IGBT的传输特性分析

对绝缘栅双极晶体管中宽基区、低增益ｐｎｐ晶体管与普通高增益晶体管之间的差异进行了综合分析，表明，ＩＧＢＴ的工作特性必须采用双极传输理论来描述。     

IGBT关断瞬态特性分析

本文基于ＮＪＴ的开基区关断过程，提出了ＩＧＢＴ关断瞬态的电荷控制模型，正确描述了阴极处耗尽层扩展区效应及反注入少数载流予效应，推导出关断时电流随时间的解析表达式，并讨论了缩短关断时间，优化器件设计的原则。     

一种新型非穿通型IGBT

本文介绍了一种新型的非穿通型（ＮＰＴ）绝缘栅双极晶体管（ＩＧＢＴ）。该器件直接基于体硅材料上而没有任何降低寿命的步骤。论证了此器件能兼具低通压降、低开关损耗以及高压能力。与常规ＮＰＴ器件相比，其通态压降与关断损耗间的折衷关系更优越。分析了器件的温度特性及擎住特性。结果表明，这种ＮＰＴ结构的温度特性优良，短路电流能力非常高，无擎住发生。     

IGBT的过流保护策略

本文研究了ＩＧＢＴ的过流保护策略,给出了一种新的过流保护设计思路。     

IGBT的发展现状及应用

介绍了绝缘栅双极晶体管（ＩＧＢＴ）的基本结构，工作原理及其在国内外的发展现状，并阐述了ＩＧＢＴ的独特性能及其在电力电子领域的应用。     

高压IGBT制造技术的最新动向

阐述了当前２．５－４．５ＫＶ高压ＩＧＢＴ的最新制造技术和典型器件结构，认为高压大电流ＩＧＢＴ器件的开发成功将为未来电力电子技术的发展提供新的机遇和挑战。     

一种实用的IGBT驱动电路

一种实用的ＩＧＢＴ驱动电路张开如，程斌（山东矿业学院济南分院，济南，２５００３１）功率绝缘栅双极晶体管（简称ＩＧＢＴ）因具有开关频率高、通断电流大等优点而得到越来越广泛地应用。随之而来的各种驱动电路也应运而生，其中有分立元件构成的驱动电路，也有专用的...     

IGBT全自对准栅挖槽工艺研究

设计了一种全自对准槽栅IGBT(绝缘栅双极晶体管)结构，其工艺简单，全套工艺只有两张光刻版，提高了工艺成品率。它独特的IGBT沟道多重短路结构，有效地防止了器件闩锁；采用氧化层硬掩膜和硅化物工艺，实现了全自对准的多晶硅反刻和金属连接，增加了IGBT芯片单位面积的元胞密度和沟道宽度，提高了器件的电流能力；用砷(As)掺杂代替磷(P)掺杂，有效地提高了源区表面浓度，实现了浅结工艺。     

IGBT在照相机闪光灯电路中的应用

介绍IGBT在照相机闪光灯电路中的应用。     

基于有源箝位的IGBT过电压抑制技术

在介绍绝缘门极双极性晶体管(IGBT)在关断过程中产生过电压原理基础上,分析了传统的过电压抑制方法存在的问题,给出了一种基于有源箝位的IGBT过电压抑制策略。所给出的有源箝位电路由瞬态电压抑制器(TVS)构成,位于IGBT的集电极与门极之间。基于Saber的仿真结果证实了该策略可将IGBT关断时的过电压箝位在瞬态电压抑制器的设定值,能有效地减小IGBT关断时产生的过电压。     

Progress in MOS-controlled bipolar devices and edge termination technologies

An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The Insulated Gate Bipolar Transistor (IGBT) technology is explored from its initial stage up to the latest state-of-the-art developments, in terms of cathode engineering, drift design and anode engineering to highlight the different approaches used for optimisation and the achieved trade-offs. Further, several MOS-gated thyristors, which are aimed to replace the IGBT, are analysed. Moreover, the present paper reviews the various approaches in the fabrication of edge termination used in power device MOS-controlled bipolar devices.     

缓变场终止型IGBT特性的仿真

为改善场终止型绝缘栅双极型晶体管(FS-IGBT)电场终止能力的可靠性,对一种缓变场终止型绝缘栅双极型晶体管(GFS-IGBT)的特性进行了仿真研究.与传统FS-IGBT的突变场终止层不同,GFS-IGBT所具有的场终止层是一个厚度为20～30 μm,峰值掺杂浓度为3.5×1015 cm-3的缓变场终止层.采用Sentaurus TCAD仿真软件,对600 V/20 A的FS-IGBT与GFS-IG-BT和非穿通型IGBT (NPT-IGBT)在导通、开关和短路特性等方面进行了对比仿真.结果表明,在给定的参数范围内,GFS-IGBT具有更低的通态压降、良好的关断电压波形以及更小的关断能耗.最后介绍了一种针对600 V IGBT器件的缓变场终止结构的制造技术.     

A 2D physically based compact model for advanced power bipolar devices

A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500 V-1500 A flat pack TOSHIBA IEGT.     

IGBT器件可靠性评估中建模及参数提取的研究

IGBT器件的失效是与其动态特性相关的复杂过程,涉及到电热机械等多方面因素,如何描述这一过程是掌握器件可靠性的基础。本文从IGBT的导电机理出发,提出采用二极管势垒电容表征其内部寄生电容的方法,建立了IGBT的电路模型,描述其动态特性,并以子电路形式集成到PSPICE软件中。最后进行了模型验证和敏感度分析,结果证实该模型在描述IGBT动态特性方面的效果是可以接受的。     

逆导IGBT实现Snapback-Free所需最小P-emitter长度的理论计算

A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor （RC-IGBT） with field-stop structure is proposed. The n-buffer resis- tances above the p-emitter region with anode geometries of linear strip, circular and annular type are calculated, and based on this, the minimum p-emitter lengths of those three geometries are given and verified by simulation. It is found that good agreement was achieved between the numerical calculation and simulation results. Moreover, the calculation results show that the annular case needs the shortest p-emitter length for RC-IGBT to be snapback-free.     

互补横向绝缘栅双极晶体管的模型与特性

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型.根据双极传输理论,考虑电导调制效应、闭锁效应、反向注入及电流的多维效应,导出一种漂移宽基区双极—MOS器件的电路网络模型.首次将此模型直接嵌入SPICE3A.7中.计算CLIGBT在不同栅压和横向电阻下的静态闭锁特性及在不同漂移区长度和不同PMOS宽长比下的瞬态闭锁特性.由此可解决含有CL-lGBT等BIMOS类器件的高压集成电路HVIC的设计问题.     

一种有强健的续流开关的新型槽栅逆导IGBT

The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.