塑料基底a-Si∶H TFT制备技术

采用PECVD工艺,在300℃下在50μm厚的Kapton E高分子塑料片上制备了底栅结构a-Si∶H TFT阵列(20×20)。用傅里叶变换红外光谱仪表征了a-Si∶H薄膜的结构,用二探针法和四探针法分别表征了a-Si∶H薄膜和n+a-Si∶H薄膜的电导率。a-Si∶H薄膜中的H(原子数分数)约为15.6%,H主要以Si H和Si H2基团的形式存在,其电导率为8.2×10-7~8.8×10-6S/cm;n+a-Si∶H薄膜的电导率为3.8×10-3S/cm。所制备的TFT具有以下性能:Ioff≈1×10-14A,Ion≈1×10-9A,Ion/Ioff≈105,Vth≈5V,μ≈0.113cm2/(V.s),S≈2.5V/dec,满足TFT-LCD等平板显示器件的开关寻址电路要求。     

非晶硅和微晶硅的生长机理与结构模型研究

我们利用扫描电子显微镜(SEM)和透射电子显微镜(TEM)对a-Si,a-Si∶H,a-Si∶Cl和μc-Si薄膜进行了观测。文中讨论了a-Si(或a-Si∶H,a-Si∶Cl)和μc-Si薄膜的生长机理;提出了可能的结构模型,即a-Si(或a-Si∶H,a-Si∶Cl)薄膜具有卵石状结构或柱状结构,μc-Si薄膜具有锥状结构。     

场增强α—Si：H光电发射体实验研究

设计了场增强a-Si:H光电发射体,其结构是S_nO_2—n-p a-Si:H—Al:C_s:O,它具有夹心结构和低功函数表面,并因电荷放大效应而提高了光电产额。初步实验表明,在0.56μm波长,量子效串为2.1％,长波限在0.82μm。文中讨论了实验中存在的问题和提高量子效率的方法。     

等离子体氧化nc-Si/SiO_2多层膜的蓝光发射

报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析     

夹心式a—Si：H光阴极

为了提高a-Si:H光电发射的量子效率，设计了夹心式场增强结构。此结构是SnO2-n-pa-Si:H-AI:Cs:O，并在光阴极动态试验系统上进行了初步实验研究，它的光谱响应复盖整个可见光区，长玻限在0.82um，知值波长0.56um。光电发射灵敏度与所加偏压有关，在15V偏压下，积分灵敏度为30um/Lm，峰值量子效率为2.1%。     

a-Si:H/a-C:H超晶格的界面研究

利用透射电子显微镜(TEM)和电子自旋共振(ESR)分别对a-Si∶H/a-C∶H超晶格的界面结构和自旋电子态进行了研究,发现a-Si∶H/a-C∶H界面存在6-15A的过渡层,而且在界面上还存在面密度约10~(12)cm~(2)的未配对电子,这些未配对电子被证实是非晶硅和非晶碳在界面失配产生的.     

a-Si:H中磷掺杂机理的探讨

<正> 在用磷掺杂a-Si∶H时,我们发现随掺杂量的增加,a-Si(P)∶H的直流暗电导σ_D先是增大,在 P/Si=10~(-3)时达最大值,为 10~(-2)(Ω-cm)~(-1)左右.继续的掺杂反而使σ_D下降.相应地,激活能 E_a先是减小,在P/Si(?)10~(-3)时呈最小,约 0.2eV,然后复而增大,如图1所示.这与单晶硅不一样的现象——磷在轻掺杂时有明显的掺杂作用而在“重掺杂”时失却掺杂作用——引起我们探讨非晶硅掺杂机制的兴趣. 为此,用辉光放电法在高纯单晶硅片上制备一系列掺杂程度不一的a-Si 样品,测红外吸收谱,看其随掺杂程度的变动.在此须提及,虽同是辉光放电法,但我们没有用Dundee大学的pH_3为掺杂剂的方法.我们建立一种新的掺杂方法,即利用升华或汽化     

非晶硅Pin二极管的1MeV电子幅照效应

本文报道a-Si∶H本征膜及Pin二极管的1MeV1.4×10¹⁵,4.2×10¹⁵,8.4×10¹⁵/cm²电子幅照实验结果和退火行为.测量了电子辐照对a-Si∶H光暗电导率和光致发光谱的影响,以及a-Si∶H Pin二极管光伏特性和光谱响应随电子辐照剂量的变化.发现电子辐照在a-Si∶H本征膜和二极管中引起严重的损伤,和二极管光谱响应的峰值"红移".但未见饱和现象,还观测到明显的室温恢复现象;但高温退火处理后未能完全恢复.本文对以上实验结果给出了合理的解释.     

a-Si∶H/SiO2多层膜晶化过程中的发光机理

采用在等离子体增强化学气相沉积（PECVD）系统中淀积a-Si∶H薄膜结合原位等离子体氧化的技术，制备了一系列不同a-Si∶H子层厚度的a-Si∶H/SiO2多层膜. 通过对其进行三步热处理：脱氢、快速热退火及准静态退火,使a-Si∶H/SiO2多层膜中a-Si∶H层发生非晶态到晶态的相变，获得尺寸可控的纳米硅nc-Si/SiO2多层膜. 结合Raman谱，FTIR谱和TEM测试，对退火过程中多层膜的光致发光性质进行跟踪研究，分析了a-Si∶H/SiO2多层膜在各个热处理阶段发光机理的演变，讨论了a-Si∶H/SiO2多层膜晶化为nc-Si/SiO2多层膜过程中，发光机制与微结构之间的相互联系.     

a-Si/poly-Si叠层太阳能电池的空间电荷效应和稳定性分析

基于pin结构的a-Si∶H太阳能电池中的空间电荷效应,讨论了a-Si/poly-Si叠层太阳能电池的稳定性.结果表明,在光照射下,光生空穴俘获造成了a-Si∶H中正空间电荷密度的增加,从而改变了电池内部的电场分布,提高了a-Si∶H薄膜中的电场强度.空间电荷效应不会给a-Si/poly-Si叠层结构中的a-Si∶H薄膜带来准中性区(低场"死层"),也没有发生a-Si/poly-Si叠层太阳能电池的光诱导性能衰退,因而a-Si/poly-Si叠层结构太阳能电池具有较高的稳定性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.