基于Pcap01的MEMS电容压力传感器测量电路设计

基于TDC原理文中提出了一种用于MEMS电容式压力传感器的微弱电容测量电路。该电路以微处理器STM32F103为控制核心,通过SPI总线对Pcap01芯片进行时序控制,完成电容数据的采集、分析、处理和显示。该电路具有体积小、抗干扰性强、分辨率高和刷新频率高的特点。通过对10 pF以下的固定电容和MEMS电容式压力传感器测量验证新电路的性能。实验结果表明,电路在10 Hz刷新频率下有效精度位为16位,分辨率可达61 aF。     

电容式MEMS压力传感器的优化设计

由于MEMS压力传感器的制作过程中存在着许多不可控因素，例如，制备环境、工艺误差、设备误差等，因此，整个MEMS压力传感器的稳健优化设计是极其重要的。本文对电容式MEMS压力传感器进行优化设计，以期为后续研究开发电容式MEMS压力传感器奠定必要的基础依据。     

基于MEMS的电容式传感器信号调理电路设计

为了提高（Micro-electro-mechanical Systems,MEMS）微机电系统电容式传感器测量低电容的灵敏度,提出了一种MEMS电容式传感器调理电路,并采用绝缘硅片（SOI）MEMS电容式加速度传感器组成了完整的电容测量系统。该信号调理电路采用了一组片上电容阵列用以抵消电容结构的失配。并且采用可调的方形波发生器来调谐系统的灵敏性,以此弥补电子装置制成后产生的变化。电路采是0.18-μm CMOS 技术设计并制成,测量结果显示,提出的测量系统能够准确测量到MEMS传感器的电容变化以及加速度,证明了信号调理电路的正确性和精确性。     

MEMS高温电容式压力传感器的研制与测试

介绍了一种用硅-硅键合MEMS技术制作的高温电容式压力传感器,并给出了详细的制作工艺.文中对测试装置、测试电路进行了介绍和深入分析,最后用此测试电路对制作的传感器器件进行了高温测试,测试结果表明这种微传感器可在低于350℃的条件下正常工作,且具有很大的线性工作范围、良好的稳定性和较高的灵敏度,其应用前景十分广阔.     

MEMS高精度电容读出电路的单芯片集成研究

MEMS电容式传感器的迅速发展为后续集成化读出电路的设计提出了巨大挑战.系统地分析了制约微传感器高精度电容读出电路设计的主要因素,回顾了目前主要的几种读出电路结构,阐述了这些电路的基本原理,并对影响电路分辨率的主要设计参数进行了分析和对比,最后探讨了电容式读出电路设计的发展趋势.     

电容式压力微传感器的研制

介绍了一种经特殊工艺处理的电容式压力微传感器,分析和论证了其结构设计、工作原理和测量电路。     

热对流式双轴加速度传感器及其在消费类电子产品中的应用

以半导体技术和微机电加工工艺设计、制造的MEMS传感器,因其集成度高,并可与信号处理电路集成在一起,从而大大降低了生产成本,已经在汽车、消费和通信电子领域得到了广泛的应用。MEMS硅悬臂木梁加速度传感器、电容式加速度传感器已经应用得很普遍了。一种采用全新构造,并具有数     

电容式加速度计单芯片开环检测电路的研制

针对MEMS电容式加速度传感器,成功地研制出了一种单芯片集成检测电路。与国内常用的闭环结构不同,本电路采用的是开环检测电路。当电源电压为5V时,测得系统功耗为9 mW,灵敏度为15.8mV/g,线性误差为1.8%,噪声电压的峰峰值小于200μV(12.6 mg),测量范围为+/-100g。     

加速度传感器信号处理集成电路的研制

设计并制作了一种用于差分电容式加速度传感器的信号处理电路。该电路具有模拟和脉宽调制两种输出方式，能够将差分电容的变化通过模拟电平和输出脉冲信号的占空比表征，实现了对差分电容式加速度传感器信号的测量。电路中集成了自检测驱动单元。电路采用4μmP阱CMOS工艺制作。初步测试结果表明：在1～5pF内，电路的灵敏度为10．7V／pF，可满足大多数差分电容式传感器信号处理的要求。     

