity surface-emitting lasers is demonstrated. An innovative contacting scheme for the pump lasers offers high design flexibility and scalability. First devices at 1000 nm generate output powers of 2.5 W in pulsed and 0.65 W in continuous-wave operation.     

单片集成InGaAs PIN-JFET光接收器的设计与研制

本文报告了一种OEIC器件:单片集成InGaAs PIN-JFET光接收器的设计与研制结果.为解决光电器件与电子器件在集成上的兼容性,采用了在结构衬底上进行平面化外延的新工艺,达到了器件的准平面结构,并对器件的主要参数进行了计算,选取了较佳的载流子浓度.制成的单片集成器件中,PIN光探测器的量子效率在1.3μm处为57％,暗电流在-5V下小于100nA,JFET的跨导为34ms/mm,与计算植相符.对器件进行光接收功能测试获得了预期的结果.     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.     

A Programmable Lens-Array Antenna With Monolithically Integrated MEMS Switches

This paper describes a reconfigurable millimeter-wave lens-array antenna based on monolithically integrated microelectromechanical systems (MEMS) switches. This device is constructed as a planar array of 2-bit programmable MEMS antenna–filter–antenna (AFA) unit cells that are used to provide a 1-D programmable “aperture transfer function” between the input and output wavefronts. The fully integrated device consists of 484 (22 $times$ 22) AFA elements and 2420 switches. Switches, bias lines, antennas, and the rest of the RF structure are fabricated on two quartz wafers ($varepsilon_{ r}=3.8$, $tandelta=0.002$) that are subsequently stacked using adhesive bonding to form the tri-layer metal structure of the AFA array. The bonded structure also forms a package for the MEMS switches. This paper investigates the design and fabrication issues and presents the measured data related to yield and frequency response of this lens-array. It also characterizes the performance of this device as a steerable antenna. Measured results show that this lens-array can be used to steer the beam of a low gain horn antenna to $pm {hbox{40}}^{circ}$ in either the $E$- or the $H$-plane. For the fabricated prototype, the yield is estimated to be 50% for the best region of the array, resulting in a relatively high insertion loss and sidelobe level.      

一种850 nm单片集成光接收机前端

采用0.5μm GaAs PHEMT工艺和台面光刻互连工艺研制了一种850nm光接收机前端单片电路,包括金属-半导体-金属光探测器和跨阻前置放大器。探测器光敏面积约2000μm2,电容小于0.15pF,4V偏压下的暗电流小于14nA。跨阻前置放大器-3dB带宽接近10GHz,跨阻增益约43dBΩ。光接收机前端在输入2.5Gb/s非归零伪随机二进制序列调制的850nm光信号下得到较为清晰的输出眼图。     

The 100 GHz light switch

Escalating transmission rates in telecoms networks are the spur behind an international research effort in optical processing. The author reports on the work of the BT researchers who are laying the foundations for a new era of photon-based switching systems. The work is based on an interferometric switch known as the TOAD. The TOAD is a variant of a Mach-Zehnder interferometer. Light enters the interferometer, then passes through a 50:50 coupler which divides the input equally between the upper and lower arms. In general, the upper and lower light streams will experience different phase shifts, and these shifts will determine the way the original input is allocated between the two output ports. In particular, if the interferometer is suitably biased then all the light will appear at one or other of the outputs. Now, if a phase shift is introduced into one of the arms the output will switch between ports. This is the principle; its practical exploitation depends on the availability of a device that can effect a π phase shift at a rate of at least tens of GHz. In the TOAD this function is assigned to a semiconductor optical amplifier     

Compact Polarization Mode Converter Monolithically Integrated Within a Semiconductor Laser

The design and realization of a short, passive, single-section waveguide polarization converter monolithically integrated within a Fabry–Perot ridge waveguide laser is reported. The device is fabricated on an unstrained GaAs-AlGaAs double quantum well heterostructure. A predominantly transverse magnetic polarized optical output from the converter facet of greater than 80% is demonstrated for a converter length of 20 $mu$m at an operating wavelength of 867 nm.