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4,4’-双(4-氨基苯氧基)二苯硫醚及其聚酰亚胺的合成与性能研究 总被引:4,自引:2,他引:2
4,4'-二羟基二苯硫醚(44DHDPS)、4-氯硝基苯(4CNB)和碳酸钾在N,N-二甲基甲酰胺(DMF)和甲苯的混合溶剂体系中回流反应,合成得到了4,4'-双(4-硝基苯氧基)二苯硫醚(DNDPSE);随后,在Pd/C-水合肼的还原体系中,被进一步还原,得到了4,4'-双(4-氨基苯氧基)二苯硫醚(DADPSE)。另外,将所得到的4,4'-双(4-氨基苯氧基)二苯硫醚(DADPSE)与均苯四甲酸二酐(PMDA)在强极性非质子有机溶剂中进行聚合反应,得到了粘稠状的聚酰胺酸(DADPSE/PMDA-PAA)溶液,涂膜、热亚胺化,得到了相应的聚酰亚胺(DADPSE/PMDA-PI)薄膜,并对其性能进行了研究。 相似文献
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以4,4'-二羟基二苯醚、对硝基氯苯为原料,缩合制得4,4'-二(4-硝基-苯氧基)二苯醚,后采用水合肼还原得到4,4'-二(4-氨基-苯氧基)二苯醚(BAPE)单体;将其与PMDA(均苯四甲酸二酐)通过缩聚反应、热环化制备了一种多苯氧基型聚酰亚胺。结果表明:缩合制备4,4'-二(4-硝基-苯氧基)二苯醚,收率达到99.3%以上。还原制备4,4'-二(4-氨基-苯氧基)二苯醚(BAPE)单体,熔点125.9~126.8℃,母液回用后收率达85.9%以上。此种单体制备的聚酰亚胺玻璃化转变温度达280.8℃,具有较高的耐热性能,拉伸强度达到99.67 MPa,断裂伸长率为17.32%,是一种性能优良的材料。 相似文献
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1,3-双(4-氨基苯氧基)苯及其聚酰亚胺的合成、表征和应用研究 总被引:3,自引:3,他引:0
合成了二胺单体1,3-双(4-氨基苯基)苯。采用该二胺和二苯酮四酸二酐聚合,合成了较高分子量的聚酰亚胺前驱体,通过热亚胺化和化学亚胺化得到了聚酰亚胺粉末和薄膜,通过TGA、DSC、拉伸等测试,对聚酰亚胺的有关性能进行了表征;对该聚酰亚胺在二层柔性覆铜板上的应用进行了初步研究。 相似文献
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联苯型聚酰亚胺复合管膜的制备及其电性能研究 总被引:1,自引:1,他引:0
通过原位缩聚,采用3,3',4,4'-联苯四羧酸二酐(BPDA)和4,4'-二氨基二苯醚(ODA)为主要原料制备了聚酰亚胺(PI)复合管膜.首先合成聚酰胺酸(PAA),并旋涂制备了聚酰胺酸管膜,然后将溶有碳粉的氟树脂与纯聚酰胺酸管膜复合并热亚胺化,最后再涂覆保护层,制得PI复合管膜.采用傅里叶红外光谱仪(FT-IR)、差式扫描量热法(DSC)、热重分析(TGA)、精密阻抗分析仪和高阻计分别对聚酰亚胺复合管膜的结构、玻璃化转变温度(Tg)、分解温度(Td)、介电性和电阻率进行了表征.研究结果表明,聚酰亚胺管膜的Tg为312.5℃,失重5%的分解温度为560℃.PI复合管膜的介电常数较纯PI管膜稍有增加,碳粉层的加入有效改善了纯PI管膜的介电常数随频率的突变行为,而介质损耗方面.PI复合管膜比纯PI管膜稍有降低.PI复合管膜的表面电阻率比纯PI管膜降低了92.85%,体积电阻率比纯PI管膜降低了77.30%. 相似文献
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3,3',5,5'-四甲基-4,4'-二氨基二苯甲烷及其聚酰亚胺的合成与应用 总被引:3,自引:0,他引:3
在酸催化条件下,利用2,6-二甲基苯胺和甲醛为原料,一步法制得了高纯度的3,3',5,5'-四甲基-4,4'-二氨基二苯甲烷(AMD),运用H-NMR,FTIR,HPLC和熔点测试技术对其进行了表征。结果表明:合成的AMD纯度较高;AMD和BTDA聚合制得较高分子量的聚酰胺酸,经化学亚胺化得到聚酰亚胺(PI),将其溶解后涂覆制得的聚酰亚胺薄膜有一定的溶解性、成膜性及较好的力学性能。 相似文献
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新型聚酰亚胺的合成及其性能 总被引:1,自引:0,他引:1
用全间位苯氧基键接的芳族二胺即 1 ,3-双 (3-氨基苯氧基 )苯 (简称 BAPB) ,在室温下 ,以DMAC为溶剂 ,分别与均苯四甲酸二酐 (PMDA)、氧撑二苯酐 (ODPA)、3,3′,4,4′-二苯酮四羧酸二酐 (BTDA)以及双酚 A二酐 (BPADA)缩聚得到多种新型热塑性线型聚酰亚胺。利用 Fourier转换红外光谱 (FTIR)、差示扫描量热法 (DSC)和热重分析 (TGA)等技术对这些新型聚酰亚胺的性能进行了研究 相似文献
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A thermal insulating layer and a buffer layer play a key role in the multilayer pyroelectric thin film infrared detector. In this work, a porous SiO 2 film serving as thermal insulating layer and a dense SiO 2 film serving as buffer layer were prepared by sol-gel method. The porosities of the porous film and the dense film are about 50% and 6%, respectively. Maximum thickness values of a single layer porous film and that of a single layer dense film all come up to 1.5 w m. Rms (root-mean-square) surface roughness of the porous film is about 40 nm and that of the dense film is about 1.5 nm. Experimental result shows 0.4 w m dense SiO 2 film can flatten rough surface of the porous SiO 2 film, and the rms surface roughness is less than 5 nm. The composite SiO 2 film can effectively block thermal diffusion. 相似文献
