Model for the anomalous off-current of polysilicon thin-filmtransistors and diodes

Due to the different crystallographic orientations of the grains in polysilicon thin films, their grain boundaries exhibit a high density of crystallographic defects that are often electrically active. Applying the equations of the transitions between different defect energy levels to a simple junction theory, the qualitative and, to a certain extent, quantitative characteristic trends of the reverse current of such defected junctions can be explained. This constitutes an important modeling method of a problem that still exists in the use of polysilicon thin-film transistors for certain applications     

An analytical model for the lateral channel electric field in LDDstructures

An analytical model for the lateral channel electric field in lightly doped drain (LDD) MOSFETs is developed from a pseudo-two-dimensional analysis. The model gives a prediction of the channel field when the lightly doped region is both fully depleted and partially depleted. The normal field mobility degradation and variation of the saturation field E_sat with gate voltage have been taken into account in the model. The boundary conditions for determining the pinch-off point L_sat proposed in the model along with the normal field mobility degradation consideration make possible the prediction of the variation of the pinch-off with the gate bias and the maximum value of the electric field E_max . The differences between this model, existing models, and two-dimensional numerical simulations are discussed     

Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors

The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition steps compatible with the power bipolar technology and their influence on electrical characteristics were studied.<>     

Energy levels of a quantum ring in a lateral electric field

The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r₂/r₁, where r₂ (r₁) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorption are reported as a function of the electric field.     

Influence of lateral field on the relaxation oscillation frequencyof semiconductor lasers

We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices     

电场对碲镉汞光电二极管双光子吸收跃迁的影响

实验研究了具有pn结结构的碲镉汞光电二极管的双光子吸收.激发光源采用了皮秒红外脉冲激光.尽管入射光子能量仅为碲镉汞材料带隙的60%左右,在光电二极管两电极端仍然观察到了显著的光伏响应信号.利用线性关系拟合双对数坐标系下光伏响应与入射光强的关系,发现两者呈现二次幂函数增强趋势,表明这种光伏响应是一种典型的双光子吸收过程.通过调节光电二极管两端的反向偏压,空间电荷区内的双光子吸收系数可比耗尽层外的强致130倍,这种双光子吸收系数的场致增强现象可归因为双光子吸收的FK效应所致.对比空间电荷区内外双光子吸收产生的光生载流子数量,证实空间电荷区内的双光子吸收会强烈地影响器件的光伏响应.     

Grain boundary states and the characteristics of lateral polysilicon diodes

In lateral n⁺p^?p⁺ diodes made in LPCVD polycrystalline silicon films, the energy distribution of the traps at the grain boundaries is found to be U shaped. They have a density of about 10¹² cm^?2 and a capture cross section of about 10^?16 cm². The forward current of the diodes is ascribed to recombination, the reverse current to field-enhanced generation via these traps.     

Influence of an electric field on the strained state of a heterostructure

In the framework of an electron-deformation model, a mechanism of electron-deformation dipole formation at a strained heterointerface was considered. For a ZnSe/ZnS heterostructure, an external electric field ～120 kV/cm normal to the heterointerface brought about an additional compression strain of ～4% (～3%) in the ZnSe (ZnS) lattice. For an opposite field direction, a tensile strain of ～5% (～5%) was observed.     

地物环境对地面大气电场测量的影响

地物环境对地面大气电场测量结果的影响较大,这在地面大气电场仪联网中将会影响以致失去各观测点数据间的可比性。针对这一问题将地面上凸出的建筑物、树木等简化为形状规则的立方体、柱体和球体三种基本单元,分别对这三种基本单元周围的大气电场进行了计算和讨论,并采用电磁场仿真软件Ansoft Maxwell进行了仿真分析,得出了地面凸出物的形状、距离、高度对大气电场影响的解析关系式以及不同条件下的环境修正系数。     

