Dielectric properties of Si3N4–SiCN composite ceramics in X-band

Si₃N₄–SiCN composite ceramics were successfully fabricated through precursor infiltration pyrolysis (PIP) method using polysilazane as precursor and porous Si₃N₄ as preform. After annealed at temperatures varying from 900 °C to 1400 °C, the phase composition of SiCN ceramics, electrical conductivity and dielectric properties of Si₃N₄–SiCN composite ceramics over the frequency range of 8.2–12.4 GHz (X-band) were investigated. With the increase of annealing temperature, the content of amorphous SiCN decreases and that of N-doped SiC nano-crystals increases, which leads to the increase of electrical conductivity. After annealed at 1400 °C, the average real and imaginary permittivities of Si₃N₄–SiCN composite ceramics are increased from 3.7 and 4.68 × 10^?3 to 8.9 and 1.8, respectively. The permittivities of Si₃N₄–SiCN composite ceramics show a typical ternary polarization relaxation, which are ascribed to the electric dipole and grain boundary relaxation of N-doped SiC nano-crystals, and dielectric polarization relaxation of the in situ formed graphite. The Si₃N₄–SiCN composite ceramics exhibit a promising prospect as microwave absorbing materials.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Si3N4-ZrB2 ceramics prepared at low temperature with improved mechanical properties

Si₃N₄-ZrB₂ ceramics were hot-pressed at 1500 °C using self-synthesized fine ZrB₂ powders containing 2.0 wt% B₂O₃ together with MgO-Re₂O₃ (Re = Y, Yb) additives. Both Si₃N₄ and ZrB₂ grains in the hot-pressed ceramics were featured with elongated and equiaxed morphology. The presence of elongated Si₃N₄ and ZrB₂ grains led to the partial texture of the ceramics under the applied pressure. Vickers hardness and fracture toughness of Si₃N₄-ZrB₂ ceramics with MgO-Re₂O₃ additives prepared at low temperature were about 19–20 GPa and 9–11 MPa m^1/2, respectively, higher than the reported values of Si₃N₄-based ceramics prepared at high temperature (1800 °C or above) under the same test method.     

Effect of Si addition on the mechanical and thermal properties of sintered reaction bonded silicon nitride

Advanced silicon nitride (Si₃N₄) ceramics were fabricated using a mixture of Si₃N₄ and silicon (Si) powders via conventional processing and sintering method. These Si₃N₄ ceramics with sintering additives of ZrO₂ + Gd₂O₃ + MgO were sintered at 1800 °C and 0.1 MPa in N₂ atmosphere for 2 h. The effects of added Si content on density, phases, microstructure, flexural strength, and thermal conductivity of the sintered Si₃N₄ samples were investigated in this study. The results showed that with the increase of Si content added, the density of the samples decreased from 3.39 g/cm³ to 2.92 g/cm³ except for the sample without initial Si₃N₄ powder addition, while the thermal diffusivity of the samples decreased slightly. This study suggested that addition of Si powder, which varied from 0 to 100%, in the starting materials might provide a promising route to fabricate cost-effective Si₃N₄ ceramics with a good combination of mechanical and thermal properties.     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

Microstructure and mechanical properties of tantalum carbide ceramics: Effects of Si3N4 as sintering aid

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si₃N₄ as sintering aid. Effects of the Si₃N₄ addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si₃N₄ reacted with TaC and tantalum oxides such as Ta₂O₅ to form a small concentration of tantalum silicides, SiC and SiO₂, with significant decrease in oxygen content in the consolidated TaC ceramics. Dense TaC ceramics having relative densities >97% could be obtained at 0.667% Si₃N₄ addition and above. Average grain size in the consolidated TaC ceramics decreased from 11 µm at 0.333 mol% Si₃N₄ to 4 µm at 2.50 mol% Si₃N₄ addition. The Young's modulus, Vickers hardness and flexural strength at room temperature of the TaC ceramic with 2.50 mol% Si₃N₄ addition was 508 GPa, 15.5 GPa and 605 MPa, respectively. A slight decrease in bending strength was observed at 1200 °C due to oxidation of the samples.     

Mechanical properties and microstructure of porous BN–SiO2–Si3N4 composite ceramics

Porous silicon nitride (Si₃N₄) ceramics incorporated with hexagonal boron nitride (h-BN) and silica (SiO₂) nanoparticles were fabricated by pressureless-sintering at relatively low temperature, in which stearic acid was used as pore-making agent. Bending strength at room and high temperatures, thermal shock resistance, fracture toughness, elastic modulus, porosity and microstructure were investigated in detail. The mechanical properties and thermal shock resistance behavior of porous Si₃N₄ ceramics were greatly influenced by incorporation of BN and SiO₂ nanoparticles. Porous BN–SiO₂–Si₃N₄ composites were successfully obtained with good critical thermal shock temperature of 800 °C, high bending strength (130 MPa at room temperature and 60 MPa at 1000 °C) and high porosity.     