单光纤传输光推动便携式压力测量仪的研究

介绍了用单根光纤传输测量信号和功率信号的光功率推动液体压力测量仪及其工作原理。该仪器以电容式压力传感器的δ元件作为压力检测元件，采用低功耗前置器电路和简单直杆结构，实现了便携式测量。测量范围为O～100kPa，精度为O．01kPa。     

Comparison of RSG-MOSFET and capacitive MEMS resonator detection

A simulation comparison of MOSFET and double-metal-plate capacitive techniques for vibration detection of MEMS resonator and sensor applications is reported. A novel resonant suspended-gate MOSFET (RSG-MOSFET) analytical model is developed and used for simulating the mechanical and electrical behaviour of the resonant device under electrostatic actuation. It is demonstrated that a MOS-based detection offers signal amplification advantages over conventional capacitive detection especially for narrow beam resonators.     

探空集成传感器设计

微型化、集成化可以使得传感系统减少体积、重量 ,降低成本 ,提高系统的可靠性 ,具有重要的科学意义。本文设计了一个用于测量大气湿度、温度和气压检测微型集成传感器。考虑到MEMS加工工艺兼容性 ,分别采用空气导热检测法、铂电阻法和电容法对湿度、温度、压力进行检测 ,并且进行了理论计算 ,设计了加工工艺步骤 ,制作出雏形器件     

一种基于GaAs MMIC技术的X波段电容式膜桥MEMS微波功率传感器

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

A telemetric pressure sensor system for biomedical applications

A new implantable pressure sensor for long-term monitoring of intracranial pressure is presented. The sensor is powered by telemetry and can be interrogated wirelessly. A capacitive pressure transducer, whose capacitance is converted to a frequency-encoded signal by an application-specific integrated circuit (ASIC), senses the absolute pressure. The pressure-encoded signal, the ASIC input voltage, and onboard calibration parameters are transmitted to an external reading unit. The proposed novel packaging solution is designed for long-term stability and reliability of the sensor. The accuracy of sensor at body temperature is better than 2 mbar across a pressure range of 600-1200 mbar. The sensor is 13 mm in diameter and 4.5 mm in height.     

低功耗电阻型MEMS半导体气体传感器研究进展北大核心

电阻型MEMS半导体气体传感器在环境空气质量监测和有毒有害气体检测等领域得到了广泛应用，但是受限于功耗较高的原因，这类传感器难以广泛应用于便携式气体检测系统。文章综述了近年来低功耗电阻型MEMS半导体气体传感器的研究进展，分别从气敏材料、传感器结构和传感器模组的集成电路等方面探讨如何实现低功耗的电阻型MEMS半导体气体传感器的制备，并展望低功耗的电阻型MEMS半导体气体传感器未来的发展方向。     

Microwave frequency detector at X-band using GaAs MMIC technology

The design,fabrication,and experimental results of an MEMS microwave frequency detector are presented for the first time.The structure consists of a microwave power divider,two CPW transmission lines,a microwave power combiner,an MEMS capacitive power sensor and a thermopile.The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully.The MEMS capacitive power sensor is used for detecting the high power signal,while the thermopile is used for detecting the low power signal.Signals of 17 and 10 dBm are measured over the X-band.The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor,and 6.67 MHz//μV under 10 dBm by the thermopile.respectively.The validity of the presented design has been confirmed by the experiment.     

一种湿度检测电路的设计

湿度是工农业生产和人民日常生活非常重要的环境因素,为了达到稳定、高亮度和快速的显示,采用电容式湿度传感器和单片机结合的方法设计了湿度检测电路,给出了传感器、单片机、A/D转换、显示等元器件和单元电路选择和设计的依据。检测时,湿度传感器HM1500感受湿度变换成电信号送ADC0809转换后经单片机C51处理,由MAX7219控制显示。检测电路具有原理清楚、结构简单、灵敏度高、稳定性好以及高亮度数码显示等特点。     

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below-14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.