A Low-Loss Ku-Band Monolithic Analog Phase Shifter

A GaAs monolithic Ku-band analog phase shifter integrating 90° branch line coupler with planar varactor diodes has been fabricated for the first time. A phase shift of 109° +- 3° with an insertion loss of 1.8+-0.3 dB was measured from 16 to 18 GHz. A 360° phase shifter with 4.2+-0.9 dB insertion loss was realized in the same frequency range by connecting three phase-shifter chips in series. To our knowledge, this is the lowest insertion loss obtained by a 360° Ku-band phase shifter using monolithic circuits. In addition, hyperabrupt varactors using nonuniform doping profiles increased the phase shift by more than 30° and produced a more linear dependence of phase shift on control voltage.     

低损耗衬底上实现无源低通滤波器

分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.     

低损耗衬底上实现无源低通滤波器

分析比较了不同种类衬底上无源器件(片上电感和电容)的损耗机理,在OPS(氧化多孔硅)和HR(高阻硅)低损耗衬底上分别实现了片上低通滤波器.为了研究衬底损耗,设计了平面螺旋电感,其Q值在两种衬底上的仿真结果都超过了20.在OPS衬底上的低通滤波器实测-3dB带宽为2.9GHz,通带插入损耗在500MHz为0.87dB;在HR衬底上的低通滤波器实测-3dB带宽为2.3GHz,通带插入损耗在500MHz为0.42dB.     

A CMOS Monolithic Image-Reject Filter

A CMOS inductorless image-reject filter based on active RLC circuitry is discussed and designed with the emphasis on low-noise, low-power, and gigahertz-range circuits. Two -enhancement techniques are utilized to circumvent the low characteristics inherent in the simple feedback circuit. The frequency tuning is almost independent of tuning, facilitating the design of the automatic tuning circuitry. The stability and the tuning scheme of the filter are also discussed. Simulations using 0.6 m CMOS technology demonstrate the feasibility of the tunable image-reject filter for GSM wireless applications. Simulation results show 4.75 dB voltage gain, 9.5 dB noise figure, and –20 dBm IIP3 at a passband centered at 947 MHz. The image signal suppression is 60 dB at 1089 MHz and the power consumption is 27 mW.     

A New Class of Low-Loss High-Linearity Electronically Reconfigurable Microwave Filter

A novel electronically reconfigurable microwave bandpass filter based on a switched delay-line approach is presented. In contrast to conventional tunable filters, the approach enables the lossy and nonlinear switching elements to be used as part of the coupling elements rather than within the resonators. Therefore, the filter distinguishes itself through its ability to provide a wide tuning bandwidth with low passband loss and high linearity. Theoretical analysis of the approach is presented in this paper. The feasibility of the approach has been experimentally verified with microstrip circuit prototypes. The filter produced a maximum passband loss of 1.7 dB and a third-order intercept point of $>$32 dBm with 35% tuning bandwidth.      

一种特殊的单片晶体滤波器模块

介绍了一种进口中频滤波器微电路模块.该中频微电路模块是中心频率为12.1 MHz,3 dB带宽240 kHz,体积仅35 mm×25 mm×5 mm的一种复合型宽带有源单片式晶体滤波器,其采用叉指结构对单片晶体滤波器的性能进行改善.通过实验证明叉指结构对单片晶体滤波器具有改善矩形系数,增加带外抑制和精密微调频率的作用.     

A Varactor-Tunable High Impedance Surface With a Resistive-Lumped-Element Biasing Grid

A high impedance surface consisting of metallic square patches electrically connected through vias to the ground plane beneath them is made tunable. Tunability is achieved by connecting adjacent patches with varactor diodes thus altering the capacitance between the patches and hence the surface's resonance frequency. The varactor diodes are biased with the aid of a resistive grid. The grid is made resistive using surface mount resistors. Using an approximate equivalent circuit the effect of the varactor diode resistance is investigated for normal plane wave incidence. It is shown that at resonance, a small varactor resistance may lead to a significant absorption. The potential use of a waveguide simulator to characterize approximately the performance of the proposed metamaterial structure is investigated.     

三次泛音单片式、高频及高阻带晶体滤波器

研究了三次泛音模式下单片式晶体滤波器的设计方法、制作工艺。通过优化滤波器结构、合理控制晶片镀回频率等方法,实现了晶体滤波器的高阻带和高杂波抑制。制作出一种工作频率为41.4 MHz,响应模式为三次泛音的单片式晶体滤波器。结果表明,该晶体滤波器的-1 dB带宽为2.9 kHz,带内波动为0.3 dB,阻带抑制为82 dB。     

A Low-Loss Branching Filter for Broad Widely Spaced Bandwidths (Short Papers)

A waveguide filter which separates the 4-GHz band the combined 4-, 6-, and 11-GHz common-carrier bands with a loss of only 0.05 dB is described. The input is limited to a single polarization, but dual polarizations can be accommodated by using two such filters in combination with a polarization coupler. The filter also has low insertion losses at 6 and 11 GHz: 0.1 dB and 0.06 dB, respectively, a good return loss, 32 dB, and a short length, 2 1/2 ft. Additionally, it has high power-handling capability, good isolation properties, and good mode purity.     

