Optical properties of amorphous Ge28-xSe72Sbx thin films

Bulk glasses of formal composition Ge_28−xSe₇₂Sb_x with 0≤x≤28 were prepared by applying the quench technique. The optical transmission spectra—using a melt were measured in the range from 200 to 1200 nm for Ge_28−xSe₇₂Sb_x films which are prepared by thermal evaporation technique. A simple, straightforward procedure suggested by Swanepoel, which is based on the use of interference fringes, has been applied to calculate the film thickness. On other hand the driving absorption coefficient (α), consequently the band tail width E_e and the optical band gap have been estimated. The real (ε′) and imaginary parts (ε″) of the dielectric constant have been determined and the optical band gap can also be calculated as a function of imaginary part (ε″). The dispersion parameters such as E₀(single-oscillator energy), E_d (dispersive energy) and M₋₁, M₋₃ (moments) were discussed in terms of the single-oscillator Wemple–DiDomenico model.     

Influence of indium doping on the properties of spray deposited CdS0.2Se0.8 thin films

Polycrystalline indium doped CdS_0.2Se_0.8 thin films with varying concentrations of indium have been prepared by spray pyrolysis at 300 °C. The as deposited films have been characterized by XRD, AFM, EDAX, optical and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of indium doping concentration. AFM studies reveal that the RMS surface roughness of film decreases from 34.68 to 17.76 with increase in indium doping concentration up to 0.15 mol% in CdS_0.2Se_0.8 thin films and further it increases for higher indium doping concentrations. Traces of indium in CdS_0.2Se_0.8 thin films have been observed from EDAX studies. The optical band gap energy of CdS_0.2Se_0.8 thin film is found to decrease from 1.91 eV to 1.67 eV with indium doping up to 0.15 mol% and increase after 0.15 mol%. The electrical resistivity measurement shows that the films are semiconducting with minimum resistivity of 3.71 × 10⁴ Ω cm observed at 0.15 mol% indium doping. Thermoelectric power measurements show that films exhibit n-type conductivity.     

Investigation of DC conductivity and switching phenomenon of Se80Te20−xGex amorphous system

Se₈₀Te_20−xGe_x (x = 5, 7 and 10 at%) chalcogenide glass system was prepared by the conventional melt-quenching technique. Thin films of different thicknesses (283–823 nm) were prepared by thermal evaporation technique. The DC conductivity and switching properties were investigated in the temperature range 303–373 K below the corresponding glass transition temperature. The obtained results of DC conductivity showed that it decreases with decreasing Te content in the considered system, while it increases with temperature as well as with film thickness through the studied range. The conduction activation energy has two values E_σ1 and E_σ2 indicating the presence of two different conduction mechanisms through the studied range of temperature. The obtained results of the temperature dependence of DC conductivity are explained in accordance with Mott and Davis model. The switching effect in amorphous films was also investigated. The switching phenomenon for these compositions was of the memory type. The mean value of the threshold voltage increases linearly with increasing film thickness in the range 283–823 mm, while it decreases exponentially with increasing temperature in the investigated range. Values of the threshold voltage and power activation energies were obtained for the investigated compositions. The obtained results agree with the electrothermal model for the switching process.     

Optical properties of thermally evaporated Bi2Se3 thin films treated with AgNO3 solution

Bismuth selenide (Bi₂Se₃) thin films have been prepared onto clean glass substrates by the thermal evaporation technique. The deposited films were then immersed in silver nitrate solution for different periods of time, followed by annealing in Argon atmosphere at 473 K for 1 h, to obtain Ag/Bi₂Se₃ samples. The prepared films have been examined by X-ray and transmission electron microscopy for structural determination. The optical transmission and reflection spectra of the deposited films have been recorded within the wavelength range 400-2500 nm. The variation of the optical parameters of the prepared films, such as refractive index, n, and the optical band gap, E_g as a function of the immersion duration times has been determined. The refractive index dispersion in the transmission and low absorption region is adequately described by the well-known Sellmeier dispersion relation, whereby the values of the oscillator strength, oscillator position, the high-frequency dielectric constant, ε_∞ as well as the carrier concentration to the effective mass ratio, N/m* were calculated as a function of the immersion duration time.     

