Phase Equilibria and Physical Properties of Oxygen-Deficient Zirconia and Thoria

The compositions of anion-deficient zirconia and thoria in equilibrium with O₂ were measured from 1 to 10⁻⁶ atm and 1400° to 1900°C; for ZrO_{2- x} (po₂ in atm, and T in °K), log x∼−0.890-[(0.400×10⁴)/ T ]-[(log p )/6]; for ThO_{2- x} , log x∼−1.870-[(0.340×10⁴)/ T ]-[(log p )/6]. The ZrO_{2- x} -Zr boundary was located at x=0.014 at 1800°C; thoria was single-phase over the entire range. Consistent results were obtained when O₂/inert gas mixtures were used, but use of H₂/H₂O and CO/CO₂ at 1000° to 1200°C gave abnormal and, in the latter case, erratic data; side reactions in these atmospheres are inferred. The monoclinic-tetragonal phase change of ZrO₂ and the lattice thermal expansion, room-temperature Young's modulus, and strength properties of ZrO₂ and ThO₂ bodies were not appreciably altered by oxygen deficiency. The lattice dimensions decreased slightly with departure from stoichiometry.     

Electrical Conduction in Single-Crystal and Polycrystalline Al2O3 at High Temperatures

The electrical conductivity and ion/electron transference numbers in Al₃O₃ were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O₂ partial pressure over single-crystal Al₂O₃ at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O₂ (1 atm) the conductivity above 1400°C was σ≃3×10³ exp (–80 kcal/ RT ) Ω⁻¹ cm⁻¹, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al₂O₃ and MgO-doped Al₂O₃ showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O₂ partial pressure (below 10⁻¹⁰ atm).     

Electrical Conductivity of Uranium Dioxide

The electrical conductivity of nearly stoichiometric single-crystal and polycrystalline uranium dioxide was measured from room temperature to 3000°K. Below approximately 550°K, the curve of log σ versus T ⁻¹ is linear with a calculated activation energy of approximately 0.17 ev. Between 550° and 1250°K, however, the shape of the curve changes; this change varies from one specimen to another. The electrical conductivity increases rapidly with increasing temperature above 1250°K with a change from p -type to n -type conduction. The best linear fit of the log σ versus T ⁻¹ curve above 1400°K is σ= 3.57 × 10³ e ^{−(1.15 ev/KT)}. Above 1900°K, the curve deviates slightly from linearity and is best fit by the equation σ= 2.10 × 10⁻² T ^1.4 e ^{−(0.916 ev/KT)}.     

Effects of Temperature and Strain Rate on the Plastic Deformation of Fully Dense Polycrystalline Y1Ba2Cu3O7−x Superconductor

The knowledge of the steady-state stress for plastic deformation as a function of temperature and strain rate is essential for hot-forming superconducting material into commercially useful shapes. In this paper, results are presented on the experimental determination of the rheology of fully dense polycrystalline Y₁Ba₂Cu₃O_7−x superconducting material at temperatures ranging from 750° to 950°C and strain rates of 10⁻⁴, 10⁻⁵, and 10⁻⁶ s⁻¹. The data are best fitted by a power law: ε(s⁻¹)=8.9 × 10⁻¹⁷. (s⁻¹) σ^2.5 (Pa) exp [−2.01 × 10⁵(J·mol⁻¹)|RT]. X-ray analysis shows that the superconducting material retains its phase composition after nearly 70% total strain of the sample. A strong anisotropy in the resistivity of the deformed samples is observed because of the development of a preferred orientation of the a or b axis of Y₁Ba₂Cu₃O_7−x orthorhombic perovskite single crystals perpendicular to the principal maximum compressive stress.     

Ionic Domain for Y2O3-Doped ThO2 at Low Oxygen Activities

The emf method was used to determine the lower limit of oxygen activity for essentially pure anionic conduction in Th_0.85Y_0.15O_1.925 from 775° to 1000C. The results show that the oxygen transference number is ≥0.99 when log PO ₂≥−6.5(10⁴/ T °K)+29.     

