Evaluation of absorption and emission cross sections of Er-dopedLiNbO3 for application to integrated optic amplifiers

The polarization-dependent absorption and emission spectra of the ⁴I_13/2-⁴I_15/2 transition (λ~1.5 μm) in single crystal bulk Er:LiNbO₃ have been measured. Low-temperature (10 K) measurements of the Stark split energy levels of these two manifolds indicate at least two Er³⁺ sites. McCumber theory is applied to determine the Er:LiNbO₃ absorption and emission cross sections. These values are used to calculate the gain characteristics of Er:LiNbO₃ channel waveguides. Calculations indicate that a gain of 10 dB is achievable in a waveguide of several centimeters using ~20-mW pump power     

Gain and saturation intensity of the green Ho:ZBLAN upconversionfiber amplifier and laser

The gain and saturation intensity of the green Ho-doped fluorozirconate (ZBLAN) glass fiber amplifier and laser, pumped in the red (643 ⩽ λ_p ⩽ 649 nm; ⁵F₅ ← ⁵I₈), have been measured. For a 2.4-μm core diameter fiber 45 cm in length, the single-pass gain at 543.4 nm exceeds 12 dB for 90 mW of pump power at 643.5 nm. The saturation power for the ⁵F₄, ⁵S₂ → ⁵I₈ lasing transition was determined from gain measurements to be 970 ± 175 μW, which corresponds to a saturation intensity of 19.8 ± 3.5 kW · cm^-2 , and a stimulated emission cross section approximately one order of magnitude larger than theoretical estimates     

Intracavity 1.549-μm pumped 1.634-μm Er:YAG lasers at 300 K

A novel method of generating 1.634-μm laser action from Er:YAG crystals pumped intracavity by an Er:glass laser emitting at 1.549 μm is described. Operation of the Er:glass laser at 1.549 μm (red shifted from the standard 1.532 μm, but with comparable output) at 500 K was obtained using mirrors with tailored spectral reflectivities. Several Er:YAG crystals ranging in concentration from 0.3% to 2% and in length from 1 cm to 8 cm were lased in the intracavity pumping arrangement. All the Er:YAG crystals lased in the ⁴I_13/2 :Y1(6544 cm^-1)-⁴I_15/2:Z6(424 cm ^-1) 1.634-μm transition at 300 K     

Gain measurement and upconversion analysis in Tm3+, Ho3+ co-doped alumino-zirco-fluoride glass

The small signal gain coefficients were measured in Tm³⁺,Ho³⁺ co-doped alumino-zirco-fluoride glass. A gain of 15%/cm at 2.05 μm was obtained for pump power density of 42 kW/cm². The temperature increase of the glass was found to be more than 150 K with this pump power, which was estimated from a comparison between fluorescence intensities of Tm^{3+ 3} F₄-³H₆ and Ho^{3+ 5} I₇-⁵I₈. An upconversion rate constant of 12.5×10^-17 cm³ sec^-1 from a coupled (Tm^{3+ 3}F₄, Ho^{3+ 5}I₇) level to a coupled (Tm^{3+ 3}H₅, Ho^{3+ 5}I₆) level was determined by fitting the experimentally obtained gain coefficients to the calculated one which takes into consideration any temperature increase     

Continuous-wave laser action in Er3+:YLF at 3.41 μm

Continuous-wave laser emission at 3.41 μm from an erbium-doped LiYF₄ crystal (Er³⁺:YLF) at 77 K is demonstrated. Operation of this four-level laser is based on the Er^{3+ 4}F_9/2-⁴I_9/2 transition. An output power of 12 mW and a slope efficiency of 2% have been achieved     

10-μm GaAs/AlGaAs multiquantum well scanned array infraredimaging camera

A long-wavelength infrared imaging camera that uses a GaAs/Al_xGa_1-xAs quantum-well infrared photodetector (QWIP) array is demonstrated. Excellent noise equivalent temperature difference sensitivity (NEΔT<0.1°C) has been achieved. The long-wavelength cutoff for the QWIP used in this camera is at λ _c=10.7 μm with the peak response being at λ_p =9.8 μm. A peak detectivity of 2×10¹⁰ cm√Hz/W has been achieved at 77 K as well as an excellent pixel-to-pixel uniformity of 2%. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays     

Investigation of broad-band quantum-well infrared photodetectorsfor 8-14-μm detection