一种Camshift优化的粒子滤波跟踪算法

针对传统粒子滤波目标跟踪算法中用先验转移概率作分布函数时计算量大、粒子退化严重且未考虑最新观察信息等缺点,提出了一种Camshift优化的粒子滤波跟踪算法.算法首先在粒子滤波框架下,利用Camshift算法使粒子向目标状态的最大后验核密度估计方向移动.然后针对目标所处环境的不同,提出了适时调整参与Camshift算法优化的粒子数的方法,既考虑了跟踪算法的效率又考虑了粒子的多样性.跟踪结果表明,该算法的跟踪性能明显优于传统的粒子滤波算法,具有很好的实时性和鲁棒性.     

A 2.4–2.5 GHz WLAN Direct-Conversion Receiver Front-End With Low-Distortion Baseband Filters

Low-distortion I/Q baseband filters interface with a 2.5 GHz RF receiver front-end configured as a Gm-cell in a direct-conversion architecture targeted towards WLAN 802.11b application. The active I/Q current-mode filters use AC current to carry the large swing of both desired and blocker signals, relaxing the voltage headroom requirement to a 1.2 V supply. An on chip master–slave automatic tuner is used to lock the filter bandwidth to a precision 20 MHz reference crystal oscillator, resulting in a $≪ ,$3% tuning accuracy and $≪, $ 0.5% I/Q bandwidth matching. The receiver achieves a 3.2 dB DSB NF, ${-}$14 dBm out-of-band IIP3, and ${+}$ 27 dBm worst case IIP2, all referred to the LNA input, while drawing 30mA from a 2.7 V supply. The chip is fabricated in a 0.5 $mu$m 46 GHz $f_{T}$ SiGe BiCMOS process. The active area is 2.54 mm$^{2}$ .      

移动通信用单片晶体滤波器

本文介绍单片晶体滤波器在移动通讯设备中的用途及特点,给出了其设计的基本方法。并给出了一个实例的指标及应用情况。     

A Low-Loss Double-Tuned Transformer

In this letter, we present a state-of-the-art, planar double-tuned transformer using high-, micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of 440 times 500 mum²and finds application in power amplifier and other matching applications. An accurate lumped-element circuit model and design tradeoffs are presented. We believe this is the first implementation of a planar microwave double-tuned transformer.     

一种新颖的横向滤波器的优化结构

在各种传输系统中，横向滤波器的结构广泛采用。本文在传统优化结构的基础上，提出了了种新的优化方法。文中详细介绍了优化结构及其在均衡器中的推广应用，通过比较说明了该结构的优化效率，并指出了这一结构的应用前景。     

Low-Loss Ku-Band Artificial Transmission Line With MEMS Tuning Capability

An artificial transmission line unit cell is presented based on the so-called composite right/left handed transmission line. It is implemented on a microelectromechanical system process on glass, and is suitable for applications such as reconfigurable leaky-wave antennas and series feed networks. The device presents state-of-the-art performance in terms of differential phase shift over losses (38$^{circ}/{rm dB}$ at 14 GHz) and quasi-zero drive power consumption. It is monolithic and has a total footprint of 4 ${rm mm}^{2}$.      

一种单片微机控制的锁相环频率合成器

本文报导我们研制的一种单片微机控制的锁相环频率合成器。它以大规模集成芯片ＭＣ１４５１４６为中心，配以参考振荡器、环路滤波器、直流放大器、压控振荡器、双模前置分频器以及单片机频率控制系统。     

单片集成CMOS二阶OTA-C连续时间模拟滤波器

以本文提出的电流提升运算跨导放大器(以下简称OTA)作有源器件,采用3微米P阱CMOS工艺制成了全集成二阶OTA-C连续时间模拟滤波器.测试结果表明:该滤波器的中心频率(带通)可由片外电信号调节,其可谓范围从18千赫至160千赫;滤波器具有恒定Q值,且其值决定于两个MOS电容值之比;当输入1伏峰值的正弦信号时,输出信号的总谐波失真(THD)不大于0.36％;选用合适的信号输入端,该滤波器还可以实现低通、带通、高通和带阻四种传递函数.     

A Temperature-to-Digital Converter Based on an Optimized Electrothermal Filter

This paper describes the design of a CMOS temperature-to-digital converter (TDC). It operates by measuring the temperature-dependent phase shift of an electrothermal filter (ETF). Compared to previous work, this TDC employs an ETF whose layout has been optimized to minimize the thermal phase spread caused by lithographic inaccuracy. To minimize electrical phase spread, the TDC's front-end consists of a wide bandwidth gain-boosted transconductor. The transconductor's output current is then digitized by a phase-domain $Sigma Delta $ modulator whose phase-summing node is realized by a chopper demodulator. To minimize the residual offset caused by the demodulator's switching action, the demodulator is located at the virtual ground nodes established by the transconductor's gain-boosting amplifiers. Measurements on 16 samples (within one batch) show that the TDC has an untrimmed inaccuracy of less than $pm hbox{0.7} ,^{circ}hbox{C}$ ($3sigma $) over the military range ($- hbox{55} ,^{circ}hbox{C}$ to 125$ ,^{circ}hbox{C}$).