Spin response of 2D electrons to a lateral electric field

The spin orientation of two-dimensional (2D) electrons by a lateral electric field is considered. The electron dispersion law is assumed to contain linear terms due to the spin-orbit band splitting in an asymmetric quantum well. The coefficient of spin orientation in a DC electric field is found. The mean electron spin is oriented in the sample plane perpendicularly to the electric field. The interaction of an AC electric field with spins of 2D electrons is studied. It is shown that transitions between different spin states give rise to a narrow absorption band. These states are mixed with 2D plasmons in the frequency range related to these transitions, with the result being that the plasmon spectrum is modified and a new type of oscillations arises (spin-plasmon polariton). The problem of the generation of spin-plasmon polaritons by an external field is solved.     

Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices

A simple one-dimensional (1-D) analytical solution method for analyzing and determining the breakdown properties of reduced surface field (RESURF) lateral devices is presented. The solution demonstrates quantitatively and qualitatively the reshaping and reduction of the electric field and its dependence on the device/process key parameters. The solution is based on a simple and physical charge-sharing approach that takes into account the modulation of the lateral depletion layer spreading caused by the vertical depletion extension, and therefore transforms the inherent two-dimensional effects into a simple 1-D equivalent. It also provides a reasonable insight on the breakdown voltage sensitivity of lateral RESURF devices to key device/process parameters that other researchers failed to provide. Using the technique, device designers can set and choose the optimal processing window of the device's critical layers to yield high breakdown voltages. The results obtained using the proposed solution method agree well with the experimental and simulation results.     

电场对负性向列相液晶薄盒影响的研究

基于Landau-de Gennes理论,利用松弛迭代法,研究了电场对垂直排列(VA)液晶薄盒和反扭曲向列相(ITN)液晶薄盒的影响。两系统在相同条件下的倾角变化相同,且系统双轴性与本征值的变化只取决于倾角的变化。研究表明,当盒厚大于一定临界值时,液晶系统一直处于正序参数态,此时ITN薄盒的扭曲角由线性排列逐渐变化到呈45°角排列;当小于此临界盒厚时,在一定电压下会出现负序参数单轴态,此时ITN薄盒的扭曲角会偏离线性变化出现回滞。     

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated.     

Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide

The results of a study on photoelectric properties of a Schottky barrier based on n-type CdP₂ are considered. The effect of the barrier electric field on photocurrents caused by photoelectron emission from metal and optical generation of excess charge carriers in the semiconductor was studied. It was found that the dependence of the photocurrent on the light-modulation frequency is controlled by level recharging times at the interfaces between the space-charge and quasi-neutrality regions and between semiconductor and metal. Good agreement between the calculated and experimental results was achieved.     

Influence of the nature of the mask on polysilicon gate patterning in high density plasmas

High density plasma etching processes of polysilicon gates on thin gate oxide (4.5 nm) have been studied for sub-quarter micron device fabrication. The influence of the mask material on the etching performance has been investigated using either a photoresist mask or an oxide hard mask. Trenching phenomena can be observed at the edges of the gates with both types of mask. When using a photoresist mask, severe defects are formed in the gate oxide near the polysilicon gate, showing that the gate oxide has been preferentially etched during the process. We show that these defects can be attributed to the trenching induced by the main etching step of the process, which is transferred into the gate oxide before the overetch starts. The transfer of the trenching effect depends strongly on the polysilicon-to-oxide selectivity which is shown to be dependent on the presence of carbon in the process chamber. When replacing the photoresist mask by an oxide hard mask the polysilicon-to-oxide selectivity can be improved by a factor of greater than three. Therefore, the use of an oxide hard mask results in a larger process window without creating undesirable defects in the active areas of the devices.     

