Bistable amphoteric centers with reverse order of electron levels in semiconductors

The effect of bistability of amphoteric centers with negative correlation energy on the free-carrier concentration is studied. It is found that, in the absence of doping compensation, in a certain temperature range, the free-carrier concentration does not depend on the concentration of bistable amphoteric U ^? centers. The conductivity activation energy and the Fermi level position in the band gap of the semiconductor are determined not only by the electronic characteristics of the centers, such as the center ionization energy, but also by the parameters of transitions between the two equilibrium states of the center. The results of the simulation of the temperature dependence of the free-carrier concentration in a semiconductor with bistable amphoteric U ^? centers are presented for different levels of compensations. It is shown that the observed activation energy of the dark conductivity depends on the compensation degree.     

APD探测器的性能对激光雷达反演CO2浓度误差影响研究

星载积分路径差分吸收（IPDA）激光雷达是全天时全球范围内探测CO2浓度的一种有效的方法,而作为接收系统关键元件的光电探测器对激光雷达系统性能有着较大的影响。雪崩光电二极管（APD）有着较大的动态范围与高的响应度,因此它在星载激光雷达中广泛应用。介绍了IPDA激光雷达和APD探测器的工作原理,并根据实际工作条件,测试了一款APD探测单元的响应度、动态范围、不同光功率下的信噪比等主要性能参数,分析了这些性能参数对星载激光雷达CO2浓度的反演带来的影响。结果表明,在CO2浓度为400 ppm（1 ppm=10-6）,吸收波段信号的探测器输出电压在280~980 mV范围内时,APD探测器本身的非线性和噪声造成的误差小于0.8 ppm。     

红外光学气体检测中的参数修正函数浓度计算与补偿方法

从红外光谱吸收理论出发,提出了一种高精度的红外光学气体传感器气体浓度信号处理方法。重点阐述了气体浓度计算模型的建立和各参数的实验确定方法。从气体浓度计算的原理分析入手,通过逐步修正郎伯-比尔定律得到了一个有效的气体浓度函数关系式,供计算气体浓度用。为了减少外界温度对传感器检测结果的影响,实施了温度补偿,使得传感器能在不同温度条件下使用。经测试,传感器达到了10010-6的分辨能力,具有良好的稳定性,能够满足许多场合的使用。     

Specific features of the generation-recombination properties of bistable defects in semiconductors: Manifestation in Hoffmann’s function

Features of the temperature dependence of the concentration of majority free charge carriers in semiconductors on temperature-dependent discharging of bistable centers differing in electrical activity are treated theoretically. Specifically, two-level acceptors, two-level donors, and amphoteric centers are considered. The effects of the level of compensation and the ratio between the binding energies of one and two electrons at a center upon the discharging are studied. The results are represented as features of the behavior of Hoffmann’s function.     

Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

The electrical and photoluminescence properties of p-GaAs: Mn(100) layers grown by liquid-phase epitaxy from a bismuth solvent at various temperatures are investigated. It is shown that such layers have a low concentration of background impurities and a low degree of electrical compensation up to a hole concentration of p=1×10¹⁸ cm⁻³ at 295 K. As the concentration of manganese in the liquid phase increases, the concentration of donors in the GaAs: Mn layers increases superlinearly, while the concentration of ionized acceptors increases sublinearly. This leads to an increase in the compensation factor. The donor and acceptor concentrations, as well as the degree of compensation, increase more slowly with increasing temperature. Reasons for the donor compensation are discussed from a crystal-chemical point of view, and it is shown that the preassociation of manganese and arsenic atoms in the liquid phase could be responsible for generating these compensated donors. It is postulated that the compensating donors are nonradiative recombination centers, whose concentration increases with increasing doping level more rapidly than does the concentration of Mn_Ga acceptors. Fiz. Tekh. Poluprovodn. 32, 791–798 (July 1998)     

Peridynamic wetness approach for moisture concentration analysis in electronic packages

Within the finite element framework, a commonly accepted indirect approach employs the concept of normalized concentration to compute moisture concentration. It is referred to as “wetness” approach. If the saturated concentration value is not dependent on temperature or time, the wetness equation is analogous to the standard diffusion equation whose solution can be constructed by using any commercial finite element analysis software such as ANSYS. However, the time dependency of saturated concentration requires special treatment under temperature dependent environmental conditions such as reflow process. As a result, the wetness equation is not directly analogous to the standard diffusion equation. This study presents the peridynamic wetness modeling for time dependent saturated concentration for computation of moisture concentration in electronic packages. It is computationally efficient as well as easy to implement without any iterations in each time step. Numerical results concerning the one-dimensional analysis illustrate the accuracy of this approach. Moisture concentration calculation in a three-dimensional electronic package configuration with many different material layers demonstrates its robustness.     

