CMP工艺流程控制策略综述

化学机械抛光测量技术和测量技术随着其工艺重要性的日益提高越来越成熟。测量技术在所有类型的化学机械抛光工艺流程控制中扮演了一个重要的角色,并且可以根据所使用的测量技术、其在工艺流程中所处的位置以及类型和产生的数据量以不同的方法实现。本文述评并提出了一些从现场、延伸的现场、综合的测量技术、以及其对工艺流程控制影响所普遍应用的测量技术的例子。并且还提出了65nm以及更小技术节点的测量技术以及工艺流程控制策略,在这些未来的技术中,晶片工艺控制以及每个晶圆片方法调整预计将更加苛刻。     

化学机械抛光压力控制技术研究

概述了化学机械抛光技术的发展现状,讨论分析了主要工艺参数对抛光机理的影响。重点论述了化学机械抛光工艺中不同压力控制方法及其技术特点,提出了一种新的压力控制方案,并通过实验验证了该控制技术的先进性。     

ULSI电路层间SiO_2介质CMP工艺与抛光液

阐明了化学机械抛光(CMP)工艺在集成电路制造中所发挥的关键作用,介绍了作为IC多层布线层间介质SiO2的化学机械抛光机理及其抛光液在化学机械抛光中扮演的重要角色,着重分析了影响SiO2介质化学机械抛光质量的主要因素并在此基础上提出CMP工艺的优化工艺条件以及今后SiO2介质CMP研究重点。     

最小二乘法在抛光设备压力控制中的应用

在化学机械抛光(CMP)过程中,压力是影响晶片最终抛光效果的主要因素之一,采用合理的压力控制方法,把压力控制在一定的范围内才能满足化学机械抛光的工艺要求。运用最小二乘法拟合曲线的算法实现压力值精确控制的设计方法,并通过MINITAB仿真及抛光实验验证其可行性。     

CMOS工艺中钨的化学机械抛光技术

介绍了深亚微米CMOS集成电路中研制的关键技术———钨化学机械抛光,比较了化学机械抛光技术与传统反应离子回刻法在金属层与层之间的垂直连接中的优缺点,并指出了钨化学机械抛光工艺中尚存的一些问题,最后对该工艺进行了总结与展望。     

基于MVC架构的CMP软件模块开发研究

针对化学机械抛光技术(CMP)软件系统复杂、工艺控制种类繁多、运行参数数据量大等问题,提出将MVC(Model-View-Controller)架构应用于CMP软件设计的方法;阐述了MVC架构在CMP软件设计中的应用以及在事件管理程序设计(模块3)和信息筛选中的应用;基于MVC架构的软件设计方法降低了软件模块之间的耦合性,提高了程序的复用性和可维护性。     

300mm硅片化学机械抛光技术分析

化学机械抛光是单晶硅衬底和集成电路制造中的关键技术之一,然而,传统的化学机械抛光技术还存在一定的缺点或局限性,为了得到更好的硅片平整度和表面洁净度,在300mm硅片的生产中采用了双面化学机械抛光技术.对双面化学机械抛光的优点以及系统变量对抛光速度和抛光质量的影响进行了详细地分析.     

LiTaO3晶片CMP过程的化学去除机理研究

通过化学腐蚀方法研究了liTaO3(LT)晶片的化学机械抛光的化学腐蚀机理,研究了LiTaO3单晶的化学机械抛光过程腐蚀作用的主要影响因素及其影响规律,获得了LiTaO3晶片CMP过程有效的氧化剂和稳定剂.采用X衍射测量抛光表面的结构变化,分析了晶片表面在不同抛光液条件下发生的变化.研究结果为优化LiTaO3 CMP工艺参数,进一步探讨化学机械抛光机理提供了依据.     