基于磁通元电场叠加法的涡旋电场计算

提出用磁通元电场叠加法求解涡旋电场,利用该方法推导出了空间旋转平面区域产生的涡旋电场的时域表达式,验证了磁通元电场叠加法求解涡旋电场的正确性。     

Influence of polarization electric field on the dielectric properties of BaTiO3-based ceramics

The titanate of barium (BaTiO₃) is a ferroelectric material with perovskite structure. The electric properties (ferroelectricity, positive temperature coefficient, piezoelectricity, etc.) of BaTiO₃ were largely studied. Usually, addition of small quantities of impurity can modify the dielectric properties of BaTiO₃ and widen its number of applications. In this investigation different additions of sodium niobate (NaNbO₃), according to the composition, (1−x) BaTiO₃+x NaNbO₃ with x=1, 3, 5, 7 and 10 mol%, were considered. Additionally, the effect of simultaneous addition of 3 mol% NaNbO₃ and 3 mol% SiO₂ on the dielectric properties we studied as function of temperature, frequency and the applied bias. The obtained results reveal a net evolution of permittivity with addition. Furthermore, the obtained results show that the permittivity is independent of the applied electric field at temperature lower than Curie point (T_c), but presents relatively high values at low frequencies. Beyond this temperature, the permittivity considerably increases (about 25×10³) and largely depends both on frequency and applied voltage.     

DC pulse hot-carrier-stress effects on gate-induced drain leakagecurrent in n-channel MOSFETs

The DC pulse hot-carrier-stress effects on the degradation in gate-induced drain leakage (GIDL) current in nMOSFETs in a high field regime and the mechanisms of stress-induced degradation are studied. In this paper, we investigate DC pulse stress parameters in GIDL which include frequency, rise/fall time, and stressing pulse amplitude. The contributions of hot-hole injection, interface state generation, and hot-electron injection in a period of transient stress are identified. It is found that the device degradation increases with increased pulse frequency under maximum gate current stress, while it decreases with reduced pulse frequency under maximum substrate current stress. This work is useful for DC pulse hot-carrier-stress reliability analysis under circuit operation     

Characterization of polysilicon oxides thermally grown anddeposited on the polished polysilicon films

This work examines the characteristics of polyoxides thermally grown and deposited on polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology for polysilicon films. The thermally-grown and deposited polyoxides on the polished polysilicon films exhibit a lower leakage current, higher dielectric breakdown field, higher electron barrier height, lower electron trapping rate, lower density of trapped charges, and markedly higher charge to breakdown (Q_bd) than the conventional polyoxide. In particular, the deposited polyoxide on the polished polysilicon film has the highest dielectric breakdown field, lowest electron trapping rate, and highest charge to breakdown due to the planar polyoxide/polysilicon interface. In addition, experimental results indicate that the trapped charges of the polished samples are located in the polyoxides' upper portion, which differs from conventional polyoxides. Undoubtedly, the deposited polyoxide on the polished polysilicon film considered herein is the most promising candidate to yield optimum characteristics of polyoxide     

Influence of laser recrystallization and hydrogen annealing on electrical characteristics of polysilicon

 Asenic ions are implanted with doses of 5×10~(11)—5×10~(15)/cm~2 into LPCVD polysilicon films on SiO_2 isolating substrate.The polysilicon films have been recrystallized with CW Ar~+ laser before implantation.Electrical measurements show that the resistivity is lowered and the mobility is increased significantly at low doping concentration(～10~(17)As~+/cm~3).Plasma hydrogen annealing is performed on laser-recrystallized samples.The electrical characteristics of plasma hydrogen annealed samples are close to that of single crystalline silicon.It is found that the resistivity decreases from 1.2 Ω.cm to 0.45 Ω.cm,the mobility rises from 62 cm~2/V.s to 271 cm~2/V.s,the electrical activation energy reduces from 0.03 eV to -0.007 eV and the trapping state density at the grain boundary drops from 3.7×10~(11)/cm~2 to 1.7×10~(11)/cm~2.Based on the existing theoretical models for conduction in polysilicon, a new formula for large grain polysilicon has been proposed,with the help of which,a good agreement between theory and experimental results is achieved within the doping concentration range from 10~(16)/cm~3 to 10~(20)/cm~3.