The preparation of silicon nitride ceramics by gelcasting and pressureless sintering

A new gelling system based on the polymerization of hydantion epoxy resin and 3,3′-Diaminodipropylamine (DPTA) was successfully developed for fabricating silicon nitride (Si₃N₄) ceramics. The effects of pH value, the dispersant content, solid volume fraction and hydantion epoxy resin amount on the rheological properties of the Si₃N₄ slurries were investigated. The relative density of green body obtained from the solid loading of 52 vol% Si₃N₄ slurry reached up to 62.7%. As the concentration of hydantion epoxy resin increased from 5 wt% to 20 wt%, the flexural strength of Si₃N₄ green body enhanced from 5.3 MPa to 31.6 MPa. After pressureless sintering at 1780 °C for 80 min, the sintered samples exhibited the unique interlocking microstructure of elongated β-Si₃N₄ grains, which was beneficial to improve the mechanical properties of Si₃N₄ ceramics. The relative density, flexural strength and fracture toughness of Si₃N₄ ceramics reached 97.8%, 687 MPa and 6.5 MPa m^1/2, respectively.     

Mechanical and dielectric properties of porous Si2N2O–Si3N4 in situ composites

Mechanical and dielectric properties of porous Si₂N₂O–Si₃N₄ in situ composites fabricated for use as radome by gel-casting process were investigated. The flexural strength of the Si₂N₂O–Si₃N₄ ceramics is 230.46 ± 13.24 MPa, the complex permittivity of the composites varies from 4.34 to 4.59 and the dissipation factor varies from 0.00053 to 0.00092 from room temperature to elevated temperature (1150 °C) at the X-band. In the porous regions, some Si₂N₂O fibers (50–100 nm in diameter) are observed which may improve the materials properties.     

Thermal conductivity of porous SiC composite ceramics derived from paper precursor

Biomorphic porous SiC composite ceramics were produced by chemical vapor infiltration and reaction (CVI-R) technique using paper precursor as template. The thermal conductivity of four samples with different composition and microstructure was investigated: (a) C-template, (b) C-SiC, (c) C-SiC–Si₃N₄ and (d) SiC coated with a thin layer of TiO₂. The SiC–Si₃N₄ composite ceramic showed enhanced oxidation resistance compared to single phase SiC. However, a key property for the application of these materials at high temperatures is their thermal conductivity. The later was determined experimentally at defined temperatures in the range 293–373 K with a laser flash apparatus. It was found that the thermal conductivity of the porous ceramic composites increases in the following order: C-template < C-SiC < C-SiC–Si₃N₄ < SiC–TiO₂. The results were interpreted in regard to the porosity and the microstructure of the ceramics.     

In-situ reaction synthesis of porous Si2N2O-Si3N4 multiphase ceramics with low dielectric constant via silica poly-hollow microspheres

In the present work, a novel and facile process has been proposed to fabricate porous Si₂N₂O-Si₃N₄ multiphase ceramics with low dielectric constant (ε_r＜4.0). Since silica poly-hollow microspheres could serve as the source of SiO₂ and the pore-forming agent, they have been introduced into Si₃N₄ slurry through the gelcasting technique. This process is benefited from the liquid phase sintering reaction between SiO₂ and Si₃N₄ with the aid of sintering additives, leading to in-situ synthesis of Si₂N₂O phase and porous structure. The content of silica poly-hollow microspheres has great influence on the properties of the final products. It indicates that Si₂N₂O phase would become the major phase when the content of silica poly-hollow microspheres was above 25 wt%. Furthermore, the micromorphology results reveal that the content of pores with many smaller aggregate microspheres increases as microspheres amount rises. As a result, along with the addition of silica poly-hollow microspheres, the bulk density decreases to 1.32±0.01 g/cm³, and open porosity ranges from 28.4±0.4% to 52.0±0.5%. Porous Si₂N₂O-Si₃N₄ multiphase ceramics prepared with 25 wt% silica poly-hollow microspheres addition possess flexural strength of 42.3±3.8 MPa, low dielectric constant of 3.31 and loss tangent of 1.93×10⁻³. It turns out to be an effective method to fabricate porous Si₂N₂O-Si₃N₄ composites with excellent mechanical and dielectric properties, which could be applied to radome materials.     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Graded Si3N4 ceramics with hard surface and tough core by two-step hot pressing