Deep levels and electron transport in AlGaN/GaN heterostructures

Based on the measurements of current-voltage and capacitance-voltage characteristics and deep-level transient spectroscopy, comparison of the concentration of deep-level centers and conductivity of the channel of the AlGaN/GaN heterostructures grown by molecular beam epitaxy with the use of ammonia as the nitrogen source is carried out. Two types of defects with deep levels are revealed. One type is presumably associated with point defects localized near dislocations, and the other type is associated with the dislocations themselves. An increase in the concentration of the centers with deep levels correlates with an increase in the channel resistivity. The density of the deep-level centers can attain values of ～10¹³ cm^?2 and lead to compensation of the electron channel at the heterointerface.     

Bistable amphoteric centers in semiconductors

It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ^? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach.     

Reduction of the current gain of the n-p-n transistor component ofa thyristor due to the doping concentration of the p-base

The reduction of the current amplification factor of a wide-base transistor, with growing doping concentration in the base region, is investigated. A method for the determination of the minority-carrier lifetime τ_n in the base region and the emitter Gummel number G_e is developed. The method is based on transistor structures differing only in the base width. It was found that the lifetime τ_n decreases according to the power law τ_n~N^-0.45_A. This result is analyzed for different recombination processes. Good agreement is obtained if shallow impurities acting as recombination centers are assumed. The injection-limited current gain β_γ decreases significantly with an increase in the total number of the doping concentration of the base, reaches a broad maximum, and then falls slowly. The maximum value of G_e is found to be 1.1×10¹⁴ cm^-4-s in good agreement with theoretical results. Finally, the contribution of the injection efficiency γ and the transport factor α_T to the current gain α are determined. It is found that α is limited mainly by the injection efficiency γ     

Electric field and impurity concentration effects on the ionization energy of impurities. Application to acceptors in ZnTe

The ionization energies of donor and acceptor centers measured by thermal stimulation methods are systematically lower than the energies deduced from optical measurements. This result can be explained by the perturbations of the emission probability due to tunneling, Poole-Frenkel effect and coulombic interaction between impurities. The effect of the last two terms is calculated in realistic situations corresponding to DLTS or admittance spectroscopy experiments and compared with experimental results obtained for three impurities (Au, Cu, Ag) in ZnTe. After correction the thermal ionization energies are well identified with the optical ones if the deep acceptor concentration does not exceed too much that of the shallow ones.     

Numerical Study of Lumped Dispersion Compensation for 40-Gb/s Return-to-Zero Differential Phase-Shift Keying Transmission

Lumped dispersion compensation is numerically investigated for 40-Gb/s return-to-zero differential phase-shift-keying transmission. Using pseudorandom binary sequence lengths up to 2¹¹-1, simulation results indicate that better long-distance transmission performance can be achieved using lumped dispersion compensation than using conventional periodic inline dispersion compensation. Improved performance is found to be a result of reduced nonlinear effects and the elimination of periodic accumulation of nonlinear effects. The lumped compensation scheme provides a simple, flexible, and potentially low-cost solution for transmission link design     

激光雷达观测淮南大气SO2和NO2浓度廓线实例分析

为了初步探究淮南地区大气SO₂及NO₂的不同时空分布特征,采用自研的差分吸收激光雷达系统测得某地（淮南地区）部分月份大气SO₂及NO₂气体浓度分布廓线,并选取其中典型实例从气体水平浓度日变化、垂直浓度变化以及水平浓度月变化3个方面分析了SO₂及NO₂分布特点。结果表明,同一天夜晚时刻,SO₂及NO₂气体浓度大于下午时刻的气体浓度;SO₂及NO₂气体垂直浓度随高度增加呈递减趋势;SO₂及NO₂气体水平浓度月变化变现为冬季月份气体浓度最大,夏季月份气体浓度最小,春、秋季月份次之。SO₂及NO₂浓度变化特征是人群活动和气象条件变化共同作用的结果。     

A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

The results of processing the experimental drain-gate characteristics of test MOS transistors after irradiation with fast electrons and subsequent heat treatment are reported. It is shown that the concentration of trapping centers in the oxide is lowered as a result of radiation-thermal treatment.     

