两段式半导体激光器的双稳条件

对Ｋｕｚｎｅｔｓｏｖ采用的速率方程加以修正，考虑了俄歇效应的影响，载流子寿命不再作为常数处理，而写成载流子浓度的函数。由此导出了两段式半导体激光器存在双稳的必要条件，计算结果表明，吸收区偏置电流对双稳条件影响极大，对具体器件而言，若增益区和吸收区隔离电阻不够大，几个ｍＡ的偏置电流泄露到吸收区就使器件难以产生双稳。     

长波长半导体激光器接通时延的解析表达式

在考虑了正比于载流子数密度三次方的俄歇效应后，导出了长波长半导体激光器的接通时延的解析表达式，并对导出的解析式进行了讨论。     

温度和材料参数对InAsxSb1-x俄歇复合寿命影响的数值分析

工作在中长波的红外探测器可被广泛应用在空间成像、军事和通信等领域,锑基InAsSb材料由于其特殊的性质是制作长波非致冷光子探测器的理想材料。俄歇复合寿命是影响探测器性能的重要因素之一,文章采用Matlab软件模拟研究了n型和p型InAsxSb1-x材料的俄歇复合寿命随温度、As组分及载流子浓度的变化。对确定的As组分,可通过优化工作温度及载流子浓度获得较长的俄歇复合寿命。当载流子浓度为3.2×1015 cm-3、温度为200K时,n型InAs0.35Sb0.65的俄歇复合寿命最大为2.91×10-9 s。     

垂直腔半导体光开关中的动态响应时间

从速率方程出发,研究了基于垂直腔结构的光开关(VCS)的动态响应特性.利用平均光子数的方法,在考虑了VCS有源区中增益与载流子浓度的对数关系以及长波长器件的俄歇复合效应后推导出了关于其动态开关延时的解析表达式,并基于该解析式分析了一些参数对VCS动态特性的影响.理论结果与文献报道的结论符合较好.     

InGaAsP/InP DH光源中的俄歇复合载流子受热和载流子漏泄增强

对发光二极管的输出饱和进行仔细分析后就能有根据地认为,俄歇复合是1.3μm InGaAsP/Inp DH光源的输出饱和及激光器阈值的温度敏感性高的主要原因。另外,在最近的实验中观察到大量载流子意外地穿过异质结势垒,像载流子受热一样很可能对器件性能也有影响。本文想统一认识这些现象发生的可能性,认为俄歇复合引起载流子受热,继而载流子泄漏增强。如果采用参考文献1的表示法,那末由俄歇过程引起每单位受热体积的产生率P=E_9An~2,并以速率R向晶格散失。有效能量     

镓铟砷／铝铟砷 QWLD中俄歇复合及其对T0的影响

修正了现行俄歇复合率的公式，并用之分析了晶格匹配ＧａＩｎＡｓ／ＡｌＩｎＡｓ异质材料系统在有无量子尺寸效应情况下的俄歇复合随载流子浓度和温度变化的行为。发现其阈值电流密度随温度的变化行为可分为特征温度不同的相邻两个温区，在较高温区，量子尺寸效应作用不大，在较低温区，量子尺寸效应反而降低了Ｔ０，并对此意外的现象提出初步的解释。     

InGaAsP量子阱激光器结构与阈值电流密度的关系

计入俄歇复合过程的影响,从理论上研究了InGaAsP多量子阱激光器的阈值电流密度。在评述辐射和俄歇过程中考虑了二维载流子在量子化次能带间的所有可能跃迁。俄歇复合电流强烈地依赖于量子阱结构,这样就需要对量子阱激光器的结构进行精心的设计。此外,还阐述了能获得最低阈值电流密度的InGaAsP多量子阱激光器的结构设计程序。     

观测InGaAsP激光器的俄歇复合及载流子泄漏

俄歇复合和载流子泄漏已作为InGaAsP激光器和LED_s的温度灵敏性高和内量子效率低的原因而被提出。本文发表了通过测量载流子寿命和自发辐射率而获得辐射和俄歇复合率以及泄漏电流。发现俄歇复合率和泄漏电流强烈地依赖于掺杂程度。使用的器件是1.3μm InGaAsP双异质结激光器,其氧化物隔离接触条100μm,有源     

InSb光电导太赫兹辐射理论研究

为了研究锑化铟(InSb)半导体材料的光电导太赫兹辐射过程,推导了太赫兹近场辐射公式。在考虑俄歇弛豫机制对光电导过程影响的情况下,分析了InSb光生载流子浓度、载流子散射率以及光电导表面反射率随时间的变化。结果表明,数值模拟与文献中的实验曲线变化趋势一致,计算结果吻合,证明了该研究方法的正确性。     

俄歇复合对同质结InGaAs探测器探测率的影响

通过对InGaAs材料的俄歇(Auger)复合机制的理论分析,给出了少子寿命与材料组分、温度和载流子浓度的关系,从而得到材料参数等对InGaAs探测器的探测率影响的结果,优化材料参数和器件结构可抑制Auger复合机制,提高InGaAs探测器的探测率.     