Typical quantum-well infrared photodetectors (QWIPs) exhibit a rather narrow spectral bandwidth of 1-2 μm. For certain applications, such as spectroscopy, sensing a broader range of infrared radiation is highly desirable. In this paper, we report the design of four broad-band QWIPs (BB-QWIPs) sensitive over the 8-14-μm spectral range. Two n-type BB-QWIPs, consisting of three and four quantum wells of different thickness and/or composition in a unit cell which is then repeated 20 times to create the BB-QWIP structure, are demonstrated. The three-well n-type In_xGa_1-xAs-Al_yGa_1-yAs BB-QWIP was designed to have a response peak at 10 μm, with a full-width at half-maximum (FWHM) bandwidth that varies with the applied bias. A maximum bandwidth of Δλ/λ_p=21% was obtained for this device at V_b=-2 V. The four-well n-type In_xGa_1-xAs-GaAs BB-QWIP not only exhibits a large responsivity of 2.31 A/W at 10.3 μm and V_b=+4.5 V, but also achieves a bandwidth of Δλ/λ_p=29% that is broader than the three-well device. In addition, two p-type In _xGa_1-xAs-GaAs BB-QWIPs with variable well thickness and composition, sensitive in the 7-14-μm spectral range, are also demonstrated. The variable composition p-type BB-QWIP has a large FWHM bandwidth of Δλ/λ_p=48% at T=40 K and V_b=-1.5 V. The variable thickness p-type BB-QWIP was found to have an even broader FWHM bandwidth of Δλ/λ _p=63% at T=40 K and V_b=1.1 V, with a corresponding peak responsivity of 25 mA/W at 10.2 μm. The results show that a broader and flatter spectral bandwidth was obtained in both p-type BB-QWIP's than in the n-type BS-QWIP's under similar operating conditions     

High-performance long-wavelength (λ~1.3 μm) InGaAsPNquantum-well lasers

We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, nitrogen containing lasers emitting in the λ=1.2- to 1.3-μm wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at λ=1.295 μm exhibited a record low threshold current density (J_TH) of 2. 5 kA/cm². Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of J_TH =1.9 kA/cm² at λ=1.27 μm and J_TH=1.27 kA/cm² at λ=1.2 μm. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 μm     

Improved gain performance in Yb3+-sensitized Er3+-doped alumina (Al2O3) channel opticalwaveguide amplifiers

Small-signal amplification in short, Yb³⁺-sensitized, Er³⁺-doped alumina (Al₂O₃) channel optical waveguides with high Er³⁺ concentrations is analyzed. Taking into account uniform up conversion, excited state absorption (ESA) from the Er³⁺ metastable level (⁴I_13/2 ), and Yb³⁺→Er³⁺ energy transfer by cross relaxation, the obtainable gain improvements compared to Yb³⁺ -free Er³⁺-doped Al₂O₃ optical waveguides are investigated. The amplifier model is based on propagation and population rate equations and is solved numerically by combining finite elements and the Runge-Kutta algorithm. The analysis predicts that 5-cm long Yb³⁺/Er³⁺ co-doped Al₂O ₃ waveguides show 13-dB net signal gain for 100 mW pump power at λ_p=980 nm     

Low-threshold current, high-efficiency 1.3-μm wavelengthaluminum-free InGaAsN-based quantum-well lasers

We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) operation of InGaAsN-GaAs QW lasers is demonstrated at λ=1.3 μm at a threshold current density of only J_TH =1.32 kA/cm². These narrow ridge (W=8.5 μm) lasers also exhibit an internal loss of only 3.1 cm^-1 and an internal efficiency of 60%. Also, a characteristic temperature of T₀=150 K from 10°C to 60°C was measured, representing a significant improvement over conventional λ=1.3 μm InGaAsP-InP lasers. Under pulsed operation, a record high maximum operating temperature of 125°C and output powers greater than 300 mW (pulsed) and 120 mW (CW) were also achieved     

