SDH中E3复用/解复用系统的FPGA实现

基于FPGA设计了SDH中E3信号复用/解复用系统,包括HDB3编/译码模块、码速调整模块、映射/解映射模块、定位/解定位模块和复用/解复用模块等。在QuartusⅡ9.0中进行了仿真、综合、布局布线和时序仿真,直至各部分功能分别实现,并在Altera公司的Cyclone第四代产品EP4CE115F29C7N上验证了其正确性。用SDH分析仪ANT-5对设计结果进行了一周的测试,误码为0,说明设计基本正确。     

4×10Gb/s OTDM复用与解复用结构优化技术研究

基于40Gb/s OTDM复用结构,利用电吸收调制器(EAM)及时钟提取模块组成的解复用模型,实现了10GHz时钟分量的提取和信号的解复用.针对OTDM复用后信号的非等幅现象以及对应频谱中含有10GHz、20GHz等其他频谱分量的情况,进行了仿真分析及讨论.同时通过实验对不同的时钟提取与解复用结构提取出的时钟信号的质量进行了对比,优化了解复用结构,得到了抖动更小的帧时钟信号.     

布拉格光栅结构RGB波导复用/解复用器的光学特性

针对系统小型化和集成化的发展需求,文章提出了一种基于布拉格光栅结构的红绿蓝(RGB)波导复用/解复用器,系统研究了刻槽深度、周期数量等光栅特征参数对该复用/解复用器性能的影响.研究表明,相对于传统的硅基材料,基于SU8材料的复用/解复用器具有良好的透过率和柔韧性,并且其结构紧凑,波导横截面只有几百纳米,长度仅为几十微米.该复用/解复用器的光学特性主要受到刻槽深度与周期数量的影响,表现为随刻槽深度的增大,反射谱的中心波长先红移后蓝移,反射谱的宽度几乎正比例增大,反射谱的峰值逐渐趋于饱和;而随着周期数量的增多,反射谱的宽度变化不明显,反射谱的峰值逐渐趋于饱和.基于这些特性设计的SU8材料布拉格光栅结构RGB复用/解复用器实现了复用和解复用的功能,为RGB复用/解复用器的小型化、集成化和柔性化奠定了基础.     

非对称平面光波导型模式复用/解复用器研究

针对现有模式复用器的不足,根据有效折射率匹配效应,设计一种非对称平面光波导型模式复用/解复用器。波导结构由1个波导主臂和2个波导分支臂组成。研究了波导各项参数的确定准则,仿真分析了不同的波导底面宽度比对模式复用/解复用性能的影响,确定了最佳的波导底面宽度比,分析了基模和一阶模在波导中的传输过程和光场能量流动情况。结果表明:非对称平面光波导型模式复用/解复用器具有良好的模式复用和解复用性能,并且可以高效率地实现模式之间的转换,具有结构简单、模式转换效率较高、易于集成等优点。     

多业务全数字通信复用/解复用器设计

为了实现多业务全数字通信系统数据的复用/解复用,本文采用DSP查询中断的方法,将各信源输入视频、音频和辅助数据复用成指定帧结构的一路系统传输数据输出,并且将同样结构的一路系统传输数据解复用成视频、音频和辅助数据输出到各信宿。     

基于有限自动机的CMMB解复用差错处理方法

通过对中国移动多媒体广播(CMMB)系统终端解复用的分析,提出终端解复用过程中遇到差错码流的一种处理方法.该方法中,运用有限自动机原理,对终端可能接收到的错误码流进行分类,归纳出各种错误码流的状态.提出各种状态之间的转换条件,设计了有限自动机.用C代码实现后,该有限自动机能很好地处理终端可能接收的错误码流,而且能降低系统对差错处理实现的复杂度,系统升级非常方便.     

基于VORTEX套片的高速复用/解复用解决方案

本文介绍了一种基于PMC公司VORTEX套片的复用/解复用模块解决方案,给出了该方案的原理框图和性能指标,对模块内各组成子模块的功能、实现方式及信号关系等进行了描述.     

基于SPI高速分时复用/解复用的方法实现数据传输及其FPGA实现

本文讨论数字信号传输技术,其是一种基于FPGA的通过SPI总线高速复用、解复用的方法实现数据传输的技术.主要以两块Kintex-7系列芯片之间的数据传输为例,其在节省硬件资源上具有传输可靠、延时小的优势.实验数据表明,该方法不仅结构简单、实用性高,并且能有效地减少硬件资源的开销,更容易满足实际设计的需求.     

TDM系统高速CMOS单片集成复用/解复用器的研究

本文分析了TDM系统中复用器和解复用器的电路结构,通过比较各种结构之间的优缺点和应用特点,提出了10Gb/s速率工作的复用和解复用器结构及其内部所应采用的电路.进而,本文着重研究了系统中关键的同步电路,给出了具体的设计和优化方法.采用TSMC 0.25 μm CMOS 工艺,本文制作了四种不同的同步触发器并对其性能进行了比较,其中双预充电TSPC触发器可工作在4GHz.以此为基础,本文还设计了半静态结构工作在1.25Gb/s速率的10:1复用器、1∶10解复用器以及TSPC结构工作在1.5625Gb/s速率的5∶1复用器和CML结构工作在10Gb/s速率的1∶4解复用器,通过在晶片测试,其结果表明电路功能正确、工作稳定,达到了设计要求,证明了本文提出的设计方法的可行性和正确性.     

基于解复用/复用方法实现数据同步及其FPGA实现

本文涉及数字信号传输技术,是一种基于FPGA的通过解复用、复用的方法实现数据同步的方法,并以一个同源的但有传输延时变化的时钟之间的数据同步为例,分析了该方法在节省FPGA RAM资源上的优势,通过数据证明该方法结构简单、占用逻辑资源少,能有效地降低数据同步的延时,容易满足实际设计的需要。     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For 1-/spl mu/m gate-length devices, a minimum noise figure (NF/sub min/) of 0.7 dB and an associated gain (G/sub a/) of 19 dB were observed at 1 GHz, and an (NF/sub mi/) of 3.3 dB and a G/sub a/ of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented.