A 43-Gb/s full-rate clock transmitter in 0.18-/spl mu/m SiGe BiCMOS technology

A 43-Gb/s full-rate clock transmitter chip for SONET OC-768 transmission systems is reported. The IC is implemented in a 0.18-/spl mu/m SiGe BiCMOS technology featuring 120 GHz f/sub T/ and 100 GHz f/sub max/ HBTs. It consists of a 4:1 multiplexer, a clock multiplier unit, and a frequency lock detector. The IC features clock jitter generation of 260 fs rms and dissipates 2.3 W from a -3.6-V supply voltage. Measurement results are compared to a previously reported half-rate clock transmitter designed using the same technology.     

3.5-Gb/s×4-ch Si bipolar LSI's for optical interconnections

The 3.5-Gb/s, 4-ch transmitter and receiver LSI's described here include a 5-to-1 multiplexer, a 1-to-5 demultiplexer, and analog PLL circuits that can generate high-speed clock (3.5 GHz) and retimed data. The chips make it possible to connect twenty pairs of 700-Mb/s electrical ports (14-Gb/s throughput) without any external elements even for the PLL. Both the transmitter and receiver LSI are 4.5-mm-square and are fabricated by a 40-GHz 0.5-μm Si bipolar process. The transmitter LSI dissipates 2.5 W, and the receiver LSI dissipates 3.6 W. Both have -4.5- and -2-V supply voltages     

A 0.18-/spl mu/m SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems

A 43-Gb/s receiver (Rx) and transmitter (Tx) chip set for SONET OC-768 transmission systems is reported. Both ICs are implemented in a 0.18-/spl mu/m SiGe BiCMOS technology featuring 120-GHz f/sub T/ and 100 GHz f/sub max/. The Rx includes a limiting amplifier, a half-rate clock and data recovery unit, a 1:4 demultiplexer, a frequency acquisition aid, and a frequency lock detector. Input sensitivity for a bit-error rate less than 10/sup -9/ is 40 mV and jitter generation better than 230 fs rms. The IC dissipates 2.4 W from a -3.6-V supply voltage. The Tx integrates a half-rate clock multiplier unit with a 4:1 multiplexer. Measured clock jitter generation is better than 170 fs rms. The IC consumes 2.3 W from a -3.6-V supply voltage.     

A 10-Gb/s CMOS CDR and DEMUX IC With a Quarter-Rate Linear Phase Detector

This paper presents a 10-Gb/s clock and data recovery (CDR) and demultiplexer IC in a 0.13-mum CMOS process. The CDR uses a new quarter-rate linear phase detector, a new data recovery circuit, and a four-phase 2.5-GHz LC quadrature voltage-controlled oscillator for both wide phase error pulses and low power consumption. The chip consumes 100 mA from a 1.2-V core supply and 205 mA from a 2.5-V I/O supply including 18 preamplifiers and low voltage differential signal (LVDS) drivers. When 9.95328-Gb/s 2³¹-1 pseudorandom binary sequence is used, the measured bit-error rate is better than 10^-15 and the jitter tolerance is 0.5UIpp, which exceeds the SONET OC-192 standard. The jitter of the recovered clock is 2.1 psrms at a 155.52MHz monitoring clock pin. Multiple bit rates are supported from 9.4 Gb/s to 11.3 Gb/s     

A 10-GB/s SONET-compliant CMOS transceiver with low crosstalk and intrinsic jitter

A 4:1 SERDES IC suitable for SONET OC-192 and 10-Gb/s Ethernet is presented. The receiver, which consists of a limiting amplifier, a clock and data recovery unit, and a demultiplexer, locks automatically to all data rates in the range 9.95-10.7 Gb/s. At a bit error rate of less than 10/sup -12/, it has a sensitivity of 20 mV. The transmitter comprises a clock multiplying unit and a multiplexer. The jitter of the transmitted data signal is 0.2 ps RMS. This is facilitated by a novel notched inductor layout and a special power supply concept, which reduces cross-coupling between the transmitter and receiver. Integrated in a 0.13-/spl mu/m CMOS technology, the total power consumption from both 1.2- and 2.5-V supplies is less than 1 W.     

A 3.125-Gb/s clock and data recovery circuit for the 10-Gbase-LX4 Ethernet

A 3.125-Gb/s clock and data recovery (CDR) circuit using a half-rate digital quadricorrelator frequency detector and a shifted-averaging voltage-controlled oscillator is presented for 10-Gbase-LX4 Ethernet. It can achieve low-jitter operation and improve pull-in range without a reference clock. This CDR circuit has been fabricated in a standard 0.18-/spl mu/m CMOS technology. It occupies an active area of 0.6 /spl times/ 0.8 mm/sup 2/ and consumes 83 mW from a single 1.8-V supply. The measured bit-error rate is less than 10/sup -12/ for 2/sup 7/ - 1 PRBS 3.125-Gb/s data. It can meet the jitter tolerance specifications for the 10-Gbase-LX4 Ethernet application.     

A CMOS 10-gb/s SONET transceiver

This paper presents a single-chip SONET OC-192 transceiver (transmitter and receiver) fabricated in a 90-nm mixed-signal CMOS process. The transmitter consists of a 10-GHz clock multiplier unit (CMU), 16:1 multiplexer, and 10-Gb/s output buffer. The receiver consists of a 10-Gb/s limiting input amplifier, clock and data recovery circuit (CDR), 1:16 demultiplexer, and drivers for low-voltage differential signal (LVDS) outputs. Both transmit and receive phase-locked loops employ a 10-GHz on-chip LC voltage-controlled oscillator (VCO). This transceiver exceeds all SONET OC-192 specifications with ample margin. Jitter generation at 10.66-Gb/s data rate is 18 mUI/sub pp/ (unit interval, peak-to-peak) and jitter tolerance is 0.6 UI/sub pp/ at 4-MHz jitter frequency. This transceiver requires 1.2V for the core logic and 1.8 V for input/output LVDS buffers. Multiple power supply domains are implemented here to mitigate crosstalk between receiver and transmitter. The overall power dissipation of this chip is 1.65 W.     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Fully electrical 40-Gb/s TDM system prototype based on InP HEMTdigital IC technologies

This paper presents a fully electrical 40-Gb/s time-division-multiplexing (TDM) system prototype transmitter and receiver. The input and output interface of the prototype are four-channel 10-Gb/s signals. The prototype can be mounted on a 300-mm-height rack and offers stable 40-Gb/s operation with a single power supply voltage. InP high-electron mobility transistor (HEMT) digital IC's perform 40-Gb/s multiplexing/demultiplexing and regeneration. In the receiver prototype, unitraveling-carrier photodiode (UTC-PD) generates 1 V_pp output and directly drives the InP HEMT decision circuit (DEC) without any need for an electronic amplifier. A clock recovery circuit recovers a 40-GHz clock with jitter of 220 fs_pp from a 40-Gb/s nonreturn-to-zero (NRZ) optical input. The tolerable dispersion range of the prototype within a 1-dB penalty from the receiver sensitivity at zero-dispersion is as wide as 95 ps/nm, and the clock phase margin is wider than 70° over almost all the tolerable dispersion range. A 100-km-long transmission experiment was performed using the prototype. A high receiver sensitivity [-25.1 dBm for NRZ (2⁷-1) pseudorandom binary sequence (PRBS)] was obtained after the transmission. The 40-Gb/s regeneration of the InP DEC suppressed the deviation in sensitivity among output channels to only 0.3 dB. In addition, four-channel 40-Gb/s wavelength-division-multiplexing (WDM) transmission was successfully performed     

An HDMI Cable Equalizer With Self-Generated Energy Ratio Adaptation Scheme

This brief presents an adaptive equalizer for high-definition-multimedia-interface (HDMI) systems with a new adaptation scheme by comparing the energy ratio in high-frequency and low-frequency bands of the equalized signal with a self-generated energy ratio. The self-generated energy ratio tracks process, voltage, and temperature variations to overcome the problem with preset energy ratio adaptation. Fabricated in 0.5- mum SiGe BiCMOS technology, the adaptive equalizer occupies 0.25 mm² and consumes 108 mW from 3.3-V voltage supply at 2.25-Gb/s data rate. Measurement results show that it can automatically adapt to up to 10-m HDMI cables, achieving 0.1-UI peak-to-peak jitter in equalized signals.     

OC-192 transmitter and receiver in standard 0.18-/spl mu/m CMOS

This paper presents the first fully integrated SONET OC-192 transmitter and receiver fabricated in a standard 0.18-/spl mu/m CMOS process. The transmitter consists of an input data register, 16-b-wide first-in-first-out (FIFO) circuit, clock multiplier unit (CMU), and 16:1 multiplexer to give a 10-Gb/s serial output. The receiver integrates an input amplifier for 10-Gb/s data, clock and data recovery circuit (CDR), 1:16 demultiplexer, and drivers for low-voltage differential signal (LVDS) outputs. An on-chip LC-type voltage-controlled oscillator (VCO) is employed by both the transmitter and receiver. The chipset operates at multiple data rates (9.95-10.71 Gb/s) with functionality compatible with the multisource agreement (MSA) for 10-Gb transponders. Both chips demonstrate SONET-compliant jitter characteristics. The transmitter 10.66-GHz output clock jitter is 0.065 UI/sub pp/ (unit interval, peak-to-peak) over a 50-kHz-80-MHz bandwidth. The receiver jitter tolerance is more than 0.4 UI/sub pp/ at high frequencies (4-80 MHz). A high level of integration and low-power consumption is achieved by using a standard CMOS process. The transmitter and receiver dissipate a total power of 1.32 W at 1.8 V and are packaged in a plastic ball grid array with a footprint of 11/spl times/11 mm/sup 2/.     

