共查询到20条相似文献,搜索用时 0 毫秒
1.
《Device and Materials Reliability, IEEE Transactions on》2009,9(2):180-189
2.
3.
Positive Bias Temperature Instability Effects in nMOSFETs With $hbox{HfO}_{2}/hbox{TiN}$ Gate Stacks
《Device and Materials Reliability, IEEE Transactions on》2009,9(2):128-134
4.
《Device and Materials Reliability, IEEE Transactions on》2009,9(2):203-208
5.
《Device and Materials Reliability, IEEE Transactions on》2009,9(3):425-430
6.
《Industry Applications, IEEE Transactions on》2008,44(5):1403-1409
7.
Yi-Hao Pai Chung-Hsiang Chang Gong-Ru Lin 《IEEE journal of selected topics in quantum electronics》2009,15(5):1387-1392
Near-infrared (NIR) photo- and electroluminescence (PL and EL) of Si nanocrystals buried in Si-rich SiOx, film, and their correlation with the structural phase transformation and the varied oxygen composition of SiOx, are investigated. By detuning the N2O flowing ratio (YN 2 O = [N2O/(N2O + SiH4)] times 100%) from 93% to 80% during plasma-enhanced chemical vapor deposition growth, the oxygen composition ratio of the Si-rich SiOx, can be adjusted from 1.64 to 0.88. The grazing incident X-ray diffraction and X-ray photoelectron spectroscopy spectra indicate that the SiOx, transforms its structural phase from Si + SiO2 isomer to Si + SiO + SiO2 isomer. With O/Si ratio >1.24, the SiOx, matrix becomes SiO2 isomer, whereas the SiOx, structure approaches SiO phase at O/Si ratio that is nearly 1.0. The formation of SiO matrix in SiOx, grown at YN 2 O below 85% reduces the precipitated Si nanocrystal density from 2.8 times 1018 to 7 times 1016 cm-3, and monotonically attenuates the NIR PL by one order of magnitude. Such a structural phase transformation from SiO2 to SiO in SiOx with lower O/Si ratio causes the degradation in EL power conversion efficiency and external quantum efficiency (EQE). Maximum EL power of 0.5 muW and EQE of 0.06% are obtained from MOSLED made on SiOx, with optimized O/Si ratio of 1.24. 相似文献
8.
《Industry Applications, IEEE Transactions on》2008,44(5):1431-1435
9.
Diaz G. Gonzalez-Moran C. Gomez-Aleixandre J. Diez A. 《Power Systems, IEEE Transactions on》2009,24(4):1720-1730
This paper focuses on representing the state space model of a microgrid in which power regulated (PQ ) and voltage/frequency regulated (Vf) generation units share a distribution system. The generation units considered in this paper are inverter interfaced. This introduces some interesting modeling problems which are treated in the paper, such as the decoupled cascaded control schemes or the non-negligible grid dynamics. A modeling approach is proposed based on four defined complex vectors. These vectors allow for complex-valued system matrices to be formed in a quite automated way. Moreover, a convenient partition of the system matrices is proposed, which in turn allows fast and easy modifications. Additionally, a multivariable methodology is proposed to simultaneously find the control system gains in an optimal sense. A 69-bus radial system, supplied by 20 generation units, is used to demonstrate how the proposal is of easy implementation to conduct small-signal stability analyses. 相似文献
10.
《IEEE journal of selected topics in quantum electronics》2009,15(1):93-102
11.
《Device and Materials Reliability, IEEE Transactions on》2008,8(4):635-641
12.
《Device and Materials Reliability, IEEE Transactions on》2009,9(2):163-170
13.
《Device and Materials Reliability, IEEE Transactions on》2009,9(4):529-536
14.
《Device and Materials Reliability, IEEE Transactions on》2008,8(3):576-581
15.
16.
