GB／T 22032-2008《系统工程系统生存周期过程》概要

本标准等同采用国际标准ISO/IEC 15288:2002<系统工程系统生存周期过程>. 本标准的附录A是规范性附录,附录B、C、D是资料性附录.     

SJ／T 11380—2008《自动声纹识别（说话人识别）技术规范》概述

本标准的某些内容有可能涉及专利,本标准的发布机构不应承担识别这些专利的责任. 本标准的附录A是规范性附录.     

欧共体理事会关于医疗器械的指令93/42/EEC(续三)

附录ⅡEC合格声明(全面质量保证体系) 1.制造商必须确保对于有关产品的设计、制造和最终检查按照附录第3条规定的经过批准的质量体系,并受附录第3条第3款和第4条规定的质量审核和第5条规定的共同体监督的制约.     

欧洲议会和理事会指令98/37/EC(续)——各成员国有关机械设备的协调法律

附录Ⅰ 有关设计和制造机械设备与安全性零件的健康与安全基本要求 在本附录中，“机械设备”系指第1(2)条定义的“机械设备”或“安全性零件”。……     

附录

请访问http://www.microsoft.com/sir并下载英文版的安全研究报告以查看以下材料:附录A:威胁命名约定附录B:数据源附录C:全球感染率术语表本报告中引用的威胁系列     

性能规范圆形插头和插座式多路可拆卸端子光纤连接器总规范（续）

A．1范围 A．1．1 范围 本附录列出连接器接口尺寸，它是本规范的强制性部分。本附录包含的资料应一致。     

SJ/T 11365-2006《电子信息产品中有毒有害物质的检测方法》

本标准参考了IEC 111/54/CDV《电子电器产品中六种限用物质铅、汞、镉、六价铬、多溴联苯和多溴二苯醚的检测方法》,附录A为规范性附录.……     

Bay Stack 350 10/100/1000系列交换机(12)

附录Ｃ至特性的快速步骤本附录提供使用ＢａｙＳｔａｃｋ 35 0交换机特性的快速步骤。它提供给熟悉描述在本手册中的特性的系统管理人员。如果你在配置ＢａｙＳｔａｃｋ 35 0交换机特性方面有经验 (比如象ＶＬＡＮＳ、多链路干线、端口反射、ＩＧＭＰＳｎｏｏｐｉｎｇ等等 ) ,你可以使用本附录中提供的配置流程 ,引导你容易地通过步骤去配置交换机。关于配置指定的特性 ,需要时参考提供在流程步骤内的附加信息。本附录为下列特性提供快速步骤流程 :·80 2 .1ＱＶＬＡＮＳ·多链路干线·端口反射·ＩＧＭＰＳｎｏｏｐｉｎｇ要学习关于 :参考…     

欧共体理事会关于医疗器械的指令（续三）

制造商必须确保对于有关产品的设计、制造和最终检查按照附录第3条规定的经过批准的质量体系，并受附录第3条第3款和第4条规定的质量审核和第5条规定的共同体监督的制约。     

数字调制信号的电缆分配系统接口（3）（IEC60728—9）

附录A 同步串行接口(SSI) 本附录描述的串行系统是将不同数据速率的信号进行传输编码后以一个与数据速率相等的传输速率进行传输.它基于对MPEG-2传输包的分层结构,具有一个顶层(2层)和两个底层(0层和1层),底层涉及物理及编码信息.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.     

A 1 cm/spl times/1 cm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 1 cm/spl times/1 cm array of 100 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.