共查询到20条相似文献,搜索用时 156 毫秒
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各种氧化铝输送系统 控制概述 在电解铝厂生产过程中,氧化铝物料输送是一个极为重要的环节。尤其目前趋向于大型预焙槽发展,随着生产规模的不断扩大,氧化铝的物料输送技术及环节控制将直接影晌铝电解生产的稳定和氧化铝单耗。因此,控制系统的稳定可靠也显得更为重要。 目前氧化铝物料输送技术主要有稀相输送、浓相输送和超浓相输送三大技术类型。 稀相输送是氧化铝原料输送的传统方法,是采用仓式泵或罐车直接从贮仓将氧化铝物料送到净化系统的高位仓内。其在水平输送管内物料呈疏密不均的流动状态,易形成停滞流,水平管越长,这一 相似文献
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氧化铝超浓相输送技术 总被引:6,自引:0,他引:6
详细介绍了氧化铝超浓相输送技术的原理及在我国应用的前景,分析了此项技术与空气斜槽输送技术的区别,同时提出了采用此项技术或相关技术改造现有铝厂的氧化铝输送配置方案。 相似文献
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介绍了氧化铝浓相输送技术的特点 ,以及中小铝厂纵向配置预焙槽的槽上供料技术和控制方法。与大型铝厂横向配置预焙槽进行了对比 ,提出了浓相输送技术是氧化铝输送及电解槽供料的最佳方案之一 相似文献
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关于电解铝厂应用浓相输送技术的研讨 总被引:3,自引:0,他引:3
叙述了近年来我国大型铝厂从瑞士ALESA公司引进先进的浓相输送技术的机理、特点。并对ALESA技术进行了剖析,以国内大型铝厂氧化铝等粉状物料浓相输送设计为实例,对其工艺及主要设备作了详尽的介绍,认为采用浓相输送是我国今后铝厂氧化铝输送及向电解槽供料的最佳方案之一。 相似文献
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随着铝合金在现代制造业中的应用越来越广泛,铝焊接烟尘及其危害逐渐引起了人们的关注.介绍了铝焊接烟尘的产生机理、主要排放物、影响因素及其规律、扩散规律等特性,分析了铝及其焊接烟尘对人体的危害,并提出一些降低铝焊接烟尘排放量、加强人体防护的措施. 相似文献
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废铝在回收熔炼过程中,产生大量烟尘,其成分复杂,处理难度大。了解烟尘的特点,合理选择收尘设备及处理工艺,掌握好几个重要环节,才能使系统安全有效地运行。介绍了废铝熔炼过程的烟尘特点、烟尘排放标准、烟尘处理技术。 相似文献
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电解铝行业是高能耗高污染的行业,提高电解烟气中HF的净化效率成为减少目前电解铝工艺环境污染的关键。本文通过对国内外部分电解烟气净化系统的工艺对比分析,提出一些关于净化系统的观点。以共同探讨提高铝电解烟气净化泉统净化效率的方法。 相似文献
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This paper describes some oxidation studies of evaporated aluminum films. Resistance marker measurements were carried out between 230 and 400° C and it was concluded that the oxide grows by metal transport. From the sign of its Seebeck coefficient, the oxide was deduced to ben-type. The effect of applying an electric field across the growing oxide layer on aluminum was also investigated. A porous platinum layer evaporated onto the oxide surface was used as one electrode, the underlying metal being the other electrode. At all temperatures between 50 and 400° C the same field effect was observed. When the oxygen-oxide interface was biased negative with respect to the aluminum, an enhancement of the oxidation rate was achieved. These results have been interpreted in terms of the Mott-Cabrera theory. 相似文献
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电解铝行业是高能耗高污染的行业,提高电解烟气的集气效率和净化效率成为减少目前电解铝行业环境污染的关键。本文就电解铝厂电解烟气净化系统集气效率和净化效率的问题,结合实际运行情况,提出一些关于净化系统的观点,以共同探讨提高铝电解烟气净化系统集气效率和净化效率的方法。 相似文献
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《Acta Materialia》2000,48(17):4225-4233
In this paper the method of laser melt injection of SiC particles into an aluminum substrate is investigated both experimentally and theoretically. An extremely small operational parameter window was found for successful injection processing. It is shown that the final injection depth of the particles is controlled mainly by the temperature of the melt pool rather than by the particle velocity. A theoretical model that takes into account the wetting behavior and the particle penetration processes is developed on the basis of the observed particle velocity, thickness and area fraction of oxide skin that partially covers the surface of the heated aluminum melt pool. The model reveals the role of the oxide skin: it is relatively strong at low temperature and acts as a severe barrier for the injection process. It was found that preheating the aluminum substrate results in a higher temperature of the melt pool and partial dissolution of the oxide skin, through which the injected particles are able to penetrate. 相似文献
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火电厂排放的SO2严重地危害着人类的生存环境,为此,国家重新修订了《火电厂大气污染物排放标准》,强制要求对火电厂排放的烟气,要安装烟气脱硫装置来进行控制。笔者以氧化铝厂配套建设的热电厂锅炉烟气治理为例,分析、比较了几种治理措施的特点,提出了适合的烟气脱硫方法。 相似文献
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Carrier transport and charge injection are studied in metal-semiconductor structures employing metal-free tetraphenylporphyrin (H2-TPP) as the organic semiconductor. H2-TPP is deposited on an indium tin oxide (ITO) substrate by means of an apparatus for molecular beam depositions, and aluminum is employed as the top electrode. The ITO/H2-TPP/Al structures thus obtained are investigated by a large-signal capacitance-voltage method, and transport and charge injection are simultaneously measured. At low electrical fields a space-charge limited transport is found, and the device behavior is symmetrical, notwithstanding the different energy barriers at the ITO and Al electrodes. At higher electrical fields the transport regime becomes Schottky-barrier limited, with the asymmetry expected from the energy difference between the two contact metals. The charge injected into the device behaves symmetrically at low fields, and shows a peak at the transition voltages between the space-charge and the Schottky regime, both in the positive and negative bias direction. 相似文献