半导体双稳态激光器在光注入下的实验研究

本文报道了InGaAsP/InP 双区共腔脊形波导双稳激光器在外光注入下产生光-光双稳特性及光-光放大的实验结果,给出了器件在直流及脉冲工作时的光-光双稳特性,并对结果进行了初步分析.     

Optical polarization bistability in TM wave injected semiconductorlasers

Experimental results of optical polarization bistability in InGaAsP lasers are reported and the causes of polarization switching and nonlinear response in this bistability are discussed. The input light signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. It was found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. Calculations using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results indicate that this bistability is a type of dispersive bistability     

Bistability by induced waveguiding in coupled semiconductor lasers

Recently, McInerney, Reekie, and Bradley observed bistability in twin diode GaAs/GaAlAs injection lasers in an external cavity when both diodes were above threshold. We show that this bistability may be explained by a form of self-focusing which is produced by induced waveguiding in the wide stripe lasers. A detailed analysis is performed on a standard model of these diodes in an external cavity. We have found very good agreement between theory and experiment.     

InP基低阈值单向双稳态工作微环激光器的设计与制备

由于半导体微环激光器(SML)具有波长转换、可调谐和光学双稳态等特点,因此成为全光逻辑和全光存储领域的研究热点。在分析背散射耦合系数与SML工作区域(双向连续波、双向交替振荡和单向双稳态)的基础上,优化设计了环形谐振腔的结构参数和工艺流程,研制出一种低阈值、直接进入单向双稳态工作的InP基微环激光器。测试结果表明,激光器的中心激射波长为1569.65 nm,阈值电流为56 mA,当驱动电流超过阈值电流后,器件可不经过双向工作区直接进入单向双稳态,降低了双稳态工作的电流和功耗,非常适合用作光随机存储器单元。     

Polarization optical bistability induced by TM mode injection to aDFB laser with complex coupled coefficient

A novel method is proposed to produce an optical bistability by using a dynamically stable complex coupled DFB (CC-DFB) laser with TM mode injection. In this paper polarization optical bistabilities are analyzed in detail using coupled mode equations and rate equations for the CC-DFB lasers considering the longitudinal hole burning and carrier dependent complex coupling coefficients. Several parameters reflecting the physical features of a complex coupled DFB laser are discussed. It is shown that for a CC-DFB laser the polarization bistability induced by the TM mode injection is much stronger for the antiphase of complex coupling than that for the in-phase. In addition, the influences of initial coupling condition for gain grating structure on the optical bistability are also investigated considering both cases of the antiphase and in-phase     

Observation of switching related to bistability between twocross-coupled lateral modes in twin-stripe lasers

Switching between two cross-coupled lateral modes in gain-guided twin-stripe lasers has been experimentally observed with current injection of nominally identical pulses, which strongly indicates bistability. Near- and far-field patterns at both facets are presented, which clearly shows a skewed light field which couples from under one stripe to under the other. Cross-coupled mode operation was obtained only for relatively long cavity lasers, which is consistent with the theory for twin-stripe lasers with high interstripe gain     

Optical bistability in semiconductor lasers under intermodal lightinjection

Optical bistability in semiconductor lasers under intermodal light injection is predicted using small-signal analysis. The optical bistability is a special case of sidemode injection locking and originates from the strong gain nonlinearity introduced by external light injection. The theory can be applied to the optical bistability under both intramodal and intermodal light injection. And the difference of the optical bistabilities between intermodal and intramodal light injection is discussed. Expression for the bistable loop width is presented. Optical frequency-bistability and power-bistability in semiconductor lasers can be realized by intermodal light injection, which imply that a small (a few GHz) change of the injected light frequency or a small (several μW) change of the injected light power will induce a large (up to THz) change of the laser emitting frequency. Besides, hybrid optical bistability can be achieved by varying the bias current (only a few mA) of the laser. Dynamic properties, such as turn-on and turn-off delay and carrier overshoot during switching are discussed and some consideration of the practical aspects of the optical switching is presented     

Perturbation analysis of bistability and period doublingbifurcations in directly-modulated laser diodes

Resonance frequency shift, bistability, and period doubling bifurcations in directly modulated semiconductor lasers are accounted for by applying multiple scale expansions to the rate equations that take into account spontaneous emission and gain saturation. Explicit algebraic expressions of parameter ranges for resonance frequency shift, bistability, and period 2 and period 4 oscillations are derived, and they are compared with results of numerical calculations. Physical mechanisms of resonance frequency shift and period doubling bifurcations are also explained