利用崩越收集极改进晶体管

研究了具有碰撞雪崩渡越时间收集极(以下简称IMPATT收集极)的晶体管式结构在工作特性上的改进。提议给这种器件命名为碰撞雪崩渡越时间晶体管(Impistor),简称崩越晶体管。在这种晶体管式结构中,对于结定的发射极条宽,崩越晶体管的工作频率可能比通常的晶体管要高5～10倍。     

毫米波硅崩越二极管

研究了用于 W-40G 转发器的本振和射频功率放大器的80千兆赫硅崩越二极管。介绍了一种用硅的物理常数,二极管结构和工作条件表示的崩越二极管输出功率的分析公式。根椐这一表示式,可以设计大功率或者高效率运用的崩越二极管。搞清楚了硅的不完善性和二极管性能之间的对应关系。通过改进二极管周围的结构(包括振荡腔体),在80千兆赫频段获得了具有200毫瓦左右输出功率的二极管,成品率约15%。目前可靠性的研究正在进行中,预期失效率可保证为1000非特(FIT)。     

WX系列崩越二极管

ＷＸ系列崩越二极管ＷＸＳｅｒｉａｌＩＭＰＡＴＴＤｉｏｄｅｓ￥ＣｈｅｎＳｈｕｉｓｈｅｎｇ（ＮａｎｊｉｎｇＥｌｅｃｔｒｏｎｉｃＤｅｖｉｃｅｓＩｎｓｔｉｔｕｔｅ２１００１６）崩越二极管具有优良的性能，在微波及毫米波频段能产生大的连续波或脉冲射频功率，是常用...     

崩越二极管的热散逸

系统地描述了肖特基势垒砷化镓崩越(IMPATT)二极管直流热性能的简单一维计算机模型,用以计算不同结构的崩越二极管中热散逸的条件。已用这个模型确定了三种结构的砷化镓崩越二极管热稳定的条件。计算导出了几点结论,其中最重要的如下所述。 a) 结的热离子发射(漏泄)电流在热学上是不稳定的,而雪崩倍增则是热稳定的。在高结温时二极管热稳定性要求热离子发射电流低而雪崩倍增电流大。 b) 在结处由于沾污或缺陷引起的势垒高度的降低,增加了热散逸的可能性。 c) 对于给定的势垒高度,崩越二极管的掺杂越高,热散逸的阻力就越大。     

双漂移崩越二极管的渡越角分析

在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下,推导了双漂移崩越二极管的渡越角表达式.用于计算35GHz崩越管渡越角,与计算机模拟结果符合良好.     

里德型大功率砷化镓崩越二极管

据日本电气公司(NEC)报导,用砷化镓肖特基势垒崩越二极管在9～10千兆赫频段内,获得了10瓦的微波振荡功率,其效率大于20％。这是现今已报导过的单个封装的半导体二极管中最高的连续功率。此二极管是M—n~ —n—n~ 里德型结构,用铂在具有高掺杂和低掺杂两层结构的砷化镓外延片上形成肖特基势垒。采用精确控制的Ga/AsCl_3/H_2气体的输运过程来制备     

崩越二极管模拟分析及实验

应用自编的崩越二极管模拟程序,进行了器件的计算机模拟.给出硅8毫米双漂移崩越管的模拟结果及其分析.并给出经计算机优化器件设计的实验结果.     

8毫米硅连续波崩越二极管

叙述8毫米硅连续波崩越二极管的设计和制造,在频率35 GHz附近,金集成热沉的双漂移崩越管获得400～800mW连续输出功率,效率5％～10％,结温200～250℃。     

高效率砷化镓崩越二极管的并联组合

本文叙述了高效率砷化镓崩越二极管的并联组合技术及多管芯并联器件的热设计;简单介绍了并联器件制造工艺;并给出了两管芯并联的实验结果:在X波段最大输出功率为5.4W,最佳效率达26.6%.     

晶体管渡越时间振荡器的效率

本文叙述了晶体管渡越时间负阻振荡器的简单原理。预计在微波频率工作可以得到低噪声。叙述了一个工作在10千兆赫的典型设计。并指出最大的理论效率大约是40％。     

Frequency Modulation of Avalanche Transit Time Oscillators

This paper presents experimental data taken to determine the frequency modulation characteristics of avalanche transit time oscillators. The active element is a diffused mesa diode with a shallow junction in epitaxiad n-n+ silicon; the details of the construction of the diode are presented and its typical characteristics are discussed. The basic oscillator consists of the diode mounted in the capacitive portion of a radial mode cavity machined of copper with the outlines of a DO-5 diode header. The frequency of oscillation is dependent upon the diode junction capacitance and is varied between 5 and 8 GHz for the diodes tested. Microwave power levels up to 100 mW have been observed with an efficiency exceeding 3 percent. The frequency drift over the temperature range from -70 to +100/spl deg/C is 2.5x10/sup -5/ parts/ /spl deg/C. The frequency modulation characteristics of these oscillators indicate their potential applications in miniature solid-state low-power communications systems.     

