Fabrication and characterization of tetrapod-like ZnO nanostructures prepared by catalyst-free thermal evaporation

Tetrapod-like ZnO nanostructures were fabricated on ZnO-coated sapphire (001) substrates by two steps: pulsed laser deposition (PLD) and catalyst-free thermal evaporation process. First, the ZnO films were pre-deposited on sapphire (001) substrates by PLD. Then the ZnO nanostructures grew on ZnO-coated sapphire (001) substrate by the simple thermal evaporation of the metallic zinc powder at 900 °C in the air without any catalysts. The pre-deposited ZnO films by PLD on the substrates can provide growing sites for the ZnO nanostructures. The as-synthesized ZnO nanostructures were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrum (FTIR). The results show that the tetrapod-like ZnO nanostructures are highly crystalline with the wurtzite hexagonal structure. Photoluminescence (PL) spectrum of as-synthesized nanostructures exhibits a UV emission peak at ～ 389 nm and a broad green emission peak at ～ 513 nm. In addition, the growth mechanism of ZnO nanostructures is also briefly discussed.     

Anionic surfactant-assisted hydrothermal synthesis of high-aspect-ratio ZnO nanowires and their photoluminescence property

ZnO nanowires with high-aspect-ratio of up to ca. 600 were synthesized in a quaternary reverse microemulsion containing sodium dodecyl sulfate (SDS) / water / heptane / n-hexane via a hydrothermal method. SDS, as an anionic surfactant, plays an important role in the formation of morphologies. Subsequently, we studied lots of key influencing factors including the molar ratio (w) value of NaOH to Zn(OAc)₂, the reaction temperature, and the instance without the quaternary reverse microemulsion. The selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM) reveal the single-crystal nature of the ZnO nanowires. The morphologies and crystalline structure of the as-obtained products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and powder X-ray diffraction (XRD), respectively. Through this route, we can obtain a mass of products and the method is both convenient and reproducible. Finally, we measured the photoluminescence (PL) spectra and found that the ZnO nanowires exhibited green-orange emission at 525 nm and short ultraviolet emission at 380 nm and the ZnO nanomaterials with different aspect ratio (length to diameter) (L / D) showed PL intensity disciplinary change. Aiming at this phenomenon, we propose a reasonable mechanism to explain the PL spectra of the ZnO nanomaterials in detail.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.     

Gallium nitride nanowires doped with magnesium

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga₂O₃ films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.     

A simple route to the synthesis of single crystalline copper metagermanate nanowires

Single crystalline copper metagermanate (CuGeO₃) nanowires with the diameter of 30–300 nm and length of longer than 100 µm have been prepared by a simple hydrothermal deposition route. X-ray diffraction (XRD), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman analyses confirm that the nanowires are orthorhombic single crystals with a main growth direction along <101>. Room temperature photoluminescence (PL) measurement shows a strong blue emission peak at 442 nm with a broad emission band. The blue emission may be ascribed to radiative recombination of oxygen vacancies and oxygen–germanium vacancies. The formation process of CuGeO₃ nanowires is also discussed.     

Single crystalline ZnO nanorods grown by a simple hydrothermal process

Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 µm. Raman peak at 437.8 cm^− 1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.     

Low-temperature synthesis and optical properties of wurtzite ZnS nanowires

Single-crystal wurtzite ZnS nanowires have been synthesized via a facile solution route with polyethylene glycol-400 as inducing template at low temperature (170 °C). The as-prepared products have been characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and energy dispersive X-ray analysis (EDX). Raman and photoluminescence spectrum (PL) were used to investigate the optical properties of ZnS nanowires. The strong emission peak centered at 322 nm in PL spectrum could be attributed to the band to band transitions.     

Study of structural and optical properties of Ge doped ZnO films

The Ge doped ZnO films were deposited on quartz substrates by radio frequency magnetron sputtering. The effects of doping and substrate temperature on the structural and optical properties of the Ge doped ZnO films were investigated by means of X-ray diffraction (XRD), UV-visible transmission spectra, X-ray photoelectron spectroscopy and photoluminescence (PL) spectra. The XRD patterns showed that Zn₂GeO₄ phases were formed in the films. With the increase of substrate temperature the crystallization of Zn₂GeO₄ was improved, and that of ZnO phases turned worse, and no diffraction peak of ZnO was observed when the substrate temperature was 700 °C. Obvious ultraviolet (UV) light emission was found due to ZnO grains, and it was much stronger than that of un-doped ZnO films. The enhancement of UV light emission at about 380 nm may be caused by excitons which were formed at the interface between Zn₂GeO₄ and ZnO grains. In the visible region of the PL spectra, the green light emission peak of samples at about 512 nm was associated with defects in ZnO. A red shift of the green light emission peak was observed which can be explained by the fact that there is a luminescence center at about 548 nm taking the place of the defect emission of ZnO with the increase of substrate temperature. The red shift of the green light emission peak and the 548 nm green light emission peaks of the PL spectrum show that some Ge²⁺ should replace the Zn²⁺ positions during the Zn₂GeO₄ grains growth and form the Ge²⁺ luminescence centers in Zn₂GeO₄ grains.     