SLD光源温控模型中时间延迟特性研究

针对某陀螺厂家新引入的超辐射发光二极管(SLD)光源对微分控制环节依赖性显著的问题,对光源温控环节的传递函数和补偿控制进行了理论和试验分析。理论分析和试验结果表明,SLD管芯温度与TEC电流间的传递函数为时间滞后的二阶系统,该时间滞后源自热敏电阻的位置及其与管芯之间的距离;热敏电阻和管芯间距越大,管芯温度与TEC电流的时间滞后越大,微分环节的滞后补偿作用也就越显著;选择适当的微分参数,可使时间滞后相差较大的不同厂家光源同时获得良好的温控效果。上述结果不仅揭示了SLD光源温控环节时间滞后的来源,还对理解微分环节在SLD温控系统中的作用提供了客观依据。     

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25 eV, and its intensity increases with Al concentration. This deep-level is located at 0.55 eV above valence band maximum, implying a point defect such as a self-activated center, Al_ZnV_Zn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80 eV below conduction band minimum, with the electron capture cross-sections of 810⁻¹² and 1×10⁻⁷ cm², respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels.     

一种利用前馈电容改善瞬态响应的LDO

LDO具有高的纹波抑制和低噪声特点,在低输入输出压差以及RF领域应用广泛。在负载电流变化范围大的情况下,动态补偿成为必然选择。基于CSMC 0.5μm CMOS工艺,设计了一种利用MOS栅源电容实现动态补偿的LDO。采用反偏二极管模拟了寄生阱电容对系统稳定性的影响,并提出减小系统带宽、优化系统稳定性的方案。为了实现快速动态响应,设计前馈电容优化了系统。实验表明,设计的电路具有高PSRR和快速响应能力,适用于便携式设备供电。     

DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As

The Hall free carrier concentration of silicon-doped Al_0.3Ga_0.7As alloys is studied as a function of both temperature and illumination. Different thermal activation energies were observed for the DX center as a function of silicon concentration. Excitation of the samples using an infra-red source also provided data for better insight into the DX center population. We correlated the incremental free electron photo persistent population with the activation energies obtained from the temperature dependence of the measured Hall concentration. We concluded that large free carrier concentrations can yield perturbations in the lattice potential that may alter the configuration coordinate energy barriers for capture and emission of electrons by and from the DX centers.     

Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the AC lifetime profiling technique

The distribution of recombination centers induced in Si epi-substrates by helium (He) implantation is obtained for the first time by direct measurement of local recombination lifetime profile along the layer, using the ac differential lifetime profiling technique. The different energy levels of the recombination centers induced by He implantation at different doses and energies have been extracted, as a function of the position in the layer, by temperature scanning of the lifetime profiles. The lifetime measurements clearly demonstrate the presence of a secondary defect distribution that extend from the region of maximum primary damage both at lower and higher depths respect to the stopping range depth, due to the relatively large concentration of primary defects created near the stopping range, and give a coherent picture of the effects of He implant on the "local" lifetime.     

一种新型的光纤光栅可调整偏振模色散补偿器

文章提出一种基于磁场变化对均匀周期光纤光栅(FBG)引入线性啁啾的特性来实现可调整偏振模色散(PMD)补偿的技术。这种全光型PMD补偿技术在实现调整的同时能保持中心波长固定不变，而且能够灵活方便地实现不同的微分群时延量(DGD)。针对10Gbit／s非归fig(NRZ)传输系统，采用这种技术对进行PMD补偿的模拟计算结果表明，接收信号的眼图在补偿后得到了显著改善。     

Annealing of deep boron centers in silicon carbide

The effect of annealing on the efficiency of high-temperature luminescence of 6H-SiC samples grown under varied conditions and doped with boron was studied. A part of the samples was subjected to neutron or fast-electron irradiation. It is shown that the efficiency of high-temperature luminescence is determined by the concentration of deep boron-related centers, revealed by capacitance spectroscopy as D centers. High-temperature treatment leads to dissociation of the D centers, which are B_Si-V _C complexes, with part of the boron atoms becoming electrically inactive. It is established that deep boron centers are thermally stable up to ≈1500°C. The preservation of these centers at higher temperatures (up to 2600°C) is due to the presence in SiC crystals of clusters acting as sources of nonequilibrium carbon vacancies. Clusters of this kind are contained in crystals grown with an excess of silicon or irradiated with high-energy particles. This circumstance accounts for the strong dependence of both the concentration of D centers and the temperature of their annealing on sample preparation conditions.