Particle Size Dependence of the Electrical Conductivity of NaCl

The ac and dc conductivities of single-crystal and polycrystalline NaCl were measured as a function of both temperature and particle size. The ac conductivity results for single-crystal NaCl agreed well with the literature: intrinsic activation energy = 1.86 ev; extrinsic, impurity-controlled range = 0.74 ev; extrinsic, association range = 1.16 ev; and the intrinsic-extrinsic knee in the curve was at 10³/ T ∼ 1.4°K⁻¹ and σ₀∼ 6 × 10⁻⁸ ohm⁻¹ cm⁻¹. In the intrinsic range, however, the total conductivity (σ₀) was the sum of two ionic contributions: a steady state, nonblocked contribution (σ_θ and a blocked contribution (σ₀—σ_θ). The activation energy for the dc steady state conductivity was 1.6 ev. When the extrinsic, impurity-controlled contribution to the total conductivity was made insignificant by anion doping, the same 1.6 ev was the activation energy for the intrinsic ac conductivity at low temperatures. The data for the polycrystalline samples showed that ac conductivity increased inversely with particle size and dc steady state conductivity increased only slightly, if any, with decreasing particle size. It is postulated that the steady state conductivity is the result of the nonblocked ionic transport of sodium ions and that the ac portion of the total conductivity is due to the movement of chlorine ions which are blocked, giving rise to the polarization phenomenon. The increase in the ac conductivity with decreasing particle size is correlated with the enhanced movement of Cl⁻ in the subgrain boundary region, as has been previously shown by diffusion measurements.     

Annealing of Irradiation-Induced Thermal Conductivity Changes in ThO2-1.3 wt% UO2

The thermal conductivities of sintered pellets of ThO₂-1.3 wt% U0₂ were measured at 60°C before and after irradiation. The irradiation temperature was below 156°C, and the exposures varied from 3.1 × 10¹⁴ to 4.7 × lo^L7 fissions/cm³. Each fission fragment damaged a region of 2.2 × 10^-16 cm³ with the reduction in conductivity saturating by about 10¹⁷ fissions/cm³. Samples having exposures from 10¹⁵ to 10¹⁶ fissions/cm³ were annealed isothermally at 651 °C or isochronally from 300° to 1200° C to study the annealing of damage. Most of the annealing occurred between 500° and 900°C. The width of this interval plus the slow isothermal annealing suggest that the damage is annealed by a number of single order processes with a spectrum of activation energies from 1.8 to 3.9 eV or, less probably, by a high order process with an activation energy of 3.55 ± 0.4 eV.     

Preparation and Electrical Properties of New Oxide Ion Conductors Ce6−xGdxMoO15−δ (0.0≤x≤1.8)

A series of oxide ion conductors Ce_{6− x} Gd _x MoO_15−δ (0.0≤ x ≤1.8) have been prepared by the sol–gel method. Their properties were characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), Raman, IR, X-ray photoelectron spectroscopy (XPS), and AC impedance spectroscopy. The XRD patterns showed that the materials were single phase with a cubic fluorite structure. The conductivity of Ce_{6− x} Gd _x MoO_15−δ increases as x increases and reaches the maximum at x =0.15. The conductivity of Ce_4.5Gd_1.5MoO_15−δ is σ_t=3.6 × 10⁻³ S/cm at 700°C, which is higher than that of Ce_4.5/6Gd_1.5/6O_2−δ (σ_t=2.6 × 10⁻³ S/cm), and the corresponding activation energy of Ce_4.5Gd_1.5MoO_15−δ (0.92 eV) is lower than that of Ce_4.5/6Gd_1.5/6O_2−δ (1.18 eV).     

Defect Structure of Ta2O5

Electrical conductivity, thermoelectric power, and weight change were measured for polycrystalline Ta₂O₅ from 900° to 1400°C. The predominant ionic and electronic defects in this temperature range are oxygen vacancies and electrons. The oxygen-vacancy and electron mobilities are 8.1 × 10³exp (−1.8 eV/ k T) and ∼0.05 cm²/V-s, respectively. At O₂ partial pressures near 1 atm, the ionic-defect concentration is essentially fixed by the presence of lower-valence cation impurities, and the total electrical conductivity is predominantly ionic, whereas at low P _o2's the conductivity is electronic and proportional to P P _o2^−1/6.     

Strain Effects and Spalling in Alpha-Bombarded ThO2

Samples of bulk polycrystalline ThO₂ were bombarded with 5-MeV α-particles to doses between 9.4×10¹⁶ and 6.0×10¹⁷ ions/cm². The sample which received the highest dose spalled during bombardment; those receiving lower doses either did not spall or did so only after postirradiation annealing. The spalling was investigated by X-ray analysis and replica and transmission electron microscopy. It is concluded that spalling resulted from severe lattice strains at the interface between damaged and undamaged material and that sintering pores played a part in the fracture process. The role of lattice defects in initiating fracture is discussed.     