A 20-Gb/s 0.13-/spl mu/m CMOS serial link transmitter using an LC-PLL to directly drive the output multiplexer

A 20-Gb/s transmitter is implemented in 0.13-/spl mu/m CMOS technology. An on-die 10-GHz LC oscillator phase-locked loop (PLL) creates two sinusoidal 10-GHz complementary clock phases as well as eight 2.5-GHz interleaved feedback divider clock phases. After a 2/sup 20/-1 pseudorandom bit sequence generator (PRBS) creates eight 2.5-Gb/s data streams, the eight 2.5-GHz interleaved clocks 4:1 multiplex the eight 2.5-Gb/s data streams to two 10-Gb/s data streams. 10-GHz analog sample-and-hold circuits retime the two 10-Gb/s data streams to be in phase with the 10-GHz complementary clocks. Two-tap equalization of the 10-Gb/s data streams compensate for bandwidth rolloff of the 10-Gb/s data outputs at the 10-GHz analog latches. A final 20-Gb/s 2:1 output multiplexer, clocked by the complementary 10-GHz clock phases, creates 20-Gb/s data from the two retimed 10-Gb/s data streams. The LC-VCO is integrated with the output multiplexer and analog latches, resonating the load and eliminating the need for clock buffers, reducing power supply induced jitter and static phase mismatch. Power, active die area, and jitter (rms/pk-pk) are 165 mW, 650 /spl mu/m/spl times/350 /spl mu/m, and 2.37 ps/15 ps, respectively.     

A PLL-based 2.5-Gb/s GaAs clock and data regenerator IC

A GaAs IC that performs clock recovery and data retiming functions in 2.5-Gb/s fiber-optic communication systems is presented. Rather than using surface acoustic wave (SAW) filter technology, the IC employs a frequency- and phase-lock loop (FPLL) to recover a stable clock from pseudo-random non-return-to-zero (NRZ) data. The IC is mounted on a 1-in×1-in ceramic substrate along with a companion Si bipolar chip that contains a loop filter and acquisition circuitry. At the synchronous optical network (SONET) OC-48 rate of 2.488 Gb/s, the circuit meets requirements for jitter tolerance, jitter transfer, and jitter generation. The data input ambiguity is 25 mV while the recovered clock has less than 2° rms edge jitter. The circuit functions up to 4 Gb/s with a 40-mV input ambiguity and 2° RMS clock jitter. Total current consumption from a single 5.2-V supply is 250 mA     

A 6.0-mW 10.0-Gb/s Receiver With Switched-Capacitor Summation DFE

A low-power receiver with a one-tap decision feedback equalization (DFE) was fabricated in 90-nm CMOS technology. The speculative equalization is performed using switched-capacitor-based addition at the front-end sample-hold circuit. In order to further reduce the power consumption, an analog multiplexer is used in the speculation technique implementation. A quarter-rate-clocking scheme facilitates the use of low-power front-end circuitry and CMOS clock buffers. The receiver was tested over channels with different levels of ISI. The signaling rate with BER<10^-12 was significantly increased with the use of DFE for short- to medium-distance PCB traces. At 10-Gb/s data rate, the receiver consumes less than 6.0 mW from a 1.0-V supply. This includes the power consumed in all quarter-rate clock buffers, but not the power of a clock recovery loop. The input clock phase and the DFE taps are adjusted externally     

STS-768 multiplexer with full-rate output data retimer in InP HBT

A 16:1 STS-768 multiplexer IC has been designed and fabricated using the Vitesse Semiconductor VIP-1 process. This IC is part of a complete chip-set solution for a 40-Gb/s STS-768 optical communication transceiver module. The multiplexer IC features a full-rate clock multiplication unit and a data retimer in the output stage to reduce duty-cycle distortion and jitter in the output data eye. Because of its strict timing requirements, this approach needs fast logic gates with a very low gate delay. The Vitesse VIP-1 process, with 150-GHz f/sub t/ and 150-GHz f/sub max/ heterojunction bipolar transistor, is an obvious choice to implement this IC. The multiplexer IC typically dissipates 3.6 W from -3.6-V and -5.2-V power supplies. This paper discusses the design and development of a 40-Gb/s 16:1 multiplexer IC including current-mode logic gate circuit design, divide-by-two, 40-GHz clock tree, voltage-controlled oscillator, clock multiplication unit, and output driver. Layout design and package design are also discussed due to their significant roles in the IC performance.     