Fundamental limitations of the Controlled Avalanche Transit Time transistor (CATT)

This paper reviews the fundamental limitations of the CATT as a high power and high frequency device.The 1st section recalls CATT's principles. The 2nd section gives preliminary studies showing the device limitations under d.c. operating conditions. Then, the 3rd and 4th sections present a thorough analysis and a numerical simulation allowing us to show the more important of CATT's limitations under microwave class B or C operating conditions. Finally, the 5th section concludes this study with experimental verifications of the theoritical predictions.     

Double Avalanche Injection in Diode Avalanche Sharpeners

Semiconductors - Picosecond-range avalanche sharpening diodes commutating fast-rising high-voltage pulses of submicrosecond duration are simulated numerically. It is demonstrated that the maximum...     

基于雪崩三极管的高重频高稳定度脉冲源研究

基于雪崩三极管的脉冲源具有稳定度高、脉冲窄、上升时间短等优点,分析了雪崩三极管脉冲源稳定度的影响因素。采用适当的优化措施提高了稳定度指标,设计了高稳定度的雪崩三极管脉冲源,脉冲峰值电压1500V(50Ω负载),脉冲宽度1ns,上升时间200ps,具有很高的稳定度指标:短时抖动小于30ps,长时漂移小于100ps/min,峰值电压和脉冲宽度抖动小于1%。通过对改进脉冲电路的充电形式,实现了重复频率为60kHz的脉冲输出。     

盖革模式雪崩光电二极管的场效应管淬灭电路设计

雪崩光电二极管(Avalanche Photondiode,APD)是一种常用于激光探测领域的光敏元件.本文针对盖革模式雪崩光电二极管(Geiger Mode-Avalanche Photondiode,Gm-APD)工作时发生的雪崩效应,设计了一种场效应管淬灭电路(Field Effect Transistor Qu...     

Study of Transistor Switching Circuit Stability in the Avalanche Region

In the common-emitter transistor switching application, there are occasions in which the collector supply voltage exceeds the transistor sustain voltage. Consequently, the load line could intersect the negative resistance characteristic of the device in the I /sub C/ -V /sub CE/ plane, resulting in a possible unstable or latch-up condition. The purpose of this paper is to study analytically the avalanche region characteristics and their implications for transistor switching applications. The first part is concerned with the derivation of the direct current-voltage relation that, when viewed from the output terminal, represents a negative resistance. The characteristic of this negative resistance depends on the base-emitter circuit condition. The ac terminal behavior is treated in the second part where consideration of the frequency dependence of alpha leads to an equivalent circuit consisting of an inductance in series with a negative resistance. Both elements are nonlinear as well as frequency-dependent. With an external load connected to this nonlinear circuit, a technique of nonlinear analysis is employed to investigate the circuit stability. From this analysis, latch-up and oscillation phenomena in the transistor switching circuit can be predicted. Since the second breakdown involves additional mechanisms besides avalanche multiplication, it is not discussed in this paper.     

Lateral Current Confinement Determines Silicon Avalanche Transistor Operation in Short-Pulsing Mode

The transient in a Si bipolar junction transistor was investigated in high-current short-pulsing ( 2 ns) mode both experimentally and numerically. A comparison of measured and simulated waveforms clearly showed that only a small fraction of the perimeter of the emitter-base interface (in the lateral direction) takes part in the switching transient when a capacitor of relatively small value (80 pF) is discharged across the transistor to obtain a current pulse of a few nanoseconds in duration. A good agreement was found between measurements and simulations in the 2-D numerical model when the effective operating perimeter was used as a parameter in the model. The results allowed reliable analyses of the thermal regime to be performed. Possible reasons for the significant current confinement in short-pulsing mode and relatively homogeneous transistor switching with longer current pulses are discussed, and a mechanism of fast lateral turn-on spread is assumed. One conclusion of practical importance is that a short-pulsing relatively high-current mode could not be realized without current confinement in the lateral direction.     

固体雪崩管快脉冲源的研制

固体雪崩管被触发工作在雪崩或二次击穿瞬间时能输出很大的脉冲峰值电流,且触发晃动和上升时间都很小,因此广泛用于制作重复频率低而脉冲功率高的快脉冲源。近几年研制了几种用于纳秒同步机的单管源,应用于产生较宽快沿方波,并且研制出微分波的多管串并联源,应用于纳秒高压产生器中触发氢闸管的多管串联源。     

用雪崩三极管电路生成高压负脉冲技术研究

雪崩效应因为能在极短时间内输出极大电流,常被用来设计高压脉冲电路。分析了利用雪崩三极管电路生成高压正脉冲的实现方案,并提出了改进的设计,接着分析了脉冲输出过程中负载回路的电流流向,通过改变信号输出点,设计了输出高压负脉冲的电路。电路输出的脉冲幅度达到了-200V,前沿约3.2ns。与相似结构的正脉冲电路相比,性能略有降低。同时对性能下降的原因进行了分析。