Q-switch regime of 3-μm Er:YAG lasers

A mathematical model, based exclusively on spectroscopic data concerning radiative, nonradiative, and energy transfer processes, is proposed and used to simulate the Q-switch regime of a 3-μm Er:YAG laser. The connection between the main energy transfer mechanisms that make possible generation on the self-saturated transition ⁴I _11/2→⁴I_13/2 (upconversion from ⁴I_13/2 and ⁴I_11/2 and cross relaxation from ⁴S_3/2) and the giant pulse characteristics are discussed. The radiative as well as nonradiative losses during optical pumping and giant pulse generation are defined and evaluated. A particular attention is given to the frustrated total internal reflection (FTIR) Q-switch which demonstrated real qualities for 3-μm erbium lasers. The reasons responsible for experimental performances of Q-switched Er:YAG lasers inferior to those predicted by the mathematical modeling are analyzed     

Full-wave analysis of choking characteristics of sleeve balun oncoaxial cables

An optimal design for a sleeve balun with maximum choking on a coaxial cable is determined using a full-wave body of revolution finite difference time domain method with perfectly matched layer boundary conditions. An analysis of the sensitivity of choke length L and outer diameter R₂ on choking effectiveness was carried out. A balun with L=77.5 mm (0.232λ₀) and R₂=8 mm on a cable with R₁=2 mm (R₂/R₁=4) results in an S₂₁ of -20 dB at 900 MHz and -15.5 dB at 2730 MHz. The isolation of the balun at 900 MHz is quickly degraded as the R₂ /R₁ ratio is reduced below 2. Increasing R₂/R₁ to 8, results in a reduction of optimum balun length L to approximately 0.215λ₀, approximately 14% shorter than the typical recommended length for an 'ideal' quarter-wave balun     

Optimal pump wavelength in the4I15/2-4I13/2 absorption band for efficient Er3+-doped fiberamplifiers

The authors report the measured gain of a highly efficient erbium-doped fiber amplifier pumped at wavelengths between 1.46 and 1.51 μm. The optimal pump wavelength, λ_opt, was determined to be 1.475 μm. At this wavelength, the maximum gain coefficients for signals at 1.531 and 1.544 μm were 2.3 and 2.6 dB/mW, respectively. At λ_opt, high gains ranging from 32 dB at pump power P_p=20 mW up to 40 dB at P _p=80 mW were obtained. These modest pump powers are within the capabilities of currently available 1.48-μm diode lasers. The width about λ_opt for 3-dB gain variation exceeded 27 nm for P_p=10 mW and 40 nm for P_p >20 mW. With this weak dependence on pump wavelength, single-longitudinal-mode lasers do not have a significant advantage over practical Fabry-Perot multimode pump lasers     

High T0 long-wavelength InGaAsN quantum-well lasersgrown by GSMBE using a solid arsenic source

We demonstrate high performance, λ=1.3- and 1.4-μm wavelength InGaAsN-GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas source molecular beam epitaxy (GSMBE) using a solid As source. Threshold current densities of 1.15 and 1.85 kA/cm² at λ=1.3 and 1.4 μm, respectively, were obtained for the lasers with a 7-μm ridge width and a 3-mm-long cavity. Internal quantum efficiencies of 82% and 52% were obtained for λ=1.3 and 1.4 μm emission, respectively, indicating that nonradiative processes are significantly reduced in the quantum well at λ=1.3 μm due to reduced N-H complex formation. These Fabry-Perot lasers also show high characteristic temperatures of T₀ =122 K and 100 K at λ=1.3 and 1.4 μm, respectively, as well as a low emission wavelength temperature dependence of (0.39±0.01) nm/°C over a temperature range of from 10°C to 60°C     

Design optimization for efficient erbium-doped fiber amplifiers

The gain and pumping efficiency of aluminosilicate erbium-doped fiber amplifiers (EDFAs) are analyzed as a function of guiding parameters and Er-doping profile for two pump wavelengths of λ _p=980 nm and λ_p=1.47 μm. Three designs of fiber-amplifier waveguides are considered: one with the same mode size as standard 1.5-μm communication fibers (type 1); one with the same mode size as standard 1.5-μm dispersion-shifted fibers (type 2); and one with mode size smaller than those of communication fibers (type 3). For the 1.47-μm pump, fundamental LP₀₁ mode excitation is assumed, while for the λ_p=980-nm pump, concurrent excitation of LP₁₁ modes is considered. It is shown that excitation of higher-order pump modes at 980 nm does not significantly affect the amplifier gain performance. The effect of concentrating the Er³⁺ doping near the center of the fiber core is shown to increase the amplifier gain coefficients by a factor of 1.5 to 2     

Analysis of competing mechanisms in transitions between excitedstates in Er-doped integrated waveguides