Characterization of the Thermally Contracting Tungstates Ta22W4O67, Ta2WO8, and Ta16W18O94

An investigation of the properties of high-purity (>99 wt%) tantalum tungstates (Ta₂₂W₄O₆₇, Ta, WO₈, and Ta₁₆W₁₈O₉₄) included determination of density (bulk and theoretical), refined lattice constants, maximum use temperatures, micro-hardness, heat capacity, thermal expansion (contraction) and diffusivity, calculated thermal conductivity, and electrical resistivity. Usable to ∼ 1700 K in air or inert atmospheres, these tantalum tungstates have theoretical densities of 7.3 to 8.5 g/cm³, are relatively soft (120 to 655 kg/mm² hardnesses), and are electrical insulators (6× 10³ to 2× 10⁸Ω^.cm resistivities). The distinguishing properties of the materials are their thermal expansion (average CTE values from + 0.6×10⁻⁸/K to −5.1× 10⁻⁶/K at 293 to 1273 K), thermal expansion hysteresis with minimal observable microcracking, and thermal diffusivity     

Oxygen Sensors Based on the Electrical Conductivity of the Solid Solutions (Mg1–xFex)O and(Mg1–xCox)O

Solid solutions of general compositions (Mg_{1- x}Fe_x)O and (Mg_1-xCo_x)O (0.05 ≤ x ≤ 0.25) were investigated with regard to the dependence of their specific electrical conductivity on the oxygen partial pressure (10⁻¹⁷≤ po₂≤ 10⁵ Pa) at 900^c and 800°C. The experimental results, especially the slopes of plots of log σ vs log po₂ and the stability of the solid solutions studied, indicate that some of these compositions could be used as oxygen sensors at high temperatures.     

Oxygen Potential in the System UMoO6/UMoO5 by the Solid Oxide Electrolyte Emf Method

The emf of the galvanic cell Pt|UMoO₆UMoO₅|ZrO₂-Y₂O₃|O₂(air, Po₂=0.21 atm)|Pt, measured from 776 to 1127 K, was determined to be E = 751.7−0.4909 ±4.3 mV. Using the standard Gibbs energy of formation, ^fΔG°, for UMoO₆ reported in the literature from transpiration studies, the ^fΔG° for UMoO₅ is calculated to be ^fΔG°〈UMoO₅〉=−1816.9+0.3748T±6.0 U-mol⁻¹ The magnitudes of the standard entropies of formation, ^fΔS°, for UMoO₆ and UMoO₅ were evaluated from those values reported for the binary oxides which constitute the ternary compounds.     

Anisotropic Thermal Expansion of β-Ca2SiO4 Monoclinic Crystal

Crystals of β-Ca₂SiO₄ (space group P 12₁/ n 1) were examined by high-temperature powder X-ray diffractometry to determine the change in unit-cell dimensions with temperature up to 645°C. The temperature dependence of the principal expansion coefficients (α_i) found from the matrix algebra analysis was as follows: α₁= 20.492 × 10⁻⁶+ 16.490 × 10⁻⁹ ( T - 25)°C⁻¹, α₂= 7.494 × 10⁻⁶+ 5.168 × 10⁻⁹( T - 25)°C⁻¹, α₃=−0.842 × 10⁻⁶− 1.497 × 10⁻⁹( T - 25)°C⁻¹. The expansion coefficient α₁, nearly along [302] was approximately 3 times α₂ along the b -axis. Very small contraction (α₃) occurred nearly along [     01]. The volume changes upon martensitic transformations of β↔α_L' were very small, and the strain accommodation would be almost complete. This is consistent with the thermoelasticity.     

Characterization of a Large-Scale Nondoped YBa2Cu3O7−x Superconductor Prepared by Plastic Forming Without High-Pressure Molding

A slurry containing YBa₂Cu₃O_{7− x} particles and a fine YBa₂Cu₃(OH) _x colloid solution was prepared, and a large-scale bulk YBa₂Cu₃O_{7− x} superconductor (about 50 mm × 35 mm × 2 mm) was produced by plastic forming without high-pressure molding. The samples molded from the slurry were dried and then fired at 1223 K in air. X-ray diffraction data indicated that the samples had the characteristic orthorhombic YBa₂Cu₃O_{7− x} structure. Measurements of electrical resistance were carried out between 300 and 50 K by the standard four-probe DC electrical measurement. The samples began superconducting at an onset temperature around 92 K, and the full-transition temperature (critical temperature) ( T _c) was 88.7±1.4 K. The critical current density ( J _c) measured at 77 K was about 440 A/cm², the value of J _c was improved by the heat treatment under an oxygen atmosphere, and J _c=1.6 × 10³ A/cm² was observed. Under the magnetic field (B=1 T), the sample held its superconductivity, and demonstrated that this method can be used to produce the magnetic shielding used in magnetic resonance imaging diagnosis.     

