用于光导板的亚微米光栅透射衍射特性分析

提出了利用亚微米光棚制作光导板的方法,用严格耦合波理论博分析了亚微米光栅从光密介质到光疏介质的1级透射衍射效率与光栅槽深的关系,讨论在满足基底全反射条件的入射角下,对应于红、绿、蓝(红光700mn,绿光555nm,蓝光465nm)三色光的亚微米光栅(0.651μm、0.516μm、0.433μm)在导波条件下的光场衍射特性,并用实验证明在导波条件下1级衍射效率与光栅槽深关系的可靠性,给出亚微米光栅型光导板的初始结构,进行误差分析.     

利用亚微米光栅制作导光棒方法研究

研究了周期为0. 4～0. 7μm结构的光栅的光导特性,用严格耦合波理论分析计算衍射 效率与光栅槽深的关系,提出利用衍射效率与槽深的线性段进行导光棒设计,导光棒表面导光单元由三套出射光主波长分别是红光700nm,绿光546. 1nm,蓝光435. 8nm的亚微米光栅组成,用红、绿、蓝三色LED作为光源,通过光栅空频控制出射光方向、槽深调节衍射效率,达到导光棒出射光源的均匀性。     

镀铬基片全息光栅光刻胶掩模槽形参量光谱检测方法

为了检测全息光栅掩模槽形,运用严格耦合波理论(RCWT)分析镀铬基片光栅光刻胶掩模反射0级衍射效率光谱曲线与槽形参量的关系。测量了400~700 nm波长范围内60°入射角条件下的镀铬基片全息光栅光刻胶掩模反射0级衍射效率光谱曲线。将实验曲线与不同槽形参数对应理论曲线相减、求标准差进行匹配,标准差最小者为匹配结果,从而找到被测掩模的槽深和占宽比(光栅齿宽占光栅周期的百分比)。结果表明,该方法图形匹配速度快,误差容限大,匹配结果与电镜结果相符。对于要求同时检测矩形或接近矩形槽形的全息光刻胶光栅掩模的槽深和占宽比,该方法完全适用。     

9.77 μm激光器零级耦合输出选频振荡光栅的设计和研制

建立了实际刻划光栅的物理模型，给出了相应的衍射效率表达式，进而阐述了红外激光器零级耦合输出选频振荡闪耀光栅的设计原理。根据理论分析结果，采用调整刻划负载控制三角槽形闪耀光栅零级面。双向逐步逼近1级和零级衍射效率设计值的方法和工艺，研制了在利特罗(Littrow)安装下1级衍射效率为86．5％，零级衍射效率为10．3％的9．77μm红外激光器零级耦合输出选频振荡镀金闪耀光栅。检验结果表明，由加工误差引入的1级和零级衍射效率与设计中心值的偏离量分别仅为0．6％和3％。     

嵌入式光栅多层结构锥形衍射的严格耦合波理论研究

基于严格耦合波分析理论,将嵌入式光栅多层结构平面衍射的理论模型扩展至锥形衍射的情况,可以模拟具有任意波长、偏振态、方位角和入射角的平面波入射该多层结构后形成的衍射。在此基础上,研究了微机械声光传感器锥形衍射中+1 级光衍射效率的收敛性。仿真表明:TM（Transverse Magnetic）偏振光入射且光栅周期为4 m 时,当谐波数M（2n+1）分别为67、69、71 时,+1级光衍射效率分别为28.86%、28.84%、28.86%,收敛性较好。另外,优化了微机械声光传感器的位移灵敏度,当入射角为22、方位角为10、光栅周期为1 m 时,与周期为4 m 的+1 级衍射光相比,TE、TM 偏振光入射时0、+1 级衍射光的位移灵敏度均提高一倍,可以准确地监测该传感器中声压或驱动电压引起的金属膜的位移。     

10.6μm激光器一级输出高衍射效率闪耀光栅的研制

建立了实际刻划光栅的物理模型,给出了相应的衍射效率表达式,并研制出了在Littrow安装下一级衍射效率达到97．2％的大功率10．6μm红外激光器用反射式闪耀光栅。实际刻划光栅通常都存在零级面,采用傅里叶分析方法可以推导出计算带有零级面的闪耀光栅衍射效率的一般表达式,由理论分析可知,零级面是造成闪耀光栅衍射效率下降的原因之一。在工艺过程中．通过加大刻划负载使零级面减小,加大侧向压力强化对闪耀面的抛光等,是提高光栅刻槽质量和衍射效率的有效途径。     

亚波长光栅的模态特性与衍射效率及其应用

采用模态理论研究了TE偏振与TM偏振入射光在一维亚波长光栅区域的模式特性,分析了不同传播模态的有效折射率及其差值与入射条件、光栅周期、光栅深度及光栅填充比之间的关系,使用干涉法得到了在考虑光栅凹槽深度的情况下两种模态的光栅衍射效率。应用亚波长光栅的模式特性与光栅衍射效率设计了一种偏振分束器,其特性是在利特罗入射的条件下,单色光波在0级衍射处为TM偏振,在-1级处为TE偏振。     

微米亚微米矩形光栅衍射特性的实验研究

本文应用微电子制板技术、电子束扫描曝光和离子刻蚀技术研制成功微米、亚微米级宽度的矩形光栅结构，并对其进行了衍射特性的研究。实验测试数据表明了当光栅的周期接近使用的照明光的波长时，具有明显的矢时衍射特性。     

电场边缘效应对液晶光栅特性的影响

建立了液晶光栅与等效矩形光栅之间的理论模型,且计算了零级衍射效率和槽深h的理论数据。将实验数据与理论模型进行比较,得到了考虑电场边缘效应时的修正系数α和槽深h的修正计算公式,通过修正公式得出了槽深h和占空比修正值Δρ的图形,最后分析了电场边缘效应对液晶光栅衍射特性的影响。当电控液晶光栅ρ=0.5:光线正入射时进行实验测试,发现由于电场边缘效应,液晶光栅偶级衍射出现,并分析了随着电压的变化,边缘效应对液晶光栅衍射效率、相位差、占空比修正值Δρ及槽深h变化的影响。     

1×3光栅光阀式光开关分析与设计

文章结合光栅光阀响应时间短和反射光栅衍射效率高的特点,设计了一种光栅光阀式1×3微型光开关.理论计算和对比实验表明,在波长为1.3 μm,闪耀角和入射角分别为5.4 °和0 °的情况下,开关时间为微秒级.与同类光开关相比,这种开关具有开关时间短、衍射效率高和工作电压低的优点.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first