A study of optical properties and annealing effect on the absorption edge of pristine- and iodine-doped polyazomethine thin films

Aromatic polyazomethine (PPI) thin film have been obtained by chemical vapor deposition (CVD) method, via polycondensation process and characterized by X-ray diffraction, AFM, FTIR and detailed UV–Vis–NIR studies. Optical transmission and fundamental reflectivity spectra of the film have been examined within the spectral range 200–2500 nm. The refractive index (n), film thickness (d) and parameters of the absorption edge i.e. the optical gap (E_G) and the Urbach energy (E_U) have been found for the PPI film before and after iodine (I₂) doping. Then the annealing effect (from 25 °C every 25 °C up to 225 °C) on the absorption edge have been investigated during “in situ” spectral measurements. Amorphous character of the films allowed us to obtain the E_G and E_U values, in the way typical for amorphous semiconductors. As a result of iodine doping, the energy gap of the PPI film (2.19 eV) distinctly reduces to 1.73 eV, due to the polaron states and, simultaneously, the Urbach energy decreases. Thermal stability of the pure PPI film, being the typical feature of polyazomethines, was confirmed, while after iodine doping the film turned out to be thermo-stable only below 100 °C; then the distinct changes of the optical gap and the Urbach energy, connected with the iodine releasing process, have been presented and discussed.     

Optical constants of TiO1.7 thin films deposited by electron beam gun

Electron beam evaporation technique was used to prepare TiO_1.7 thin films onto glass substrates of thicknesses 50, 500 and 1000 nm for each sample. Transmittance measurements in the wavelength range (350–2000 nm) were used to calculate the refractive index n and the absorption index k using Swanepole's method. The optical band gap determined by three different methods and the values obtained were in the same harmony. Optical conductivity σ_opt, complex dielectric constant, relaxation time τ and dissipation factor tan δ were determined. The analysis of the optical absorption data indicates that the optical band gap was indirect transitions. According to Wemple and Didomenico method, the optical dispersion parameters E_o and E_d were determined.     

Electronic structure and optical property of As2(Te1−xSx)3 and As2(Te1−xSex)3 crystals

Single crystals of S- and Se-incorporated As₂Te₃ have been grown by vertical Bridgman method. The electronic structure and optical property of As₂(Te_1−xS_x)₃ [ATS] and As₂(Te_1−xSe_x)₃ [ATSe] series compounds have been characterized experimentally by thermoreflectance (TR) measurements in a wide energy range of 0.7-6 eV. X-ray diffraction measurements showed that the diffraction peaks of sulfur- and selenium-incorporated As₂(Te_1−xS_x)₃ 0 ≤ x ≤ 0.3 and As₂(Te_1−xSe_x)₃ 0 ≤ x ≤ 0.6 crystals shift to higher diffraction angles with the increase of the sulfur or selenium incorporations. The analysis of X-ray measurement revealed similar crystalline phase for the As₂Te₃ and those of the S- or Se-incorporated As₂Te₃. The experimental TR spectra of As₂(Te_1−xS_x)₃ (0 ≤ x ≤ 1) and As₂(Te_1−xSe_x)₃ (0 ≤ x ≤ 1) exhibit a lot of derivative-like spectral features in the vicinity of band edge as well as in the higher-lying bands. Transition energies and broadening parameters of the TR features at 40 and 300 K were analyzed. Compositional dependences of band gap and interband transition energies of the ATS and ATSe series were evaluated. The origins for the interband transitions in the ATS and ATSe are assigned. Based on the experimental analyses, the electronic structure of the diarsenic trichalcogenides, As₂(Te_1−xSe_x)₃ and As₂(Te_1−xS_x)₃, is hence being realized.     

The effects of substrate temperature on refractive index dispersion and optical constants of CdZn(S0.8Se0.2)2 alloy thin films

The effect of substrate temperature on optical properties of CdZn(S_0.8Se_0.2)₂ thin films deposited onto glass substrates by the spray pyrolysis method has been investigated. The average optical transmittance of the films was over 74% in the visible range. The optical absorption studies reveal that the transition is direct with band gap energy values between 2.86 and 2.92 eV. The optical constants such as refractive index and dielectric constant of the films were determined. According to variation of the substrate temperature, the important changes in absorption edge, refractive index and the dielectric constant were observed. The refractive index dispersion curves of the films obey the single oscillator model and oscillator parameters changed with substrate temperature. The most significant result of the present study is to indicate that substrate temperature of the film can be used to modify in the optical band gaps and optical constants of CdZn(S_0.8Se_0.2)₂ thin films.     

Effect of Li2O on structure and optical properties of lithium bismosilicate glasses

Bismuth–silicate glasses containing lithium oxide having composition xLi₂O·(85 − x)Bi₂O₃·15SiO₂ (5 ≤ x ≤ 45 mol%) were prepared by melt quench technique. Density, molar volume and glass transition temperature for all the glass samples were measured. IR spectroscopy was used for structural studies of these glasses in the range from 400 to 1400 cm⁻¹. The increase of Li₂O content in glass matrix results in the decrease of the Si–O–Si bond angle and increase in the covalence nature of Bi–O bond. IR spectra suggest the presence of distorted [BiO₆] octahedral units and the degree of distortion increases with the addition of Li₂O in these glasses. The optical transmission spectra in the wavelength range from 200 to 3300 nm were recorded and optical band gap (E_g) was calculated. The values of E_g lie in between 2.81 and 2.98 eV. The values of average electronic oxide polarizability as well as optical basicity in these glasses were found to be dependent directly on Bi₂O₃/Li₂O ratio.     

