共查询到10条相似文献,搜索用时 148 毫秒
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离子注入技术已超出了半导体工业的范围,成为材料科学中强有力的研究手段,并在材料改性领域中开始了工业应用。有人认为离子束技术是进行“材料设计”的手段,是实现“从天然材料到人造材料时代的关键。稀土元素在冶金中的应用很有前途,加入适量稀土可改善钢的机械性能、加工性能和耐蚀性能。但稀土元素改善钢的耐蚀性的作用和机理都有待深入研究,而用离子注入技术系统研究稀土元素改善钢的耐蚀性的工作尚未见报道。我国稀土资源丰富,系统地研究注入稀土元素的作用有重要意义。为了改善航空发动机轴承的抗局部腐蚀性能,美国海军实验室曾将Cr、Mo等常规耐蚀合金元素注入到轴承钢表层,并取得良好效果。本工作亦显示了注入稀土元素改善轴承钢抗点蚀特性的潜力。 相似文献
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321不锈钢在低酸度硝酸铀酰溶液中的腐蚀特性 总被引:1,自引:0,他引:1
用称量法和电化学法研究了321不锈钢在不同浓度和pH值的硝酸铀酰溶液中的高温均匀腐蚀和电化学府蚀行为。均匀腐蚀试验结果表明.在选定的腐蚀条件下,321不锈钢样品在960h内,其表面光洁度无明显变化.腐蚀速率小于0.04mg/m^2.h,在低酸度的硝酸铀酰溶液中耐蚀。用腐蚀电入学法研究了321不锈钢在有溶解氧的硝酸铀酰溶液中的腐蚀电化学特性,测量了电极的腐蚀电位、腐蚀电流密度。经AES分析表明,电化学腐蚀后的样品在腐蚀膜中有一定量的铀.深度剖析含铀腐蚀膜的厚度为10—15nm。 相似文献
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S. K. Ngoi S. L. Yap B. T. Goh R. Ritikos S. A. Rahman C. S. Wong 《Journal of Fusion Energy》2012,31(1):96-103
A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated
amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated
with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of
dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of
the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering
and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase
in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with
a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation
reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure. 相似文献
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D.M. Folistaedt J.A. Knapp L.E. Pope S.T. Picraux 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》1985,12(3):359-368
The microstructure resulting when Ti and N are both ion-implanted into pure Fe at room temperature has been examined with ion beam analysis, transmission electron microscopy, and electron energy loss spectroscopy. Precipitates of TiN form within the bcc Fe matrix, in contrast to the amorphous phase which forms when Ti and C are both implanted. For comparison, the microstructure resulting when N alone is implanted into Fe was also examined, and Fe2N precipitates were observed within the Fe matrix. The surface mechanical properties of 15?5 PH steel which was implanted with both Ti and N were examined with pin-on-disc testing, and the results were interpreted in terms of the microstructures observed in Fe. The modifications produced by Ti + N implantation are the same as observed with other treatments producing hard nitrides or carbides within the iron-based matrix: reduced wear is observed, but not reduced friction. 相似文献
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动态离子束混合技术制备氧化铬薄膜的X射线光电子能谱与俄歇电子能谱研究 总被引:1,自引:0,他引:1
本文介绍的动态离子束混合技术制备氧化铬薄膜系在不锈钢基体上进行1keV氩离子束溅射沉积铬(同时通入一定量的O),并用100 keV的氩离子束或氧离子束轰击该样品.对两种离子束轰击形成的氧化铬薄膜进行了X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)和俄歇电子能谱(Auger electron spectroscopy,AES)的分析研究.发现Ar 离子束制备的氧化铬薄膜主要是Cr2O3化合物,而O 离子束制备的氧化铬薄膜含有其它价态的铬氧化物.Ar 离子束制备氧化铬薄膜的污染碳少于O 离子束制备.与O 离子束制备相比较,相同能量的Ar 离子束轰击更有利于提高沉积的Cr原子与周围O2的反应性;Ar 离子束制备的氧化铬薄膜过渡层的厚1/3左右,较厚的过渡层显示了制备的薄膜具有较好的附着力. 相似文献
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Sputtering yields for 1 to 20 keV H+, D+, He+, Ne+ and Ar+ ions on 304 stainless steel films have been measured. The films with a thickness of 0.1 to 1 μm were sputter deposited onto polycrystalline Be substrates. Rutherford backscattering of 2 MeV He+ ions was used for in situ measurement of the thickness of the stainless steel film. The sputtering yields were obtained from the slope of the decrease in film thickness with increasing sputtering ion dose. The measured yields agree well with yields obtained by weight loss in this laboratory, they are however lower than those published earlier. 相似文献