Graded Si₃N₄ ceramics with hard surface and tough core were prepared by two-step hot pressing with the homogenous starting composition. The inner Si₃N₄ layer was firstly hot-pressed at 1800 °C, subsequently covered with Si₃N₄ powders on both sides, and finally hot-pressed at 1600 °C. After two-step hot pressing, the resulting ceramics exhibited a zoned microstructure, differentiated by the phase assemblage of Si₃N₄ and grain size. The outer layers were well bonded to the inner layer. The outer layer exhibited bimodal and fine-grained microstructure, whereas the inner layer exhibited bimodal and coarse-grained microstructure. Vickers hardness of outer and inner layers were 18.1±0.2 GPa and 16.0±0.2 GPa, respectively, and fracture toughness were 4.2±0.1 MPa m^1/2 and 5.5±0.2 MPa m^1/2, respectively.     

Physical,thermal and ablative performance of CVI densified urethane-mimetic SiC preforms containing in situ grown Si3N4 whiskers

A two-step process has been developed for silicon carbide (SiC) coated polyurethane mimetic SiC preform containing silicon nitride (Si₃N₄) whiskers. SiC/Si₃N₄ preforms were prepared by pyrolysis/siliconization treatment at 1600 °C, of powder compacts containing rigid polyurethane, novolac and Si, forming a porous body with in situ grown Si₃N₄ whiskers. The properties were controlled by varying Si/C mole ratios such as 1–2.5. After densification using a chemical vapour infiltration, the resulting SiC/Si₃N₄/SiC composites showed excellent oxidation resistance, thermal conductivity of 4.32–6.62 Wm⁻¹ K⁻¹, ablation rate of 2.38 × 10⁻³ − 3.24 × 10⁻³ g cm⁻² s and a flexural strength 43.12–55.33 MPa for a final density of 1.39–1.62 gcm⁻³. The presence of a Si₃N₄ phase reduced the thermal expansion mismatch resulting in relatively small cracks and well-bonded layers even after ablation testing. This innovative two-step processing can provide opportunities for expanded design for using SiC/Si₃N₄/SiC composites being lightweight, inexpensive, homogeneous and isotropic for various high temperature applications.     

Corrosion behavior of porous silicon nitride ceramics in different atmospheres

The corrosion behavior of silicon nitride (Si₃N₄) ceramics with a porosity of 46% at 1200–1500 °C under different conditions including dry O₂, O₂ containing 20 vol% H₂O and Ar containing 20 vol% H₂O is compared. The results show that porous Si₃N₄ ceramics exhibit good oxidation resistance up to 1200 °C. Their corrosion behavior varies depending on the temperature and atmosphere. Water vapor can obviously affect the morphology of the reaction product and thus accelerate the corrosion rate due to its specific inward diffusion mechanism and devitrified effect at high temperature. In view of the reaction kinetics, it proceeds in a diffusion-controlled manner in dry O₂ while follows the parabolic-linear law at water-containing atmosphere. Furthermore, a new model considering both oxidation and volatilization reactions is established. These provide a baseline for expanding the application fields of non-oxide porous ceramics such as Si₃N₄ and silicon carbide (SiC) etc.     

Fabrication of continuously porous SiC–Si3N4 composite using SiC powder by extrusion process

Large amounts of waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of single crystal silicon ingots. Waste SiC sludge was purified by washing it with organic solvent and purified SiC powder was used to fabricate the continuously porous SiC–Si₃N₄ composites, using an extrusion process, in which carbon, 6 wt% Y₂O₃ + 2 wt% Al₂O₃ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives and binder, respectively. In the burning-out process, the binder and carbon were fully removed and continuously porous SiC–Si₃N₄ composites were successfully fabricated. The green bodies containing waste SiC, Si powder and sintering additives were nitrided at 1400 °C in a flowing N₂ + 10% H₂ gas mixture. The continuously porous composites contained SiC, α-Si₃N₄, β-Si₃N₄ and few Fe phases. The pore size of the second passed and third passed SiC–Si₃N₄ composites was 260 μm and 35 μm in diameter, respectively. The values of bending strength and hardness in the second passed and third passed samples were 62.97 MPa, 388 Hv and 77.82 MPa, 423 Hv, respectively.     