Low field magnetoresistance properties of (La0.75Sr0.25)1.05Mn0.95O3 polycrystalline thin films on a-SiO2/Si substrates prepared by ex-situ solid phase crystallization

We report the low field magnetoresistance (LFMR) properties of (La_0.75Sr_0.25)_1.05Mn_0.95O₃(LSMO) films on a-SiO₂/Si substrates, prepared by ex-situ solid phase crystallization of amorphous films deposited by dc-magnetron sputtering at room temperature. The average grain size of the LSMO films was gradually increased with increasing annealing temperature (T _an ) and film thickness. High T _an also caused the growth of an amorphous inter-diffusion layer between a-SiO₂ and LSMO. The highest LFMR values of 16 and 1.0 % were achieved at 100 K, 1.2 kOe and 300 K, 0.5 kOe, respectively, from an LSMO film of 200 nm thickness annealed at 900 °C. In accordance with a modified brick layer model, grain boundary areal resistance gradually increased with increasing T _an and decreasing film thickness due to the penetration of the amorphous inter-diffused phase into the LSMO grain boundary. Improved LFMR values are attributable to modification of the LSMO grain boundary into a more effective spin-dependent scattering center.     

Structural, morphological and electrical properties of spray deposited CdIn2Se4 thin films

Semiconducting n-CdIn₂Se₄ thin films have been deposited on to the amorphous and fluorine doped tin oxide (FTO) coated glass substrates using spray pyrolysis technique. The influence of solution concentration on to the photoelectrochemical, structural, morphological, compositional, thermal and electrical properties has been investigated. The PEC characterization shows that the short circuit current (I_sc) and open circuit voltage (V_oc) are at their optimum values (I_sc = 1.04 mA and V_oc = 409 mV) at the optimized precursor concentration (12.5 mM). The structural analysis shows the films are polycrystalline in nature having cubic crystal structure. The average crystallite size determined was in the range of 50-66 nm. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays, respectively. The addition of solution concentration induces a decrease in the electrical resistivity of CdIn₂Se₄ films up to 12.5 mM solution concentration. The type of semiconductor was examined from thermoelectric power measurement.     

Fluorescence and Judd–Ofelt analysis of Nd doped P2O5–Na2O–K2O glass

Sodium potassium phosphate glass consisting different Nd₂O₃ concentrations have been prepared to study the effect of Nd³⁺ concentration on optical absorption and fluorescence properties. From the absorption spectra, Racah (E¹, E², E³), spin-orbit (ξ_4f) and configuration interaction (α) parameters are calculated and reported for all the Nd³⁺ doped glasses. Judd–Ofelt intensity parameters (Ω₂, Ω₄, Ω₆) are evaluated and these parameters are used to study the covalency as a function of Nd³⁺ concentration. Results show that covalency decreases with the increase of Nd³⁺ concentration. By using these three intensity parameters, total radiative transition probabilities (A_T), radiative lifetimes (τ_R), branching ratios (β) and integrated absorption cross-sections (Σ) have been computed for certain excited states of Nd³⁺ in these mixed alkali phosphate glasses for all the concentrations. From the fluorescence spectra, peak stimulated emission cross-sections (σ_p) have been calculated for the two transitions, ⁴G_7/2 → ⁴I_13/2 and ⁴G_7/2 → ⁴I_11/2 of Nd³⁺ in all these glass matrices. From the absorption spectra, the optical band gaps (E_opt) for both direct and indirect transitions have been obtained. All these spectroscopic parameters are compared for different Nd³⁺ concentrations. From these studies, a few transitions are identified for laser excitation among various transitions.     

Structure and optical properties of nanocrystalline NiO thin film synthesized by sol–gel spin-coating method

NiO thin film was prepared by sol–gel spin-coating method. This thin film annealed at T = 600 °C. The structure of NiO thin film was investigated by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM). The optical properties of the deposited film were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300–800 nm. The values of some important parameters of the studied films are determined, such as refractive index (n), extinction coefficient (k), optical absorption coefficient (α) and band energy gap (E_g). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (_∞), the third-order optical nonlinear susceptibility χ⁽³⁾, volume energy loss function (VELF) and surface energy loss function (SELF) were determined.     