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A silver conductive thick film with a frit was examined for its potential applications in the plasma display panel industry. A low melting glass frit (firing temperature, less than 600 °C) was used in the conductive thick film for this work. The thermal behavior of the silver, frit and mixing powder was studied using hot stage microscopy. During the sintering of the silver conductive thick film with the frit, the frit melted, which was followed by accelerated densification. However, the increase in spreading rate with frit affected the microstructure, which has 1.9% porosity and the geometry of the silver conductive thick film. These results suggest that the content of the frit, firing temperature and the thermal properties of the frit in the silver conductive thick film influence the level of shrinkage, conductivity, and shape of the thick film. 相似文献
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铝在碱性胶体电解质中的阳极行为 总被引:2,自引:2,他引:0
用电化学测试法分别考察了"羧甲基纤维素钠(CMC) 4 mol/L KOH"和"聚丙烯酸(PAA) 4 mol/L KOH"胶体电解质对铝阳极的电化学性能影响.结果表明:铝在2.5%PAA胶体电解质中的电化学性能比在CMC胶体电解质中的好;在2.5%PAA胶体电解质中分别添加0.50 mmol/L Na2SnO3、0.05 mmol/L HgCl2和0.80 mmol/L K2MnO4,对铝的缓蚀、活化作用都有所改善.效果最好的是Na2SnO3,K2MnO4次之. 相似文献
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Nanosized lead titanate doped with calcium and lanthanum (PCLT) powder obtained by the sol-gel method was homogeneously mixed with vinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] to form nanocomposites. Several pyroelectric sensors were prepared on porous silicon dioxide, on poly(ethylene terephthalate) (PET) film and on bulk silicon substrates, respectively. The nanocomposite PCLT/P(VDF-TrFE) sensing film was deposited by spin-coating and Ni-Cr film was deposited as the top electrode and absorption layer. Experimental results showed that the substrate of the pyroelectric sensor could significantly affect the specific detectivity. The porous silicon dioxide and PET plastic film substrates could effectively decrease the thermal conductivity and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the specific detectivity. The results indicated that the specific detectivity of PCLT/P(VDF-TrFE) pyroelectric sensors based on porous silicon dioxide and PET plastic film substrates reached 4.2E6 and 3.4E7 cmHz 1/2 W m 1 respectively, which is about 1-2 orders of magnitude higher than that of the sensors formed under the same condition on the bulk silicon substrate. 相似文献
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