Self-catalytic formation and characterization of Zn2SnO4 nanowires

Mass production of transparent semiconducting ternary oxide Zn₂SnO₄ nanowires is successfully synthesized by the thermal evaporation method without any catalyst. The as-synthesized products are characterized with field-emission scanning electron microscope (FE-SEM), X-ray powder diffraction (XRD), energy-dispersive spectroscopy (EDS), high-resolution transmission electron microscope (HR-TEM) and selected area electron diffraction (SEAD). A formation of Zn₂SnO₄ nanowires based on a self-catalytic VLS growth mechanism is discussed. The photoluminescence spectrum (PL) of the nanowires shows a broad blue-green emission around the 300-600 nm wavelengths with a maximum center at 580 nm under room temperature.     

A simple microwave-assisted decomposing route for synthesis of ZnO nanorods in the presence of PEG400

In the paper, a simple microwave-assisted decomposing reaction in the presence of PEG400 has been successfully developed to synthesize ZnO nanorods with 10-25 nm of diameter and 60-200 nm of length. The product was analyzed and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and HRTEM. Ultraviolet-visible (UV-vis) absorption peak of ZnO nanorods shows a distinct blue shift from that of the bulk and the Photoluminescence (PL) spectrum exhibits a strong near-band-edge emission at 385 nm. Further experiments have also been designed, and the results show that microwave radiation and surfactant PEG400 all played an important role on the formation of ZnO nanorods.     

Synthesis and characterization of ZnO nanowires for nanosensor applications

In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 °C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H₂ of a gas nanosensor based on an individual ZnO nanowire is also reported.     

Smooth germanium nanowires prepared by a hydrothermal deposition process

Smooth germanium nanowires were prepared using Ge and GeO₂ as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.     

Water-assisted growth and characterization of SnO2 nanobelts

SnO₂ nanobelts have been synthesized by water-assisted growth at 850 °C using high pure Sn powders as the source materials. The as-synthesized products were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy(TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersed X-ray spectroscopy (EDX), infrared spectrum (IR) and room-temperature photoluminescence (PL) spectrum. XRD pattern of the sample is quite in accord with the standard pattern of the tetragonal rutile SnO₂; SEM and TEM images show that the uniform single-crystalline SnO₂ nanobelts are about tens of micrometers in length, 70-100 nm in width and 5-8 nm in thickness, and is smooth in surface. The special IR and PL properties were also detected by IR and PL testing. The growth mechanisms and special properties relative to the SnO₂ nanostructures are discussed.     

The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method

ZnO nanowire arrays have been grown on the ZnO film-coated silicon (100) substrates by hydrothermal method, and the deposited nanowires are found to have a uniform size distribution with sharp hexagonal-shaped tips. The structural and optical properties of the nanowires were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and cathodoluminescence (CL) techniques. The XRD and SEM results demonstrate that the well-aligned ZnO nanowires are single crystalline structure formed along the c-axis orientation. TEM analysis further confirms that the ZnO nanowires are highly preferred grown along the (002) crystal plane. The spacing between adjacent (002) lattice planes is estimated as 0.52 nm. The optical properties of the nanowires were measured using CL after annealing in oxygen and nitrogen atmospheres at 550 °C for various times. The CL spectra in the visible spectrum exhibit two weak deep-level emission bands that may be attributed to the intrinsic or extrinsic defects. It can be observed that the ZnO nanowires show different optical behaviors after various annealing times. The dependence of the optical properties on the annealing conditions is also discussed.     

Structure and optical spectrum of GaN nanorods produced on Si(111) substrates

A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga₂O₃/Nb films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed.     