仪器面板的化学砂面处理

一、前言以喷砂作为仪器面板表面处理,给仪表的表面装饰增加了美观,但由于机械喷砂需要喷砂设备,压缩空气、排风设备等,生产效率低,劳动条件差,质量也受到限制。本工艺采用了化学法制取240～300目粗细的无米砂面,为仪器面板表面装饰增加了一个新的工艺。二、主要工艺流程及操作条件: 1.机械抛光 2.化学去油 3.化学砂面处理 4.化学抛光 5.阳极氧化 6.转移印染图形 7.封闭处理 1.机械抛光:是为了消除铝板表面的机械损伤和擦毛,以获得平整光滑的铝表面。机械抛光可根据一般金属的机械抛光工艺进行,在1000～1500转/分的布轮和无纺布轮上垂直抛光,磨料用白色抛光膏。 2.化学去油:我厂采用了上海合成洗涤厂生产的AS阳离子型表面活性剂进行面板的去油洗白的。表面活性剂不仅降低了表面张力还起到乳化,增溶发泡的作用,而且本身对碱硬水等有良好的化学稳定性等,提高     

冗余金属填充对化学机械抛光的平坦性影响研究

在深亚微米大规模集成电路制造过程中,化学机械抛光已经被广泛用来实现大范围的平坦性。化学机械抛光后的形貌非常依赖版图的样式,并且在芯片上会有很大的波动。然而,由于器件结构分布的不均匀,化学机械抛光会导致金属层的凹陷和电解质的侵蚀。解决这种现象的方法之一便是插入冗余金属来实现给定层的均匀性。本文使用中科院EDA中心开发的化学机械抛光模拟器,分析了冗余填充的尺寸,密度和形状之类的参数对化学机械抛光后表面平坦性的影响。     

CMP透明膜厚测量设备发展历程

论述了反射光谱学及椭圆偏振法的原理,根据这些原理分析了离线测量设备,并列举了具有代表性的设备Nanospec6100和KLA-TENCOR的ASET-F5X,指出离线设备的特点及其局限性;分析了集成测量平台的特点,相比于离线测量,集成测量平台可获得较高的片间非均匀性．但会造成前5～7片的浪费,列举代表性集成平台NovaScan 2040,并分析其具体的技术特点：分析了在线传感器终点检测的优越性,其具有控制薄膜形貌及终点检测的功能,结合先进过程控制,可以达到极高的平整度;结合以上分析,指出今后CMP设备的发展方向。     

Neural network based uniformity profile control of linear chemical-mechanical planarization

In this paper, a neural network based uniformity controller is developed for the linear chemical-mechanical planarization (CMP) process. The control law utilizes the metrology measurements of the wafer uniformity profile and tunes the pressures of different air-bearing zones on Lam linear CMP polishers. A feedforward neural network is used to self-learn the CMP process model and a direct inverse control with neural network is utilized to regulate the process to the target. Simulation and experimental results are presented to illustrate the control system performance. Compared with the results by using statistical surface response methods (SRM), the proposed control system can give more accurate uniformity profiles and more flexibility.     

化学机械抛光对铜互连器件的影响及失效分析

探讨了Cu化学机械抛光(CMP)工艺引起Cu互连器件失效的原因以及对可靠性的影响,对Cu CMP工艺缺陷导致器件失效的案例进行分析.由于CMP的技术特点,不可避免地会产生一些工艺缺陷和工艺误差,从而引起器件失效.必须根据标准要求,出厂或封装前对圆片进行芯片功能参数测试和严格的镜检,以便在封装前剔除存在潜在工艺缺陷的芯片,达到既定可靠性要求.     

On the Wafer/Pad Friction of Chemical–Mechanical Planarization (CMP) Processes—Part I: Modeling and Analysis

Friction characteristics between the wafer and the polishing pad play an important role in the chemical–mechanical planarization (CMP) process. In this paper, a wafer/pad friction modeling and monitoring scheme for the linear CMP process is presented. Kinematic analysis of the linear CMP system is investigated and a distributed LuGre dynamic friction model is utilized to capture the friction forces generated by the wafer/pad interactions. The frictional torques of both the polisher spindle and the roller systems are used to monitor in situ the changes of the friction coefficient during a CMP process. Effects of pad conditioning and patterned wafer topography on the wafer/pad friction are also analyzed and discussed. The proposed friction modeling and monitoring scheme can be further used for real-time CMP monitoring and process fault diagnosis.     

