在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为110nm的W0.95Ni0.05金属薄膜应变条在InGaAsP/InP双异质结构中形成的应力场分布,及由应力场分布引起的折射率变化.在W0.95Ni0.05金属薄膜应变条下半导体中0.2-2μm深度范围内,由应变引起条形波导轴中央的介电常数ε相应增加2.3×10-1-2.2×10-2(2μm应变条宽)和1.2×10-1-4.1×10-2(4μm应变条宽).同时,测量了由W0.95Ni0.05金属薄膜应变条所形成的InGaAsP/InP双异质结光弹效应波导结构导波的近场光模分布.从理论计算和实验结果两方面证实了InGaAsP/InP双异质结光弹效应波导结构对侧向光具有良好的限制作用.     

光弹效应在光电子器件中的应用

在直流负偏压120V作用下利用射频溅射和光刻剥离技术在InGaAsP/InP双异质结结构外延片表面淀积110nm厚、宽为2μm的W0.95Ni0.05金属薄膜应变条. 实验测得W0.95Ni0.05金属薄膜应变条边缘单位长度产生9.7×105dyn/cm压应变力.在这样压应变力作用下,W0.95Ni0.05金属薄膜应变条下InGaAsP/InP 双异质结结构内0.2～2μm深度范围内形成的条形波导的导波强度为1.5×10-3至1.7 ×10-1.与由W和SiO2应变薄膜所形成的光弹波导及其光弹光电子器件相比较,由W 0.95Ni0.05金属薄膜应变条形成的光弹效应波导结构在平面型光电子器件中有着更重要的实际应用.     

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P     

GSMBE生长1.84um波长InGaAs／InGaAsP应变量子阱激光器

报道了GSMBE方法生长波长1.84um的InGaAs/InGaAsP/InP应变激光器,40um条宽、800um腔长的平面电极条形结构器件,室温下以脉冲方式激射,20℃下阈值电流密度为3.8kA/cm^2,外微分量子效率为9.3%。     

GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron Wavelength

报道了GSMBE方法生长波长1.84μm的InGaAs/InGaAsP/InP应变量子阱激光器．40μm条宽、800μm腔长的平面电极条形结构器件,室温下以脉冲方式激射,20℃下阈值电流密度为3.8kA／cm2,外微分量子效率为9.3%．     

由WNi金属薄膜形成光弹波导结构的研究

平面型光电子器件具有易集成的特点,所以它一直是人们感兴趣的研究课题．光弹效应光电子器件是一种适合光电子集成的新颖平面型器件结构．自７０年代中期,人们就开始研制平面图ＩＩＩ－Ｖ族化合物半导体材料的光弹效应波导器件．然而由于不易控制引入半导体内的应力场分布,尤其是引入应力场分布的热稳定性差,因而这种平面型波导器件的制作技术没有得到广泛地使用．最近发现利用金属与半导体间的界面反应,或者样品在直流负偏压作用下射频溅射倔强系数大的金属薄膜于ＩＩＩ－Ｖ族化合物半导体表面,使金属薄膜下的半导体内形成稳定的应力…     

Ge_(0.05)Si_(0.95)/Si脊形光波导的光场分析及设计

利用有效折射率法分析了Ge0.05Si0.95／Si脊形光波导的光场分布，得到了这种光波导在传输单模时内脊高b、外脊高h和脊宽W的合理取值，还为其它光波导器件的设计奠定了基础。     

GHz带宽的双异质波导InGaAsP/InP光调制器/开关

本文提出并证明了一种新型的双异质平凸波导InGaAsP/InP电一光定向耦合调制器/开关。这种调制器/开关适合于单片集成光学。所制造的器件在1.3μm波长下具有低的光损耗(4dB/cm)和高的调制带宽(1GHz)。     

InP/InGaAsP脊波导的单模特性与偏振特性研究

以InP/InGaAsP脊形波导结构为研究对象,采用有限元算法(FEM),系统地仿真分析了在固定芯层厚度的情况下,不同脊高和脊宽条件下脊形波导的单模特性和偏振特性.在芯层厚度一定的情况下,脊宽越窄,刻蚀深度越浅,波导的传输模式越接近单模.在深刻蚀情况下,脊波导模双折射系数受到脊宽的影响较大,波导的偏振不敏感性较差;在浅刻蚀情况下,模双折射系数(△n=nTE-nTM)受到脊宽和脊高的影响较为微弱,稳定在1.2×10-3.相关仿真和分析为基于InP/InGaAsP脊波导的光电子器件的结构设计提供了一定的理论支持.     

新的1.62微米波长InGaAsP/InP隐埋异质结激光器

<正> 最近日本东工大成功地制备了1.62微米波长的 InGaAsP/InP 隐埋异质结激光器。器件的条宽3～5微米,腔长310～330微米,最低的室温脉冲阈值电流为25毫安,室温连续波阈值为37毫安,三倍阈值以上获得单横模工作。器件的工艺步骤是:在含有防回熔层的双异质结片子上用化学汽相淀积法形成 SiO_2膜,并用普通的光刻技术形成沿(110)方向的5～8微米宽的条,接着用 Br-CH_3OH 腐蚀2微米深,然后用4HCl-H_2O 溶液在0～1℃下选择腐蚀2分钟以去除 InP 部分(腐蚀     