Synthesis,growth mechanism,photoluminescence and field emission properties of metal–semiconductor Zn–ZnO core–shell microcactuses

Metal–semiconductor Zn–ZnO core–shell microcactuses have been synthesized on Si substrate by simple thermal evaporation and condensation route using NH₃ as carrier gas at 600 °C under ambient pressure. Microcactuses with average size of 65–75 μm are composed of hollow microspheres with high density single crystalline ZnO rods. The structure, composition and morphology of the product were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). A vapor–liquid–solid (VLS) based growth mechanism was proposed for the formation of Zn–ZnO core–shell microcactuses. Room temperature photoluminescence (PL) investigations revealed a strong and broad blue emission band at 441 nm associated with a weak ultraviolet (UV) peak at 374 nm. This blue emission (BE) is different from usually reported green/yellow-green emission from Zn–ZnO or ZnO structures. The field emission (FE) measurements exhibited moderate values of turn-on and threshold fields compared with reported large field emissions for other materials. These studies indicate the promise of Zn–ZnO core–shell microcactuses for the applications in UV-blue light display and field emission microelectronic devices.     

Solvothermal synthesis of Cr-doped ZnO nanowires with visible light-driven photocatalytic activity

Cr-doped ZnO nanowires were fabricated by a solvothermal route from Zn(NO₃)₂6H₂O, Cr(NO₃)₃9H₂O and NaOH. Inductively coupled plasma optical emission spectroscopy, X-ray diffraction, transmission electron microscopy, and high resolution transmission electron microscopy results confirmed the doping of Cr into ZnO lattices. UV-vis absorption spectra of both pure ZnO and Cr-doped ZnO displayed a band gap absorption peak at about 365 nm. However, compared with pure ZnO, an additional broad tail from approximately 400 nm to 750 nm appeared in the UV-vis absorption spectrum of Cr-doped ZnO. The photocatalytic studies indicated that the as-synthesized Cr-doped ZnO nanowires were a kind of promising photocatalyst in remediation of water polluted by some chemically stable azo dyes under visible light.     

Ultrasound-assisted synthesis of dentritic ZnO nanostructure in ionic liquid

A facile and environment-friendly sonochemical route to fabricate well-defined dentritic ZnO nanostructures in a room-temperature ionic liquid has been reported. The structure and morphology of the synthetic branch-shaped ZnO products were characterized by X-ray diffraction and transmission electron microscopy. The photoluminescence (PL) spectrum of the synthetic dentritic ZnO nanostructures exhibits a strong ultraviolet emission at 378 nm and a weak green emission at 532 nm respectively at room temperature. A plausible formation mechanism of dentritic ZnO nanostructures was discussed in detail.     

Synthesis of AgBr/ZnO nanocomposite with visible light-driven photocatalytic activity

AgBr/ZnO nanocomposite was synthesized via chemical precipitation from pure ZnO nanowires, AgNO₃, and NaBr. Inductively coupled plasma optical emission spectroscopy, X-ray diffraction, and high resolution transmission electron microscopy results confirmed the forming of AgBr/ZnO nanocomposite. High resolution transmission electron microscopy results of the as-synthesized AgBr/ZnO nanocomposite revealed that AgBr nanoparticles were attached to the surface of ZnO nanowires. UV-vis diffuse reflectance spectra of both pure ZnO and AgBr/ZnO nanocomposite displayed a band gap edge at about 350-380 nm. However, compared with pure ZnO, an additional broad tail from approximately 400 nm to 700 nm appeared in the UV-vis diffuse reflectance spectrum of AgBr/ZnO nanocomposite. The photocatalytic studies indicated that the as-synthesized AgBr/ZnO nanocomposite was a kind of promising photocatalyst in remediation of water polluted by some chemically stable azo dyes under visible light.     

Enhanced photoluminescence of CoWO<Subscript>4</Subscript> in CoWO<Subscript>4</Subscript>/PbWO<Subscript>4</Subscript> nanocomposites

CoWO₄/PbWO₄ nanocomposites were successfully synthesized at room temperature (RT) by co-precipitation route without using any templates or surfactants and sintered at 600 °C for good crystallization. The sintered samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy and Zeta potential measurements. UV–Visible diffuse reflectance spectroscopy, photoluminescence (PL) and PL lifetime were studied at RT. The results indicate that the composites have two-phase composition: CoWO₄ and PbWO₄. SEM micrograph and zeta potential measurements reveal particle agglomeration. The intrinsic PL peak emission at 467 nm of CoWO₄ nano sample was enhanced upto four times by optimizing the atomic ratio of Pb/Co concentration. The interconnected interface of CoWO₄/PbWO₄ nanocomposites could have led to increase in number of recombination of electron hole pairs in CoWO₄ and enhanced its intrinsic PL emission intensity. The mechanism of enhanced PL emission for the CoWO₄/PbWO₄ nanocomposites can be attributed to charge transfer between [WO₄]^2? and [WO₆]^6? complexes due to intra particle agglomeration leading to possible interface.