共查询到19条相似文献,搜索用时 281 毫秒
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从征 《激光与光电子学进展》1998,35(10):23-24
伯克利加州大学的研究人员用一种产生自协调波长的方法(在晶片之间或单一晶片内产生)已制成单片多波长垂直腔面发射激光器列阵。一个这样的列阵可提供光纤通信中波分复用所需的多个波长,现在对每一波长来说都需有单一封装的器件。可用于大批量生产的方法将驱使器件成本下降,使低成本波分复用成为可能。早在1991年初,ConnjeChans-Ha‘”“i”等人就推想。垂直腔面发射激光器对多波长列阵制作是种巨大的激光器结构,因为垂直胜面发射激光器仅在一个法布里一拍罗模式上共振,而输出波长可通过腔长改变。如果单片垂直腔面发射激光列阵能… 相似文献
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友清 《激光与光电子学进展》1998,35(2):23-26
光泵半导体(OPS)激光器是一类以特殊类型垂直腔面发射激光器(VCSEL)为基础的新型器件,与以电流注入驱动的垂直腔面发射激光器不同,光泵垂直腔面发射激光器是用二极管泵浦激光驱动的。这种器件具有所希望的性能特性组合,如小型组件的高功率和优良TEM00模特性的组合。这种技术还可做成具有特定波长输出的激光器或在850~1600nm光谱范围可调谐的激光器。这些特性意味着光泵半导体激光器具有渗透或影响许多商业化激光应用开发的潜力,其中包括在通讯方面的应用。这方面的一个重要例子是泵浦高功率掺饵光纤放大器(EDFA)。光泵光泵… 相似文献
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设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜(DBR)构成的垂直腔面发射激光器(VCSEL).采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm. 相似文献
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键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器 总被引:1,自引:0,他引:1
设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜(DBR)构成的垂直腔面发射激光器(VCSEL) . 采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm. 相似文献
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借助于SV232低温恒温器及LD2002C5 VCSEL测试系统,对内腔接触式氧化物限制型垂直腔面发射激光器进行了变温实验研究,测得在- 10℃~70℃温度范围内,器件输出光功率、电压、斜率效率、发射波长和阈值电流随温度变化的实验曲线,并结合不同温度下VCSEL反射谱和增益谱的模拟结果,对实验曲线进行了很好的分析和解释。估算了连续工作状态下研制的InGaAs/GaAs垂直腔面发射激光器内部温升值,而且还得到了现有工艺条件下满足最低室温工作阈值的谐振腔谐振波长与增益谱峰值波长。 相似文献
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新型材料InGaNAs的生长与应用前景 总被引:1,自引:0,他引:1
详细介绍了一种新型半导体材料(InGaNAs)的生长特点及其在制作高特征温度的长波长量子阱激光器、长波长垂直腔面发射激光器、长波长光泵垂直外腔面发射激光器、半导体可饱和吸收镜和长波长谐振腔增强探测器方面的优势。 相似文献
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垂直腔面发光激光器具有许多特点。这些特点是非常需要的,而且适合在光学互连、光学数据总线、光学和光学信号处理中应用。叙述了以GaAs为基础的垂直腔面发光激光器的基本器件结构和制造技术、讨论主要激光器性能特征、例如发射波长、光束图案、阈电流、输出功率、量子效率和调制响应。这些特征对激光器的潜在应用非常重要。还叙述了将激光器与n通道MESFET(金属—半导体场效应晶体管)驱动器单片集成化的最新成果。 相似文献
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利用传输矩阵法得到了垂直腔面发射激光器(VCSELs)内部光场应满足的本征方程,并通过打靶法对方程进行了求解。数值结果表明,该方法具有求解速度快和精度高的优点。用该方法模拟分析了有源区两侧GaAs垒层的厚度及spacer层中的Al组份对阈值增益、光限制因子和共振波长的影响。 相似文献
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Solution‐Processed Low Threshold Vertical Cavity Surface Emitting Lasers from All‐Inorganic Perovskite Nanocrystals
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Yue Wang Xiaoming Li Venkatram Nalla Haibo Zeng Handong Sun 《Advanced functional materials》2017,27(13)
Recently, newly engineered all‐inorganic cesium lead halide perovskite nanocrystals (IPNCs) (CsPbX3, X = Cl, Br, I) are discovered to possess superior optical gain properties appealing for solution‐processed cost‐effective lasers. Yet, the potential of such materials has not been exploited for practical laser devices, rendering the prospect as laser media elusive. Herein, the challenging but practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 IPNCs, featuring low threshold (9 µJ cm?2), directional output (beam divergence of ≈3.6°), and favorable stability, are realized for the first time. Notably, the lasing wavelength can be tuned across the red, green, and blue region maintaining comparable thresholds, which is promising in developing single‐source‐pumped full‐color visible lasers. It is fully demonstrated that the characteristics of the VCSELs can be versatilely engineered by independent adjustment of the cavity and solution‐processable nanocrystals. The results unambiguously reveal the feasibility of the emerging CsPbX3 IPNCs as practical laser media and represent a significant leap toward CsPbX3 IPNC‐based laser devices. 相似文献
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Kageyama T. Miyamoto T. Makino S. Ikenaga Y. Nishiyama N. Matsutani A. Koyama F. Iga K. 《Electronics letters》2001,37(4):225-226
The authors present a near 1200 nm wavelength vertical-cavity surface-emitting laser (VCSEL) the active region of which is formed by GaInNAs/GaAs quantum wells grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a high slope efficiency of 0.23 W/A, a high output power of over 1.0 mW, and a singlemode output power of 0.34 mW. The fabricated devices with different aperture sizes show low threshold currents of 1.2-2.1 mA and a record low threshold current density of 2.6 kA/cm2 in GaInNAs VCSELs 相似文献
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A. Yue K. Shen Renfan Wang Jing Shi 《Photonics Technology Letters, IEEE》2004,16(3):717-719
The structure of the conventional contact 1.3-/spl mu/m GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-/spl mu/m GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5/spl deg/C-85/spl deg/C , the 1.13-mA threshold current at 55/spl deg/C, and 1.52-mA threshold current at 85/spl deg/C are the best results for 1.3-/spl mu/m GaInNAs VCSELs. 相似文献
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In this paper, the long-term reliability of all monolithic 1.55-μm etched-mesa vertical cavity surface emitting lasers (VCSELs) with tunnel junction is investigated via high-temperature storage tests and accelerated life tests. Characteristic variations depend on the operating conditions are examined via the threshold current, the optical output power, and the dark current. The median device lifetime is extrapolated and the activation energy of the VCSELs is calculated based on the reliability testing results. In addition, the degradation mechanism of the tested VCSELs is analyzed using the correlation between the current-voltage characteristics (I-V) and the device lifetime. From these results, the long-term reliability of the VCSEL test structures for high-speed optical communication systems can be determined and the device parameters, such as dark current, can be used as a monitoring factor for estimating reliability of the VCSELs. 相似文献