A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators

A novel processing technique has been developed to fabricate planar electroabsorption waveguide modulators in compound semiconductor heterostructures. The lateral confinement of light is achieved by introducing controllable, reproducible, and stable stresses into semiconductor heterostructures using WNi surface stressor stripes, which also serve as electrodes for the waveguide modulators. Self-aligned helium implantation is employed to achieve electrical isolation using the Stressors as the templates for the ion masks. An increase as large as 33000 times has been obtained in the dc resistance between the neighboring waveguide modulators 25 μm apart. Propagation loss of 1.7 dB/cm is observed in the photoelastic waveguides at a wavelength of 1.53 μm following the He implantation. A post-implant thermal annealing at 310°C for 40 min increases the dc resistance between the neighboring devices to the maximum value, and at the same time reduces the optical loss to its value before ion implantation (less than 1 dB/cm). Using a combination of the photoelastic effect and helium implantation, planar InGaAsP/InP Franz-Keldysh-effect waveguide modulators 430 μm long with a 10 dB extinction ratio at 3 V for the TM mode have been fabricated. Planar electroabsorption quantum-confined Stark effect waveguide modulators have also been demonstrated. This planar device processing technique may prove valuable in future photonic integrated circuit technology.     

1．55μm InGaAsP／InPDH激光器中的0．95μm发光带与Auger复合

报道了在１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ激光器中发现的０．９５μｍ波长高能发光峰的一系列实验结果，并通过分析肯定了ＩｎＧａＡｓＰ有源区的Ａｕｓｅｒ复合是造成载流子向两侧ＩｎＰ限制层漏泄的主要原因，也是影响１．５５μｍＩｎＧａＡｓＰ／ＩｎＰＤＨ激光器Ｔ０值的主要因素。     

Directional light output from photonic-wire microcavity semiconductor lasers

We have obtained directional light output from a recently realized InGaAsP photonic-wire microcavity ring lasers. The output was achieved by fabricating a 0.45-/spl mu/m-wide U-shape waveguide next to a 10-/spl mu/m diameter microcavity ring laser. The laser has a threshold pump power of around 124 /spl mu/W when optically pumped at 514 nm. It is comparable to the former structure without output coupling. The output coupling efficiency can be controlled carefully by choosing the spacing between the laser cavity and the waveguide.     

InGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property

A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.     

1 W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification

A 1 W record singlemode fibre coupled output power using 1460 nm InGaAsP/InP non-tapered buried ridge lasers has been demonstrated. The impact of the bandgap of the passive quaternary waveguide on internal loss was investigated. Optimised design allows internal losses as low as 3.3 cm/sup -1/, external efficiency of 0.46 W/A for a 3 mm-long laser and symmetrical (12/spl deg//spl times/12/spl deg/) far-field pattern.     

Selective growth of InP on patterned,nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

The effects of indium sources, mask materials and etched mesa profiles on growth mor-phology of Fe-doped semi-insulating InP on patterned, nonplanar InP substrates were studied for low-pressure organometallic vapor phase epitaxy (OMVPE). The presence or absence of polycrystalline InP layers deposited on the mask was found to depend on the indium source but not on the mask material. Trimethylindium was found to be the preferable indium source for prevention of polycrystalline InP deposits on the mask. The etched mesa shape was found to dominate the final geometry of the OMVPE re-grown InP layer. Inclusion of an interfacial layer of 1.16 μm bandgap wavelength InGaAsP between the dielectric mask and InP substrate produces a favorable mesa shape by con-trolling the level of undercut during mesa etching, so as to form a smooth mesa profile. After selective regrowth of InP over the resulting mesa, a planar surface is typically achieved for mesa stripes with a mask overhang length as long as 2.6 μm and a mesa height as high as 4 μm.     

A simple laterally tapered waveguide for low-loss coupling tosingle-mode fibers

Low-loss coupling between semiconductor photonic devices and single-mode fibers is achieved using a simple InP/InGaAsP tapered waveguide. The proposed simple structure has a small and nearly square guiding core at its output facet. In this structure, the output field has a non-Gaussian profile, but low-pass filter coupling can be achieved by optimizing the design of the guiding core sizes. The waveguide is composed of a laterally tapered InGaAsP guiding layer and an InP cladding region on an InP substrate, facilitating integration of the waveguide with active devices using conventional processes. The waveguide is shown to have a total insertion loss of 2.6 dB, including a coupling loss of 0.9 dB and large ±2.5-μm misalignment tolerance in lateral and vertical directions with single-mode filters     

Photovoltaic properties of 0.95-eV p-n InGaAsP homojunction solarcells prepared by liquid-phase epitaxy

High-performance 0.95-eV p-n InGaAsP homojunction solar cells fabricated by liquid-phase epitaxy (LPE) are discussed. The best conversion efficiency obtained from cells with overlying InP filters under one-sun AM1.5 global illumination is 6.5%. The corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.52 V, 18.2 mA/cm², and 76%, respectively. These results suggest that the 0.95-eV InGaAsP solar cell is suitable as a bottom cell for multijunction solar cells built on InP substrates     

Highly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structure

The authors describe the design procedure of a highly efficient waveguide p-i-n photodiode. The efficiency of the waveguide InP/InGaAsP ( lambda /sub g/=1.3 mu m)/InGaAs/InGaAsP ( lambda /sub g/=1.3 mu m)/InP p-i-n photodiode is calculated using the step-segment method and overlap-integral between the optical field of a fiber and that of the photodiode. A remarkably high coupling efficiency to a fiber can be obtained by using a multimode waveguide structure. The fabricated device has an external quantum efficiency of 68% as well as 3 dB bandwidth of higher than 40 GHz at a 1.55 mu m wavelength.<>     

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T ₀ = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T ₀ and the band-gap width of the waveguide layers is found.