Optical constants of new amorphous As–Ge–Se–Sb thin films

The present paper reports the effect of replacement of selenium by antimony on the optical constants of new quaternary chalcogenide As₁₄Ge₁₄Se_72−xSb_x (where x = 3, 6, 9, 12 and 15 at.%) thin films. Films of As₁₄Ge₁₄Se_72−xSb_x glasses were prepared by thermal evaporation of the bulk samples. The transmission spectra, T(λ), of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel, based on the use of the maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing antimony content is found to affect the refractive index and the extinction coefficient of the As₁₄Ge₁₄Se_72−xSb_x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing antimony content the refractive index increases while the optical band gap decreases.     

A new ternary compound YbZn2As2 with mixed valency of Yb

A new compound with chemical formula YbZn₂As₂ and ‘anti’-La₂O₃-type crystal structure (space group P3m1) has been synthesized for the first time. The trigonal lattice constants of the compound are a=0.4157 and c=0.6954 nm. In the temperature range 77–500 K, the magnetic susceptibility of YbZn₂As₂ follows the Curie–Weiss law, indicating antiferromagnetic interactions of the Yb ions and yielding a Curie temperature θ=−52.8 K and an effective magnetic moment μ_eff=2.35 μ_B (the Bohr magneton) per Yb ion. This means that a part of the Yb ions has valency 3+, instead of 2+ for all the Yb ions, as would be expected from their formal oxidation number, i.e. YbZn₂As₂ is a compound with mixed valency of Yb. YbZn₂As₂ exhibits p-type conductivity with a room temperature electrical resistivity of 0.15 Ω cm which decreases when lowering temperature and reaches a practically constant value of 0.08 Ω cm below 20 K.     

Microstructure and characterization of La2O3 and CeO2 doped diamond-like carbon nanofilms

Seven kinds of hydrogen-free La₂O₃ and CeO₂ doped DLC films with thickness of 220-280 nm were deposited on Si (100) substrates by unbalanced magnetron sputtering. Nanoparticles with diameter of 20-30 nm are formed on the surface of films. The surface roughness Ra of films is in the range of 1.5-2.0 nm. C, La, Ce and O elements distribute uniformly along the depth direction, and C, La, and Ce elements diffuse into the Si substrate at the interface. X-ray photoelectron spectroscopy confirms that the La₂O₃ and CeO₂ form within the DLC amorphous films, and Raman spectra indicate the obvious amorphous characteristics of DLC films. High-resolution transmission electron microscopy shows the nanocrystallines structure with diameter of 2-3 nm of 16% La₂O₃ and 10% CeO₂ doped DLC films, and Fourier transformation spectroscopy also exhibits the obvious crystalline characteristics. In this work, the microstructure of two kinds of rare earth oxides doped DLC composite films is measured and analyzed.     

CuS-based thin films for architectural glazing applications produced by co-evaporation: Morphology, optical and electrical properties

Copper sulphide thin films in the 90–300 nm thickness range have been deposited on soda–lime glass substrates by thermal co-evaporation of Cu and S. Depending on the film thickness, the optical transmittance in the visible region is of about 50% for the thinnest film and 19% for the thickest film, with the corresponding near-infrared transmittance dropping from 11% to near-zero at 2500 nm as the film thickness increases from 90 to 300 nm. A resistivity of ρ ~ 10^− 4 Ω cm has been obtained for the films. The optoelectronic properties of the films remained practically unchanged after one year stored under laboratory ambient. The optical properties obtained for selected CuS-based films make them suitable for their use as effective solar control glazings in warm climates.     

Effect of Te additions on the glass transition and crystallization kinetics of (Sb15As30Se55)100−xTex amorphous solids

Differential scanning calorimetry results under non-isothermal conditions of chalcogenide (Sb₁₅As₃₀Se₅₅)_100?xTe_x (where 0 ≤ x ≤ 10 at.%) glasses are reported and discussed. The dependence of the characteristic temperatures “glass transition temperature (T_g), the crystallization onset temperature (T_c) and the crystallization temperature (T_p)” on the heating rate (β) utilized in the determination of the activation energy for the glass transition (E_g), the activation energy for crystallization (E_c), the glass thermal stability (ΔT = T_c ? T_g) and the Avrami exponent (n). The composition dependence of the T_g, E_g, and E_c were discussed in terms of the chemical bond approach, the average heats of atomization and the cohesive energy (CE). The diffractogram of the transformed material shows the presence of some crystallites of AsSb, Sb₄Te₆, As₂Se₃ and Sb₂Se₃ in the residual amorphous matrix.