Effect of Water Vapor on Dielectric Loss in MgO

A dielectric loss study of porous MgO indicates that H₂O absorption on MgO probably leads to the formation of surface defects as well as hydroxide ions. The ac conductivity, σ_ac followed the equation σ_ac=σ₁ + KP _H2O^0.27 from 550° to 800°C when the water partial pressure was varied between 7 × 10⁻⁵ and 3 × 10⁻² atm.     

Porous Glass-Ceramics with a Skeleton of the Fast-Lithium-Conducting Crystal Li1+xTi2−xAlx(PO4)3

Porous glass-ceramics with a skeleton of the fast-lithium-conducting crystal Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ (where x = 0.3–0.5) were prepared by crystallization of glasses in the Li₂O─CaO─TiO₂─Al₂O₃–P₂O₅ system and subsequent acid leaching of the resulting dense glass-ceramics composed of the interlocking of Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ and β-Ca₃(PO₄)₂ phases. The median pore diameter and surface area of the resulting porous Li_{1+ x} Ti_{2− x} Al _x (PO₄)₃ glass-ceramics were approximately 0.2 μm and 50 m²/g, respectively. The electrical conductivity of the porous glass-ceramics after heating in LiNO₃ aqueous solution was 8 × 10⁻⁵ S/cm at 300 K or 2 × 10⁻² S/cm at 600 K.     

Phase Diagram of a Nickel-Zinc Ferrite of Composition Ni0.685Zn0.177Fe2.138O4+γ

The oxygen content of Ni_0.685Zn_0.177Fe_2.138O_4+γ was determined gravimetrically at atmospheric pressure in varying Po₂ , 3.5 × 10⁻⁴ to 1.0 atm at 600° to 1450°C. The phase boundary associated with the precipitation of α-Fe₂O₃ was determined from the change in slope of γ vs T plots observed on heating. Metastability is particularly evident for curves observed on cooling. Isacompositional lines (0.002 < γ < 0.045) are shown on a plot of log PO₂ vs 1/T. An enthalpy of -21.6 kcal/mol is calculated for the oxidation of Fe²⁺.     

Enhancement of Giant Dielectric Response in CaCu3Ti4O12 Ceramics by Zn Substitution

Zn-substituted CaCu₃Ti₄O₁₂ ceramics were synthesized by solid-state sintering. Their microstructures and dielectric properties were investigated. Ca(Cu_{1− x} Zn _x )₃Ti₄O₁₂ single-phase structures were obtained up to x =0.1, and the Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ mixed-valent structure was enhanced with increasing Zn substitution. The giant dielectric response was significantly enhanced by Zn substitution. The dielectric constant increased with increasing x , and a giant dielectric constant plateau as high as ∼9 × 10⁴ was achieved for x =0.1 at 10 kHz, while that for x =0 was ∼3 × 10⁴. The enhanced giant dielectric response was profoundly concerned with the modified mixed-valent structure.     

Thermal Expansion of the Hexagonal (6H) Polytype of Silicon Carbide

The thermal expansion of the hexagonal (6H) polytype of α-SiC was measured from 20° to 1000°C by the X-ray diffraction technique. The principal axial coefficients of thermal expansion were determined and can be expressed for that temperature range by second-order polynomials: α¹¹= 3.27 × 10^–6+ 3.25 × 10^–9T – 1.36 × 10^–12 T ² (1/°C), and ş₃₃= 3.18 × 10^–6+ 2.48 × 10^–9 T – 8.51 × 10^–13 T ² (1/°C). The σ₁₁ is larger than α₃₃ over the entire temperature range while the thermal expansion anisotropy, the δş value, increases continuously with increasing temperature from about 0.1 × 10^–6/°C at room temperature to 0.4 × 10^–6/°C at 1000°C. The thermal expansion and thermal expansion anisotropy are compared with previously published results for the (6H) polytype and are discussed relative to the structure.