Device dependent control of chemical-mechanical polishing ofdielectric films

This paper presents a control scheme for run-to-run control of chemical-mechanical polishing (CMP). The control scheme tracks both device pattern dependent and equipment induced disturbances. The structure of the controller is such that sensitivity to qual (unpatterned blanket oxide) wafer frequency is minimized. Additionally, prethickness variation and metrology delay are accounted for in the design. Results from applying this scheme in volume production are presented     

高速全晶圆薄膜厚度均匀图像在CMP工艺快速评定中的应用

应用高速度、高点密度熏覆盖全晶圆的薄膜检测仪得到的膜厚均匀图像来对CMP工艺进行快速评定。高点密度、全晶圆的膜厚均匀图像能即时显现出CMP工艺中的非对称性膜厚均匀问题并为根源分析和工艺改进提供快速反馈。对一些用常规的稀疏抽样点薄膜测量方法难以检测到但常见的CMP工艺中导致非对称性膜厚均匀问题熏例如垫片异常熏抛光机头安装不当熏空白晶圆nanotopography等进行比较分析和探讨。     

On the Wafer/Pad Friction of Chemical–Mechanical Planarization (CMP) Processes—Part II: Experiments and Applications

This paper presents the experimental validation and some application examples of the proposed wafer/pad friction models for linear chemical–mechanical planarization (CMP) processes in the companion paper. An experimental setup of a linear CMP polisher is first presented and some polishing processes are then designed for validation of the wafer/pad friction modeling and analysis. The friction torques of both the polisher spindle and roller systems are used to monitor variations of the friction coefficient in situ . Verification of the friction model under various process parameters is presented. Effects of pad conditioning and the wafer film topography on wafer/pad friction are experimentally demonstrated. Finally, several application examples are presented showing the use of the roller motor current measurement for real-time process monitoring and control.     

An Approach for Factory-Wide Control Utilizing Virtual Metrology

In the semiconductor manufacturing industry, market demands and technology trends drive manufacturers towards increases in wafer size and decreases in device size. Application of factory-wide advanced process control (APC) techniques down to the wafer-to-wafer (W2W) level control capability is becoming the only choice to cope with the demanding situation. However, one of the main limitations in undertaking W2W control is the nonavailability of timely metrology data at the wafer level. Recently virtual metrology (VM) techniques have been proposed to provide timely wafer level metrology data; they have the potential to be used in realizing W2W control. In this paper, the VM approach to W2W control on factory level is described. VM for an individual process is realized by utilizing the preprocess metrology and the process data from the underlying tools that is generally collected in real time for fault detection purposes. The VM implementation for factory-wide run-to-run control brings unique opportunities and issues to the forefront such as dealing with expected lower quality of VM data, coordination between VM modules of cascading processes for better prediction quality, flexibility of the factory-wide controller to accommodate lower quality VM data, dynamic adjustments to the target values of individual processes by the factory-wide controller when using VM data, and dealing with metrology delays at the factory level. Near and long-term solutions are presented to address these issues in order to allow VM to be used today and become an integral part of the factory-wide APC solution for W2W control.     

CMP后的晶圆的测量和评估方法研究

综述了CMP后的晶圆测量方法,比较指出：光学干涉法适宜于测量较厚的薄膜,而椭圆偏振法精度较高,但成本高昂,适宜于测量薄的薄膜。CMP后需要检测晶圆的表面状况,列举了常用的扫描电子显微镜、原子力显微镜和光散射探测仪。扫描电子显微镜常用于特征线宽的测量,其精度可达4nm;原子力显微镜是根据范德华力的原理制造,其探测精度高达0．1nm：但二者最大的缺陷就是操作复杂,成像十分费时。散射探测仪根据光的散射理论制造。可以快捷地全表面成二维图像,是值得推荐的一种测量手段。最后,指出今后的测量技术对半导体工艺的影响。