共查询到20条相似文献,搜索用时 62 毫秒
1.
3.
本文针对大规模集成电路应用需要,采用显微付里叶变换红外光谱仪研究了硅中的氧、碳含量,硼、磷硅玻璃中的硼、磷含量及外延层厚度的微区测量技术,在光孔尺寸为100×100μm级时,测量精度达到国标的要求,空间分辨率提高了近两个数量级。 相似文献
6.
7.
随着超大规模集成电路设计线宽向纳米尺寸过渡,对半导体硅材料的性能和参数提出了更加严格的要求。本文阐述了绝缘体上硅(SOI)和锗硅(SiGe)等主要硅基半导体材料的研究进展,讨论了这些材料应用于纳米集成电路和微电子、光电子器件的经济技术前景。 相似文献
8.
9.
《电子工业专用设备》2004,33(7):45-46
日本原子能研究所与独立行政法人产业技术综合研究所(以下简称产综研),日前成功地联合开发出了采用碳化硅半导体底板的晶体管。作为晶体管性能指标的沟道迁移率(电子活动的难易度),突破了实用化所要求的标准 相似文献
10.
11.
Carbon nanotube electronics 总被引:3,自引:0,他引:3
Avouris P. Appenzeller J. Martel R. Wind S.J. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2003,91(11):1772-1784
We evaluate the potential of carbon nanotubes (CNTs) as the basis for a new nanoelectronic technology. After briefly reviewing the electronic structure and transport properties of CNTs, we discuss the fabrication of CNT field-effect transistors (CNTFETs) formed from individual single-walled nanotubes (SWCNTs), SWCNT bundles, or multiwalled (MW) CNTs. The performance characteristics of the CNTFETs are discussed and compared to those of corresponding silicon devices. We show that CNTFETs are very competitive with state-of-the-art conventional devices. We also discuss the switching mechanism of CNTFETs and show that it involves the modulation by the gate field of Schottky barriers at the metal-CNT junctions. This switching mechanism can account for the observed subthreshold and vertical scaling behavior of CNTFETs, as well as their sensitivity to atmospheric oxygen. The potential for integration of CNT devices is demonstrated by fabricating a logic gate along a single nanotube molecule. Finally, we discuss our efforts to grow CNTs locally and selectively, and a method is presented for growing oriented SWCNTs without the involvement of a metal catalyst. 相似文献
12.
13.
ChristinaNickotas 《今日电子》2004,(6):34-34
Infineon Technologies AG公司(位于德国慕尼黑)的研究人员已制作成功首款采用碳纳米管的功率半导体器件,在此之前人们一直认为这种器件不适合于功率应用中所使用的高电压和高电流。采用常规化学汽相淀积工艺生产的这种纳米管过去曾被用来试制功率晶体管。被用作LED或电机控制开关的这种试制器件由大约300个并行排列的纳米管组成,它能够在2.5V电压条件下提供2mA的电流。虽然人们已经在研究实验室里采用纳米管来制作电脑芯片用的晶体管,但这种场合中的电压则低了大约1000倍。研究小组的实验结果表明:采用碳纳米管制作的功率晶体管的开关… 相似文献
14.
15.
Hoenlein W. Kreupl F. Duesberg G.S. Graham A.P. Liebau M. Seidel R.V. Unger E. 《Components and Packaging Technologies, IEEE Transactions on》2004,27(4):629-634
The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor deposition growth is very well suited for selective in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFET). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon metal oxide semiconductor field effect transistors and discuss integration issues. 相似文献
16.
《Photovoltaics Bulletin》2002,2002(2):6
Experiments with carbon nanotubes, conducted at the University of North Carolina at Chapel Hill, show carbon nanotubes can contain roughly twice the energy density of graphite, making possible longer-lasting batteries. It also suggests that it should be possible to store more energy in batteries using the nanotubes rather than conventional graphite electrodes. 相似文献
17.
18.
随着摩尔定律即将走向尽头,以及军民电子信息系统对多功能集成、高密度集成、小体积重量、低功耗、大带宽、低延迟等性能的持续追求,将多种化合物半导体材料体系(如GaN、InP、SiC等)的功能器件、芯片,与CMOS集成电路的芯片进行异质集成的技术正在拉开序幕,将在微电子、光电子等领域带来一场新的革命,硅基异质集成也被认为是发展下一代集成微系统的技术平台。本文梳理了射频微电子学与硅光子学领域中以化合物半导体为主的材料(或芯片)与硅半导体材料(或芯片)异质集成的最新进展,以期国内相关领域研究人员对国外的进展有一个比较全面的了解。 相似文献
19.
The electronic transport properties of the armchair silicon carbide nanotube (SiCNT) are investigated by using the combined nonequilibrium Green's function method with density functional theory. In the equilibrium trans-mission spectrum of the nanotube, a transmission valley of about 2.12 eV is discovered around Fermi energy, which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations.More important, negative differential resistance is found in its current voltage characteristic. This phenomenon orig-inates from the variation of density of states caused by applied bias voltage. These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices. 相似文献