Structure–property relations of ferroelectric BaTiO3 ceramics containing nano-sized Si3N4 particulates

Barium titanate/silicon nitride (BaTiO₃/xSi₃N₄) powder (when x = 0, 0.1, 0.5, 1 and 3 wt%) were prepared by solid-state mixed-oxide method and sintered at 1400 °C for 2 h. X-ray diffraction result suggested that tetragonality (c/a) of the BaTiO₃/xSi₃N₄ ceramics increased with increasing content of Si₃N₄. Density and grain size of BaTiO₃/xSi₃N₄ ceramic were found to increase for small addition (i.e. 0.1 and 0.5 wt%) of Si₃N₄ mainly due to the presence of liquid phase during sintering. BaTiO₃ ceramics containing such amount of Si₃N₄ also showed improved dielectric and ferroelectric properties.     

Improved electromagnetic absorbing properties of Si3N4–SiC/SiO2 composite ceramics with multi-shell microstructure

Porous Si₃N₄–SiC composite ceramic was fabricated by infiltrating SiC coating with nano-scale crystals into porous β-Si₃N₄ ceramic via chemical vapor infiltration (CVI). Silica (SiO₂) film was formed on the surface of rod-like Si₃N₄–SiC grains during oxidation at 1100 °C in air. The as-received Si₃N₄–SiC/SiO₂ composite ceramic attains a multi-shell microstructure, and exhibits reduced impedance mismatch, leading to excellent electromagnetic (EM) absorbing properties. The Si₃N₄–SiC/SiO₂ fabricated by oxidation of Si₃N₄–SiC for 10 h in air can achieve a reflection loss of ?30 dB (>99.9% absorption) at 8.7 GHz when the sample thickness is 3.8 mm. When the sample thickness is 3.5 mm, reflection loss of Si₃N₄–SiC/SiO₂ is lower than ?10 dB (>90% absorption) in the frequency range 8.3–12.4 GHz, the effective absorption bandwidth is 4.1 GHz.     

Mechanical properties of Si3N4 ceramics from an in-situ synthesized a-Si3N4/β-Si3N4 composite powder

Sintered Si₃N₄ ceramics were prepared from an ɑ-Si₃N₄/β-Si₃N₄ whiskers composite powder in-situ synthesized via carbothermal reduction at 1400–1550 °C in a nitrogen atmosphere from SiO₂, C, Ni, and NaCl mixture. Reaction temperatures and holding time for the composite powder, and mechanical properties of sintered Si₃N₄ were investigated. In the synthesized composite powder, the in-situ β-Si₃N₄ whiskers displayed an aspect ratio of 20–40 and a diameter of 60–150 nm, which was mainly dependent on the synthesis temperature and holding time. The flexural strength, fracture toughness and hardness of the sintered Si₃N₄ material reached 794±136 MPa, 8.60±1.33 MPa m^1/2 and 19.00±0.87 GPa, respectively. The in-situ synthesized β-Si₃N₄ whiskers played a role in toughening and strengthening by whiskers pulling out and crack deflection.     

Fabrication and contact resistivity of W–Si3N4/TiB2–Si3N4/p–SiGe thermoelectric joints

The design and fabrication of silicon germanium (SiGe) thermoelectric elements, typically including the selection of electrode and intermediate materials, the process of joining electrode and intermediate layer onto thermoelectric materials, are the major challenge for SiGe thermoelectric device technology. In this study, W–Si₃N₄ and TiB₂–Si₃N₄ composites are designed as the electrode and intermediate layer, respectively, and the W–i₃N₄/TiB₂–Si₃N₄/p–Si₈₀Ge₂₀B_0.6 joints are fabricated by a one-step spark plasma sintering process. The influences of the composition of TiB₂–Si₃N₄ intermediate layer on the interfacial structure, contact resistivity and interfacial thermal stability are investigated. The interfacial thermal stability is improved with increasing Si₃N₄ content in TiB₂–Si₃N₄ intermediate layer due to the reduced mismatch of coefficients of thermal expansion between the intermediate layer and SiGe. On the other hand, the contact resistivity increases with the rising of Si₃N₄ content due to the weakened TiB₂/SiGe ohmic contact, which degrades the device efficiency. As the balanced point, the intermediate layer with the composition of 80 vol% TiB₂+20 vol% Si₃N₄ provides good interfacial thermal stability and moderately small contact resistivity (~75 μΩ cm² after aging at 1000 °C for 120 h) simultaneously, which is an optimized intermediate layer composition for W–Si₃N₄/TiB₂–Si₃N₄/p–Si₈₀Ge₂₀B_0.6 thermoelectric element. The TiB₂–Si₃N₄ intermediate layer has excellent chemical stability to both W–Si₃N₄ electrode and SiGe thermoelectric material at high temperatures, which contributes to the sharp interface of the joint and effectively prevents the inter-diffusion between the electrode and the SiGe.