A 1-Gb SDRAM with ground-level precharged bit line and nonboosted2.1-V word line

This paper describes the key technologies used in a 1-Gb synchronous DRAM. This DRAM was developed according to a new cell-operating concept in which a ground-level (V_ss) precharged bit line with a negative word-line reset scheme enables a nonboosted 2.1-V word-line architecture. Total power consumption is less than that of the conventional half-V_cc precharged bit-line scheme. We also propose a vernier-type, high-accuracy delay-locked-loop circuit realizing ±20-ps quantization errors for clock recovery and skew elimination     

Burst-mode clock and data recovery in optical multiaccess networks using broad-band PLLs

Broad-band phase-locked loops (PLLs) are proposed for burst-mode clock and data recovery in optical multiaccess networks. Design parameters for a charge-pump PLL-based clock and data recovery (CDR) with fast phase acquisition are derived using a time-domain model that does not assume narrow loop bandwidth or small phase errors. Implementation in a half-rate CDR circuit confirms a clock phase acquisition time of 40 ns, or 100 bits at 2.488-Gb/s rate, and data recovery at 1.244-Gb/s rate with a bit-error rate of 1/spl times/10/sup -10/ (2/sup 14/-1 pseudorandom binary sequence with Manchester-encoding). The CDR was fabricated in complementary metal-oxide-semiconductor 0.18-/spl mu/m technology in an area of 1/spl times/1 mm/sup 2/ and consumes 54 mW of power from a 1.8-V supply.     

A 10-Gb/s CMU/CDR chip-set in SiGe BiCMOS commercial technology with multistandard capability

A 10-Gb/s CMU/CDR chip-set presenting multistandard compliance with SDH/SONET and 10-GbE specifications has been fabricated in a commercial SiGe BiCMOS technology. The clock multiplier unit (CMU) features dual reference clock frequency, and the phase tracking loop uses a charge pump with low common-mode current to minimize frequency ripple; the output jitter is below 80 mUIpp. The clock and data recovery (CDR) features a 20-mV-sensitivity limiting amplifier, a 2-DFF-based decision circuit to maximize clock phase margin (CPM) and a dual-loop phase-locked loop (PLL) architecture with external reference clock. A novel phase detector topology featuring a transition density factor compensation loop has been exploited to minimize jitter. Power consumption is 480 mW and 780 mW, respectively, for the two ICs, from 3.3-V and 2.5-V power supplies     

A 40-43-Gb/s clock and data recovery IC with integrated SFI-5 1:16 demultiplexer in SiGe technology

A fully integrated OC-768 clock and data recovery IC with SFI-5 1:16 demultiplexer is designed in a 120-GHz/100-GHz (f/sub T//f/sub MAX/) SiGe technology. The 16 2.5-Gb/s outputs and additional deskew channel are compliant with the Serdes Framer Implementation Agreement Level 5 specification. The measured bit-error rate is <10/sup -15/. The measured jitter tolerance exceeds the mask specified in G.8251. The IC operates with 1.8-V and -5.2-V supplies and dissipates 7.5 W.     

Half-Rate Duobinary Transmitter Architecture for Chip-to-Chip Interconnect Applications

For a high speed duobinary transmitter clock frequency defines the transmission limit. A conventional duobinary transmitter needs a clock frequency equal to the data rate. In this work we propose a duobinary transmitter that uses a clock frequency half of the output data rate and hence achieves double the transmission rate for a given clock frequency as compared to a conventional duobinary transmitter. In the proposed transmitter the duobinary precoder is integrated into the last stage of a tree structured serializer to combine two NRZ data streams at half the transmission data rate. Two modes for the precoder have been incorporated into the design. The first mode is applicable for data transmission over copper whereas the second mode is suitable for wavelength division multiplexed optical transmission. A DLL based clock multiplier unit is employed to produce the high frequency clock with 50% duty cycle needed for the precoding operation. It incorporates a clock generation logic with integrated duty cycle control. A charge pump with dynamic current matching and a high resolution PFD are employed to reduce static phase error in locking and hence achieves improved jitter performance. A new delay cell along with automatic mode selection is proposed. To cover a wide range of data rate, the DLL is designed for a wide locking range and maintains almost 50% duty cycle. The design is implemented in 1.8-V, 0.18 μm Digital CMOS technology with an f _T of 27 GHz. Simulations shows that, the duobinary transmitter circuit works up-to 10 Gb/s and consumes 60 mW of power.