Neugroschel A. Bersuker G. Choi R. Byoung Hun Lee 《Device and Materials Reliability, IEEE Transactions on》2008,8(1):47-61
A relative contribution of the interface and bulk dielectric defects to negative bias temperature instability (NBTI) in the metal/HfO2/SiO2 gate stacks was investigated. Interface trap generation was assessed by the direct-current current-voltage (DCIV) technique, which independently measures the interface defect density from bulk oxide charges and delineates the contribution of the interface defect generation to the overall NBTI measured by the threshold voltage shift (DeltaVTH). The metal/high-fc induced traps in the interfacial SiO2 layer were found to control the fast transient trap charging/generation processes, which affect the power-law exponents of DeltaVTH and the stress-generated interface trap density DeltaDIT stress time dependencies. Similar kinetics of the long-term DeltaVTH(t) and DeltaDIT(t) dependencies in the high-fe and SiO2 gate stacks suggests that the degradation is governed by the same mechanism of trap charging/generation in the SiO2 film. The investigation leads to a novel methodology for the time-to-failure (TTF) extrapolation, in which the measured DeltaVTH and DeltaDIT values are adjusted for the contributions from the fast transient defect charging/generation processes. It is shown that the conventional TTF analysis might greatly overestimate TTF. Post-NBTI stress recovery at zero relaxation voltage measured by the DCIV method showed that oxide charges and interface traps relax at the same rate indicating that the interface processes may dominate DeltaVTH relaxation. At positive relaxation voltages, however, the oxide charge relaxation exhibits a fast transient component. Relaxation at positive bias also shows an as yet unexplained fast component in the interface trap recovery. 相似文献
17.
《IEEE journal of selected topics in quantum electronics》2009,15(3):612-617
18.
Castillo E. Conejo A.J. Pruneda R.E. Solares C. Menendez J.M. 《Power Systems, IEEE Transactions on》2008,23(2):296-305
This paper provides a technique to determine the minimum required measurement set to ensure observability in state estimation even if any meters fail. The technique relies on solving a nonlinear integer programming problem. The proposed procedure is illustrated through a simple example and three case studies based on the IEEE Test Systems. Conclusions are finally drawn. 相似文献
19.
Sameshima H. Wakui M. Fang-Ren Hu Hane K. 《IEEE journal of selected topics in quantum electronics》2009,15(5):1332-1337
Combination of GaN light source and Si-microelectromechanical systems (MEMSs) is a promising hybrid structure for optical MEMS. As one of GaN-Si hybrid structures, a freestanding GaN/HfO2 membrane was fabricated on Si substrate. Unlike conventional GaN membrane on Si substrate, the fabricated membrane had a tensile stress by using the HfO2 layer. Therefore, the GaN/HfO2 membrane was flat enough to be useful for several MEMS. The GaN crystal was grown by molecular beam epitaxy on the HfO2 layer deposited on Si substrate. The surface of the HfO2 layer was nitrified before GaN crystal growth, and thus, a part of HfO2 surface was changed to HfN, the lattice of which matched well to that of GaN. The characteristics of the GaN crystal grown on the nitrified HfO2 layer were also investigated. 相似文献
20.
Chenan Xia Zhao Xu Islam M.N. Terry F.L. Freeman M.J. Zakel A. Mauricio J. 《IEEE journal of selected topics in quantum electronics》2009,15(2):422-434
A novel, all-fiber-integrated supercontinuum (SC) laser is demonstrated and provides up to 10.5 W time-averaged power with a continuous spectrum from ~0.8 to 4 mum. The SC is generated in a combination of standard single-mode fibers and ZrF4-BaF2-LaF3-AlF3-NaF (ZBLAN) fluoride fibers pumped by a laser-diode-based cladding-pumped fiber amplifier system. The output SC pulse pattern can be modulated by directly modulating the seed laser diode. Near-diffraction-limited beam qualities are maintained over the entire SC spectrum. The SC average power is also linearly scalable by varying the input pump power and pulse repetition rate. We further investigate the theoretical limitations on the achievable average power handling and spectral width for the SC generation in ZBLAN fibers. Based on the thermal modeling, the standard ZBLAN fiber can handle a time-averaged power up to ~15 W, which can be further scaled up to ~40 W with a proper thermal coating applied onto the ZBLAN fiber. The SC long-wavelength edge is limited by the nonlinear wavelength generation processes, fiber bend-induced loss, and glass material loss. By using a ZBLAN fiber with a 0.3 numerical aperture, the SC spectrum could extend out to ~4.5 mum, which is then limited by the material loss. 相似文献