A new procedure for determining the prevalence of either excited-state absorption (ESA) or nonradiative cooperative energy transfer between erbium ions in transitions between excited states in Er-doped integrated waveguides is presented. These transitions are currently very attractive for the development of upconversion lasers. The procedure is based on the analysis of the dependence on the transition-originating mechanisms of the modulation transfer from the pump to the excited levels' population. The accuracy and validity range of the method are studied numerically using ordinary integrated structures. By using this procedure, the ratio of the contributions of the two competing mechanisms to the ⁴I_13/2 ⇒ ⁴I_9/2 transition is determined from fluorescence measurements on a Er,Ti:LiNbO₃ sample excited by a 1480-nm pump. Moreover, new values of the excited-state pump-absorption cross section from level ⁴I_13/2, σ₂₄ (≈1480 nm) = 0.8 × 10^-26 m², and of the parameter associated with nonradiative cooperative energy transfer between Er³⁺ ions, C₂₂ = 3 × 10^-24 m³ s·^-1, are reported     

Emission cross sections and spectroscopy of Ho3+ laserchannels in KGd(WO4)2 single crystal

The spectroscopic properties of Ho³⁺ laser channels in KGd(WO₄)₂ crystals have been investigated using optical absorption, photoluminescence, and lifetime measurements. The radiative lifetimes of Ho³⁺ have been calculated through a Judd-Ofelt (JO) formalism using 300-K optical absorption results. The JO parameters obtained were Ω₂=15.35×10^-20 cm², Ω ₄=3.79×10^-20 cm², Ω₆ =1.69×10^-20 cm². The 7-300-K lifetimes obtained in diluted (8·10¹⁸ cm^-3) KGW:0.1% Ho samples are: τ(⁵F₃)≈0.9 μs, τ( ⁵S₂)=19-3.6 μs, and τ(⁵F₅ )≈1.1 μs. For Ho concentrations below 1.5×10²⁰ cm^-3, multiphonon emission is the main source of non radiative losses, and the temperature independent multiphonon probability in KGW is found to follow the energy gap law τ_ph ^-1(0)=βexp(-αΔE), where β=1.4×10^-7 s^-1, and α=1.4×10³ cm. Above this holmium concentration, energy transfer between Ho impurities also contributes to the losses. The spectral distributions of the Ho³⁺ emission cross section σ_EM for several laser channels are calculated in σ- and π-polarized configurations. The peak a σ_EM values achieved for transitions to the ⁵I₈ level are ≈2×10^-20 cm² in the σ-polarized configuration, and three main lasing peaks at 2.02, 2.05, and 2.07 μm are envisaged inside the ⁵I₇→⁵I₈ channel     

Low-temperature sensitive, compressively strained InGaAsP active(λ=0.78-0.85 μm) region diode lasers

This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (λ=0.78-0.85 μm). High characteristic temperature T₀(200 K) and T₁ (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (Δa/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T₀ and T ₁ a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed     

Pressure-dependent Sellmeier coefficients and material dispersionsfor silica fiber glass

The pressure-dependent Sellmeier coefficients are essential to characterize the optical design parameters for the optical fiber communication systems under deep sea environmental conditions. These coefficients are calculated for densified silica glass for the first time to compute the pressure dependence of material dispersion at any wavelength from the ultraviolet (UV) to 1.71 μm. The zero dispersion wavelength λ₀ (1.2725 μm at 0.1 10⁶ N m ^-2) varies linearly with pressure, and dλ₀/dP is 0.0027 nm/(10⁶ N m^-2). The calculated value is approximately one-third of the experimental value of 0.0076 nm/(10⁶ N m^-2) for a germanium-doped dispersion shifted fiber having λ₀=1.5484 μm and -0.0070 nm/(10⁶ N m^-2) for a pure silica-core fiber cable having λ₀ =1.2860 μm. Since, the refractive indexes are increased with pressure, the negative value of shift of the zero-dispersion wavelength is erroneous. The explanations are due to Ge-doping in silica glass, a possible temperature fluctuation of 0.16°C in the pressure-dependent measurement system of the zero dispersion wavelength and different experimental conditions of the silica glass and the optical fibers. This anomaly can also be attributed to the internal strain development at the core-cladding and fiber-jacketing boundaries due to pressure, which shows a larger experimental value. It accounts for the experimental values satisfactorily